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CN-119208288-B - Glass substrate and manufacturing method thereof

CN119208288BCN 119208288 BCN119208288 BCN 119208288BCN-119208288-B

Abstract

The application discloses a glass substrate and a manufacturing method thereof, and relates to the technical field of semiconductor packaging. The glass substrate manufacturing method comprises the steps of forming a first seed layer, forming a first mask, carrying out through hole metallization, removing the first mask and the first seed layer covered by the first mask, carrying out hole plugging and forming a first resin layer, forming a second seed layer, forming a second mask, forming an inner circuit layer, removing the second mask and the second seed layer covered by the second mask, forming a second resin layer, forming through holes on the first surface and the second surface of the second resin layer, forming a third seed layer, forming a third mask, forming a circuit layer, removing the third mask and the third seed layer covered by the third mask, repeating at least one step to form a second resin layer, removing the third mask and the third seed layer covered by the third mask, manufacturing a solder mask layer and implanting balls, so as to reduce the warpage of the substrate and improve the reliability of the substrate.

Inventors

  • YU ZHONGYAO

Assignees

  • 中国科学院微电子研究所

Dates

Publication Date
20260508
Application Date
20240827

Claims (10)

  1. 1. A glass substrate, comprising: A glass core plate having a plurality of through holes, the glass core plate including a first surface and a second surface opposite in a thickness direction thereof; a first seed layer covering an inner wall of the through hole and a surrounding area of an orifice of the through hole; A metal layer covering the first seed layer, wherein a part of the metal layer located in the periphery area of the orifice of the through hole forms an annular metal pad; The hole plugging material is filled in the through hole; A first resin layer, the first resin layer being provided on both the first surface and the second surface of the glass core plate, and the annular metal pad being uncovered by the first resin layer, the annular metal pad being either level with the first resin layer or higher than the first resin layer; The second seed layer and the inner circuit layer are stacked, the second seed layer is positioned on one side surface of the first resin layer, which is away from the glass core plate, and the inner circuit layer covers one side surface of the second seed layer, which is away from the glass core plate; The multi-layer combined structure comprises a second resin layer, a third seed layer and a circuit layer which are sequentially arranged along the direction deviating from the glass core plate, wherein the second resin layer is provided with a through hole, and the third seed layer and the circuit layer are laminated on one side of the second resin layer deviating from the glass core plate; the solder mask is arranged on one side of the multilayer combined structure, which is away from the glass core plate; The solder balls are arranged on the solder mask layer, and the bottoms of the solder balls penetrate through the solder mask layer to be contacted with the outermost circuit layer; the hole plugging material is resin or metal; Or, the material of the hole plugging material is the same as that of the first resin layer, and when the resin is filled in the through holes, the filling resin and the first resin layer are completed simultaneously, and the resin is pressed at the first surface and the second surface of the glass core plate, so that the resin fills the through holes of the glass core plate and simultaneously forms the first resin layer on the first surface and the second surface of the glass core plate.
  2. 2. The glass substrate according to claim 1, wherein the resin comprises ABF, RCC and/or photosensitive dry film insulating layer material; the metal comprises copper, tungsten and/or titanium.
  3. 3. The glass substrate according to claim 1, wherein the first seed layer, the second seed layer and/or the third seed layer comprises at least one sub-metal layer, or, The first seed layer, the second seed layer and/or the third seed layer comprise a plurality of sub-metal layers, and the materials of the sub-metal layers are different.
  4. 4. The glass substrate according to claim 3, wherein the sub-metal layer is made of titanium, copper or tungsten.
  5. 5. The glass substrate of claim 1, wherein the solder balls comprise chip solder balls and substrate solder balls, the chip solder balls are arranged on a solder mask layer on one side of the glass core board, the substrate solder balls are arranged on a solder mask layer on the other side of the glass core board, the chip solder balls are used for bonding with chips, and the substrate solder balls are used for bonding with a printed circuit board.
  6. 6. A method for manufacturing a glass substrate, comprising: A glass core plate is perforated, a plurality of through holes are formed in the glass core plate, and the glass core plate is provided with a first surface and a second surface which are opposite; forming a first seed layer on the surface of the glass core plate provided with the through holes; Forming a first mask on the surface of the structure formed in the previous step, wherein the first mask covers the first surface and the second surface of the structure formed in the previous step except for the inner wall of the through hole and other parts of the surrounding areas of the orifice of the through hole; through hole metallization, forming a metal layer on the inner wall of the through hole of the glass core plate and the surrounding area of the hole opening of the through hole, and forming an annular metal bonding pad on the metal layer of the surrounding area of the hole opening of the through hole; removing the first mask and the first seed layer covered by the first mask; Filling resin or metal in the through hole of the glass core plate, and pressing resin on the first surface and the second surface of the glass core plate to form a first resin layer on the first surface and the second surface of the glass core plate; thinning the first resin layer so that the annular metal pad is exposed out of the first resin layer; forming a second seed layer on the surfaces of the first resin layers on two sides of the glass core plate; forming a second mask on the first surface and the second surface of the structure formed in the previous step, wherein the second mask has a hollowed-out structure; forming an inner circuit layer in the pattern of the second mask, wherein the part of the inner circuit layer opposite to the through hole and the surrounding area thereof is an orifice bonding pad, and the orifice bonding pad is used for connecting the circuit layer; removing the second mask and the second seed layer covered by the second mask; forming a second resin layer, and laminating resin on the first surface and the second surface of the structure formed in the previous step to form the second resin layer; Forming through holes in the second resin layers on the first surface and the second surface; Forming a third seed layer on the surfaces of the second resin layers on two sides of the glass core plate; forming a third mask on the first surface and the second surface of the structure formed in the previous step, wherein the third mask has a hollowed-out structure; forming a circuit layer in the hollowed-out structure of the third mask; removing the third mask and the third seed layer covered by the third mask; repeating the step at least once to form a second resin layer until the step removes the third mask and the third seed layer covered by the third mask; Manufacturing a solder mask layer on the first surface and the second surface of the structure formed in the previous step, wherein the solder mask layer is provided with a connecting hole corresponding to the circuit layer; and implanting balls, wherein the first surface and/or the second surface of the structure formed in the previous step are/is welded balls.
  7. 7. The method according to claim 6, wherein forming the first seed layer comprises forming the first seed layer on the surface of the glass core plate provided with the through-hole by deposition, and/or, The forming of the second seed layer comprises forming the second seed layer on the surfaces of the first resin layers on two sides of the glass core plate by utilizing a deposition mode, and/or, The forming of the third seed layer comprises the step of forming the third seed layer on the surfaces of the second resin layers on two sides of the glass core plate in a deposition mode.
  8. 8. The method according to claim 6, wherein the step of plugging is performed by filling resin into the through-holes of the glass core plate and pressing the resin against the first surface and the second surface of the glass core plate so that the resin fills the through-holes of the glass core plate and forms the first resin layer on the first surface and the second surface of the glass core plate.
  9. 9. The method of manufacturing a glass substrate according to claim 6, wherein the annular metal pad is level with the first resin layer or the annular metal pad is higher than the first resin layer after the step of thinning the first resin layer.
  10. 10. The method according to claim 6, wherein the first mask is formed on the surface of the structure formed in the previous step, in particular, the first mask is formed on the surface of the structure formed in the previous step by using photolithography to form a plating mask, and/or, The second mask is formed on the first surface and the second surface of the structure formed in the previous step, specifically, the second mask is formed on the first surface and the second surface of the structure formed in the previous step by adopting a photoetching manufacturing method for manufacturing an electroplating mask.

Description

Glass substrate and manufacturing method thereof Technical Field The application relates to the technical field of semiconductor packaging, in particular to a glass substrate and a manufacturing method thereof. Background In the prior art, the organic substrate is generally beneficial to realizing the interconnection of the packaged chip and the device with the PCB, so as to provide a data exchange path for the chip while supporting and protecting the chip. Today, the technologies of network and information technology develop at a high speed, such as AI, 5G, cloud computing, automatic driving and the like, and people have explosive growth on data demands, and requirements of data processing, data transmission and data storage on chips are continuously improved. In order to meet the requirement of huge amount of data processing on chips, the development of global integrated circuit technology at present improves the data processing capability, mainly follows two paths, namely, one is to utilize advanced technology nodes to continuously advance an integrated circuit to a large-size SOC (System on Chip) direction according to moore's law, the other technical path is to package chips with different IP, different technology nodes and different materials in a package body through three-dimensional heterogeneous integration, and the data processing capability of single package is improved through a high-density three-dimensional heterogeneous integration technology. The larger the SOC size, the more chips that are integrated in a single package, and the larger the substrate size that is required. As the substrate size increases, the substrate warpage increases significantly, with an increasing impact on the packaging process and reliability of the packaged device. Disclosure of Invention The application aims to provide a glass substrate and a manufacturing method thereof, which are used for reducing the warping of the substrate and improving the bonding force between an inner circuit layer and a glass core plate so as to improve the reliability of the substrate. In order to achieve the above object, the present application provides the following technical solutions: A glass substrate, comprising: A glass core plate having a plurality of through holes, the glass core plate including a first surface and a second surface opposite in a thickness direction thereof; a first seed layer covering an inner wall of the through hole and a surrounding area of an orifice of the through hole; A metal layer covering the first seed layer, wherein a part of the metal layer located in the periphery area of the orifice of the through hole forms an annular metal pad; The hole plugging material is filled in the through hole; A first resin layer, the first resin layer being provided on both the first surface and the second surface of the glass core plate, and the annular metal pad being uncovered by the first resin layer, the annular metal pad being either level with the first resin layer or higher than the first resin layer; The second seed layer and the inner circuit layer are stacked, the second seed layer is positioned on one side surface of the first resin layer, which is away from the glass core plate, and the inner circuit layer covers one side surface of the second seed layer, which is away from the glass core plate; the multi-layer combined structure comprises a second resin layer, a third seed layer and a circuit layer which are sequentially arranged along the direction deviating from the glass core plate, wherein the second resin layer is provided with a through hole, and the third seed layer and the circuit layer are laminated on one side of the second resin layer deviating from the glass core plate; the solder mask is arranged on one side of the multilayer combined structure, which is away from the glass core plate; and the solder balls are arranged on the solder mask layer ,, and the bottoms of the solder balls penetrate through the solder mask layer to be contacted with the outermost circuit layer. In one implementation, the plug hole material is resin, the resin comprises ABF, RCC and/or photosensitive dry film insulating layer material, or the plug hole material is the same as the material of the first resin layer, or, The plug hole material is metal, and the metal comprises copper, tungsten and/or titanium. In one implementation, the first seed layer, the second seed layer, and/or the third seed layer comprises at least one sub-metal layer, or, The first seed layer, the second seed layer and/or the third seed layer comprise a plurality of sub-metal layers, and the materials of the sub-metal layers are different. In one implementation, the material of the sub-metal layer is titanium, copper or tungsten. In one implementation, the solder balls include a chip solder ball and a substrate solder ball, the chip solder ball is disposed on a solder mask on one side of the glass chip, the substrate solder ball is disposed on a