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CN-119480603-B - Radio frequency feed-in device and semiconductor process equipment

CN119480603BCN 119480603 BCN119480603 BCN 119480603BCN-119480603-B

Abstract

The application discloses a radio frequency feed-in device and semiconductor process equipment, and relates to the field of photovoltaics and semiconductors. The radio frequency feed-in device is used for feeding radio frequency power to a bearing boat, the bearing boat comprises radio frequency electrode plates and grounding electrode plates which are alternately stacked, the radio frequency feed-in device comprises a radio frequency power distribution part, a plurality of radio frequency feed-in parts and a grounding assembly, the radio frequency power distribution part is used for distributing radio frequency power to the radio frequency feed-in parts, each radio frequency feed-in part is provided with a radio frequency input end and a radio frequency output end, the radio frequency input end is used for receiving radio frequency signals corresponding to the radio frequency power, the radio frequency output end is used for being connected with at least one radio frequency electrode plate, and the grounding assembly is used for being connected with the grounding electrode plate. The application can solve the problems that the consistency of the radio frequency power between the polar plate layers can not be ensured, and the like.

Inventors

  • WEI XINFENG
  • LI BUZHONG
  • JIA SHILIANG
  • JIAN SHIJIE
  • JIANG WEI

Assignees

  • 北京北方华创微电子装备有限公司

Dates

Publication Date
20260508
Application Date
20241122

Claims (10)

  1. 1. A radio frequency feed-in device for feeding radio frequency power to a carrier boat (1) in a semiconductor process chamber (5), characterized in that the carrier boat (1) comprises alternately stacked radio frequency electrode plates (12 a) and ground electrode plates (12 b), and a plurality of layer spacings between the radio frequency electrode plates (12 a) and the ground electrode plates (12 b) are not identical; The radio frequency feed-in device (2) comprises a radio frequency power distribution part, a plurality of radio frequency feed-in parts (21) and a grounding component (22); The radio frequency power distribution part is at least used for distributing radio frequency power to the plurality of radio frequency feed-in parts (21) according to the plurality of interlayer distances; Each radio frequency feed-in piece (21) is provided with a radio frequency input end and a radio frequency output end, wherein the radio frequency input end is used for receiving radio frequency signals corresponding to the radio frequency power, and the radio frequency output end is used for being connected with at least one radio frequency electrode plate (12 a); The grounding assembly (22) is used for being connected with the grounding electrode plate (12 b).
  2. 2. The radio frequency feed-in device according to claim 1, characterized in that the radio frequency power distribution component is a matcher (6) or a circuit with a power distribution function.
  3. 3. The radio frequency feed device according to claim 1, wherein each of the radio frequency feed members (21) comprises a radio frequency feed rod (211) and a radio frequency feed block (212), the radio frequency feed rod (211) comprising the radio frequency input and the radio frequency feed block (212) comprising the radio frequency output; The radio frequency feed-in block (212) is connected to the radio frequency feed-in rod (211), and the radio frequency feed-in block (212) is used for being connected with at least one radio frequency electrode plate (12 a).
  4. 4. The radio frequency feed as recited in claim 1, wherein the plurality of layer spacings comprises a first layer spacing and a second layer spacing, the first layer spacing being greater than the second layer spacing; the radio frequency power distribution piece is at least used for distributing radio frequency power to the corresponding radio frequency electrode plate (12 a) according to the first interlayer distance and the second interlayer distance.
  5. 5. The radio frequency feed-in device according to claim 1 or 2, wherein the radio frequency feed-in device (2) further comprises a plurality of radio frequency power adjustment assemblies (23), and a plurality of the radio frequency power adjustment assemblies (23) are respectively arranged between the radio frequency power distribution assemblies and the corresponding radio frequency feed-in members (21).
  6. 6. The radio frequency feed-in device according to claim 5, characterized in that the radio frequency power adjustment assembly (23) comprises a connection bar (231), an adjustable capacitor (232) and an adjustable inductance (233); the input end of the connecting strip (231) is used for being connected with the radio frequency power distribution part, and the output end of the connecting strip (231) is correspondingly connected with the radio frequency feed-in part (21); the adjustable capacitor (232) and the adjustable inductor (233) are respectively connected to the connecting strip (231).
  7. 7. The radio frequency feed-in device according to claim 6, wherein said connection strip (231) comprises a main connection section (2311) and a plurality of branch connection sections (2312), said main connection section (2311) being adapted to be connected to said radio frequency power distribution member by means of connection posts (2313), each of said branch connection sections (2312) being correspondingly connected to said radio frequency feed-in member (21); The radio frequency power adjusting component (23) comprises a plurality of adjustable capacitors (232) and a plurality of adjustable inductors (233), the plurality of adjustable capacitors (232) are respectively connected to the plurality of branch connecting sections (2312), and the plurality of adjustable inductors (233) are respectively connected between the plurality of branch connecting sections (2312) and the main connecting section (2311).
  8. 8. The radio frequency feed device of claim 1, wherein the ground assembly (22) comprises a ground feed bar (221), a first ground feed block (222), and a plurality of second ground feed blocks (223); the grounding feed rod (221) is used for grounding; The second grounding feed-in blocks (223) are respectively connected with the grounding electrode plates (12 b), the second grounding feed-in blocks (223) are respectively connected with the first grounding feed-in blocks (222), and the first grounding feed-in blocks (222) are connected with the grounding feed-in rods (221).
  9. 9. A semiconductor process apparatus, characterized by comprising a process chamber (5), a carrier boat (1) and a radio frequency feed-in (2) according to any one of claims 1 to 8; the bearing boat (1) is arranged in the process chamber (5); The input end of the radio frequency feed-in device (2) is used for receiving radio frequency signals corresponding to the radio frequency power, and the output end of the radio frequency feed-in device (2) is used for outputting the radio frequency signals to the bearing boat (1).
  10. 10. The semiconductor processing apparatus of claim 9, wherein the radio frequency feed (2) comprises a feed connection assembly (24); The feed-in connection assembly (24) comprises a feed-in connection component (241), an isolation component (242) and a sealing component (243), wherein the feed-in connection component (241) is arranged on the cavity wall of the process chamber (5), and the feed-in connection component (241) is used for connecting the radio frequency power distribution component and the radio frequency feed-in component (21); The sealing component (243) is arranged on the outer side of the cavity wall, sleeved on the periphery of the feed-in connecting component (241) and used for sealing a gap between the feed-in connecting component (241) and the cavity wall; The isolation member (242) is arranged outside the process chamber (5) and sleeved on the periphery of the feed-in connecting member (241), and the isolation member (242) is abutted with the sealing member (243).

Description

Radio frequency feed-in device and semiconductor process equipment Technical Field The application belongs to the technical field of photovoltaics and semiconductors, and particularly relates to a radio frequency feed-in device and semiconductor process equipment. Background Heterojunction WITH INTRINSIC THIN-layer (HJT) solar cells are expected to be the next generation of cell technology due to the advantages of few process steps, high quality of the cell sheets and the like. The main process steps of HJT solar cells include cleaning texturing, amorphous silicon thin film deposition, conductive film deposition and screen printing. Wherein the amorphous silicon film Deposition is made by a PLASMA ENHANCED CHEMICAL Vapor Deposition (PECVD) device, and the common PECVD device is provided with a cluster type structure, a chain type structure and the like. The layout of the chain structure is shown in fig. 1, and the graphite boat 01 loaded with wafers is transferred to the preheating chamber through the feeding device, then enters the process chamber to perform corresponding processes, and after the processes are finished, the process flow is finished after the processes sequentially pass through the buffer chamber and the discharging device. In the Heterojunction (HJT) equipment production line, because the cost of the PECVD equipment occupies the main part of the production line equipment, in order to reduce the equipment cost, manufacturers in recent years increase the capacity of the equipment by increasing the carrying capacity of the carrier to achieve the purpose of reducing the cost. For example, as shown in fig. 2, the area of the carrier plate is increased by adopting a structure in which a plurality of graphite boats 01 are stacked, wherein the graphite boats 01 are used as electrode plates for carrying the carrier plate, and plasmas are generated between adjacent electrode plates, so that the equipment productivity is greatly increased without increasing the occupied area. Specifically, the graphite boat 01 includes an upper electrode plate 011, a lower electrode plate 012, and an inter-plate connecting bar 013, the upper electrode plate 011 and the lower electrode plate 012 are disposed at an interval, and support and fixation are achieved by the inter-plate connecting bar 013. In the related art, the radio frequency feed-in structures are respectively connected with the electrode plates of the graphite boat, so that radio frequency signals are respectively and uniformly transmitted to the different electrode plates in the graphite boat through the radio frequency feed-in structures. However, the radio frequency feed-in structure of the form cannot realize the adjustment of radio frequency power between different pole plate layers, so that the consistency of the radio frequency power between the pole plate layers cannot be ensured. Disclosure of Invention The embodiment of the application aims to provide a radio frequency feed-in device and semiconductor process equipment, which can solve the problems that the consistency of radio frequency power between polar plate layers cannot be ensured and the like. In order to solve the technical problems, the application is realized as follows: the embodiment of the application provides a radio frequency feed-in device which is used for feeding radio frequency power into a bearing boat in a semiconductor process chamber, wherein the bearing boat comprises radio frequency electrode plates and grounding electrode plates which are alternately overlapped; the radio frequency feed-in device comprises a radio frequency power distribution part, a plurality of radio frequency feed-in parts and a grounding component; the radio frequency power distribution part is used for distributing radio frequency power to the plurality of radio frequency feed-in parts; each radio frequency feed-in piece is provided with a radio frequency input end and a radio frequency output end, wherein the radio frequency input end is used for receiving radio frequency signals corresponding to radio frequency power, and the radio frequency output end is used for being connected with at least one radio frequency electrode plate; The grounding assembly is used for being connected with the grounding electrode plate. The embodiment of the application also provides semiconductor process equipment, which comprises a process chamber, a bearing boat and the radio frequency feed-in device; the bearing boat is arranged in the process chamber; the input end of the radio frequency feed-in device is used for receiving radio frequency signals corresponding to the radio frequency power, and the output end of the radio frequency feed-in device is used for outputting the radio frequency signals to the bearing boat. The radio frequency feed-in device in the embodiment of the application can be applied to a carrying boat comprising the alternately stacked radio frequency electrode plates and the grounding elec