CN-118899194-B - Temperature control thermal switching device based on charge density wave transition

CN118899194BCN 118899194 BCN118899194 BCN 118899194BCN-118899194-B

Abstract

A temperature-controlled thermal switching device based on charge density wave transitions. The invention aims to solve the technical problem that the existing temperature control thermal switching device based on the thermal lattice phase change characteristic is limited by a main factor and cannot support heat flow to realize electrodeless regulation in a wider temperature range. The temperature control thermal switch device specifically comprises a receiving end composite structure, a transmitting end composite structure and a shell body (5), wherein the lower surfaces of the two ends of the transmitting end composite structure are attached to a first connecting surface (5-1) of the shell body (5), the upper surfaces of the two ends of the receiving end composite structure are attached to a second connecting surface (5-2) of the shell body (5), and the transmitting end composite structure, the receiving end composite structure and the shell body (5) form a closed cavity structure. The present invention is in the field of thermal regulators.

Inventors

ZHOU CHENGLONG
JIA XINYU
LUO XIAOPING
ZHANG YONG
YI HONGLIANG

Assignees

哈尔滨工业大学

Dates

Publication Date: 20260505
Application Date: 20240704

Claims (5)

1. A temperature control thermal switch device based on charge density wave transition comprises a receiving end composite structure, a transmitting end composite structure and a shell body (5), wherein the lower surfaces of two ends of the transmitting end composite structure are attached to a first connecting surface (5-1) of the shell body (5), the upper surfaces of two ends of the receiving end composite structure are attached to a second connecting surface (5-2) of the shell body (5), and the transmitting end composite structure, the receiving end composite structure and the shell body (5) form a closed cavity structure; The device is characterized by comprising a receiving end heat conduction gasket (1), a receiving end substrate (2), a receiving end objective table (3) and a receiving end charge density wave coating (4), wherein the receiving end charge density wave coating (4), the receiving end objective table (3), the receiving end substrate (2) and the receiving end heat conduction gasket (1) are sequentially overlapped from top to bottom, and the receiving end objective table (3) and the receiving end charge density wave coating (4) are positioned in the closed cavity structure; The transmitting end composite structure specifically comprises a transmitting end heat conduction pad (6), a transmitting end substrate (7), a transmitting end objective table (8) and a transmitting end charge density wave coating layer (9), wherein the transmitting end heat conduction pad (6), the transmitting end substrate (7), the transmitting end objective table (8) and the transmitting end charge density wave coating layer (9) are sequentially overlapped from top to bottom, and the transmitting end objective table (8) and the transmitting end charge density wave coating layer (9) are positioned in the closed cavity structure; the receiving end charge density wave plating layer (4) is deposited on the first bonding surface (10) of the receiving end objective table (3) by a molecular beam epitaxy method; The transmitting end charge density wave plating layer (9) is deposited on the second bonding surface (12) of the transmitting end objective table (8) through a molecular beam epitaxy method; The transmitting end charge density wave coating (9) and the receiving end charge density wave coating (4) are made of two-dimensional TiSe2 films, and the single-layer thicknesses of the transmitting end charge density wave coating (9) and the receiving end charge density wave coating (4) are 0.5-5 nm.
2. A temperature-controlled thermal switching device based on charge density wave transitions according to claim 1, characterized in that the emitter stage (8) is formed by lithography on the emitter substrate (7) and the thickness of the emitter stage is 500 nm.
3. The temperature-controlled thermal switching device based on charge density wave transition according to claim 1, wherein the shell body (5) is attached to the epitaxial connection surface (11) of the emission end substrate (7) by a magnetron sputtering technology, and the shell body (5) is made of a Cu4TiSe4 crystal material.
4. The device of claim 1, wherein the emitter substrate (7), the emitter stage (8), the receiver stage (3) and the receiver substrate (2) are made of low doped silicon wafers with doping concentrations less than 10 17 cm -3 .
5. The temperature-controlled thermal switching device based on charge density wave transition according to claim 1, wherein the vertical spacing of the case body (5) is 1010 nm-1100 nm.

Description

Temperature control thermal switching device based on charge density wave transition Technical Field The invention relates to a temperature control thermal switching device, and belongs to the technical field of thermal regulators. Background With the development of spacecraft technology, the trend of orbital maneuver, multiple working modes and microminiaturization of the spacecraft is increasingly obvious. These variations place greater demands on the thermal control system of the spacecraft. When a spacecraft is operated in space, it may experience extreme temperature environments such as high temperatures in direct sunlight and low temperatures in earth shadows. Therefore, the appearance and development of temperature control thermal switch technology plays an important role in solving the difficult problem of spacecraft thermal control design requiring frequent maneuvering or severe external environment change. The current temperature control thermal switch mainly realizes automatic on or off of heat flow by applying the thermal phase change characteristics of vanadium dioxide and GST materials to radiation heat exchange. However, the phase transition temperature range is narrow (the thermal lattice phase transition is changed into the first-order phase transition), so that the electrodeless regulation and control of the heat flow in a wider temperature range cannot be supported. Therefore, there is a need for a temperature-controlled thermal switching device based on charge density wave transition that can achieve stepless regulation in a wide temperature range. Disclosure of Invention The invention provides a temperature control thermal switching device based on charge density wave transition, which aims to solve the problem that the temperature control thermal switching device based on thermal lattice phase change characteristics cannot support heat flow to realize electrodeless regulation and control in a wider temperature range. The invention adopts the technical scheme that the shell comprises a receiving end composite structure, a transmitting end composite structure and a shell body 5, wherein the lower surfaces of two ends of the transmitting end composite structure are attached to a first connecting surface 5-1 of the shell body 5, the upper surfaces of two ends of the receiving end composite structure are attached to a second connecting surface 5-2 of the shell body 5, and the transmitting end composite structure, the receiving end composite structure and the shell body 5 form a closed cavity structure. Further, the receiving end composite structure comprises a receiving end heat conducting gasket 1, a receiving end substrate 2, a receiving end object stage 3 and a receiving end charge density wave coating 4, wherein the receiving end charge density wave coating 4, the receiving end object stage 3, the receiving end substrate 2 and the receiving end heat conducting gasket 1 are sequentially overlapped from top to bottom, and the receiving end object stage 3 and the receiving end charge density wave coating 4 are positioned in the closed cavity structure. Further, the transmitting end composite structure specifically comprises a transmitting end heat conduction pad 6, a transmitting end substrate 7, a transmitting end objective table 8 and a transmitting end charge density wave coating 9, wherein the transmitting end heat conduction pad 6, the transmitting end substrate 7, the transmitting end objective table 8 and the transmitting end charge density wave coating 9 are sequentially overlapped from top to bottom, and the transmitting end objective table 8 and the transmitting end charge density wave coating 9 are located in the closed cavity structure. Further, the receiving-end charge density wave plating layer 4 is deposited on the first bonding surface 10 of the receiving-end stage 3 by a molecular beam epitaxy method. Further, the emitter charge density wave plating layer 9 is deposited on the second bonding surface 12 of the emitter stage 8 by a molecular beam epitaxy method. Furthermore, the transmitting end charge density wave coating 9 and the receiving end charge density wave coating 4 are both made of two-dimensional TiSe2 films, and the single-layer thicknesses of the transmitting end charge density wave coating 9 and the receiving end charge density wave coating 4 are both 0.5-5 nm. Further, the emitter stage 8 is formed by etching on the emitter substrate 7 by photolithography, and the thickness of the emitter stage is 500 nm a. Further, the shell body 5 is attached to the epitaxial connection surface 11 of the emission end substrate 7 by a magnetron sputtering technology, and the shell body 5 is made of a Cu4TiSe4 crystal material. Further, the emitter substrate 7, the emitter stage 8, the receiver stage 3 and the receiver substrate 2 are all made of low doped silicon wafers, and the doping concentrations are all less than 10 17cm-3. Further, the vertical distance between the she