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CN-119307863-B - Metal medium reinforced reflecting film with wavelength of 190-230nm and preparation method thereof

CN119307863BCN 119307863 BCN119307863 BCN 119307863BCN-119307863-B

Abstract

The application relates to the technical field of optical films, in particular to a metal medium reinforced reflecting film with the wavelength of 190-230nm and a preparation method thereof, wherein the metal medium reinforced reflecting film comprises a substrate, a main reflecting layer and a plurality of medium reinforced layers, the main reflecting layer is an Al layer, the medium reinforced layers are formed by alternately laminating MgF 2 layers and Al 2 O 3 layers, the number of layers of the medium reinforced layers is not more than 3, the physical thickness of the Al layer is 180+/-2% nm, the physical thickness of the MgF 2 layer is 26.43+/-2% nm, the physical thickness of the Al 2 O 3 layer is 36.65+/-2% nm, the evaporation rate of MgF 2 in the MgF 2 layer is 0.8+/-0.1 nm/s, and the evaporation rate of Al 2 O 3 in the Al 2 O 3 layer is 0.5+/-0.05 nm/s. The metal medium reinforced reflecting film has stable high reflectivity in the wave band of 190-230nm, high compactness and firmness between film layers and good durability.

Inventors

  • YIN YUHANG
  • ZHANG JUNLONG
  • YE KEFEI
  • ZHU XIANGFEI
  • ZHENG CHANGJUN
  • ZHOU YING
  • KE YU
  • LIU WEI
  • LIU XINXIN

Assignees

  • 武汉敢为科技有限公司

Dates

Publication Date
20260508
Application Date
20241216

Claims (2)

  1. 1. The preparation method of the metal medium reinforced reflecting film with the wavelength of 190-230nm is characterized by comprising the following steps: polishing the surface of a substrate (1) by adopting a polishing solution prepared from ferric oxide powder and absolute ethyl alcohol, then wiping the polished substrate (1) by adopting an absolute ethyl alcohol and diethyl ether mixed solution, and removing residual dirt on the surface to obtain a double-sided polished substrate material, wherein the substrate (1) adopts optical glass K9 or BK7; Baking the polished substrate (1), wherein the temperature is controlled to be 100+/-5 ℃ and the vacuum degree is controlled to be 1.8X10 -4 Pa-2.2×10 -4 Pa in the baking process; evaporating Al on the surface of the baked substrate (1) to form a main reflecting layer (2), wherein the main reflecting layer (2) is an Al layer, and the evaporation rate of Al is 3.0+/-0.1 nm/s when the Al layer is evaporated; Sequentially and alternately evaporating MgF 2 and Al 2 O 3 on the surface of the main reflecting layer (2) for two times, so as to form two dielectric reinforcing layers (3) to obtain a metal dielectric reinforced reflecting film with the wavelength of 190-230nm, wherein the dielectric reinforcing layers consist of MgF 2 layers (31) and Al 2 O 3 layers (32); The physical thickness of the MgF 2 layer (31) is 26.43+/-2% nm, the physical thickness of the Al 2 O 3 layer (32) is 36.65+/-2% nm, the evaporation rate of MgF 2 is 0.8+/-0.1 nm/s when the MgF 2 layer (31) is evaporated, the evaporation rate of Al 2 O 3 is 0.5+/-0.05 nm/s when the Al 2 O 3 layer (32) is evaporated, and in addition, the control temperature is 100+/-2 ℃ when the Al, the MgF 2 and the Al 2 O 3 are evaporated, and the vacuum degree is more than 9.0 x 10 -3 Pa.
  2. 2. A 190-230nm wavelength metal dielectric reinforcement as claimed in claim 1 the metal medium reinforced reflecting film with wavelength of 190-230nm is prepared through the preparation process.

Description

Metal medium reinforced reflecting film with wavelength of 190-230nm and preparation method thereof Technical Field The application relates to the technical field of optical films, in particular to a metal medium reinforced reflecting film with the wavelength of 190-230nm and a preparation method thereof. Background In an optical system, a metal dielectric enhanced reflective film is a composite optical film combining a metal and a dielectric material for enhancing the reflectivity of light and controlling the path of light, and is generally formed by alternately stacking one or more layers of a metal with high reflectivity (e.g., silver, aluminum, gold, etc.) and a dielectric material (e.g., silicon dioxide, titanium oxide, etc.), the metal layers providing high reflectivity, and the dielectric layers for adjusting the optical properties of the film. However, the reflectivity of the current metal medium enhanced reflection film in the wavelength range of 190-230nm is generally lower than 85%, and when the metal medium enhanced reflection film is applied to gas concentration detection equipment, the problem of low detection precision exists, especially low concentration gas detection. In addition, in the metal dielectric reinforced reflective film, the durability of the metal dielectric reinforced film is affected by the bonding firmness between the film layers, so that it is necessary to provide a metal dielectric reinforced reflective film having high reflectivity and high bonding firmness between the films. Disclosure of Invention The application aims to overcome the technical problems and provides a metal medium reinforced reflecting film with the wavelength of 190-230nm and a preparation method thereof. In a first aspect, the present application provides a metal dielectric enhanced reflection film with a wavelength of 190-230nm, which adopts the following technical scheme: The metal medium reinforced reflection film with the wavelength of 190-230nm comprises a substrate, a main reflection layer and a plurality of medium reinforced layers which are sequentially arranged, wherein the main reflection layer is an Al layer, the medium reinforced layers are formed by alternately laminating MgF 2 layers and Al 2O3 layers, the number of layers of the medium reinforced layers is not more than 3, the physical thickness of the Al layer is 180+/-2% nm, the physical thickness of the MgF 2 layer is 26.43+/-2% nm, the physical thickness of the Al 2O3 layer is 36.65+/-2% nm, the evaporation rate of Al in the Al layer is 3.0+/-0.1 nm/s, the evaporation rate of MgF 2 in the MgF 2 layer is 0.8+/-0.1 nm/s, and the evaporation rate of Al 2O3 in the Al 2O3 layer is 0.5+/-0.05 nm/s. By adopting the technical scheme, the Al layer is used as the main reflecting layer, high-efficiency reflection can be realized because the absorption rate of Al in an ultraviolet band is low, meanwhile, the MgF 2 layer and the Al 2O3 layer are alternately laminated to be used as the medium reinforcing layer, the MgF 2 and the Al 2O3 are excellent in light transmittance in the ultraviolet band, and the reflecting effect can be effectively enhanced after the MgF 2 layer and the Al 2O3 layer are alternately laminated, so that the reflectivity of the film layer is remarkably improved. In addition, the number of layers of the medium enhancement layer and the thicknesses of the Al layer, the MgF 2 layer and the Al 2O3 layer and the evaporation rate of three materials Al and MgF 2、Al2O3 also can obviously influence the reflectivity and the film-to-film bonding fastness of the metal medium enhancement reflection film, the number of layers of the medium enhancement layer is controlled to be 1-3, the physical thickness of the Al layer is controlled to be 180+/-2% nm, the physical thickness of the MgF 2 layer is controlled to be 26.43+/-2% nm, the physical thickness of the Al 2O3 layer is controlled to be 36.65+/-2% nm, and meanwhile, the reflectivity of the metal medium enhancement reflection film in a wave band of 190-230nm can reach more than 90% through the cooperation of the evaporation rates of the Al, the MgF 2 and the Al 2O3, so that the detection precision of the gas concentration can be effectively improved, and the metal medium enhancement reflection film can be suitable for detecting low-concentration gas. Meanwhile, in the metal medium reinforced reflecting film, the bonding fastness between film layers is high, and the wear resistance and durability of the metal medium reinforced reflecting film are good. In some specific embodiments, the film layer design structure of the metal dielectric enhanced reflection film is Sub/aAbLcHdLeH/O, wherein Sub represents a substrate, O represents air, a represents an Al layer, L represents an MgF 2 layer, H represents an Al 2O3 layer, a represents a physical thickness of the Al layer, b and d represent a physical thickness of the MgF 2 layer, and c and e represent a physical thickness of the Al 2O3 layer.