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CN-118064859-B - Thermochromic multiband compatible infrared stealth film and preparation method and application thereof

CN118064859BCN 118064859 BCN118064859 BCN 118064859BCN-118064859-B

Abstract

The invention relates to a thermochromic multiband compatible infrared stealth film and a preparation method and application thereof, and belongs to the technical field of infrared stealth films. The invention provides a thermochromic multiband compatible infrared stealth film, which is composed of a ZnS material layer, a VO 2 material layer, a Si material layer and an Ag substrate layer from top to bottom in sequence. The infrared stealth film has the characteristic that the infrared emissivity is reduced along with the temperature rise, can be self-adaptively and reversibly adjusted according to the change of the ambient temperature, has the stealth function of double infrared bands of 3-5 mu m and 8-14 mu m, has higher emissivity in the band of 5-8 mu m of a non-infrared detection band, and can realize the heat dissipation function of a stealth target in the band. The infrared stealth film has the characteristics of simple structure and convenient preparation method, can be covered on the surface of a target in a large area, and is beneficial to large-scale popularization.

Inventors

  • LI YARU
  • WANG FUQIANG
  • ZHANG AOYU
  • FU ZHICHANG
  • WANG WEI

Assignees

  • 鄂尔多斯应用技术学院
  • 哈尔滨工业大学（威海）

Dates

Publication Date
20260508
Application Date
20240301

Claims (6)

  1. 1. The thermochromic multiband compatible infrared stealth film is characterized by sequentially comprising a ZnS material layer, a VO 2 material layer, a Si material layer and an Ag substrate layer from top to bottom, wherein the thickness of the ZnS material layer is 300, 400, 500 or 600nm, the thickness of the VO 2 material layer is 100-250 nm, the thickness of the Si material layer is not less than 1000nm, and the thickness of the Ag substrate layer is not less than 200nm.
  2. 2. The method for preparing the thermochromic multiband compatible infrared stealth film according to claim 1, wherein the method is characterized in that a magnetron sputtering technology is adopted to sequentially deposit on a stainless steel substrate, high-purity argon is used as sputtering gas, sputtering processes are all carried out in a rotary sample table, an Ag metal target is adopted to prepare an Ag substrate layer by using direct current power sputtering under an argon atmosphere, and a Si material layer, a VO 2 material layer and a ZnS material layer are respectively prepared by using a Si target, a VO 2 target and a ZnS target by using radio frequency power sputtering under the argon atmosphere.
  3. 3. The method for preparing the thermochromic multiband compatible infrared stealth film according to claim 2, wherein the pre-sputtering is performed for 3 minutes before the formal sputter deposition is started.
  4. 4. A method for producing a thermochromic multi-band compatible infrared stealth film according to claim 2 or 3, wherein the rotational speed of the rotary sample stage is 5 rpm.
  5. 5. The method for preparing the thermochromic multiband compatible infrared stealth film according to claim 4, wherein when the Ag substrate layer is prepared by sputtering, a sample is placed in a cavity, vacuum is extracted, 50sccm argon is introduced after the initial pressure of the cavity is 8×10 -4 Pa, the pressure is controlled to be 0.5 sccm Pa, sputtering is started after the pressure is stable, the sputtering power of a direct current power supply is 20-100W, and the sputtering time is 10-60 minutes.
  6. 6. The method for preparing the thermochromic multiband compatible infrared stealth film according to claim 5, wherein when the Si material layer, the VO 2 material layer and the ZnS material layer are prepared by sputtering, a sample of which the Ag substrate layer is finished is placed into a cavity, vacuum is extracted, argon with the flow rate of 50sccm is introduced after the initial pressure of the cavity is 8 multiplied by 10 -4 Pa, the pressure is controlled to be 0.5 Pa, sputtering is started after the pressure is stabilized, the sputtering power of a radio frequency power supply is 100-300W, the sputtering time is 20-60 minutes, and the sputtering deposition of the Si material layer, the VO 2 material layer and the ZnS material layer is sequentially finished.

Description

Thermochromic multiband compatible infrared stealth film and preparation method and application thereof Technical Field The invention belongs to the technical field of infrared stealth films, and particularly relates to a thermochromic multiband compatible infrared stealth film, and a preparation method and application thereof. Background With the rapid development of infrared detector technology, infrared detection means tend to be high-precision and diversified, and new and higher requirements are put forward on infrared stealth technology. According to the current development state of the infrared stealth technology, the development trend can be summarized into two aspects, namely, the compatibility of the stealth technology of each wave band is sought, and the existing stealth method is improved. The invention patent with the publication number of CN113534315A discloses an infrared stealth super structure compatible with thermal-induced emissivity and frequency selective heat dissipation, which mainly comprises a plurality of electromagnetic resonance units which are arranged on a substrate in a periodic manner, wherein each electromagnetic resonance unit respectively comprises an emissivity regulating layer, a dielectric layer and a plurality of metal columns which are arranged on the dielectric layer in a periodic manner, the emissivity regulating layer is prepared by embedding phase change materials into the metal layers which are arranged on the substrate in a stacked manner. According to the characteristics of the infrared stealth super-structure material, the infrared stealth super-structure material can realize the modulation of emissivity in an atmospheric transmission window of 3-5 mu m and 8-14 mu m, and simultaneously enhance the heat radiation of an atmospheric absorption wave band of 5-8 mu m to realize the effect of active heat radiation, but has certain defects that (1) the structure of the material is complex, parameters such as the diameter or side length, the height and the spacing of a metal column are required to be strictly controlled in the process of regulating the emissivity and selecting the heat emission by frequency, the regulating process is complex, the regulating requirement is high, and the regulation is inconvenient, and (2) the metal column in the structure is made of noble metal, so that the increase of manufacturing cost in the actual production and utilization process is caused, the large-scale popularization and use are not facilitated, and (3) the problems of complex steps, high cost, long consumption and the like generally exist in reality in the 3D super-material structure manufacturing process, the material is difficult to conform to a curved surface, and the application condition under the actual complex condition is difficult to be satisfied. Based on this, there is a need in the art for infrared stealth materials that are simple in preparation process, low in cost, suitable for more application scenarios, and capable of achieving multiband compatible properties and good heat dissipation properties. Disclosure of Invention The invention provides a thermochromic multiband compatible infrared stealth film, a preparation method and application thereof, and aims to solve the problems of complex preparation process, high cost and narrow application range of the existing infrared stealth material. The technical scheme of the invention is as follows: The thermochromic multiband compatible infrared stealth film sequentially comprises a ZnS material layer, a VO 2 material layer, a Si material layer and an Ag substrate layer from top to bottom, wherein the thickness of the ZnS material layer is 300-600 nm, the thickness of the VO 2 material layer is 100-250 nm, the thickness of the Si material layer is not less than 1000nm, and the thickness of the Ag substrate layer is not less than 200nm. Further, the thickness of the ZnS material layer is 300nm. Further, the thickness of the ZnS material layer is 600nm. A preparation method of a thermochromic multiband compatible infrared stealth film sequentially deposits on a stainless steel substrate by adopting a magnetron sputtering technology, high-purity argon is used as sputtering gas, sputtering processes are carried out in a rotary sample table, an Ag metal target is adopted to prepare an Ag substrate layer by using direct current power supply sputtering under an argon atmosphere, and a Si material layer, a VO 2 material layer and a ZnS material layer are respectively prepared by using a Si target, a VO 2 target and a ZnS target by using radio frequency power supply sputtering under the argon atmosphere. Further, pre-sputtering was performed for 3 minutes before the actual start of sputter deposition. Further, the rotating speed of the rotating sample table is 5 revolutions per minute. Further, when the Ag substrate layer is prepared by sputtering, a sample is placed in a cavity, vacuum is extracted, argon with the flow rate