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CN-119495544-B - Etching equipment, substrate processing system thereof and device preparation method

CN119495544BCN 119495544 BCN119495544 BCN 119495544BCN-119495544-B

Abstract

The invention discloses etching equipment, a substrate processing system and a device preparation method thereof, wherein the etching equipment is used for forming an isolation groove on the surface of a substrate and comprises an etching cavity, a base, a mask plate and an elastic medium layer, wherein a gas transmission port for transmitting etching gas is formed in the cavity of the etching cavity, the base is positioned in the etching cavity and used for bearing the substrate, the mask plate is positioned between the gas transmission port and the base, the distance between the mask plate and the base is adjustable, the mask plate comprises a support plate provided with a plurality of first gas channels, the elastic medium layer is positioned at the bottom of the support plate, a plurality of elastic medium layer coverage areas and a plurality of second gas channels positioned between different elastic medium layer coverage areas are formed at the bottom of the support plate, and the plurality of first gas channels are communicated with the second gas channels to jointly form an etching gas diffusion channel. The etching equipment has the advantages that the mask plate and the base which can move relatively are combined, the step of processing the substrate is simplified, the mask and the equipment are not required to be additionally added, and the production input cost is reduced.

Inventors

  • ZHANG HUI
  • ZHANG JIAHE

Assignees

  • 中微半导体设备(上海)股份有限公司

Dates

Publication Date
20260512
Application Date
20230821

Claims (18)

  1. 1. An etching apparatus for forming isolation trenches in a surface of a substrate, comprising: The etching cavity is provided with a gas transmission port, and the gas transmission port is used for transmitting etching gas; A susceptor for carrying a substrate, the susceptor being located inside the etching chamber; The mask plate is positioned between the gas transmission port and the base, the distance between the mask plate and the base is adjustable, the mask plate is detachable and replaceable, and the mask plate comprises: a support plate provided with a plurality of first gas passages; the elastic medium layer is positioned at the bottom of the supporting plate, a plurality of elastic medium layer coverage areas and a plurality of second gas channels positioned between different elastic medium layer coverage areas are arranged at the bottom of the supporting plate, and the plurality of first gas channels penetrate through the supporting plate to be communicated with the second gas channels and jointly form an etching gas diffusion channel; in the treatment process, at least part of the area of the bottom of the mask plate is attached to the upper surface of the substrate, and the area of the upper surface of the substrate, which is not attached to the bottom of the mask plate, is exposed at the outlet of the second gas channel, so that etching gas is in contact with the substrate below when flowing in the second gas channel.
  2. 2. The etching apparatus according to claim 1, wherein, The first gas channel comprises a through hole; And/or the second gas channel is a through hole or a through groove.
  3. 3. The etching apparatus according to claim 1, wherein, The width of the first gas channel ranges from 5 mu m to 10 mu m; and/or the width of the second gas channel is less than 15 μm; and/or the width of the second gas channel is greater than or equal to the width of the first gas channel.
  4. 4. The etching apparatus according to claim 1, wherein, The preparation material of the support plate comprises metal; And/or the preparation material of the elastic medium layer comprises at least one of fluororubber, teflon and a high polymer material.
  5. 5. The etching apparatus according to claim 1, further comprising: and a gas diffusion space is arranged between the mask plate and the gas transmission port, and the gas extraction channel is communicated with the first gas channel positioned at the circumferential edge so as to discharge reaction waste gas.
  6. 6. The etching apparatus according to claim 5, wherein, The outer periphery of the lower surface of the supporting plate is provided with a circle of elastic medium layer to form a sealing ring, and waste gas generated in the second gas channel is upwards communicated to the air suction channel through the first gas channels which are positioned at two ends of the second gas channel and close to the sealing ring.
  7. 7. The etching apparatus according to claim 6, wherein, The upper surface of the supporting plate comprises a plurality of connecting pipelines which are connected between a plurality of first gas channels and a plurality of air extraction channels for exhausting, or the upper surface of the supporting plate comprises an annular air extraction ring which is connected between a plurality of first gas channels and a plurality of air extraction channels for exhausting.
  8. 8. The etching apparatus according to claim 5, wherein, The mask plate is connected with the top of the etching cavity through the side wall extending upwards, and the mask plate, the side wall extending upwards of the mask plate and the top of the etching cavity jointly surround to form the gas diffusion cavity.
  9. 9. The etching apparatus according to claim 5, wherein, The bottom of the etching cavity is provided with an exhaust port, and the air suction channel is communicated with the exhaust port; Or the air suction channel passes through the opening on the etching cavity and is connected with a vacuum extraction device positioned outside the etching cavity.
  10. 10. The etching apparatus according to claim 1, wherein, The projection of the second gas channel on the substrate coincides with at least part of the cutting line of the substrate.
  11. 11. The etching apparatus according to claim 1, wherein, The mask plate is lifted by a lifting rod; and/or the base is lifted by the lifting column.
  12. 12. The etching apparatus according to claim 1, wherein, The mask plate comprises a downward extending part, and when at least part of the bottom area of the mask plate is attached to the upper surface of the substrate, the downward extending part is contacted and pressed with the outer edge of the upper surface of the base.
  13. 13. The etching apparatus according to claim 1, wherein, The surface of at least part of the area of the mask plate is provided with a corrosion-resistant film layer.
  14. 14. The etching apparatus according to claim 1, further comprising: A remote plasma source for delivering etching gas into the etching chamber through the gas delivery port; Or, the gas supply device is used for conveying etching gas into the etching cavity through the gas conveying port.
  15. 15. A substrate processing system, comprising: the etching apparatus according to any one of claims 1 to 14, which is configured to form isolation grooves on a surface of a substrate; a thin film deposition chamber for depositing a thin film on a surface of a substrate; And the transmission cavity is respectively communicated with the etching cavity of the etching equipment and the thin film deposition cavity.
  16. 16. The substrate processing system of claim 15, further comprising: and the loading and unloading cavity is communicated with the transmission cavity and is used for loading and unloading the substrate.
  17. 17. A method of making a device comprising: Growing a buffer layer on a substrate; Treating the substrate with the buffer layer by using the etching equipment according to any one of claims 1-14 to form isolation grooves on the substrate; A thin film is deposited on a substrate containing isolation trenches to produce a target device.
  18. 18. The method of manufacturing a device of claim 17, further comprising: The surface of the substrate is cleaned by a cleaning gas prior to depositing the thin film on the substrate.

Description

Etching equipment, substrate processing system thereof and device preparation method Technical Field The invention relates to the field of semiconductor equipment, in particular to etching equipment, a substrate processing system and a device preparation method thereof. Background With the vigorous development of semiconductor technology, the size of a chip is reduced, the integration level of a device is increased, and the process requirements of the semiconductor are also strict to ensure the quality of the chip. In order to explore the next generation of power devices, the problems of device integration level and size reduction are widely focused, the cost benefit and the synchronous improvement of the device performance can be obtained through the improvement of the device integration level, the stack layer number of the devices is also increased, thousands of technological processes are required from a silicon chip to the final package, and the multiple technological processes generate unavoidable complexity in the processing process, in particular to the multiple patterning technology. In the chip production process, various factors can influence the quality and yield of chip production, such as lattice adaptation, thermal adaptation, stress adaptation, the number of stacked layers of chips and the like among materials of each layer of the chip, and directly or indirectly determine the quality of finished chips. For example, the thermal property adaptability between the bottom substrate of the device and the device layer above the substrate determines the stress of the device in the growth process, and if the stress is too large, phenomena such as bending and cracking easily occur when an epitaxial film grows on the bottom substrate, which can cause defects of a finished device, affect the quality of the finished device and the yield of the finished product, further affect the yield and the preparation scale of an integrated circuit, and the like. Thus, improvements to existing production equipment or production modes are needed. It is to be understood that the foregoing is merely illustrative of the background art to which the present invention pertains and is not necessarily a representation of the prior art. Disclosure of Invention Based on the technical problems, the invention aims to provide etching equipment, a substrate processing system and a device preparation method thereof, wherein the etching equipment combines a mask plate and a base which can move relatively, so that the step of substrate processing is simplified, no additional mask or equipment is required, and the production input cost is reduced. In order to achieve the above purpose, the present invention is realized by the following technical scheme: an etching apparatus for forming isolation trenches in a surface of a substrate, comprising: The etching cavity is provided with a gas transmission port, and the gas transmission port is used for transmitting etching gas; A susceptor for carrying a substrate, the susceptor being located inside the etching chamber; The mask plate is positioned between the gas transmission port and the base, the distance between the mask plate and the base is adjustable, and the mask plate comprises: a support plate provided with a plurality of first gas passages; the elastic medium layer is positioned at the bottom of the supporting plate, a plurality of elastic medium layer coverage areas and a plurality of second gas channels positioned between different elastic medium layer coverage areas are arranged at the bottom of the supporting plate, and the plurality of first gas channels penetrate through the supporting plate to be communicated with the second gas channels and jointly form an etching gas diffusion channel; in the treatment process, at least part of the area of the bottom of the mask plate is attached to the upper surface of the substrate, and the area of the upper surface of the substrate, which is not attached to the bottom of the mask plate, is exposed at the outlet of the second gas channel, so that etching gas is in contact with the substrate below when flowing in the second gas channel. Optionally, the first gas channel includes a through hole; And/or the second gas channel is a through hole or a through groove. Optionally, the width of the first gas channel ranges from 5 μm to 10 μm; and/or the width of the second gas channel is less than 15 μm; and/or the width of the second gas channel is greater than or equal to the width of the first gas channel. Optionally, the preparation material of the support plate comprises a metal; And/or the preparation material of the elastic medium layer comprises at least one of fluororubber, teflon and a high polymer material. Optionally, the method further comprises: and a gas diffusion space is arranged between the mask plate and the gas transmission port, and the gas extraction channel is communicated with the first gas channel positioned at the circum