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CN-117970571-B - SOA-PIN with narrow wavelength interval and manufacturing method thereof

CN117970571BCN 117970571 BCN117970571 BCN 117970571BCN-117970571-B

Abstract

The invention relates to the technical field of optical communication, in particular to an SOA-PIN with a narrow wavelength interval and a manufacturing method thereof, wherein the manufacturing method comprises the steps of dividing an optical path into a front optical path and a rear optical path by taking an SOA chip as a boundary; the front optical path is established firstly and then the rear optical path is established when the SOA-PIN is coupled, the front optical path is established through the reverse bias characteristic of the SOA chip, the front optical path comprises a first collimating lens, an isolator, a second collimating lens and an optical port which are sequentially arranged, the rear optical path is established through the forward bias characteristic of the SOA chip, and the rear optical path comprises a third collimating lens, a filter disc, a fourth collimating lens and a PIN chip which are sequentially arranged. The invention can meet the requirements of higher and denser yield and signal wavelength.

Inventors

  • MEI XUE
  • LIU CHENGGANG

Assignees

  • 武汉光迅科技股份有限公司

Dates

Publication Date
20260512
Application Date
20240221

Claims (10)

  1. 1. A method for manufacturing a narrow wavelength-spaced SOA-PIN, comprising: dividing an optical path into a front optical path (1) and a rear optical path (2) by taking an SOA chip (106) as a boundary, and firstly establishing the front optical path (1) and then establishing the rear optical path (2) when the SOA-PIN is coupled; The front optical path (1) is established through the reverse bias characteristic of the SOA chip (106), and the front optical path (1) comprises a first collimating lens (105), an isolator (104), a second collimating lens (103) and an optical port (101) which are sequentially arranged; The rear light path (2) is established through the forward bias characteristic of the SOA chip (106), and the rear light path (2) comprises a third collimating lens (107), a filter disc (108), a fourth collimating lens (109) and a PIN chip (110) which are sequentially arranged.
  2. 2. The method for manufacturing the SOA-PIN with the narrow wavelength interval according to claim 1, wherein the dividing the optical path into the front optical path (1) and the rear optical path (2) by using the SOA chip (106) as a boundary specifically comprises: the SOA chip (106) and the PIN chip (110) are mounted to a preset position and subjected to gold wire bonding, the part from the SOA chip (106) to the optical port (101) is divided into the front optical path (1), and the part from the SOA chip (106) to the PIN chip (110) is divided into the rear optical path (2).
  3. 3. The method for manufacturing the SOA-PIN with the narrow wavelength interval according to claim 1, wherein the step of establishing the front optical path (1) by the reverse bias characteristic of the SOA chip (106) specifically includes: -assembling the isolator (104) and the second collimating lens (103) between the SOA chip (106) and the optical port (101), wherein the isolator (104) is on the side close to the SOA chip (106) and the second collimating lens (103) is on the side close to the optical port (101); Adding a first path of signal light (201) and a second path of signal light (202) to the optical port (101), reversely biasing the SOA chip (106) and coupling the optical port (101), wherein the SOA chip (106) has response current output with microampere level at the moment, and coupling the first path of signal light (201) and the second path of signal light (202) to the maximum, and welding and solidifying the optical port (101); and continuing the input of the first path of signal light (201) and the second path of signal light (202), keeping the reverse bias of the SOA chip (106), coupling and solidifying the first collimating lens (105) between the SOA chip (106) and the isolator (104), and finishing the establishment of the front optical path (1).
  4. 4. A method of fabricating a narrow wavelength interval SOA-PIN according to claim 3, wherein said establishing said rear optical path (2) by forward bias characteristics of said SOA chip (106) specifically comprises: changing the SOA chip (106) into forward bias, continuously inputting the first path of signal light (201) and the second path of signal light (202), and pre-aligning the filter disc (108); pre-coupling the third collimating lens (107) between the SOA chip (106) and the filter disc (108), pre-coupling the fourth collimating lens (109) between the filter disc (108) and the PIN chip (110) until the PIN chip (110) has a response current of microampere level, and adjusting the response currents of the first path of signal light (201) and the second path of signal light (202) to be maximum; Dispensing, curing the filter sheet (108); The third collimating lens (107) and the fourth collimating lens (109) are coupled until the response currents of the first path of signal light (201) and the second path of signal light (202) to the PIN chip (110) meet the requirements, dispensing is performed, the third collimating lens (107) and the fourth collimating lens (109) are solidified, and the rear light path (2) is built.
  5. 5. The method for manufacturing a narrow wavelength interval SOA-PIN according to any one of claims 1-4, wherein the PIN chip (110) is one of a flat patch or a vertical patch.
  6. 6. The narrow wavelength interval SOA-PIN is manufactured by the narrow wavelength interval SOA-PIN manufacturing method according to any one of claims 1-5, and is characterized by comprising a front optical path (1) and a rear optical path (2), wherein the front optical path (1) and the rear optical path (2) are divided by taking an SOA chip (106) as a boundary.
  7. 7. The narrow wavelength interval SOA-PIN according to claim 6, characterized in that the front optical path (1) comprises a first collimating lens (105), an isolator (104), a second collimating lens (103) and an optical port (101) arranged in this order, wherein the first collimating lens (105) is located on a side close to the SOA chip (106), the optical port (101) is located on a side away from the SOA chip (106), the isolator (104) and the second collimating lens (103) are arranged between the first collimating lens (105) and the optical port (101), and the isolator (104) is located close to the SOA chip (106), and the second collimating lens (103) is located close to the optical port (101).
  8. 8. The narrow wavelength interval SOA-PIN according to claim 7, characterized in that the outer circumference of the optical port (101) housing is provided with an adjusting ring (102), by means of which adjusting ring (102) the optical port (101) housing is fixed with the second collimator lens (103) housing.
  9. 9. The narrow wavelength interval SOA-PIN according to claim 6, characterized in that the rear optical path (2) comprises a third collimating lens (107), a filter disc (108), a fourth collimating lens (109) and a PIN chip (110) arranged in this order, wherein the third collimating lens (107) is located on the side close to the SOA chip (106) and the PIN chip (110) is located on the side remote from the SOA chip (106), the filter disc (108) and the fourth collimating lens (109) are arranged between the third collimating lens (107) and the PIN chip (110), and the filter disc (108) is located close to the third collimating lens (107) and the fourth collimating lens (109) is located close to the PIN chip (110).
  10. 10. The SOA-PIN with narrow wavelength intervals according to claim 9, characterized in that the cross section of the fourth collimating lens (109) is trapezoid, the first right angle surface of the fourth collimating lens (109) faces the filter (108), the second right angle surface of the fourth collimating lens (109) faces the PIN chip (110), and the optical path from the filter (108) to the fourth collimating lens (109) is reflected on the inclined surface of the fourth collimating lens (109) after passing through the first right angle surface and then passes through the second right angle surface and is directed to the PIN chip (110).

Description

SOA-PIN with narrow wavelength interval and manufacturing method thereof Technical Field The invention relates to the technical field of optical communication devices, in particular to an SOA-PIN with narrow wavelength intervals and a manufacturing method thereof. Background In the coupling process of the traditional SOA-PIN, the reverse bias characteristic of a semiconductor optical amplifier (Semi-conductor Optical Amplifier, abbreviated as SOA) chip is not utilized, but only the forward bias characteristic of the SOA is utilized, a post-optical path is established firstly, and then a front optical path is established. The SOA must operate in forward bias to amplify, but at the same time the SOA itself emits a large broad spectrum noise light in forward bias. When only the forward bias characteristic of the SOA is utilized, only the post-light path can be established first, and then the pre-light path can be established. The traditional manufacturing method utilizes noise light emitted by an SOA during forward bias to couple the noise light into a PIN chip (PD chip) and then decouples a front light path. In the process of establishing the post-light path, the mounting angle of the filter disc is strongly related to the wavelength of the light passing through. Because the light emitted by the SOA is wide-spectrum noise, when the accuracy of the chip mounter is insufficient, the angle of the filter disc is askew, the wavelength of the light passing through the filter disc drifts, the light enters the PIN chip, the PIN chip responds to all wavelengths, and the PIN chip cannot distinguish whether the wavelength passing through the filter disc is correct or not. Therefore, after the establishment of the rear light path is completed, the front light path is established again, when the correct signal wavelength is input from the front light path, the signal wavelength is found to be completely or partially filtered by the filter disc which is incorrectly attached at an angle, and the filter disc can only be reworked and reworked, and the method has components of collision and transportation and has low yield. In the case of a wide signal wavelength interval of several SOA-PINs, if the filter filters out only a part of the signal wavelength, the amplification effect of the signal is affected, and the filter can also be used. If the filter filters out all the signal wavelengths, the SOA-PIN is completely unusable. In view of this, how to overcome the defects of the prior art, how to meet the requirements of higher and denser yield and signal wavelength is a problem to be solved in the technical field. Disclosure of Invention In order to solve the technical problems, the invention provides an SOA-PIN with a narrow wavelength interval and a manufacturing method thereof, which are used for meeting the requirements of higher and denser yield and signal wavelength. The invention is realized in the following way: in a first aspect, the present invention provides a method for manufacturing an SOA-PIN with a narrow wavelength interval, including: Dividing an optical path into a front optical path and a rear optical path by taking an SOA chip as a boundary, and firstly establishing the front optical path and then establishing the rear optical path when the SOA-PIN is coupled; The front light path is established through the reverse bias characteristic of the SOA chip and comprises a first collimating lens, an isolator, a second collimating lens and an optical port which are sequentially arranged; the rear light path is established through the forward bias characteristic of the SOA chip and comprises a third collimating lens, a filter disc, a fourth collimating lens and a PIN chip which are sequentially arranged. In a preferred embodiment, the separating the optical path into the front optical path and the rear optical path by using the SOA chip as a boundary specifically includes: The SOA chip and the PIN chip are attached to a preset position and subjected to gold wire bonding, the part from the SOA chip to the optical port is divided into the front optical path, and the part from the SOA chip to the PIN chip is divided into the rear optical path. In a preferred embodiment, the establishing the front optical path by the reverse bias characteristic of the SOA chip specifically includes: the isolator and the second collimating lens are assembled between the SOA chip and the optical port, wherein the isolator is arranged on one side close to the SOA chip, and the second collimating lens is arranged on one side close to the optical port; Reversely biasing the SOA chip to couple the optical port, wherein the SOA chip has microampere-level response current output, and the first path of signal light and the second path of signal light are coupled to the maximum, so that the optical port is welded and solidified; And continuing the input of the first path of signal light and the second path of signal light, keeping the reverse bia