CN-119800271-B - Manufacturing process of aluminum-titanium melt-jetting composite coating applied to cavity of semiconductor device

Abstract

The invention belongs to the technical field of thermal spraying, and in particular relates to a manufacturing process of an aluminum-titanium smelting-spraying composite coating applied to a cavity of semiconductor equipment, which comprises the following steps of (1) carrying out sand blasting on the cavity of the semiconductor equipment by using a white corundum sand material; the method comprises the steps of (1) removing residual sand materials, cleaning, drying to obtain a pretreated semiconductor equipment cavity, (3) using supersonic flame to spray aluminum wires on the surface of the pretreated semiconductor equipment cavity to obtain an aluminum spray coating, (4) using the supersonic flame to spray titanium wires on the surface of the aluminum spray coating to obtain a titanium spray coating, cleaning, drying and vacuum heat treatment. The composite coating prepared by the method has the advantages of meeting the requirements on roughness, higher meltallizing binding force, difficult falling of the coating, low porosity and more compact coating.

Inventors

• XUE HONGYU
• YAN WANGXUE
• Gui Chuanshu
• LI WEIDONG
• Jin Puyun
• ZHANG MU
• GONG WENKAI
• ZHU WENJIAN
• XU YUHONG
• XU YANG
• LU QI

Assignees

• 江苏凯威特斯半导体科技有限公司

Dates

Publication Date

20260508

Application Date

20241217

Claims (6)

1. 1. The aluminum-titanium smelting-spraying composite coating manufacturing process for the cavity of the semiconductor device is characterized by comprising the following steps of: (1) Sand blasting is carried out on the cavity of the semiconductor device by using a white corundum sand material; (2) Firstly, washing with high pressure water to remove residual sand materials, then carrying out ultrasonic cleaning, and finally, drying with nitrogen and drying in an oven to obtain a pretreated semiconductor equipment cavity; (3) Using supersonic flame to spray aluminium wire on the surface of the pretreated semiconductor equipment cavity to obtain aluminium spray coating, wherein the supersonic flame spray condition is that the current is 180-200A, the voltage is 25-30V, the spray distance is 150-180mm, the compressed air pressure is 40-50psi, and the thickness of the aluminium spray coating is 50+ -20 μm; (4) Using supersonic flame to melt titanium wire on the surface of the aluminum melt-shot coating to obtain the titanium melt-shot coating, and carrying out cleaning, drying and vacuum heat treatment on the titanium melt-shot coating under the vacuum heat treatment conditions of 4-6mtorr of vacuum degree, 260-270 ℃ at first, 1-2h of heat preservation, 230-240 ℃ at 3-4h of heat preservation, and finally 200-210 ℃ at the temperature for 1-2h of heat preservation time, and cooling along with a furnace to obtain the aluminum titanium melt-shot composite coating applied to the cavity of the semiconductor device; The supersonic flame-jetting condition is that the current is 180-200A, the voltage is 25-30V, the jetting distance is 150-180mm, the compressed air pressure is 40-50psi, the thickness of the titanium-jetting coating is 100+ -30 μm; The ratio of the thickness of the aluminum melt-blown coating to the thickness of the titanium melt-blown coating is 1 (1.6-2.4).
2. 2. The aluminum-titanium smelting-spraying composite coating manufacturing process applied to the cavity of the semiconductor device according to claim 1, wherein the step (1) is characterized in that white corundum sand materials with the mesh number of 20-30# are used for blasting the cavity of the semiconductor device.
3. 3. The process for preparing the aluminum-titanium smelting-spraying composite coating applied to the cavity of the semiconductor device according to claim 1, wherein the sand blasting pressure in the step (1) is 0.3-0.5Mpa, and the sand blasting distance is 160-180mm.
4. 4. The process for preparing aluminum-titanium meltallizing composite coating for semiconductor device cavity according to claim 1, wherein the high pressure water washing in step (2) uses resistivity of 6-8mΩ Cm deionized water, the water pressure is 70-80bar.
5. 5. The process for preparing aluminum-titanium meltallizing composite coating applied to semiconductor device cavity as defined in claim 1, wherein in said step (2), ultrasonic cleaning uses resistivity of 6-8mΩ Cm deionized water, ultrasonic intensity is 8-10W/inch 2 .
6. 6. The process for preparing the aluminum-titanium meltallizing composite coating applied to the cavity of the semiconductor device according to claim 1, wherein the drying time in the step (2) is 2-3h, and the drying temperature is 145-155 ℃.

Description

Manufacturing process of aluminum-titanium melt-jetting composite coating applied to cavity of semiconductor device Technical Field The invention belongs to the technical field of meltallizing, and particularly relates to a manufacturing process of an aluminum-titanium meltallizing composite coating applied to a cavity of semiconductor equipment. Background In semiconductor fabrication, physical Vapor Deposition (PVD) is a critical process for forming thin films of metals, nitrides, etc. on silicon wafers or glass substrates. However, during this process, not only the target substrate will deposit the required thin films, but the internal components of the PVD chamber will inevitably adsorb to these materials. In order to enhance the adhesion of these semiconductor device cavities to deposited films, prevent film spalling (peeling), and reduce the generation of particles (particles) within the cavities, thereby extending the service life of the semiconductor device cavities and improving the operating efficiency of the devices, currently common methods include sand blasting and arc-melting to increase the roughness of the surfaces of the semiconductor device cavities. ARC spraying is a surface thermal spraying treatment technology, in which droplets of a molten spray coating are sprayed by air flow on the surface of a substrate subjected to a series of pretreatment such as sand blasting and cleaning, and a relatively uniform and rough coating is covered on the surface of the substrate by using the mechanical bonding force of cooling and spreading of the coating. The fusion-jet coating applied to the cavity of the semiconductor device still faces some challenges, especially in the aspects of three key performance indexes of roughness, binding force and porosity, namely 1. Roughness, in the fusion-jet process, the surface roughness of the coating is possibly uneven due to the changes of factors such as jet angle, speed, temperature and the like, and the situation of local overhigh or overlow occurs. It is difficult to precisely control the size and distribution of the fused shot particles, so that the microstructure of the coating surface is not ideal enough, and the smoothness and flatness thereof are affected. Rough surfaces tend to accumulate residues during processing, increasing the production of particles (particles), which is extremely detrimental to the semiconductor manufacturing environment and may lead to increased product defect rates. Too rough a surface may result in insufficient adhesion of the deposited film and increased risk of flaking of the film. 2. Bonding force, during the meltblowing process, if the surface of the substrate is improperly treated or the meltblowing parameters are not proper, interface defects such as voids, cracks, etc. may be formed between the coating and the substrate, and these defects may weaken the bonding force. Thermal stresses can occur during heating and cooling due to the different coefficients of thermal expansion of the substrate material and the coating material, which can lead to cracking or peeling of the coating. The coating can be gradually peeled off in the use process due to insufficient binding force, the service life of the coating is shortened, frequent maintenance and replacement are required, and the production cost is increased. The falling of the coating can affect the corrosion resistance and the wear resistance of the cavity, thereby reducing the overall performance and the reliability of the equipment. 3. Porosity, if the fused particles are not sufficiently fused during the fusion process, or if air is introduced during the spraying process, more pores may be formed inside the coating. The pores are unevenly distributed, namely, the size and the distribution of the pores are uneven and may be concentrated in certain areas to form weak points, so that the overall performance of the coating is affected. The pores provide a path for the corrosive medium to penetrate, reducing the corrosion resistance of the coating, particularly when exposed to chemicals during semiconductor fabrication. High porosity weakens the mechanical strength of the coating, making it more susceptible to damage under high temperature, high pressure or mechanical stress. The prior art mainly uses finer surface cleaning and pretreatment technologies, such as laser cleaning, chemical etching and the like, to ensure the surface of the substrate to be clean and have proper roughness so as to enhance the bonding force of the coating. The porosity of the coating still does not meet the customer's needs. And Therefore, a process for preparing aluminum-titanium melt-shot composite coating applied to the cavity of semiconductor equipment is needed. Disclosure of Invention The invention aims to provide a manufacturing process of an aluminum-titanium melt-injection composite coating applied to a cavity of semiconductor equipment. In order to achieve the above object, the present in