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CN-119270580-B - Preparation method of high-resolution pattern and nano-imprinting pattern master mask

CN119270580BCN 119270580 BCN119270580 BCN 119270580BCN-119270580-B

Abstract

The application provides a preparation method of a high-resolution pattern and a nano-imprinting pattern master, which utilizes the characteristics of high selectivity, directionality and high step coverage of a film deposition process of a deep silicon etching technology to reduce the pattern size by depositing a film in a pattern gap, so that a nano-imprinting pattern with higher resolution and smaller size can be obtained on the premise of not improving the resolution of electron beam lithography, and simultaneously, the control of different morphologies of the nano-imprinting master and the reduction or amplification of the pattern size of the master can be realized by modifying the parameters of etching and film deposition, thereby obtaining the nano-imprinting patterns with different feature sizes. In addition, the preparation method of the application obtains the nano-imprint graph with adjustable size on the premise of not changing the mask, namely only one mask is used, thereby greatly simplifying the process flow and reducing the cost.

Inventors

  • ZHANG ZIAN
  • HUANG ZHAOXING

Assignees

  • 烟台齐新半导体技术研究院有限公司

Dates

Publication Date
20260505
Application Date
20241119

Claims (7)

  1. 1. A method for preparing a high resolution pattern, comprising the steps of: S100, providing a first substrate (10), and arranging a mask (12) with a first graph structure (14) on the first substrate (10); S200, preparing a second pattern structure (16) on the first substrate (10) through the first pattern structure (14) by adopting a deep silicon etching process, and removing the mask (12); S300, depositing a passivation layer (18) on the side of the second pattern structure (16) of the first substrate (10) so that the passivation layer (18) covers the inner wall of the second pattern structure (16) and the surface of the first substrate (10) to obtain a first nano-imprinting master (20), wherein after the passivation layer (18) is deposited, the gap width of the second pattern structure (16) is reduced from an initial width a1 to a1-2b1, and b1 is the thickness of the passivation layer deposited on the side wall of the second pattern structure (16); S400, filling master glue in a pattern gap of the first nano-imprinting master (20) so that the master glue is patterned into master glue patterns (22), and combining and transferring out the master glue patterns (22) through a soft film (24); S500, providing a second substrate (26), coating nano-imprinting glue (28) on the second substrate (26), capping the master pattern (22) on the nano-imprinting glue (28), performing ultraviolet curing treatment on the nano-imprinting glue (28), and separating the master pattern (22), namely forming a master pattern structure (30) on the nano-imprinting glue (28), wherein the gap width of the master pattern structure (30) is a1' =a1-2 b1.
  2. 2. A method of producing a high resolution pattern according to claim 1, wherein the passivation layer (18) is made of silicon dioxide or silicon nitride.
  3. 3. The method of manufacturing a high resolution pattern according to claim 1, wherein the passivation layer (18) is deposited by a low pressure chemical vapor deposition method, a thermal oxidation method, an atomic layer deposition method, or a plasma enhanced chemical vapor deposition method.
  4. 4. A method of producing a high resolution image as claimed in claim 1, wherein the flexible film (24) is a flexible transparent material.
  5. 5. A method for preparing a high resolution pattern, comprising the steps of: H100 providing a first substrate (10), providing a mask (12) having a first pattern structure (14) on said first substrate (10); H200, preparing a second pattern structure (16) on the first substrate (10) through the first pattern structure (14) by adopting a deep silicon etching process, and removing the mask (12); H300, depositing a passivation layer (18) on the side of the second pattern structure (16) of the first substrate (10) so that the passivation layer (18) covers the inner wall of the second pattern structure (16) and the surface of the first substrate (10), wherein after the passivation layer (18) is deposited, the gap width of the second pattern structure (16) is reduced from an initial width a2 to a 2b2, and b2 is the thickness of the passivation layer deposited on the side wall of the second pattern structure (16); h400, removing the part of the passivation layer (18) positioned on the surface of the first substrate (10) and the part of the bottom wall of the second graph structure (16) to obtain a second nano-imprint master (32); h500, filling master glue in the pattern gaps of the second nano-imprinting master (32) so that the master glue is patterned into master glue patterns (22), and combining and transferring out the master glue patterns (22) through a soft film (24); H600, providing a second substrate (26), coating nano-imprinting glue (28) on the second substrate (26), capping the master pattern (22) on the nano-imprinting glue (28), performing ultraviolet curing treatment on the nano-imprinting glue (28), and separating the master pattern (22), namely forming a master pattern structure (30) on the nano-imprinting glue (28), wherein the gap width of the master pattern structure (30) is a2' =a2-2 b2.
  6. 6. The method of claim 5, wherein said step H400 further comprises removing portions of said passivation layer (18) on a surface of said first substrate (10) and portions of a bottom wall of said second pattern structure (16) by ‌ ‌ reactive ion etching while partially isotropically etching said passivation layer (18) on sidewalls of said second pattern structure (16).
  7. 7. A nanoimprint master pattern, characterized in that it is produced by the method for producing a high-resolution pattern according to any one of claims 1 to 6.

Description

Preparation method of high-resolution pattern and nano-imprinting pattern master mask Technical Field The application relates to the technical field of nano-imprinting, in particular to a preparation method of a high-resolution pattern and a nano-imprinting pattern master plate. Background The nano imprinting technology is a micro-nano manufacturing technology based on micro-nano scale precision, and the micro-nano manufacturing technology realizes nano scale precision and resolution by imprinting a micro-structure pattern on a substrate, and has wide application prospects in the fields of semiconductor manufacturing, MEMS (micro electro mechanical systems), biomedicine and the like. The nanoimprint technology overcomes the difficulty of the traditional photoetching technology in terms of feature size reduction, and has the advantages of low cost, high resolution and high yield in terms of low-end photoetching manufacture. The preparation of the master for nano-imprinting is not separated from high-resolution lithography technologies such as electron beam lithography, and in order to further improve the resolution of the master for nano-imprinting, the method adopted in the general case is to improve the resolution of the electron beam lithography, but the improvement of the resolution of the electron beam lithography has technical limitations, such as high difficulty and high cost, and the electron beam lithography has the defects of long exposure time, high price, proximity effect and the like, so that the further development and popularization of the nano-imprinting technology are restricted. Therefore, how to obtain a high resolution, smaller size nanoimprint master without increasing the resolution of the e-beam lithography itself is a problem to be solved by those skilled in the art. Disclosure of Invention In view of the above, the application provides a method for preparing a high-resolution pattern and a nano-imprint pattern master, which can effectively solve the problems of high resolution difficulty, high cost and the like of the existing electron beam lithography. The application provides a preparation method of a high-resolution graph, which comprises the following steps: S100, providing a first substrate, and arranging a mask with a first graph structure on the first substrate; s200, preparing a second pattern structure on the first substrate through the first pattern structure by adopting a deep silicon etching process, and removing a mask; S300, depositing a passivation layer on the side of the second pattern structure of the first substrate, so that the passivation layer covers the inner wall of the second pattern structure and the surface of the first substrate, and obtaining a first nano imprinting master; S400, filling master glue in a pattern gap of the first nano-imprinting master, patterning the master glue into master glue patterns, and combining and transferring out the master glue patterns through a soft film; S500, providing a second substrate, coating nano imprinting glue on the second substrate, capping the master pattern on the nano imprinting glue, performing ultraviolet curing treatment on the nano imprinting glue, and separating the master pattern, namely forming a master pattern structure on the nano imprinting glue. In one embodiment, the passivation layer is made of silicon dioxide or silicon nitride. In an embodiment, the passivation layer is deposited by low pressure chemical vapor deposition, thermal oxidation, atomic layer deposition or plasma enhanced chemical vapor deposition. In one embodiment, the flexible membrane is a flexible transparent material. The application also provides a preparation method of the high-resolution graph, which comprises the following steps: h100, providing a first substrate, and arranging a mask with a first graph structure on the first substrate; H200, preparing a second pattern structure on the first substrate through the first pattern structure by adopting a deep silicon etching process, and removing a mask; H300, depositing a passivation layer on the side of the second pattern structure of the first substrate, so that the passivation layer covers the inner wall of the second pattern structure and the surface of the first substrate; H400, removing the part of the passivation layer positioned on the surface of the first substrate and the part of the bottom wall of the second graph structure to obtain a second nanometer imprint master; h500, filling master glue in the pattern gaps of the second nano imprinting master, patterning the master glue into master glue patterns, and combining and transferring out the master glue patterns through a soft film; And H600, providing a second substrate, coating nano imprinting glue on the second substrate, capping the master pattern on the nano imprinting glue, performing ultraviolet curing treatment on the nano imprinting glue, and separating the master pattern, namely forming a master pattern struc