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CN-119978922-B - Antireflective composition, antireflective film, patterning method, patterned substrate, semiconductor device, and method for producing the same

CN119978922BCN 119978922 BCN119978922 BCN 119978922BCN-119978922-B

Abstract

The embodiment of the application provides an anti-reflection composition, an anti-reflection film, a patterning method, a patterning substrate, a semiconductor device and a preparation method thereof. The film layer formed by the anti-reflection composition is applied to the manufacturing process of the semiconductor device, so that the reflection and diffraction of parts such as a substrate and the like under the photosensitive material film on a light source can be effectively reduced, the line width roughness of the patterned film can be further reduced, and the white edge phenomenon of the patterned film can be improved.

Inventors

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Assignees

  • 珠海基石科技有限公司

Dates

Publication Date
20260505
Application Date
20250305

Claims (13)

  1. 1. An antireflective composition comprising a resin, an additive and a solvent, wherein the resin comprises one or more of a polyhydroxystyrene resin, a polyester resin and a polyacrylate resin, wherein the polyhydroxystyrene resin comprises structural units derived from hydroxystyrene, and the polyester resin and the polyacrylate resin each have structural units containing hydroxyl groups, and the sum of the mass of the structural units derived from hydroxystyrene and the mass of the structural units containing hydroxyl groups is 10% -50% of the total mass of the resin; The additive comprises a first additive, wherein the first additive comprises one or more of pyrazole, pyrrole, tetrahydropyrrole, pyrimidine, purine, adenine and 6-hydroxy purine; the mass of the additive is less than or equal to 0.05% of the total mass of the resin.
  2. 2. The antireflective composition of claim 1 wherein said additive comprises 0.005% to 0.05% of the total mass of said resin.
  3. 3. The antireflective composition of claim 1 wherein said resin comprises 0.4% to 5% by mass of said antireflective composition.
  4. 4. The antireflective composition of claim 1 wherein said solvent comprises one or more of propylene glycol methyl ether acetate, 2-ethyl-1, 3-propanediol, 1, 4-butyrolactone, methyl 2-hydroxyisobutyrate, propylene glycol methyl ether, ethyl lactate, and cyclohexanone, said solvent comprising 93.5% to 99.5% of the mass of said antireflective composition.
  5. 5. The antireflective composition of claim 1 further comprising a crosslinking agent, said crosslinking agent comprising from 0.05% to 1% by mass of said antireflective composition.
  6. 6. The antireflective composition of claim 1 further comprising an acid-providing compound, said acid-providing compound comprising from 0.01% to 0.5% by mass of said antireflective composition.
  7. 7. The antireflective composition of any one of claims 1-6 wherein said additive further comprises a second additive comprising one or more of ammonia, substituted or unsubstituted aniline, substituted or unsubstituted naphthylamine, and substituted or unsubstituted alkylamine.
  8. 8. The antireflective composition of claim 7 wherein the mass ratio of said first additive to said second additive is from 1:9 to 9:1.
  9. 9. An antireflection film comprising a solid shaped article of the antireflection composition of any one of claims 1-8.
  10. 10. A patterning process, comprising: coating the antireflective composition according to any one of claims 1 to 8 on a substrate to form an antireflective film on the substrate; forming a photosensitive material film on the surface of the anti-reflection film; Exposing and developing the photosensitive material film through a photomask to form a patterned film on the substrate; Etching to obtain the patterned substrate.
  11. 11. A patterned substrate, wherein, the patterned substrate made using the patterning process of claim 10.
  12. 12. A semiconductor device comprising the patterned substrate of claim 11 and a functional layer disposed on the patterned substrate.
  13. 13. A method of manufacturing a semiconductor device, comprising: Coating the antireflective composition of any one of claims 1-8 on a substrate to form an antireflective film on the substrate; forming a photosensitive material film on the surface of the anti-reflection film; Exposing and developing the photosensitive material film through a photomask to form a patterned film on the substrate; Etching to obtain a patterned substrate; And preparing the functional layer to obtain the semiconductor device.

Description

Antireflective composition, antireflective film, patterning method, patterned substrate, semiconductor device, and method for producing the same Technical Field The application relates to the field of semiconductor device preparation, in particular to an anti-reflection composition, an anti-reflection film, a patterning method, a patterning substrate, a semiconductor device and a preparation method thereof. Background With the rapid development of semiconductor integrated circuits in recent years, the critical dimensions of chips are also being reduced. The patterning process generally includes forming a photosensitive material film on a substrate, irradiating the photosensitive material film with an exposure light source through a mask having a predetermined pattern, selectively dissolving the photosensitive material film by development to form a patterned film, and etching the substrate having the patterned film to transfer the pattern. However, the substrate underlying the photosensitive material film may reflect or diffract the light source, resulting in uncontrollable critical dimensions. In order to reduce damage to the patterned film by reflected light and diffracted light, an anti-reflection film layer may be introduced between the photosensitive material film and the substrate. In recent years, organic resin type anti-reflective films are often used in the industry, but as the critical dimensions of chips are gradually reduced, the performance of the anti-reflective films is still expected to be improved to further increase the pattern fineness of the photosensitive material films. Disclosure of Invention In view of this, embodiments of the present application provide an antireflective composition, an antireflective film, a patterning process, a patterned substrate, a semiconductor device, and a method of manufacturing the same. The film layer formed by the anti-reflection composition is applied to the manufacturing process of the semiconductor device, so that the reflection and diffraction of parts such as a substrate and the like under the photosensitive material film on a light source can be effectively reduced, the line width roughness of the patterned film can be further reduced, and the footing phenomenon of the patterned film can be improved. The first aspect of the embodiment of the application provides an anti-reflection composition, which comprises resin, additive and solvent, wherein the resin comprises one or more of polyhydroxystyrene resin, polyester resin and polyacrylate resin, the polyhydroxystyrene resin comprises structural units derived from hydroxystyrene, and the polyester resin and the polyacrylate resin all have structural units containing hydroxyl groups; the additive comprises a first additive and/or the additive comprises a second additive; the first additive comprises one or more of pyrazole, pyrrole, tetrahydropyrrole, pyrimidine, purine, adenine and 6-hydroxy purine; the second additive comprises one or more of ammonia, substituted or unsubstituted aniline, substituted or unsubstituted naphthylamine and substituted or unsubstituted alkylamine; the mass of the additive is less than or equal to 0.05% of the total mass of the resin. When the coating formed by the anti-reflection composition is arranged at the bottom of the photosensitive material layer, under the synergistic effect of resin and specific amount of specified additives, the linewidth roughness (LINE WIDTH Roughness, LWR) of the prepared patterned film can be effectively reduced, and the white edge phenomenon of the patterned film is improved, so that the patterning effect in the process of a semiconductor device is optimized, and the preparation and application of the high-performance semiconductor device are facilitated. In some embodiments of the application, the sum of the mass of the structural units derived from hydroxystyrene and the hydroxyl-containing structural units is from 10% to 50% of the total mass of the resin. In this way, it is more advantageous to reduce LWR of the pattern and to reduce or even eliminate white edges of the pattern. In some embodiments of the application, the additive comprises 0.005% to 0.05% of the total mass of the resin. Thus, the LWR of the pattern formed after the exposure of the photosensitive material film is more favorably reduced, and the phenomenon of white edges of the pattern is reduced or even eliminated. In some embodiments of the application, the resin comprises 0.4% to 5% by mass of the antireflective composition. Thus, the anti-reflection composition has good coating performance, and is favorable for forming an anti-reflection film with proper thickness and better uniformity. In some embodiments of the application, the solvent comprises one or more of propylene glycol methyl ether acetate, 2-ethyl-1, 3-propanediol, 1, 4-butyrolactone, methyl 2-hydroxyisobutyrate, propylene glycol methyl ether, ethyl lactate, and cyclohexanone, wherein the solvent comprises