CN-119626881-B - Semiconductor processing equipment

CN119626881BCN 119626881 BCN119626881 BCN 119626881BCN-119626881-B

Abstract

The application discloses semiconductor process equipment, and relates to the field of photovoltaics and semiconductors. The semiconductor process equipment comprises a bearing boat and a radio frequency isolation device, wherein the bearing boat comprises a plurality of heating plates serving as radio frequency electrode plates or grounding electrode plates respectively, the heating plates are provided with heating pieces, one ends of the heating pieces are led out relative to the heating plates, the heating pieces comprise metal sleeves, the radio frequency isolation device comprises a first isolation assembly, the first isolation assembly comprises isolation rings, and the isolation rings are connected to the metal sleeves and used for blocking radio frequency signals in the heating plates from being transmitted out through the metal sleeves. The application can solve the problems of radio frequency leakage and the like.

Inventors

WEI XINFENG
ZHENG JIANYU
YAN ZHISHUN
JIANG WEI
JIAN SHIJIE

Assignees

北京北方华创微电子装备有限公司

Dates

Publication Date: 20260508
Application Date: 20241122

Claims (15)

1. The semiconductor process equipment is characterized by comprising a bearing boat and a radio frequency isolation device; The bearing boat comprises a plurality of heating plates which are respectively used as radio frequency electrode plates or grounding electrode plates, the heating plates are provided with heating pieces, one ends of the heating pieces are led out relative to the heating plates, the heating pieces comprise metal sleeves and heating wire core wires, the heating wire core wires are arranged on the inner sides of the metal sleeves in a penetrating mode, insulating layers are arranged between the heating wire core wires and the metal sleeves, and leading-out ends of the heating wire core wires are used for being connected with cables through transfer wires; The radio frequency isolation device comprises a first isolation component, wherein the first isolation component comprises an isolation ring, and the isolation ring is connected with the metal sleeve and used for blocking radio frequency signals in the heating plate from being transmitted out through the metal sleeve.
2. The semiconductor processing apparatus of claim 1, wherein the spacer ring is disposed at one end of the heating element and is connected to an end surface of the metal sleeve; or the isolating ring is arranged between one end of the heating piece and the edge of the heating plate, and the metal sleeve is divided into two parts in the axial direction of the metal sleeve.
3. The semiconductor processing apparatus of claim 2 wherein said spacer ring comprises a metallic ring and a non-metallic ring, said metallic ring being coupled to said metallic sleeve; the shaft end of one of the nonmetallic ring and the metallic ring is provided with a connecting groove, the shaft end of the other one is provided with a connecting protrusion, and the connecting protrusion is in fit connection with the connecting groove; And/or the metal ring is connected to the non-metal ring at least one axial end.
4. The semiconductor processing apparatus of claim 1, wherein the first isolation assembly further comprises a first shield sleeve connecting the isolation ring and the load boat and sleeved outside the metal sleeve for blocking the plasma.
5. The semiconductor processing apparatus of claim 1, wherein the rf isolation device further comprises a second isolation assembly and a first press block, the second isolation assembly is configured to be disposed outside the transfer wire, one end of the second isolation assembly is in butt joint with the first isolation assembly, and the first press block is in butt joint with the other end of the second isolation assembly and is connected to the heating plate through a fastener.
6. The semiconductor processing apparatus of claim 5, wherein the second isolation assembly comprises a second protective sheath, a fourth protective sheath, and a third protective sheath disposed in sequence; The second protective sleeve is sleeved on the outer side of the joint of the transfer wire and the heating wire core wire; The third protective sleeve is sleeved on the outer side of the joint of the transfer wire and the cable; The fourth protective sleeve is sleeved outside the area between the two ends of the transfer wire.
7. The semiconductor processing apparatus according to claim 5, wherein the lead-out end of the heater wire core wire of each of the heater plates is led out in a plate surface direction of the heater plate such that total lengths of the heater wire core wires, the transfer wires, and the cables corresponding to a plurality of the heater plates are equal; And/or, the first isolation component and the second isolation component extend along the plate surface direction of the corresponding heating plate.
8. The semiconductor processing apparatus of claim 1 wherein the carrier boat further comprises a thermocouple, a detection end of the thermocouple being disposed on the heating plate; the radio frequency isolation device further comprises a third isolation component, and the third isolation component is arranged on the outer side of the thermocouple.
9. The semiconductor processing apparatus of claim 8, wherein the third isolation assembly comprises a fifth protective sheath, a sixth protective sheath, and a second press block; the fifth protective sleeve is sleeved on the periphery and the end part of the thermocouple, which are arranged at one end of the heating plate; The second pressing block is connected to the heating plate through a fastener, and the fifth protective sleeve is arranged between the second pressing block and the heating plate; The sixth protective sleeve is sleeved on the outer side of the thermocouple and is in butt joint with the second pressing block.
10. The semiconductor processing apparatus of claim 9, wherein the fifth protective sheath is slidably coupled to the second press block in an extension direction of the thermocouple; the third isolation assembly further comprises an elastic piece and a limiting piece, wherein the limiting piece is connected to the thermocouple or the fifth protective sleeve, and the elastic piece is elastically connected with the limiting piece and the second pressing block.
11. The semiconductor processing apparatus of claim 9, wherein the sixth protective sleeve comprises a plurality of sleeve units arranged in sequence, and two adjacent sleeve units are connected in a sliding manner along the extending direction of the thermocouple; and/or one end of the sixth protective sleeve is connected with the second pressing block in a sliding manner along the extending direction of the thermocouple.
12. The semiconductor processing apparatus of claim 8, further comprising a filter connected to the heating element and the thermocouple by a cable, respectively, the filter for processing radio frequency signals leaking through the cable.
13. The semiconductor processing apparatus of claim 8, further comprising a process chamber and a sealing device; The bearing boat and the radio frequency isolation device are arranged in the process chamber; the heating piece and the thermocouple extend to the outer side of the process chamber through cables respectively; The sealing device is in sealing connection between the cable and the side wall of the process chamber.
14. The semiconductor processing apparatus of claim 13, wherein the sealing means comprises a mounting member, a third press block, a top block, a spacer sleeve, and a locking member; the mounting component is connected to a side wall of the process chamber; The side wall of the process chamber is provided with a mounting hole, the isolation sleeve is movably arranged on the mounting component, and at least part of the isolation sleeve is arranged in the mounting hole; The third pressing block is movably arranged on the mounting part and is abutted with the isolation sleeve; The jacking block is connected to the mounting component through the locking piece and is abutted against the third pressing block; The cable passes out of the process chamber via the mounting member and the third press block.
15. The semiconductor processing apparatus of claim 14, wherein the sealing arrangement further comprises a first seal, a second seal, and a third seal; The first sealing piece is connected between the isolation sleeve and the side wall of the process chamber in a sealing way; The second sealing element is connected between the mounting component and the isolation sleeve in a sealing way; the third sealing piece is connected between the third pressing block and the isolation sleeve in a sealing mode.

Description

Semiconductor processing equipment Technical Field The application belongs to the technical field of photovoltaics and semiconductors, and particularly relates to semiconductor process equipment. Background Heterojunction WITH INTRINSIC THIN-layer (HJT) solar cells are expected to be the next generation of cell technology due to the advantages of few process steps, high quality of the cell sheets and the like. The main process steps of HJT solar cells include cleaning texturing, amorphous silicon thin film deposition, conductive film deposition and screen printing. Wherein the amorphous silicon film Deposition is made by a PLASMA ENHANCED CHEMICAL Vapor Deposition (PECVD) device, and the common PECVD device is provided with a cluster type structure, a chain type structure and the like. The layout of the chain structure is shown in fig. 1, and the graphite boat 01 loaded with wafers is transferred to the preheating chamber through the feeding device, then enters the process chamber to perform corresponding processes, and after the processes are finished, the process flow is finished after the processes sequentially pass through the buffer chamber and the discharging device. In the Heterojunction (HJT) equipment production line, because the cost of the PECVD equipment occupies the main part of the production line equipment, in order to reduce the equipment cost, manufacturers in recent years increase the capacity of the equipment by increasing the carrying capacity of the carrier to achieve the purpose of reducing the cost. For example, as shown in fig. 2, the area of the carrier plate is increased by adopting a structure in which a plurality of graphite boats 01 are stacked, wherein the graphite boats 01 are used as electrode plates for carrying the carrier plate, and plasmas are generated between adjacent electrode plates, so that the equipment productivity is greatly increased without increasing the occupied area. Specifically, the graphite boat 01 includes an upper electrode plate 011, a lower electrode plate 012, and an inter-plate connecting bar 013, the upper electrode plate 011 and the lower electrode plate 012 are disposed at an interval, and support and fixation are achieved by the inter-plate connecting bar 013. The heater of the HJT-PECVD apparatus of the related art has a lead part, so that radio frequency may leak out through the lead part, thereby adversely affecting the process. Disclosure of Invention The embodiment of the application aims to provide semiconductor process equipment which can solve the problems of radio frequency leakage and the like. In order to solve the technical problems, the application is realized as follows: the embodiment of the application provides semiconductor process equipment, which comprises a bearing boat and a radio frequency isolation device; the bearing boat comprises a plurality of heating plates which are respectively used as radio frequency electrode plates or grounding electrode plates, wherein the heating plates are provided with heating pieces, one ends of the heating pieces are led out relative to the heating plates, and the heating pieces comprise metal sleeves; The radio frequency isolation device comprises a first isolation component, wherein the first isolation component comprises an isolation ring, and the isolation ring is connected with the metal sleeve and used for blocking radio frequency signals in the heating plate from being transmitted out through the metal sleeve. In the embodiment of the application, the isolating ring is connected with the metal sleeve of the heating element, so that the isolating ring can isolate the radio frequency signals transmitted to the metal sleeve by the heating plate, thereby effectively reducing the risk of leakage of the radio frequency signals on the heating plate from the metal sleeve and ensuring normal release of radio frequency power. Drawings FIG. 1 is a schematic diagram of a chain PECVD apparatus of the related art; FIG. 2 is a schematic view of a structure of a multi-layered graphite boat according to the related art; FIG. 3 is a schematic view of a heater in the related art; FIG. 4 is a schematic view of a carrier boat according to an embodiment of the present application; FIG. 5is a schematic diagram of a cross section of a heating plate disclosed in an embodiment of the application; FIG. 6 is a schematic view of a longitudinal section of a heating plate disclosed in an embodiment of the application; FIG. 7 is a schematic view in longitudinal section of another form of heating plate disclosed in an embodiment of the application; FIG. 8 is a schematic view of a heating plate with expansion holes and limiting holes according to an embodiment of the present application; FIG. 9 is a schematic diagram of a grounding electrode plate according to an embodiment of the present application; FIG. 10 is a schematic diagram of a RF electrode plate according to an embodiment of the present application; FIG. 11