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CN-119866172-B - Hafnium-based ferroelectric device and performance control method thereof

CN119866172BCN 119866172 BCN119866172 BCN 119866172BCN-119866172-B

Abstract

The present disclosure provides a hafnium-based ferroelectric device and a performance control method thereof, which can be applied to the technical field of ferroelectric film modification. The device includes a substrate layer, a bottom electrode layer on the substrate layer, a hafnium-based ferroelectric film on the bottom electrode layer, wherein a coercive electric field strength parameter of the hafnium-based ferroelectric film is improved by particle beam irradiation, and a top electrode layer on the hafnium-based ferroelectric film. The performance regulating method comprises the steps of depositing a bottom electrode layer on a substrate layer, depositing a hafnium-based ferroelectric film on the bottom electrode layer, depositing a top electrode layer on the hafnium-based ferroelectric film to obtain an intermediate device, performing rapid annealing on the intermediate device to obtain a hafnium-based ferroelectric device, and regulating coercive electric field strength parameters of the hafnium-based ferroelectric film in the hafnium-based ferroelectric device by using particle beams to obtain the target hafnium-based ferroelectric device after performance regulation.

Inventors

  • LI BO
  • MA HAILI
  • LU PI
  • WANG LEI
  • ZHANG DONG
  • HU ZHENGTAO

Assignees

  • 中国科学院微电子研究所

Dates

Publication Date
20260505
Application Date
20250107

Claims (7)

  1. 1. A hafnium-based ferroelectric device modified with irradiation particles, comprising: A substrate layer; a bottom electrode layer on the substrate layer; A hafnium-based ferroelectric film on the bottom electrode layer, wherein a coercive electric field strength parameter of the hafnium-based ferroelectric film is improved by particle beam irradiation adjustment, wherein the particle beam is used for cooperatively generating a t-phase structure in the hafnium-based ferroelectric film based on an ionizing radiation effect and a shift radiation effect to reduce the coercive electric field strength parameter, the coercive electric field strength parameter comprises 1.30 MV/cm, and A top electrode layer on the hafnium-based ferroelectric thin film, wherein the particle beam irradiates the hafnium-based ferroelectric thin film while passing through the top electrode layer; the particle beam comprises a proton beam, wherein the irradiation energy range of the proton beam is 1X 10 -1 keV-1X 50MeV, and the particle fluence rate range of the proton beam is 1X 10 7 p/cm 2 /s~1×10 16 p/cm 2 /s.
  2. 2. The hafnium-based ferroelectric device according to claim 1, wherein, The material of the hafnium-based ferroelectric film comprises one of HfO 2 doped with Zr, hfO 2 doped with La, hfO 2 doped with Al, hfO 2 doped with Si and HfO 2 doped with Y, and The thickness range of the hafnium-based ferroelectric film is 5 nm-50 nm.
  3. 3. The hafnium-based ferroelectric device according to claim 1, wherein, The material of the bottom electrode layer comprises at least one of titanium nitride, tungsten, gold and ruthenium; the thickness range of the bottom electrode layer is 30 nm-100 nm; The material of the top electrode layer comprises at least one of titanium nitride, tungsten, gold and ruthenium; the top electrode layer has a thickness ranging from 20 nm to 40 nm, and The material of the substrate layer comprises doped silicon.
  4. 4. A method of performance tuning of a hafnium-based ferroelectric device, comprising: Depositing a bottom electrode layer on the substrate layer; depositing a hafnium-based ferroelectric thin film on the bottom electrode layer; Depositing a top electrode layer on the hafnium-based ferroelectric thin film to obtain an intermediate device, and Carrying out rapid annealing on the intermediate device to obtain a hafnium-based ferroelectric device; Irradiating the hafnium-based ferroelectric device by using a particle beam to generate a t-phase structure in the hafnium-based ferroelectric film in a synergic manner based on an ionization radiation effect and a displacement radiation effect, so as to reduce the coercive electric field intensity parameter of the hafnium-based ferroelectric film in the hafnium-based ferroelectric device, thereby obtaining a target hafnium-based ferroelectric device with regulated performance, wherein the coercive electric field intensity parameter comprises 1.30 MV/cm; Wherein the particle beam comprises a proton beam; The irradiation energy range of the proton beam is 1 multiplied by 10 -1 keV to 1 multiplied by 50MeV; The particle fluence rate of the proton beam is in the range of 1X 10 7 p/cm 2 /s~1×10 16 p/cm 2 /s.
  5. 5. The method of claim 4, wherein the adjusting the coercive electric field strength parameter of the hafnium-based ferroelectric thin film in the hafnium-based ferroelectric device by irradiating the hafnium-based ferroelectric device with a particle beam to obtain the performance-adjusted target hafnium-based ferroelectric device comprises: The coercive electric field strength parameter is adjusted by irradiating the hafnium-based ferroelectric device with a particle beam to adjust a charge state of intrinsic oxygen vacancies and an oxygen vacancy concentration in the hafnium-based ferroelectric thin film.
  6. 6. The method of claim 4, wherein the particle beam has an irradiation angle in the range of 5 ° to 90 °.
  7. 7. The method of claim 4, wherein said rapid annealing of said intermediate device results in a hafnium-based ferroelectric device comprising: and (3) carrying out rapid annealing on the intermediate device, wherein the annealing time ranges from 10 s ℃ to 60 s, and the heating temperature ranges from 300 ℃ to 700 ℃.

Description

Hafnium-based ferroelectric device and performance control method thereof Technical Field The present disclosure relates to the field of ferroelectric thin films, and more particularly, to a hafnium-based ferroelectric device and a performance adjustment and control method thereof. Background The memory is one of three main pillars in the semiconductor industry, and the hafnium-based ferroelectric material becomes one of key alternative materials of the next generation novel ferroelectric memory by virtue of the advantages of high semiconductor process compatibility, mature preparation process and the like, thereby bringing new opportunities for the development of ferroelectric memory technology. In the course of implementing the disclosed concept, the inventors found that there are reliability problems in the related art such as poor cycle durability of hafnium-based ferroelectric thin film materials and devices. Disclosure of Invention In view of the above, the present disclosure provides a hafnium-based ferroelectric device and a performance adjustment method thereof. One aspect of the present disclosure provides a hafnium-based ferroelectric device and a performance adjustment method thereof, including a substrate layer, a bottom electrode layer on the substrate layer, a hafnium-based ferroelectric thin film on the bottom electrode layer, wherein a coercive electric field strength parameter of the hafnium-based ferroelectric thin film is improved by particle beam irradiation adjustment, and a top electrode layer on the hafnium-based ferroelectric thin film. According to the embodiment of the disclosure, the material of the hafnium-based ferroelectric film comprises one of HfO 2 doped with Zr, hfO 2 doped with La, hfO 2 doped with Al, hfO 2 doped with Si and HfO 2 doped with Y, and the thickness of the target hafnium-based ferroelectric film ranges from 5nm to 50 nm. According to the embodiment of the disclosure, the material of the bottom electrode layer comprises at least one of titanium nitride, tungsten, gold and ruthenium, the thickness of the bottom electrode layer ranges from 30 nm to 100 nm, the material of the top electrode layer comprises at least one of titanium nitride, tungsten, gold and ruthenium, the thickness of the top electrode layer ranges from 20 nm to 40 nm, and the material of the substrate layer comprises doped silicon. Another aspect of the present disclosure provides a method of performance tuning of a hafnium-based ferroelectric device, comprising depositing a bottom electrode layer on a substrate layer, depositing a hafnium-based ferroelectric film on the bottom electrode layer, depositing a top electrode layer on the hafnium-based ferroelectric film to obtain an intermediate device, and performing a heat treatment on the intermediate device to obtain a hafnium-based ferroelectric device, and tuning coercive electric field strength parameters of the hafnium-based ferroelectric film in the hafnium-based ferroelectric device by irradiating the hafnium-based ferroelectric device with a particle beam to obtain a target hafnium-based ferroelectric device after tuning of performance. According to the embodiment of the disclosure, the hafnium-based ferroelectric device is obtained by irradiating the hafnium-based ferroelectric device with particle beams to adjust the coercive electric field strength parameters of the hafnium-based ferroelectric film in the hafnium-based ferroelectric device, and the hafnium-based ferroelectric device with controlled performance is obtained by irradiating the hafnium-based ferroelectric device with particle beams to adjust the charge state and oxygen vacancy concentration of intrinsic oxygen vacancies in the hafnium-based ferroelectric film, thereby adjusting the coercive electric field strength parameters. According to an embodiment of the present disclosure, the particle beam is one of a neutron beam, a proton beam, a He 2+ ion beam, an electron beam, and 60 Co gamma rays. According to the embodiment of the disclosure, the irradiation energy range of the neutron beam is 1×10 -7 MeV~1×102 MeV, the irradiation energy range of the proton beam is 1×10 -1 keV ~1×50 MeV, the ion dose range of the electron beam is 1×10 -1 keV~10 MeV;60 Co gamma rays and is 1 Gy-1×10 5 Gy;He2+, and the irradiation energy range of the ion beam is 10 keV-1 MeV. According to the embodiment of the disclosure, the particle fluence rate of the neutron beam is in the range of 1×10 5 n/cm2/s~1×1014 n/cm2/s, the particle fluence rate of the proton beam is in the range of 1×10 7 p/cm2/s~1×1016 p/cm2/s, the fluence rate of the electron beam is in the range of 1×10 7 p/cm2/s ~1×1016 p/cm2/s; 60 Co gamma rays, and the fluence rate of the ion beam is in the range of 1×10 5 p/cm2/s~1×1015 p/cm2/s;He2+ ion beams is in the range of 1×10 8 ions/cm2/s ~1×1015 ions/cm2/s. According to the embodiment of the disclosure, the irradiation angle of the particle beam ranges from 5 ° to 90 °. Accordin