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CN-119560359-B - Plasma processing apparatus and plasma confinement ring thereof

CN119560359BCN 119560359 BCN119560359 BCN 119560359BCN-119560359-B

Abstract

The utility model provides a plasma treatment equipment and plasma confinement ring thereof, the plasma confinement ring encircles and sets up between the lateral wall of base periphery and vacuum reaction chamber, the plasma confinement ring contains inner ring subassembly and outer loop subassembly and connects the exhaust passage subassembly of inner ring subassembly and outer loop subassembly respectively, inner ring subassembly and the peripheral contact of base, the top of inner ring subassembly flushes with the top of base, outer loop subassembly and the lateral wall contact of vacuum reaction chamber, the top surface of exhaust passage subassembly is less than the top surface of inner ring subassembly. The invention reduces the risk of plasma leakage, reduces the risk of arc discharge under high power, reduces the corrosion of plasma to the protective coating coated on the surface of the plasma confinement ring, and improves the reliability of equipment.

Inventors

  • ZHANG YICHUAN
  • FAN GUANGWEI
  • Gu Jiqiang

Assignees

  • 中微半导体设备(上海)股份有限公司

Dates

Publication Date
20260512
Application Date
20230901

Claims (13)

  1. 1. A plasma confinement ring for surrounding a susceptor, comprising: an inner ring assembly having a top surface and a bottom surface surrounding a periphery of the base; an outer ring assembly surrounding the inner ring assembly; an exhaust channel assembly connected with the inner ring assembly and the outer ring assembly by a connection, a top surface of the exhaust channel assembly being lower than top surfaces of the inner ring assembly and the outer ring assembly, and a bottom surface of the exhaust channel being lower than bottom surfaces of the inner ring assembly and the outer ring assembly, the exhaust channel assembly having a plurality of gas channels for exhausting gas to an exhaust region below the plasma confinement ring.
  2. 2. The plasma confinement ring of claim 1, wherein a top of the exhaust channel assembly is connected to a bottom of the inner ring assembly and a bottom of the outer ring assembly.
  3. 3. The plasma confinement ring of claim 2, wherein a height of the exhaust channel assembly is less than or equal to a height of the inner ring assembly and the outer ring assembly.
  4. 4. The plasma confinement ring of claim 3, wherein the aspect ratio of the gas channel is 4:1 or greater.
  5. 5. The plasma confinement ring of claim 1, wherein a surface of the plasma confinement ring has a protective coating.
  6. 6. The plasma confinement ring of claim 5, wherein the protective coating comprises a material comprising at least one of an anodized layer and yttria.
  7. 7. The plasma confinement ring of claim 1 wherein said exhaust passage assembly comprises a plurality of concentrically disposed annular louvers and at least one connecting rib, said gas passage being formed between adjacent ones of said annular louvers, said connecting rib being adapted to connect adjacent ones of said annular louvers.
  8. 8. The plasma confinement ring of claim 7, wherein the plurality of concentrically disposed annular louvers comprises a first annular louver having a minimum diameter and a second annular louver having a maximum diameter; the plasma confinement ring further comprises: A first connector for connecting the inner ring assembly with the first annular louver; And the second connecting piece is used for connecting the outer ring assembly and the second annular grid plate.
  9. 9. The plasma confinement ring of claim 1, wherein the material of the plasma confinement ring comprises at least a metallic material.
  10. 10. A plasma processing apparatus, comprising: A vacuum reaction chamber; The gas spray head is arranged at the top of the vacuum reaction cavity and is used as an upper electrode of the vacuum reaction cavity; the base is positioned in the vacuum reaction cavity and used for supporting a substrate, and the base and the gas spray head are arranged opposite to each other and serve as a lower electrode of the vacuum reaction cavity; The plasma confinement ring of any of claims 1-9, disposed circumferentially between the pedestal periphery and the sidewall of the vacuum reaction chamber, below which is an exhaust region, comprising an inner ring assembly in contact with the pedestal periphery, an outer ring assembly having a top flush with the top of the pedestal, and an exhaust channel assembly having a top surface lower than the top surface of the inner ring assembly; And the exhaust device is connected with the exhaust area in the vacuum reaction cavity and is used for exhausting the reaction byproducts out of the vacuum reaction cavity and maintaining the vacuum environment of the vacuum reaction cavity.
  11. 11. The plasma processing apparatus according to claim 10, wherein a radio frequency power source is applied to the upper electrode or the lower electrode, and a total power of the radio frequency power source is 10KW or more.
  12. 12. The plasma processing apparatus according to claim 10, wherein the plasma processing apparatus further comprises: A middle grounding ring arranged below the plasma confinement ring and used for providing electric field shielding for the plasma confinement ring; The lower grounding ring is arranged below the middle grounding ring and is electrically connected with the middle grounding ring so as to form a radio frequency grounding loop in the vacuum reaction cavity.
  13. 13. The plasma processing apparatus of claim 10 wherein the plasma confinement ring comprises a plurality of third connectors fixedly connecting the outer ring assembly to a sidewall of the vacuum reaction chamber.

Description

Plasma processing apparatus and plasma confinement ring thereof Technical Field The invention relates to the field of semiconductors, in particular to plasma processing equipment and a plasma confinement ring thereof. Background In the process of processing a substrate by plasma processing equipment, the substrate is firstly fixedly placed in a plasma reaction cavity, then radio frequency energy is emitted into the plasma reaction cavity through a radio frequency power emission device to form a radio frequency electric field, then various reaction gases are injected into the plasma reaction cavity, the injected reaction gases are excited into a plasma state above the substrate under the action of the radio frequency electric field, finally chemical reaction and/or physical action between the plasma and the substrate are carried out to form various characteristic structures, volatile reaction products formed in the chemical reaction are separated from the surface of etched substances, and the plasma reaction cavity is pumped out by a vacuumizing system. In order to avoid damage to the reaction by-products that carry the plasma out of the plasma processing region as they exit the chamber, a plasma confinement Ring (confinement Ring), i.e., a FEIS Ring (Flow Equalizing Ion SHIELD RING flow equalization ion shield Ring), is typically positioned between the susceptor carrying the substrate and the chamber sidewall. The plasma confinement ring is provided with a plurality of gas channels penetrating through the upper surface and the lower surface of the confinement ring, and the plasma confinement ring can ensure that charged particles in the plasma gas formed above the base are all extinguished when the plasma gas flows through the confinement ring, so that neutral gas flows downwards. With the development of ultra-high aspect ratio etching in semiconductor manufacturing, high radio frequency power is often required, the density of plasma in a plasma treatment area is higher due to the increase of the radio frequency power, arc discharge is easy to occur, damage is caused to devices in a cavity, the energy of the plasma is also higher due to the increase of the radio frequency power, and plasma leakage is easy to occur when plasma gas flows through a confinement ring. The statements herein merely provide background information related to the present disclosure and may not necessarily constitute prior art. Disclosure of Invention The invention aims to provide plasma treatment equipment and a plasma confinement ring thereof, so that the risk of plasma leakage is reduced, the risk of arc discharge under high power is reduced, the corrosion of plasma to a protective coating coated on the surface of the plasma confinement ring is also reduced, and the reliability of the equipment is improved. In order to achieve the above object, the present invention provides a plasma confinement ring comprising: an inner ring assembly; an outer ring assembly surrounding the inner ring assembly; An exhaust passage assembly coupled to the inner ring assembly and the outer ring assembly, a top surface of the exhaust passage assembly being lower than a top surface of the inner ring assembly, the exhaust passage assembly having a plurality of gas passages for exhausting gas to an exhaust region below the plasma confinement ring. The top of the exhaust passage assembly is connected with the bottom of the inner ring assembly and the bottom of the outer ring assembly. The height of the exhaust passage component is smaller than or equal to the heights of the inner ring component and the outer ring component. The depth-to-width ratio of the gas channel is more than or equal to 4:1. The surface of the plasma confinement ring has a protective coating. The material of the protective coating at least comprises an anodic oxidation layer and yttrium oxide. The exhaust passage component comprises a plurality of annular grid plates which are concentrically arranged and at least one connecting rib, a gas passage is formed between two adjacent annular grid plates, and the connecting rib is used for connecting the adjacent annular grid plates. The plurality of concentrically disposed annular louvers includes a first annular louver having a minimum diameter and a second annular louver having a maximum diameter; the plasma confinement ring further comprises: A first connector for connecting the inner ring assembly with the first annular louver; And the second connecting piece is used for connecting the outer ring assembly and the second annular grid plate. The material of the plasma confinement ring at least comprises a metal material. The present invention also provides a plasma processing apparatus comprising: A vacuum reaction chamber; The gas spray head is arranged at the top of the vacuum reaction cavity and is used as an upper electrode of the vacuum reaction cavity; the base is positioned in the vacuum reaction cavity and used for supporting a sub