CN-119843229-B - Preparation method of high-entropy alloy film with adjustable components and crystalline phase

Abstract

The invention discloses a preparation method of a high-entropy alloy film with adjustable components and crystalline phases, which comprises the steps of 1, cutting a Si wafer into square pieces, 2, opening a magnetron sputtering system, installing FeCoNi ternary equal atomic ratio alloy targets on a No.1 target, installing Mo metal targets on a No. 2 target, installing Cu metal targets on a No. 3 target, starting a cooling water system, placing the square pieces in the center of a sample disc, placing the square pieces into a cavity of a vacuum chamber, and finally vacuumizing, 3, opening a vacuum indicator, controlling the rotating speed of a sample table to be 5r/min, introducing pure Ar gas as sputtering gas, controlling the flow of the Ar gas to keep the vacuum degree, 4, setting sputtering power and sputtering time, opening a target baffle, and starting sputtering to obtain the high-entropy alloy film. The component and the preparation method of the high-entropy alloy film with adjustable crystal phase solve the problem that the crystal phase structure and the composition components of the existing high-entropy alloy film are not easy to control.

Inventors

• ZHAO ZHIMING
• LI YING
• Yan Fuxue
• ZHANG GUOJUN
• Yang Zhuoping

Assignees

• 西安理工大学

Dates

Publication Date

20260512

Application Date

20241021

Claims (3)

1. 1. The preparation method of the high-entropy alloy film with adjustable components and crystalline phases is characterized by comprising the following steps: Step1, cutting an Si wafer into square pieces; Step 2, opening a magnetron sputtering system, mounting FeCoNi ternary equal atomic ratio alloy targets at a target position 1, mounting Mo metal targets at a target position 2, mounting Cu metal targets at a target position 3, starting a cooling water system, placing a square sheet at the center of a sample disc, placing the square sheet in a cavity of a vacuum chamber, and finally vacuumizing; Step 3, opening a vacuum indicator, controlling the rotating speed of the sample stage to be 5r/min, introducing pure Ar gas as sputtering gas, and controlling the flow rate of the Ar gas to keep the vacuum degree; Step 4, setting sputtering power and sputtering time, opening a target baffle, and starting sputtering to obtain a high-entropy alloy film; In the step 1, cutting a Si wafer with the diameter of 100mm into square pieces with the diameter of 10mm multiplied by 10mm, and respectively carrying out deionized water cleaning treatment, acetone cleaning treatment and ultrasonic cleaning treatment of absolute ethyl alcohol on the square pieces; In the step 2, the temperature of cooling water in a cooling water system is set to be 17.5-18.5 ℃, and vacuum is pumped to 2X 10 -2 Pa -5×10 -2 Pa; in the above step 3, the vacuum degree was maintained at 5X 10 -2 Pa.
2. 2. The method for preparing the high-entropy alloy film with adjustable components and crystalline phases according to claim 1, wherein in the step 2, a Mo metal target is installed at a target position No.2, and a Cr metal target is installed at a target position No. 3.
3. 3. The method for preparing the high-entropy alloy film with adjustable components and crystalline phases according to claim 1, wherein in the step 2, a Cr metal target is installed on a No.2 target, and a Cu metal target is installed on a No.3 target.

Description

Preparation method of high-entropy alloy film with adjustable components and crystalline phase Technical Field The invention belongs to the technical field of high-performance alloy materials, and particularly relates to a preparation method of a high-entropy alloy film with adjustable components and crystalline phases. Background With the continuous progress of society, the rapid development of the technology level, the demand of China and even the world economic development for high-performance alloy materials is increasing, the traditional alloy, namely a single principal element alloy material, cannot meet the higher performance requirements in various industry fields, such as aerospace, new energy, national defense and military and the like, so that the preparation of a plurality of excellent high-performance alloy materials becomes a research hotspot. Under the background, the high-entropy alloy (High Entropy Alloys) is an alloy material, and is widely researched and focused on the global scope due to the breakthrough design concept and unique physical, chemical and mechanical properties. High entropy alloys combine the excellent properties of a variety of elements, such as good mechanical properties, corrosion resistance and possibly magnetic properties. High entropy alloys generally contain a variety of (5-13) primary elements, have a simple crystalline structure, tend to form a single solid solution crystalline phase, and can produce unusual mechanical properties. The chemical disorder is introduced by mixing a plurality of main elements, and unlike the traditional alloy, the high-entropy alloy has no dominant element or principal element, is a novel alloy material and has unique structural and performance characteristics. The high-entropy alloy has excellent mechanical property, corrosion resistance and high-temperature property, and can be applied to extreme environments such as high temperature, high pressure, corrosive liquid and the like due to the excellent comprehensive properties, so that the service time of a workpiece can be prolonged. In recent years, research on high-entropy alloy films has made a lot of breakthrough progress, including preparation of novel high-entropy alloy films, improvement of synthesis methods, optimization of performances and the like. But the crystal phase structure and the composition of the existing high-entropy alloy film are not easy to control, expensive instruments and equipment are needed, and the production cost is high. Disclosure of Invention The invention aims to provide a preparation method of a high-entropy alloy film with adjustable components and crystalline phases, which solves the problems that the crystalline phase structure and the composition components of the existing high-entropy alloy film are not easy to control, expensive instruments and equipment are needed, and the production cost is high. In order to achieve the aim, the technical scheme adopted by the invention is that the preparation method of the high-entropy alloy film with adjustable components and crystalline phases is implemented according to the following steps: Step1, cutting an Si wafer into square pieces; Step 2, opening a magnetron sputtering system, mounting FeCoNi ternary equal atomic ratio alloy targets at a target position 1, mounting Mo metal targets at a target position 2, mounting Cu metal targets at a target position 3, starting a cooling water system, placing a square sheet at the center of a sample disc, placing the square sheet in a cavity of a vacuum chamber, and finally vacuumizing; Step 3, opening a vacuum indicator, controlling the rotating speed of the sample stage to be 5r/min, introducing pure Ar gas as sputtering gas, and controlling the flow rate of the Ar gas to keep the vacuum degree; and 4, setting sputtering power and sputtering time, opening a target baffle, and starting sputtering to obtain the high-entropy alloy film. In the preferred embodiment of the present invention, in the step 1, the Si wafer having a diameter of 100mm is cut into square pieces of 10mm×10 mm. In the step 1, deionized water cleaning, acetone cleaning and absolute ethyl alcohol ultrasonic cleaning are performed on the wafer, respectively. As a preferred embodiment of the present invention, in the step 1, the temperature of the cooling water in the cooling water system is set to 17.5 ℃ to 18.5 ℃. As a preferred embodiment of the present invention, in the step 2, a vacuum is applied to 2×10 -2Pa -5×10-2 Pa. As a preferable embodiment of the present invention, in the step 2, the vacuum degree is maintained at 5×10 -2 Pa. In the step 2, a Mo metal target is mounted on the No. 2 target, and a Cr metal target is mounted on the No. 3 target. In the step 2, a Cr metal target is mounted on the No. 2 target, and a Cu metal target is mounted on the No. 3 target. The preparation method of the high-entropy alloy film with adjustable components and crystalline phases has the beneficial effe