CN-119920669-B - Ion implanter dosage control system, method and electronic equipment

CN119920669BCN 119920669 BCN119920669 BCN 119920669BCN-119920669-B

Abstract

The application provides a dosage control system of an ion implanter, which is applied to the technical field of control and regulation systems and comprises a PLC (programmable logic controller), an I/O (input/output) data acquisition module and a motion control module, wherein the PLC is connected with the I/O data acquisition module and the motion control module, various dosage control logics of the ion implanter are arranged in the PLC, a wafer is loaded on the motion control module, the I/O data acquisition module acquires various industrial parameters of the ion implanter, the PLC determines target implantation dosage and target implantation speed according to various process parameters acquired by the I/O data acquisition module, and directly controls the motion control module to move according to the target implantation dosage and the target implantation speed, so that the ion implanter can perform ion implantation on the wafer according to the target implantation dosage and the target implantation speed. The embodiment of the application effectively solves the problems of low response efficiency and low processing precision in the existing dosage control system.

Inventors

LI YONGHENG
TIAN LONG
LIU DONG
ZHANG CONG
MA GUOYU
ZHANG RUI
YAN KAIKAI

Assignees

青岛思锐智能科技股份有限公司

Dates

Publication Date: 20260512
Application Date: 20250120

Claims (7)

1. The dose control system of the ion implanter is characterized by comprising a PLC (programmable logic controller), an I/O (input/output) data acquisition module and a motion control module, wherein the PLC is respectively connected with the I/O data acquisition module and the motion control module, control logic for controlling various doses of the ion implanter is arranged in the PLC, a wafer is loaded on the motion control module, and the PLC is used for: Determining a target implantation dosage and a target implantation speed according to various process parameters of the ion implanter acquired by the I/O data acquisition module, and controlling the motion control module to move according to the target implantation speed so that the ion implanter performs ion implantation on the wafer according to the target implantation dosage and the target implantation speed; The execution period t of the PLC controller is less than or equal to 1ms, wherein the execution period refers to the time when the PLC controller executes a software control logic program built in the PLC controller once; the process parameters comprise the intensity BeamCurrent of the ion beam, the Area unit through which the ion beam flows, and the ion implantation Time Time, and the PLC determines the target implantation Dose Dose according to the following formula: ; The process parameters further include implantation times NumberPass, wafer width WIDTHWAFER, and the PLC determines the target implantation speed ScanVelocity by the following formula: 。
2. the dose control system of claim 1 further comprising an industrial Ethernet bus, wherein said PLC controller is connected to said I/O data acquisition module and said motion control module, respectively, via said industrial Ethernet bus.
3. The dose control system of claim 1, further comprising a host computer, wherein the host computer comprises a user interface, wherein the host computer is connected with the PLC controller, a preset industrial program programming platform is integrated in the PLC controller, various industrial control library files are preset in the preset industrial program programming platform, and the PLC controller is further used for: Receiving various types of control logic of the dose control sent by the upper computer, wherein the various types of control logic of the dose control are software control logic programs written by a user on the user interaction interface based on various types of industrial control library files; and executing control logic of various dose controls according to preset execution periods.
4. The dose control system of claim 1 wherein said process parameters include voltage of ion beam current, position coordinates of said motion control module, said PLC controller further configured to: triggering an abnormality processing control logic if a voltage variation occurs in the voltage of the ion beam, wherein the abnormality processing control logic is used for performing abnormality protection on the wafer when the voltage variation occurs in the voltage of the ion beam, and specifically comprises the following steps: and recording a target position coordinate of the motion control module at the occurrence time of the variable voltage, and determining the to-be-implanted dose at the target position coordinate according to the target implantation dose and the target implantation speed so that the ion implanter can perform the subsequent implantation of the to-be-implanted dose on the target position coordinate.
5. A method of ion implanter dose control, wherein the method is applied to an ion implanter dose control system as claimed in any of claims 1 to 4, the method comprising: Collecting various technological parameters of an ion implanter, and determining target implantation dosage and target implantation speed according to the technological parameters; Controlling a motion control module loaded with a wafer to move according to the target implantation speed so as to enable the ion implanter to implant ions into the wafer according to the target implantation dosage and the target implantation speed; The execution period t of a PLC controller in the ion implanter dosage control system is less than or equal to 1ms, wherein the execution period is the time when the PLC controller executes a software control logic program built in the PLC controller once; the process parameters comprise the intensity BeamCurrent of the ion beam, the Area unit through which the ion beam flows, and the ion implantation Time Time, and the PLC determines the target implantation Dose Dose according to the following formula: ; The process parameters further include implantation times NumberPass, wafer width WIDTHWAFER, and the PLC determines the target implantation speed ScanVelocity by the following formula: 。
6. An electronic device, the electronic device comprising: Processor, and A memory in which a program is stored, Wherein the program comprises instructions which, when executed by the processor, cause the processor to perform the method of claim 5.
7. A non-transitory computer readable storage medium storing computer instructions for causing a computer to perform the method of claim 5.

Description

Ion implanter dosage control system, method and electronic equipment Technical Field The application relates to the technical field of general control or regulation systems, in particular to a dosage control system and method of an ion implanter and electronic equipment. Background An ion implanter is a process production facility capable of converting an insulator into a semiconductor material having conductive properties, in which a dose control system is a core technology of a large beam ion implanter, by which the energy, current, and kind of ions of an ion beam of the ion implanter are precisely controlled, and the accuracy and precision of the ion implanter dose control system will directly determine the accuracy of wafers produced by the ion implanter. However, in the existing dose control system, since the dose control logic is processed by different dose control subsystems, when the ion implantation dose of the ion implanter device is controlled, the different dose control subsystems respectively respond to the responsible process control logic, so that the response efficiency is low and the processing precision is low. Disclosure of Invention In view of the above, the embodiments of the present application provide an ion implanter dose control system, a method and an electronic apparatus for improving the response efficiency and the processing accuracy of the ion implanter dose control system. In a first aspect, an embodiment of the present application provides a dose control system of an ion implanter, where the dose control system includes a PLC controller, an I/O data acquisition module, and a motion control module, where the PLC controller is connected to the I/O data acquisition module and the motion control module, where control logic for controlling various doses of the ion implanter is provided in the PLC controller, where the motion control module is loaded with a wafer, and the PLC controller is configured to: Determining a target implantation dosage and a target implantation speed according to various process parameters of the ion implanter acquired by the I/O data acquisition module, and controlling the motion control module to move according to the target implantation speed so that the ion implanter performs ion implantation on the wafer according to the target implantation dosage and the target implantation speed. In some possible embodiments, the dose control system further comprises an industrial Ethernet bus, and the PLC is respectively connected with the I/O data acquisition module and the motion control module through the industrial Ethernet bus. In some possible embodiments, the dose control system further comprises a host computer, wherein the host computer comprises a user interaction interface, the host computer is connected with the PLC controller, a preset industrial program programming platform is integrated in the PLC controller, various industrial control library files are preset in the preset industrial program programming platform, and the PLC controller is further used for: Receiving various types of control logic of the dose control sent by the upper computer, wherein the various types of control logic of the dose control are software control logic programs written by a user on the user interaction interface based on various types of industrial control library files; and executing control logic of various dose controls according to preset execution periods. In some possible embodiments, the execution period t of the PLC controller is t≤1 ms, wherein the execution period refers to the time when the PLC controller executes a software control logic program built into the PLC controller once. In some possible embodiments, the process parameters include voltage of ion beam current, position coordinates of the motion control module, and the PLC is further configured to: triggering an abnormality processing control logic if a voltage variation occurs in the voltage of the ion beam, wherein the abnormality processing control logic is used for performing abnormality protection on the wafer when the voltage variation occurs in the voltage of the ion beam, and specifically comprises the following steps: and recording a target position coordinate of the motion control module at the occurrence time of the variable voltage, and determining the to-be-implanted dose at the target position coordinate according to the target implantation dose and the target implantation speed so that the ion implanter can perform the subsequent implantation of the to-be-implanted dose on the target position coordinate. In some possible embodiments, the process parameters include an intensity BeamCurrent of the ion beam, an Area per unit Area through which the ion beam flows, and an ion implantation Time, and the PLC controller determines the target implantation Dose by the following formula: In some possible embodiments, the process parameters further include a number of implants NumberPass, a width