CN-118588695-B - Manufacturing method of power module and power module

CN118588695BCN 118588695 BCN118588695 BCN 118588695BCN-118588695-B

Abstract

The application discloses a manufacturing method of a power module and the power module. The manufacturing method comprises the steps of providing a first substrate, wherein the first substrate comprises three first metal layers which are arranged in an electrical isolation mode, arranging an upper bridge chip set on the first metal layers, conducting the upper bridge chips in the upper bridge chip set and the first metal layers, providing a second substrate, wherein the second substrate comprises three second metal layers which are arranged in an electrical isolation mode, arranging a lower bridge chip set on the second metal layers, conducting the lower bridge chips in the lower bridge chip set and the second metal layers, connecting the upper bridge chips and the second metal layers through first conductive buffer pieces, and connecting the lower bridge chips and the first metal layers through second conductive buffer pieces. The application integrates three half-bridge structures into a whole, adopts double-sided packaging, utilizes the conductive buffer block to conduct flow between the chip and the metal layer, shortens the flow guiding distance, reduces stray inductance, improves heat dissipation, and can manufacture the power module with simple process, small volume, compact structure and high reliability.

Inventors

LING HEPING
PAN HUA
LIU HAIJUN
QIN SITAO
WU YUNFENG

Assignees

比亚迪股份有限公司

Dates

Publication Date: 20260505
Application Date: 20230303

Claims (11)

1. A method of manufacturing a power module, the method comprising the steps of: providing a first substrate, wherein the first substrate comprises three first metal layers which are arranged in an electrically isolated manner; An upper bridge chip set is arranged on each first metal layer of the first substrate, and upper bridge chips in the upper bridge chip set are communicated with the first metal layers; providing a second substrate, wherein the second substrate comprises three second metal layers which are arranged in an electrically isolated manner; a lower bridge chip set is arranged on each second metal layer of the second substrate, and lower bridge chips in the lower bridge chip set are communicated with the second metal layers; connecting the upper bridge chip and the second metal layer by using a first conductive buffer member, and connecting the lower bridge chip and the first metal layer by using a second conductive buffer member; after the upper bridge chip set is arranged, the manufacturing method further comprises the steps of conducting the source electrode and/or the grid electrode of the upper bridge chip and the first metal layer conducted with the source electrode and/or the grid electrode of the upper bridge chip through wire bonding; After the lower bridge chip set is arranged, the manufacturing method further comprises the step of conducting the source electrode and/or the grid electrode of the lower bridge chip and the second metal layer conducted with the source electrode and/or the grid electrode of the lower bridge chip through wire bonding.
2. The method of claim 1, wherein the drain of the upper bridge chip is electrically connected to the first metal layer and the drain of the lower bridge chip is electrically connected to the second metal layer.
3. The method of manufacturing a power module according to claim 1, wherein the first substrate further includes a third metal layer on a side of the first substrate opposite the first metal layer, the second substrate further includes a fourth metal layer on a side of the second substrate opposite the second metal layer, the method of manufacturing further comprising: A first heat dissipation bottom plate is arranged on the third metal layer; And a second heat dissipation bottom plate is arranged on the fourth metal layer.
4. A method of manufacturing a power module according to any one of claims 1-3, characterized in that the method of manufacturing further comprises: a first lead frame is arranged on the first metal layer, and the first lead frame comprises a high-voltage direct-current terminal and a first control terminal; And a second lead frame is arranged on the second metal layer, and comprises a high-voltage alternating-current terminal and a second control terminal, wherein the position of the second lead frame is opposite to that of the first lead frame.
5. The method of manufacturing a power module according to claim 4, wherein the high voltage DC terminal is electrically connected to the first metal layer, and the high voltage AC terminal is electrically connected to the second metal layer.
6. The method of manufacturing a power module according to claim 5, wherein the high-voltage direct-current terminal includes a positive electrode terminal and a negative electrode terminal, and the positive electrode terminal and the negative electrode terminal are stacked.
7. The method of manufacturing a power module according to claim 6, wherein, The positive electrode terminal includes a first terminal portion and a second terminal portion connected to each other, the negative electrode terminal is disposed between the first terminal portion and the second terminal portion, or The negative terminal includes a first terminal portion and a second terminal portion connected to each other, and the positive terminal is disposed between the first terminal portion and the second terminal portion.
8. The method of manufacturing a power module according to claim 1, wherein the upper bridge chip and the lower bridge chip are arranged in a staggered manner such that a projection of the upper bridge chip onto the first metal layer does not overlap with a projection of the lower bridge chip onto the first metal layer.
9. The method of manufacturing a power module according to claim 3, further comprising injection molding the assembled first and second substrates to form a molded case.
10. The method of claim 9, further comprising providing a liquid cooling assembly outside the first heat sink base plate and the second heat sink base plate such that the first heat sink base plate and the second heat sink base plate can be positioned in a liquid flow path of the liquid cooling assembly.
11. A power module, characterized in that it is manufactured by the manufacturing method according to any one of claims 1-10.

Description

Manufacturing method of power module and power module Technical Field The present application relates to the field of electronic devices, and in particular, to a method for manufacturing a power module and a power module. Background In the existing manufacturing method of the power module, a chip is often arranged on a substrate to form a bridge arm, and if the full bridge function is to be realized, a plurality of power modules need to be assembled. This results in a complex process, and the product is not compact enough in structure and occupies a large space in the application. Disclosure of Invention In the summary, a series of concepts in a simplified form are introduced, which will be further described in detail in the detailed description. The summary of the application is not intended to define the key features and essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter. To at least partially solve the above-mentioned problems, according to a first aspect of the present application, there is provided a manufacturing method of a power module, the manufacturing method comprising the steps of: providing a first substrate, wherein the first substrate comprises three first metal layers which are arranged in an electrically isolated manner; setting an upper bridge chip set on the first metal layer of the first substrate, and conducting upper bridge chips in the upper bridge chip set with the first metal layer; providing a second substrate, wherein the second substrate comprises three second metal layers which are arranged in an electrically isolated manner; Setting a lower bridge chip set on the second metal layer of the second substrate, and conducting lower bridge chips in the lower bridge chip set with the second metal layer; and connecting the upper bridge chip with the second metal layer by using a first conductive buffer member, and connecting the lower bridge chip with the first metal layer by using a second conductive buffer member. The manufacturing method of the power module integrates 3 upper bridge arms and 3 lower bridge arms, or integrates three half bridge structures, adopts double-sided encapsulation, welds conductive buffer blocks between the chip and the metal layer for diversion, utilizes the conductive buffer blocks for diversion between the chip and the metal layer to replace the form of chip wire bonding in the traditional scheme, shortens the diversion distance, reduces stray inductance, improves heat dissipation, and can manufacture the six-in-one power module product with simple manufacturing process, small volume, compact structure and high reliability. Optionally, the drain electrode of the upper bridge chip is electrically connected with the first metal layer, and the drain electrode of the lower bridge chip is electrically connected with the second metal layer. Optionally, after the upper bridge chip set is arranged, the manufacturing method further comprises conducting a source electrode and/or a gate electrode of the upper bridge chip with the first metal layer through wire bonding; After the lower bridge chip set is arranged, the manufacturing method further comprises the step of conducting the source electrode and/or the grid electrode of the lower bridge chip with the second metal layer through wire bonding. Optionally, the first substrate further includes a third metal layer, the third metal layer being located on a side of the first substrate opposite to the first metal layer, the second substrate further includes a fourth metal layer, the fourth metal layer being located on a side of the second substrate opposite to the second metal layer, the manufacturing method further includes: A first heat dissipation bottom plate is arranged on the third metal layer; And a second heat dissipation bottom plate is arranged on the fourth metal layer. Optionally, the manufacturing method further comprises: a first lead frame is arranged on the first metal layer, and the first lead frame comprises a high-voltage direct-current terminal and a first control terminal; And a second lead frame is arranged on the second metal layer, and comprises a high-voltage alternating-current terminal and a second control terminal, wherein the position of the second lead frame is opposite to that of the first lead frame. Alternatively, the process may be carried out in a single-stage, The high-voltage direct-current terminal is electrically conducted with the first metal layer; The high voltage ac terminal is in electrical communication with the second metal layer. Optionally, the high voltage direct current terminal includes a positive terminal and a negative terminal, and the positive terminal and the negative terminal are stacked. Alternatively, the process may be carried out in a single-stage, The positive electrode terminal includes a first terminal portion and a second terminal portion connected to each other