CN-119020753-B - Vapor deposition device and substrate processing method

Abstract

The invention provides a vapor deposition apparatus and a substrate processing method. The vapor deposition device comprises a reaction cavity, a base component, a gas spray head and an inflation space, wherein the reaction cavity is used for executing a vapor deposition process, the base component is used for bearing a substrate and arranged below the reaction cavity, the gas spray head is arranged opposite to the base component and is positioned above the reaction cavity, the inflation space is formed between the base component and the gas spray head and can be switched between a high-pressure state and a low-pressure state, the upper surface of the base component is provided with a central region for bearing the substrate and an edge region surrounding the central region, a variable interval value is arranged between the edge region and the lower surface of the opposite gas spray head in the vapor deposition process, and the interval value in the high-pressure state is smaller than the interval value in the low-pressure state. The invention can ensure the step coverage rate and improve the processing efficiency.

Inventors

• ZHUANG YUFENG
• LV SHULIANG
• DONG WEI
• XIE ZHONGSHUAI
• LI YUAN

Assignees

• 中微半导体设备(上海)股份有限公司

Dates

Publication Date

20260508

Application Date

20230523

Claims (16)

1. 1. A vapor deposition apparatus, comprising: A reaction chamber for performing a vapor deposition process; a base assembly for carrying a substrate, disposed below the reaction chamber; The gas spraying head is arranged opposite to the base component and is positioned above the reaction cavity, the gas spraying head is used for introducing process gas or purge gas into the reaction cavity, an inflation space is formed between the base component and the gas spraying head, and the inflation space can be switched between a high-pressure state and a low-pressure state; The upper surface of the base component is provided with a central area for bearing a substrate and an edge area surrounding the central area, a variable interval value is arranged between the edge area and the lower surface of the opposite gas spray head in the vapor deposition process, and the interval value in the high-pressure state is smaller than the interval value in the low-pressure state; And a controller configured to supply the process gas when the plenum is in a high pressure state and supply the purge gas when the plenum is in a low pressure state.
2. 2. The vapor deposition apparatus of claim 1, wherein the reaction of the vapor deposition process comprises a first process gas and a second process gas, and wherein the controller is configured to place the plenum in a high pressure state when the first process gas or the second process gas is introduced, place the plenum in a low pressure state when the introduction of the first process gas or the second process gas is stopped, and introduce a purge gas into the plenum in the low pressure state.
3. 3. The vapor deposition apparatus of claim 1, wherein the susceptor assembly is capable of being in a transfer state, the spacing value in the transfer state being greater than the spacing value in the low pressure state.
4. 4. The vapor deposition apparatus according to claim 2 or 3, wherein in the high-pressure state, the susceptor assembly is raised or the gas shower head is lowered, and in the low-pressure state, the susceptor assembly is lowered or the gas shower head is raised.
5. 5. The vapor deposition apparatus of claim 1, wherein the susceptor assembly comprises an edge ring assembly at the edge region, an upper surface of the edge ring assembly being higher than an upper surface of the central region.
6. 6. The vapor deposition apparatus of claim 5, wherein the edge ring assembly comprises a first cover ring and a second cover ring disposed on an upper surface of the first cover ring.
7. 7. The vapor deposition apparatus according to claim 6, wherein the inner diameter of the first cover ring is smaller than the outer diameter of the substrate, a transfer port is provided on a side wall of the reaction chamber, when the susceptor assembly is lowered to the transfer port position, a central area of the susceptor assembly is lower than a horizontal plane where the transfer port is located, and a lower surface of the first cover ring is higher than the horizontal plane where the transfer port is located.
8. 8. The vapor deposition apparatus of claim 6, wherein a distance between the second cover ring and a lower surface of the gas showerhead in the high pressure state has a value of 2mm.
9. 9. The vapor deposition apparatus according to claim 6, wherein a radial width of the second cover ring is 30mm or more.
10. 10. The vapor deposition apparatus of claim 6, wherein a distance between the second cover ring and a lower surface of the gas showerhead in the low pressure state is between 5mm and 8 mm.
11. 11. The vapor deposition apparatus of claim 1, wherein the reaction chamber side wall is provided with an air extraction structure, the air extraction structure comprises an annular air extraction chamber, an air inlet of the air extraction chamber is communicated with the inflation space, and an air outlet of the air extraction chamber is communicated with an external air extraction device.
12. 12. The vapor deposition apparatus of claim 11, wherein the gas inlets are uniformly distributed along a circumference of the reaction chamber sidewall.
13. 13. The vapor deposition apparatus of claim 11, wherein the number of gas inlets is greater than 60.
14. 14. The vapor deposition apparatus of claim 11, wherein the diameter of the gas inlet is greater than 4mm.
15. 15. A substrate processing method implemented by using the vapor deposition apparatus according to any one of claims 1 to 14, characterized in that the method comprises the steps of: Controlling the inflation space to be switched into a high-pressure state, and introducing first process gas into the inflation space for a preset time; Controlling the inflation space to be switched into a low-pressure state, and introducing purge gas into the inflation space for a preset time; controlling the inflation space to be switched into a high-pressure state, and introducing second process gas into the inflation space for a preset time; Controlling the inflation space to be switched into a low-pressure state, and introducing purge gas into the inflation space for a preset time; repeating the steps until the film deposited on the surface of the substrate meets the requirements.
16. 16. The substrate processing method according to claim 15, further comprising: And controlling the base assembly to be switched into a sheet conveying state, and conveying the substrate to be processed into the reaction cavity or conveying the processed substrate out of the reaction cavity.

Description

Vapor deposition device and substrate processing method Technical Field The invention relates to the technical field of semiconductor equipment, in particular to a vapor deposition device and a substrate processing method. Background With the rapid update of integrated circuit technology, the requirements for thin film filling of high aspect ratio structures are becoming higher and higher, and the requirements for equipment are also becoming higher and higher, so that the process of atomic layer deposition or atomic layer-like deposition with high efficiency and low cost is becoming particularly important. Atomic layer deposition (Atomic Layer Deposition, ALD) is an atomic scale thin film fabrication technique. It can deposit uniform and uniform ultrathin film with controllable thickness and adjustable composition. With the development of nanotechnology and semiconductor microelectronics, the size requirements of devices and materials are increasing, and the aspect ratio in the device structure is increasing, which requires that the thickness of the materials used is reduced to the order of tens of nanometers to several nanometers. The atomic layer deposition technology has important application prospects in the fields of semiconductor devices, optical devices, biological materials, micro-nano structure electromechanical systems and the like, and the advantages of the atomic layer deposition technology determine that the ALD technology has great development potential and wider application space. An ideal ALD film growth process is to produce a deposited film by selectively alternating exposure of different process gases to the substrate surface where chemisorption reactions occur. In atomic deposition, the chemical reaction of a new atomic film is directly related to the previous layer in such a way that only one atomic layer is deposited per reaction. When ALD performs film growth, process gas is introduced into the reaction chamber in a pulse mode, and then purge gas is introduced to clean the reaction chamber so as to ensure the cleanliness of the internal environment of the reaction chamber, and the process is repeated for each subsequent deposition layer. In contrast to conventional Chemical Vapor Deposition (CVD) techniques, ALD techniques require that alternating pulses of process gases be performed strictly to avoid the process of vapor phase reactions. The ALD reaction process is generally shown in FIG. 1, and can be divided into four steps, namely, 1, A working, namely, injecting the first process gas A into the reaction cavity, 2, cleaning A, namely, introducing the purge gas to discharge the redundant first process gas A, 3, B working, namely, injecting the second process gas into the reaction cavity, and 4, cleaning B, namely, introducing the redundant second process gas B. And (3) in the steps (1) and (4), the A is in the charging state so as to ensure that the reaction chamber can be immediately accessed once the B is cleaned. A and B are two process gases, each of which is critical to the effectiveness of the ALD reaction and also to the effectiveness of thin film coverage, i.e., step coverage, of high aspect ratio structures on the substrate surface. In order to improve the production efficiency of ALD, how to ensure the effect at each step and reduce the step time becomes a urgent problem to be solved. Disclosure of Invention The invention aims to provide a vapor deposition device and a substrate processing method, which can ensure step coverage and improve processing efficiency. In order to achieve the above object, the present invention is realized by the following technical scheme: a vapor deposition apparatus, comprising: A reaction chamber for performing a vapor deposition process; a base assembly for carrying a substrate, disposed below the reaction chamber; The gas spraying head is arranged opposite to the base assembly and is positioned above the reaction cavity, an inflation space is formed between the base assembly and the gas spraying head, and the inflation space can be switched between a high-pressure state and a low-pressure state; the upper surface of the base assembly has a central region for carrying a substrate and an edge region surrounding the central region, the edge region having a variable spacing value between the edge region and an opposing lower surface of the gas showerhead during the vapor deposition process, the spacing value being smaller in the high pressure state than in the low pressure state. The vapor deposition apparatus further comprises a controller configured to place the plenum in a high pressure state when the first process gas or the second process gas is introduced, place the plenum in a low pressure state when the first process gas or the second process gas is stopped, and introduce a purge gas into the plenum in the low pressure state. Alternatively, the base assembly may be in a sheet transfer state in which the pitch value is greater than the