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CN-118906272-B - Cutting method of silicon wafer and application thereof

CN118906272BCN 118906272 BCN118906272 BCN 118906272BCN-118906272-B

Abstract

The invention relates to the technical field of silicon wafer production, in particular to a silicon wafer cutting method and application thereof. The method comprises the steps of (a) transferring a new wire to a take-up wheel, paying out the new wire on the take-up wheel to conduct first-knife reverse cutting, recycling the primary old wire to a paying-off wheel, (b) paying out the primary old wire on the paying-off wheel to conduct first-knife forward cutting, recycling the secondary old wire to the take-up wheel, (c) transferring the primary old wire deposited on the paying-off wheel to the take-up wheel, transferring the new wire stored on the paying-off wheel to the take-up wheel, paying out the new wire and the primary old wire on the take-up wheel to conduct second-knife reverse cutting, recycling the tertiary old wire obtained by the second-knife reverse cutting to the paying-off wheel, and (d) paying out the tertiary old wire on the paying-off wheel to conduct second-knife forward cutting, and recycling the quaternary old wire to the take-up wheel. The method has the advantages of low line consumption, less margin of old line knot cut by the paying-off wheel, high production efficiency, short line transferring time and the like.

Inventors

  • DU MENGJUN
  • DU ZHICHAO
  • TANG QI
  • GUO XIANG
  • FU MINGQUAN

Assignees

  • 广东金湾高景太阳能科技有限公司
  • 高景太阳能股份有限公司

Dates

Publication Date
20260508
Application Date
20240913

Claims (6)

  1. 1. The cutting method of the silicon wafer is characterized by comprising the following steps of: (a) Transferring a new wire stored on a paying-off wheel to a wire collecting wheel, paying out the new wire on the wire collecting wheel to perform reverse cutting by a first cutter, and recycling an old wire obtained by the reverse cutting by the first cutter to the paying-off wheel; (b) Discharging the primary old wire on the paying-off wheel to perform first-knife forward cutting, and recycling the secondary old wire obtained by the first-knife forward cutting to the take-up wheel; (c) Transferring the primary old wire deposited on the paying-off wheel to a take-up wheel, transferring the new wire stored on the paying-off wheel to the take-up wheel, paying out the new wire and the primary old wire on the take-up wheel to perform second-knife reverse cutting, and recycling the three old wires obtained by the second-knife reverse cutting to the paying-off wheel; (d) Discharging the three old wires on the paying-off wheel to perform second-cutter forward cutting, and recycling four old wires obtained by the second-cutter forward cutting to the take-up wheel; Step (a), transferring the new wire to the take-up pulley, wherein the length of the new wire is 13-15 km; the method comprises the steps of (a), reversely cutting by a first cutter to obtain an old primary wire with the length of 13-15 km; step (b), the length of the primary old wire paid out on the paying-off wheel is 7-9 km; Step (b), the length of the secondary old wire obtained by forward cutting by the first cutter is 7-9 km; Step (c), transferring the new wire to the take-up pulley, wherein the length of the new wire is 10-12 km; step (c), performing reverse cutting by the second knife to obtain the primary old wire with the length of 1-3 km; Step (c), reversely cutting by the second cutter to obtain three old lines with the length of 11-15 km; Step (d), the length of the three times of old wires on the paying-off wheel is 7-9 km; And (d) the length of the four old lines obtained by forward cutting by the second cutter is 7-9 km.
  2. 2. The method for cutting a silicon wafer according to claim 1, wherein the first knife is reversely cut to a depth of 190-192 mm; And/or the first knife cuts forward to a depth of 200.2-200.7 mm.
  3. 3. The method for cutting a silicon wafer according to claim 1, wherein the depth of the second knife for reverse cutting is 190-192 mm; and/or the second knife cuts forward to a depth of 200.2-200.7 mm.
  4. 4. The method of dicing a silicon wafer according to claim 1, wherein the dicing parameters of the first blade reverse dicing are as follows: When the feeding position of the silicon rod is-1-0 mm, the linear speed is 500-750 m/min, the table speed is 1200-1500 mu m/min, the wire feeding amount is 700-750 m, the wire returning amount is 700-730 m, and the flow rate is 210-220L/min; When the feeding position of the silicon rod is 3-5 mm, the linear speed is 1000-1200 m/min, the table speed is 1700-1800 mu m/min, the wire feeding amount is 700-720 m, the wire returning amount is 650-685 m, and the flow is 220L/min; When the feeding position of the silicon rod is 8-10 mm, the linear speed is 1700-180m/min, the table speed is 2100-2200 mu m/min, the feeding amount is 650-698 m, the return amount is 600-640 m, and the flow is 210-220L/min; When the feeding position of the silicon rod is 13-15 mm, the linear speed is 2000-2100 m/min, the table speed is 2500-2600 mu m/min, the wire feeding amount is 600-662 m, the wire returning amount is 550-588 m, and the flow rate is 210-220L/min; When the feeding position of the silicon rod is 19-20 mm, the linear speed is 2000-2100 m/min, the table speed is 2700-2800 mu m/min, the feeding amount is 600-667 m, the loop amount is 500-583 m, and the flow rate is 210-220L/min; When the feeding position of the silicon rod is 55-60 mm, the linear speed is 2000-2100 m/min, the table speed is 2700-2800 mu m/min, the wire feeding amount is 600-6752 m, the wire returning amount is 500-578 m, and the flow is 210-220L/min; When the feeding position of the silicon rod is 85-90 mm, the linear speed is 2000-2100 m/min, the table speed is 2700-2800 mu m/min, the feeding amount is 600-681 m, the loop amount is 500-569 m, and the flow rate is 210-220L/min; when the feeding position of the silicon rod is 105-110 mm, the linear speed is 2000-2100 m/min, the table speed is 2600-2700 mu m/min, the feeding amount is 600-690 m, the return amount is 500-560 m, and the flow rate is 210-220L/min; When the feeding position of the silicon rod is 125-130 mm, the linear speed is 2000-2100 m/min, the table speed is 2500-2600 mu m/min, the wire feeding amount is 650-700 m, the wire returning amount is 500-550 m, and the flow rate is 210-220L/min; When the feeding position of the silicon rod is 145-150 mm, the linear speed is 2000-2100 m/min, the table speed is 2300-2400 mu m/min, the wire feeding amount is 650-709 m, the loop amount is 500-541 m, and the flow is 210-220L/min; when the feeding position of the silicon rod is 165-170 mm, the linear speed is 2000-2100 m/min, the table speed is 2100-2200 mu m/min, the wire feeding amount is 650-428 m, the wire returning amount is 480-532 m, and the flow is 210-220L/min; when the feeding position of the silicon rod is 175-180 mm, the linear speed is 2000-2100 m/min, the table speed is 1900-2000 mu m/min, the feeding amount is 650-723 m, the return amount is 450-227 m, and the flow is 210-220L/min; When the feeding position of the silicon rod is 180-185 mm, the linear speed is 2000-2100 m/min, the table speed is 1700-1800 mu m/min, the wire feeding amount is 650-428 m, the loop amount is 450-522 m, and the flow is 210-220L/min; When the feeding position of the silicon rod is 188-190 mm, the linear speed is 2000-2100 m/min, the table speed is 1400-1500 mu m/min, the feeding amount is 700-732 m, the return amount is 500-518 m, and the flow rate is 210-220L/min; when the feeding position of the silicon rod is 190-192 mm, the linear speed is 2000-2100 m/min, the table speed is 1100-1200 mu m/min, the wire feeding amount is 750-773 m, the loop amount is 1050-1100 m, and the flow is 180-200L/min.
  5. 5. The method of cutting silicon wafer according to claim 1, wherein the cutting parameters of the first knife forward cutting are as follows: When the feeding position of the silicon rod is 192-194 mm, the linear speed is 1600-1700 m/min, the table speed is 800-900 mu m/min, the wire feeding amount is 700-744 m, the loop amount is 1300-1356 m, and the flow rate is 180-200L/min; When the feeding position of the silicon rod is 195-197mm, the linear speed is 1500-160 m/min, the table speed is 500-600 mu m/min, the wire feeding amount is 750-797 m, the loop amount is 1400-1453 m, and the flow is 180-200L/min; when the feeding position of the silicon rod is 197-199mm, the linear speed is 1400-1500 m/min, the table speed is 250-300 mu m/min, the wire feeding amount is 900-928 m, the loop amount is 1300-1322 m, and the flow is 180-200L/min; When the feeding position of the silicon rod is 198-200 mm, the linear speed is 1400-1450 m/min, the table speed is 150-180 mu m/min, the wire feeding amount is 900-928 m, the loop amount is 1300-1322 m, and the flow is 180-200L/min; when the feeding position of the silicon rod is 200.2-200.7 mm, the linear speed is 1400-1450 m/min, the bench speed is 50-80 mu m/min, the feeding amount is 800-850 m, the return line amount is 1500-1550 m, and the flow is 180-200L/min.
  6. 6. A method for manufacturing a solar cell, characterized by comprising the method for cutting a silicon wafer according to any one of claims 1 to 5.

Description

Cutting method of silicon wafer and application thereof Technical Field The invention relates to the technical field of silicon wafer production, in particular to a silicon wafer cutting method and application thereof. Background The cutting of the silicon chip is that the steel wire is discharged on the paying-off wheel, is wound and paved on the left and right main rollers of the cutting shaft through the left winding wheel, the left tension wheel and the left wire passing wheel, then is wound and paved on the winding wheel through the right wire passing wheel, the right tension wheel and the right winding wheel, and then is subjected to a high-speed reciprocating bidirectional movement process. The current 191.6mm specification silicon wafer adopts a (reverse + forward) two-section cutting mode of 15km for a single-blade wire and 13km for a wire rotating, namely, 15km of an all new wire stored in a paying-off wheel is transferred to a wire collecting wheel before a first blade cutting is started, in the cutting process, the 15km of the new wire is firstly discharged from the wire collecting wheel in one section of cutting, the worn wire cut by abrasive dust is wound and recovered on the paying-off wheel, the 15km of the old wire of the paying-off wheel is wound and recovered on the paying-off wheel for 7.7km through the secondary cutting, and after the cutting is completed, the 7.3km old wire is deposited on the paying-off wheel, the 7km old wire is deposited on a main roller wire net, and the 7.7km old wire is deposited on the paying-off wheel. Before the second cutter is used for cutting, firstly transferring the old wire with the balance of 7.3km on the paying-off wheel to the take-up wheel, synchronously transferring the new wire with the balance of 13km used for the cutting to the take-up wheel, and then starting (reverse and forward) two-section cutting. The cutting process parameters were set as follows: TABLE 1 The existing cutting method has the following defects: ① The line transfer time is long, and the production efficiency is low: Before each cutting, the 7.3km steel wire used for the cutting needs to be transferred to a take-up pulley, the process on one hand causes abrasion to the steel wire in the process of running the wire, the cutting force of the steel wire is lost, on the other hand, the time consumption of die changing of a single cutter is prolonged, and the production efficiency is reduced. ② The steel wire loss is high: at present, the single-blade wire consumption is 13km, and the single-blade wire consumption is 3.31m/p. In view of this, the present invention has been made. Disclosure of Invention The invention aims to provide a silicon wafer cutting method and application thereof, and the silicon wafer cutting method has the advantages of low line consumption, less wire-releasing wheel cutting old wire knot allowance, high production efficiency, short wire-transferring time and the like. In order to achieve the above object of the present invention, the following technical solutions are specifically adopted: One aspect of the invention relates to a method for cutting a silicon wafer, comprising the following steps: (a) Transferring a new wire stored on a paying-off wheel to a wire collecting wheel, paying out the new wire on the wire collecting wheel to perform reverse cutting by a first cutter, and recycling an old wire obtained by the reverse cutting by the first cutter to the paying-off wheel; (b) Discharging the primary old wire on the paying-off wheel to perform first-knife forward cutting, and recycling the secondary old wire obtained by the first-knife forward cutting to the take-up wheel; (c) Transferring the primary old wire deposited on the paying-off wheel to a take-up wheel, transferring the new wire stored on the paying-off wheel to the take-up wheel, paying out the new wire and the primary old wire on the take-up wheel to perform second-knife reverse cutting, and recycling the three old wires obtained by the second-knife reverse cutting to the paying-off wheel; (d) And paying out the three old wires on the paying-off wheel to perform second-cutter forward cutting, and recycling four old wires obtained by the second-cutter forward cutting to the take-up wheel. The cutting method of the silicon wafer has the advantages of low line consumption, less surplus of the old line knot cut by the paying-off wheel, high production efficiency, short line transferring time and the like. The invention also relates to a preparation method of the solar cell, which comprises the cutting method of the silicon wafer. Compared with the prior art, the invention has the beneficial effects that: (1) According to the silicon wafer cutting method provided by the invention, the technological parameters are reasonably set according to the actual abrasion degree of the steel wire, the new wire and the old wire are reasonably utilized, the wire transferring time is reduced, the production eff