CN-119912255-B - Cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material and preparation method thereof

Abstract

The invention discloses a cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material and a preparation method thereof, and relates to the technical field of high-temperature piezoelectric ceramic materials. The cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material comprises 0.5-10% of cerium and chromium and 67-99.6% of bismuth titanate, wherein the chemical formula of the composition of the material is Bi 4‑x Ce x Ti 2.98 Cr 0.02 O 12 . According to the invention, bi 4 Ti 3 O 12 is taken as a matrix, ce 4+ /Cr 3+ is introduced, the piezoelectric ceramic with high Curie temperature and good temperature stability is successfully prepared, and meanwhile, excellent piezoelectric performance (d 33 -19.5 pC/N) is obtained through component regulation and process optimization, so that the further development of the high-temperature piezoelectric ceramic is promoted.

Inventors

• YAN CHANGSHENG
• BAI RUOCHEN
• XU GUANGYE
• MAO DONGYAN
• WANG YUANLONG
• ZOU FEI
• MA SEN
• YANG JIAN
• MA LIANG
• WANG YAN
• LI MUTIAN
• ZHANG ZHENYU

Assignees

• 中国船舶集团有限公司第七〇三研究所

Dates

Publication Date

20260508

Application Date

20241230

Claims (10)

1. 1. The cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material is characterized by comprising 0.5-10% of cerium and chromium by total weight and 67-99.6% of bismuth titanate by total weight, wherein the chemical formula of the composition of the material is as follows: Bi 4-x Ce x Ti 2.98 Cr 0.02 O 12 。
2. 2. The cerium chromium-bismuth titanate based high temperature piezoelectric ceramic material according to claim 1, wherein x in the chemical formula of the composition further comprises any one of the following values: wherein x is 0.005-0.015.
3. 3. A preparation method of a cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material, which is applied to the cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material according to any one of claims 1 to 2, and is characterized by comprising the following specific steps: s1, weighing raw materials according to a Bi 4-x Ce x Ti 2.98 Cr 0.02 O 12 metering ratio, mixing, ball milling for 12-24 hours, drying in an oven at 80-100 ℃ for 10-14 hours, and calcining in a muffle furnace to obtain Bi 4-x Ce x Ti 2.98 Cr 0.02 O 12 ; s2, mixing Bi 4-x Ce x Ti 2.98 Cr 0.02 O 12 obtained in the step S1, ball milling for 12-24 hours, and drying in an oven at 80-100 ℃ for 10-14 hours to obtain powder; S3, adding a polyvinyl alcohol aqueous solution into the powder obtained in the step S2, grinding, pressing into a green body under the pressure of 10 MPa, and maintaining the pressure for 1-2 min to obtain the green body; and S4, placing the blank obtained in the step S3 in a muffle furnace, discharging glue, placing in an isostatic press, carrying out isostatic pressing, placing in a closed crucible, burying powder in the powder prepared in the step S2, and sintering to obtain the cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material.
4. 4. The method for preparing a cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material according to claim 3, wherein the raw material in S1 comprises Bi 2 O 3 、TiO 2 、CeO 2 、Cr 2 O 3 .
5. 5. The preparation method of the cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material is characterized in that the mass ratio of powder, grinding balls and alcohol in S1 and S2 is 1-1.5:2:1.5-1.8, and the rotating speed of a ball mill is 300 r/min.
6. 6. The preparation method of the cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material is characterized in that the temperature rise rate of calcination in the step S1 is 3-5 ℃ per minute, the calcination temperature is 800-850 ℃, and the temperature is kept for 4-5 hours.
7. 7. The preparation method of the cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material is characterized in that the mass concentration of the polyvinyl alcohol aqueous solution in the S3 is 5-10wt%.
8. 8. The preparation method of the cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material is characterized in that the temperature rise rate of glue discharging in the step S4 is 1-5 ℃ per minute, the glue discharging temperature is 600 ℃, and the temperature is kept for 2-4 hours.
9. 9. The method for preparing the cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material according to claim 3, wherein the isostatic pressure in the step S4 is 100-120 MPa, and the dwell time is 30 min.
10. 10. The preparation method of the cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material is characterized in that the temperature rise rate of sintering in the step S4 is 5 ℃ per minute, the sintering temperature is 1060-1120 ℃, and the temperature is kept for 2-3 hours.

Description

Cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material and preparation method thereof Technical Field The invention relates to the technical field of high-temperature piezoelectric ceramic materials, in particular to a cerium-chromium-bismuth titanate-based high-temperature piezoelectric ceramic material and a preparation method thereof. Background Piezoelectric ceramics, which are a functional material capable of converting mechanical energy and electrical energy into each other, have been widely used in various industrial fields, however, fields of military industry, smelting, geological exploration, aerospace, nuclear energy, etc. require piezoelectric materials having high curie temperatures because they require vibration monitoring and health management of critical equipment under severe environments such as high temperature, high irradiation, complex vibration, etc. The curie temperature point (T c) is a critical point at which the ferroelectric is converted into paraelectric, and the spontaneous polarization of the piezoelectric ceramic becomes zero at a curie temperature or higher, and the piezoelectric response disappears. At present, lead zirconate titanate (PZT) series piezoelectric ceramics are widely used due to high piezoelectric and electromechanical properties, but have low curie temperature and depolarization temperature, which makes them not applicable to high temperature working environments. However, the piezoelectric ceramic material with excellent performance and high working temperature is very few. This has led to the long-felt necessity of using piezoelectric single crystal materials with complex production processes and high cost for special high-temperature piezoelectric devices. Therefore, development of a high curie piezoelectric ceramic material excellent in piezoelectric properties has been urgent. The bismuth layered structure piezoelectric ceramics are widely focused and studied because of their high curie temperature, strong spontaneous polarization, low dielectric constant, good temperature stability, high mechanical quality factor, etc. which make them suitable for use as piezoelectric materials in high temperature, high frequency applications. Among them, bi 4Ti3O12 was found as the earliest bismuth layered structure ceramic, and the Curie temperature was as high as 675 ℃. However, the low piezoelectric constant and high-temperature resistivity of the BIT piezoelectric ceramic lead to larger leakage current, which severely restricts the practical application of the BIT piezoelectric ceramic in the high-temperature field. Therefore, scientific researchers at home and abroad improve the piezoelectric performance of the bismuth layered structure ceramic by adopting process modification or microelement doping modification, and research discovers that a certain amount of Nb 5+ reduces the dielectric loss and improves the resistivity of the ceramic by introducing the Nb 5+ into a BIT ceramic material, and the conductivity of a doped ceramic sample is reduced by 2-3 orders of magnitude by adopting W 6+ doping instead of the B site of the BIT ceramic, so that the ceramic can bear higher polarization voltage and the piezoelectric performance of ceramic points is improved. However, since the crystal structure thereof determines the spontaneous polarization direction to be two-dimensionally limited, the piezoelectric coefficient thereof is very limited in elevation. The prior modification method for bismuth lamellar materials mainly comprises two methods, namely a method for modifying bismuth lamellar materials through A, B-bit doping substitution or through building symbiotic structures and the like and a method for modifying bismuth lamellar materials through a process for promoting grain oriented growth, such as a rapid plasma sintering method, a hot forging method, a hot pressing method, a template grain growth method and the like. The application field of the bismuth layer-shaped high-temperature piezoelectric ceramic is very wide. Besides being used as a core material of the high-temperature piezoelectric vibration sensor, the material can also be used for manufacturing components such as a high-temperature piezoelectric ceramic capacitor, a high-temperature piezoelectric ceramic filter, a high-temperature piezoelectric ceramic oscillator and the like. In addition, the material has good ferroelectric memory property and can be used for manufacturing components such as ferroelectric random access memories. The bismuth layered high-temperature piezoelectric ceramic has great application potential in the manufacture of piezoelectric components under high-temperature and high-frequency working conditions as a functional material with excellent performance. Along with the continuous development of technology, the application prospect of the material in various fields is wider. Therefore, the method has important scientific significance and practical