CN-119546175-B - AAO film-based nanofluid memristor and preparation method thereof

Abstract

The invention discloses a nano-fluid memristor based on an AAO film and a preparation method thereof, and the nano-fluid memristor specifically comprises the following steps: the glass substrate is provided with a first copper electrode, the first copper electrode is provided with a PDMS liquid storage tank, an AAO film and a CuSO 4 electrolyte are arranged in the PDMS liquid storage tank, and the top of the PDMS liquid storage tank is provided with a second copper electrode. The preparation method comprises the steps of placing a first copper electrode at the center of a glass substrate, dripping colloidal PDMS to the front end of the first copper electrode, punching a solidified PDMS layer by using a puncher to obtain a PDMS liquid storage tank, transferring an AAO film into the PDMS liquid storage tank, enabling the lower surface of the AAO film to be attached to the front end of the first copper electrode, filling CuSO 4 electrolyte into the PDMS liquid storage tank, placing a second copper electrode at the upper end of the PDMS liquid storage tank, and covering and sealing the PDMS liquid storage tank by using PDMS. The memristor has the advantages of small working voltage, low power consumption, simple preparation and good stability.

Inventors

• YU YEFENG
• BAO YUKUN
• XIAO YIKE
• SUN WEILING
• SONG JIANCHAO
• ZHOU YAHUI

Assignees

• 南京理工大学

Dates

Publication Date

20260512

Application Date

20241105

Claims (2)

1. 1. The nano-fluid memristor based on the AAO film is characterized by comprising a glass substrate, a PDMS liquid storage tank, an AAO film, cuSO 4 electrolyte, a first copper electrode and a second copper electrode; The glass substrate is a bottom plate of the memristor, a first copper electrode is arranged on the glass substrate, a PDMS liquid storage tank is arranged on the first copper electrode, an AAO film is arranged in the PDMS liquid storage tank and is filled with CuSO 4 electrolyte, and a second copper electrode is arranged at the top of the PDMS liquid storage tank; The AAO film comprises a plurality of nano channels which are parallel in a set scale and have inconsistent apertures at two ends, so as to form a nano channel array, and two ends of the nano channel array are respectively connected to a first copper electrode and a second copper electrode; Copper ions in the CuSO 4 electrolyte can react with the inner wall of the nano channel in the AAO film in a solid-liquid manner, so that the copper ions are adsorbed to the inner wall of the nano channel; The first copper electrode and the second copper electrode are used for applying voltage to two ends of a nano channel array in the AAO film, copper ions in the CuSO 4 electrolyte enter or leave the nano channel array under the drive of an electric field, the electric conduction of the nano channel array is changed through the adsorption and desorption of the copper ions on the inner wall of the nano channel, and the change has hysteresis compared with the voltage change applied by the electrodes, so that memristor effect is generated, and the nano fluid memristor based on the AAO film is realized; The thickness range of the glass substrate is 1-2 mm, the length range is 7-8 cm, and the width range is 2-3 cm; the PDMS liquid storage tank is made of polydimethylsiloxane, namely PDMS material; the AAO film is made of anodic aluminum oxide, namely AAO material; In the AAO film, the density of the nano channels is 280pore mu m -2 , and the average distance between the circle centers of two adjacent nano channels is 60nm; The geometric shape of the single nano channel is asymmetric, the pore diameters of two ends are inconsistent, the average pore diameter ranges of the two ends are respectively 20-30 nm and 40-50 nm, the depth range is 50-60 mu m, and the cross section is bullet-shaped; The number of the PDMS liquid reservoirs is 1, the shape of the PDMS liquid reservoirs is cubic, the length range is 5-20 mm, the width range is 5-15 mm, and the depth range is 1-3 mm; The length ranges of the first copper electrode and the second copper electrode are 20-40 mm, the width ranges are 1-5 mm, the thickness ranges are 0.1-0.2 mm, and the first copper electrode and the second copper electrode are respectively placed on the lower end face and the upper end face of the PDMS liquid storage tank.
2. 2. A method of fabricating an AAO thin film based nanofluid memristor of claim 1, comprising the steps of: step 1, placing a first copper electrode at the central position of a glass substrate, dripping colloidal PDMS to the front end of the first copper electrode, and heating the glass substrate to accelerate PDMS solidification; Step 2, punching holes on the solidified PDMS layer by using a puncher to obtain a PDMS liquid storage tank; Step 3, transferring the AAO film which is cut into a set size and contains the nano channel array into a PDMS liquid storage tank, enabling the lower surface of the AAO film to be attached to the front end of a first copper electrode on a glass substrate, and then filling CuSO 4 electrolyte into the PDMS liquid storage tank; step 4, placing a second copper electrode at the upper end of the PDMS liquid storage tank, and then covering and sealing the PDMS liquid storage tank by using PDMS; in the step 1, a first copper electrode is placed in the center of the glass substrate, and a gel-like PDMS is applied to the front end of the first copper electrode by dipping, and the glass substrate is heated to accelerate the curing of the PDMS, specifically as follows: Step 1.1, selecting a central position of a glass substrate, attaching one end of a first copper electrode to the central position, defining the end as a front end, defining the other end as a rear end, and horizontally attaching the first copper electrode to the glass substrate along the direction from the front end to the rear end; Step 1.2, fully mixing 0.5mL of PDMS precursor and a curing agent in a weight ratio of 10:1 to form gelatinous PDMS, standing the gelatinous PDMS to remove bubbles in the gelatinous PDMS, then dripping the gelatinous PDMS on the central part of the glass substrate, and covering the front end part of the first copper electrode, which is close to the center of the glass substrate, after the gelatinous PDMS is naturally spread; Step 1.3, placing the glass substrate on a heating table for heating, setting the heating temperature to be 120 ℃ and the time to be 2 hours, accelerating the curing of the gelatinous PDMS, and finally forming a cured PDMS layer; and (4) placing a second copper electrode at the upper end of the PDMS liquid storage tank, and then covering and sealing the PDMS liquid storage tank by using PDMS, wherein the method comprises the following steps of: Step 4.1, taking a glass substrate, fully mixing 0.5mL of PDMS precursor and a curing agent according to the weight ratio of 10:1 to form colloidal PDMS, standing the colloidal PDMS to remove bubbles in the colloidal PDMS, then dripping the colloidal PDMS on the central part of the glass substrate, and naturally spreading the PDMS; step 4.2, placing the glass substrate on a heating table for heating to accelerate the curing of the gelatinous PDMS, and finally forming a cured PDMS layer; and 4.3, removing the cured PDMS layer from the glass substrate, aligning and covering the upper end of the PDMS liquid storage tank, and covering and sealing the PDMS liquid storage tank by using PDMS to prevent volatilization of CuSO 4 electrolyte in the PDMS liquid storage tank.

Description

AAO film-based nanofluid memristor and preparation method thereof Technical Field The invention relates to the technical field of micro-nano electronic devices, in particular to a nano fluid memristor based on an AAO film and a preparation method thereof. Background The present-stage digital computers are all based on a traditional von neumann architecture featuring a separation of memory cells from computing cells, which prevents the rapid exchange and efficient processing of large amounts of data, thus creating von neumann bottlenecks. In biology, research proves that the power consumption of the human brain is only about 20W, and the human brain has compact volume and high calculation efficiency. In biological neural networks, neurons store information and also process and spread the information. It is therefore desirable to mimic the biological brain to develop a computational architecture that can be integrated, i.e., neuromorphic computation, to achieve a low power consumption computational approach. The advent of memristive devices has accelerated the development of neuromorphic calculations. Memristors are a fourth type of basic circuit element, the concept of which was first proposed by Cai Shaotang in 1971 to represent the relationship between charge and magnetic flux. The resistance of the memristor changes with the change of the historically passing charge amount, so the memristor has memory property and similar function to biological synapses. In 2008, after the hewlett packard laboratory prepares the memristor object for the first time, people try to simulate synaptic plasticity by using the memristor to realize synaptic function in the neural network. The nonvolatile characteristic of the device also determines that the weight of the artificial neural network based on the memristor can be maintained after the artificial neural network is powered off. Memristors have excellent performances in aspects of high-density integration, quick response and the like, and key support is provided for performance improvement of neuromorphic calculation. At present, the traditional solid-state memristor is often used as synapse in an artificial neural network to realize various neural network functions, but the power consumption of the solid-state memristor is still difficult to reach the degree of biological neurons. Solid-state memristors mostly rely on electron transmission in solid-state media, but in organisms, synapses are based on ion transmission information in a liquid environment, and ions are wider in variety, better in biocompatibility and stronger in electromagnetic interference resistance compared with electrons, so that people start to try to simulate synapses and establish memristors which use ion transmission at a nanoscale, namely nanofluid memristors. At present, nano-fluid memristors based on different mechanisms such as ion adsorption, interface movement, channel switching and the like are realized, but the nano-fluid memristors still face the challenges of large working voltage, large energy consumption, complex preparation and the like. Disclosure of Invention The invention aims to provide an AAO film-based nano fluid memristor with the advantages of small working voltage, low power consumption, simple preparation and good stability and a preparation method thereof. The nano fluid memristor based on the AAO film comprises a glass substrate, a PDMS liquid storage tank, the AAO film, a CuSO 4 electrolyte, a first copper electrode and a second copper electrode; The glass substrate is a bottom plate of the memristor, a first copper electrode is arranged on the glass substrate, a PDMS liquid storage tank is arranged on the first copper electrode, an AAO film is arranged in the PDMS liquid storage tank and is filled with CuSO 4 electrolyte, and a second copper electrode is arranged at the top of the PDMS liquid storage tank; The AAO film comprises a plurality of nano channels which are parallel in a set scale and have inconsistent apertures at two ends, so as to form a nano channel array, and two ends of the nano channel array are respectively connected to a first copper electrode and a second copper electrode; Copper ions in the CuSO 4 electrolyte can react with the inner wall of the nano channel in the AAO film in a solid-liquid manner, so that the copper ions are adsorbed to the inner wall of the nano channel; the first copper electrode and the second copper electrode are used for applying voltage to two ends of a nano channel array in the AAO film, copper ions in the CuSO 4 electrolyte enter or leave the nano channel array under the drive of an electric field, the electric conduction of the nano channel array is changed through the adsorption and desorption of the copper ions on the inner wall of the nano channel, and the change has hysteresis compared with the voltage change applied by the electrodes, so that memristor effect is generated, and the nano fluid memristor based on the AAO