CN-119720516-B - SiC power device on-orbit single particle hard error risk prediction method

CN119720516BCN 119720516 BCN119720516 BCN 119720516BCN-119720516-B

Abstract

The invention discloses an on-orbit single-particle hard error probability prediction method for a SiC power device, which relates to the technical field of radiation resistance guarantee for space application of the power device, is based on a ground radiation test and a Weibull data statistics rule, combines simulation software to simulate a space radiation environment, can estimate the probability of single-particle hard error occurrence in the space of the SiC device in-orbit application at low cost, has lower realization difficulty, reduces the cost of an on-orbit task of a spacecraft, enhances the reliability in the on-orbit period, ensures the safety of on-orbit flight, belongs to the technical field of radiation resistance guarantee for space application of the power device, has high economic value, and has important significance in promoting the development of novel space power supplies.

Inventors

XUE YUXIONG
WU DI
XU HAOYANG
CAO RONGXING
YU QINGKUI
MEI BO
SUN YI

Assignees

扬州大学

Dates

Publication Date: 20260508
Application Date: 20241204

Claims (4)

1. The method for estimating the probability of the on-orbit single particle hard error risk of the SiC power device is characterized by comprising the following steps of: Step one, carrying out single particle hard error irradiation test on a SiC power device, and monitoring the relation between drain electrode or grid electrode current and fluence in real time in the irradiation process to obtain Curve data of the relation between the strip drain or gate current and the fluence; screening out single event effect failure fluence data when the single event burnout and single event gate penetration phenomenon occur in the SiC power device from the curve data; Step three, carrying out Weibull data statistics on the single event effect failure fluence data to obtain a single event failure fluence Weibull statistical distribution diagram of the SiC power device, carrying out linear fitting according to the single event failure fluence Weibull statistical distribution diagram, and obtaining Weibull shape parameters by using fitting slope and intercept And scale parameter ; Step four, based on Weibull shape parameters And scale parameter Obtaining average failure fluence data at a single linear energy transfer LET ; Step five, average failure fluence data under single LET Taking the reciprocal to obtain a failure section; repeating single particle hard error irradiation test on other SiC power devices of the same model until obtaining failure sections under different LETs , , For the number of LET, one LET is corresponding to one single particle hard error irradiation test, Is the first Failure cross-sections at the individual LETs, And to failure section Fitting to obtain failure cross-section function ; Step six, for failure cross section function Multiplied by Processing to obtain failure cross-section functions at different incidence angles , The included angle between the incident path of the particle and the incident path of the particle perpendicular to the SiC power device is determined according to Full space integration is carried out on the failure section formula to obtain an average failure section ; Inputting orbit data of a spacecraft by using space radiation environment software, and adding an environment model, wherein the environment model comprises solar particles, geomagnetic capture particles and Galaxy cosmic ray particles, so as to obtain differential flux energy spectrum data of the space radiation environment in a spacecraft cabin ; Step eight, according to the average failure section And Calculating the incidence rate of on-orbit single particle hard errors 。
2. The method for estimating the probability of on-orbit single-particle hard error risk of a SiC power device according to claim 1, wherein the test method adopted by the single-particle hard error irradiation test in the step one is based on the single-particle burnout and single-particle gate penetration test described by 1080 methods in the American standard MIL-STD-750.
3. The method for estimating the probability of on-orbit single particle hard error risk of the SiC power device according to claim 1, wherein the second step is specifically as follows: step 201, setting reference current Obtaining all the data greater than the reference current from each curve data in the first step Then the slope of the screened data points is obtained, and the maximum slope is selected from the slopes Obtaining the corresponding fluence data of the maximum slope; Step 202, repeating step 201 to obtain Single event effect failure fluence data for strip drain or gate current variation curves , , Is the first Single event effect failure fluence data for a bar drain or gate current variation curve, 。
4. The method for estimating the probability of on-orbit single particle hard error of the SiC power device according to claim 1, wherein the thickness of the shielding layer of the spacecraft is 3 mm.

Description

SiC power device on-orbit single particle hard error risk prediction method Technical Field The invention relates to the technical field of radiation-resistant guarantee of power device space application, in particular to an on-orbit single particle hard error risk prediction method for a SiC power device. Background Silicon carbide (SiC) is used as a third-generation semiconductor material, and compared with silicon (Si) material, has superior electrical and thermal properties such as large heat conductivity, high breakdown field strength, high electron saturation rate, high radiation resistance and the like, and the excellent properties make the silicon carbide (SiC) expected to be the first-choice high-voltage power device material in an aerospace system circuit. Therefore, in the field of aerospace, power SiC devices may gradually replace silicon-based power devices with more desirable performance advantages, and future potential applications in power electronics systems in satellites, aircraft, detectors, and space. However, a space radiation environment consisting of the earth radiation band, the Galaxy cosmic ray and the solar cosmic ray has a large amount of high-energy particles, and the high-energy space particles in the space radiation environment can cause devices in the space equipment to generate radiation effects, wherein the radiation effects are mainly divided into a total dose effect, a displacement effect and a single particle effect. The single event effect is light, so that the reliability is reduced due to electric leakage of a circuit system, and the device cannot work due to hard error fault caused by heavy event, so that the normal work of the aerospace equipment is seriously threatened. The power SiC device has stronger total dose resistance, but is more sensitive to a single event effect when working in a high-voltage state, and the device is easy to generate Single Event Burnout (SEB) and single event gate breakdown (SEGR). Therefore, a single event effect test needs to be carried out, however, the ground simulation test can only obtain the phenomena of single event burnout and single event gate breakdown, and the on-orbit radiation environment and the single event risk cannot be accurately reflected. In the prior art, the problem that the probability of single particle hard error is difficult to accurately estimate when a power SiC device is applied in space is solved. Disclosure of Invention The invention aims to solve the technical problem of overcoming the defects of the prior art and providing a method for estimating the probability of on-orbit single particle hard error risk of a SiC power device, which is based on a ground heavy ion irradiation test, combines the existing space radiation environment simulation software and the statistics rule of the failure section data of the device, the number of single particle hard errors of the power SiC device in the unit time is accurately predicted, and the reliability evaluation problem of single particle effect caused by heavy ion irradiation when the power SiC device in the prior art runs in the track is solved. The invention adopts the following technical scheme for solving the technical problems: the invention provides an on-orbit single particle hard error risk prediction method for a SiC power device, which comprises the following steps: Step one, carrying out single particle hard error irradiation test on a SiC power device, and monitoring the relation between drain electrode or grid electrode current and fluence in real time in the irradiation process to obtain Curve data of the relation between the strip drain or gate current and the fluence; screening out single event effect failure fluence data when the single event burnout and single event grid penetration phenomenon occur in the SiC power device from the curve data; Step three, carrying out Weibull data statistics on the single event effect failure fluence data to obtain a single event failure fluence Weibull statistical distribution diagram of the SiC power device, carrying out linear fitting according to the single event failure fluence Weibull statistical distribution diagram, and obtaining Weibull shape parameters by using fitting slope and intercept And scale parameter; Step four, based on Weibull shape parametersAnd scale parameterObtaining average failure fluence data at a single linear energy transfer LET; Step five, average failure fluence data under single LETTaking the reciprocal to obtain a failure section; repeating single particle hard error irradiation test on other SiC power devices of the same model until obtaining failure sections under different LETs ,,For the number of LET, one LET is corresponding to one single particle hard error irradiation test,Is the firstFailure cross-sections at the individual LETs,And to failure sectionFitting to obtain failure cross-section function; Step six, for failure cross section functionMultiplied byProcessing to ob