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CN-120015696-B - Manufacturing method of tungsten through hole

CN120015696BCN 120015696 BCN120015696 BCN 120015696BCN-120015696-B

Abstract

The invention provides a method for manufacturing a tungsten through hole, which comprises the steps of providing equipment comprising a first cavity and a second cavity which are communicated by a vacuum transmission channel, arranging a cooling device in the vacuum transmission channel, arranging a substrate with a through hole on the surface in the first cavity, introducing first gas into the first cavity to deposit the tungsten film layer, obtaining an intermediate structure comprising the substrate and the tungsten film layer, covering the surface of the substrate and filling the through hole, pumping the first cavity, the vacuum transmission channel and the second cavity to the same preset vacuum degree, transmitting the intermediate structure into the second cavity through the vacuum transmission channel, introducing second gas into the second cavity to etch and remove the tungsten film layer outside the through hole, forming the tungsten through hole, breaking the vacuum, and taking out the substrate with the tungsten through hole from the equipment. The manufacturing method of the tungsten through hole can effectively improve the efficiency of tungsten etching, reduce the risk of generating defects and improve the yield of chips.

Inventors

  • LIU BO
  • WANG ZHAOXIANG
  • PENG GUOFA
  • FANG WENQIANG
  • HUANG HAIDONG
  • XU TIEQUAN

Assignees

  • 上海邦芯半导体科技有限公司

Dates

Publication Date
20260508
Application Date
20250221

Claims (10)

  1. 1. A method of manufacturing a tungsten via, comprising the steps of: providing equipment, wherein the equipment comprises a first cavity and a second cavity which are communicated through a vacuum conveying channel, a first isolation door is arranged between the first cavity and the vacuum conveying channel, a second isolation door is arranged between the second cavity and the vacuum conveying channel, a cooling device is arranged in the vacuum conveying channel, and the cooling device uses gas as a cooling medium and works together with a vacuum pump of the vacuum conveying channel; providing a substrate with a through hole on the surface, and placing the substrate in the first cavity; introducing first gas into the first cavity to deposit a tungsten film layer, so as to obtain an intermediate structure comprising the substrate and the tungsten film layer, wherein the tungsten film layer covers the surface of the substrate and is filled into the through hole; vacuumizing to enable the first cavity, the vacuum conveying channel and the second cavity to achieve the same vacuum degree; opening the first isolation door, the cooling device and the second isolation door according to a preset sequence, and conveying the intermediate structure into the second cavity in a preset cooling time through the vacuum conveying channel; Closing the second isolation door, and introducing a second gas into the second cavity to etch and remove the tungsten film outside the through hole, wherein at least a part of the tungsten film in the through hole remains to form a tungsten through hole; breaking vacuum and taking out the substrate formed with the tungsten through holes from the device.
  2. 2. The method of manufacturing a tungsten via according to claim 1, wherein the substrate comprises a substrate and a dielectric layer on the substrate, and the via is formed in the dielectric layer.
  3. 3. The method of manufacturing a tungsten via hole according to claim 1, wherein breaking the vacuum and removing the substrate formed with the tungsten via hole from the apparatus comprises the steps of: Breaking vacuum in the second cavity; And removing the substrate with the tungsten through hole from the second cavity.
  4. 4. The method of manufacturing a tungsten through-hole according to claim 1, wherein the vacuum transfer passage includes a transfer chamber and a third chamber, a third isolation door is provided between the third chamber and the transfer chamber, breaking the vacuum and taking out the substrate formed with the tungsten through-hole from the apparatus comprises the steps of: Opening the second isolation door and the third isolation door according to a preset sequence, and conveying the substrate with the tungsten through holes into the third cavity through the conveying cavity; Closing the second isolation door and the third isolation door, and breaking vacuum in the third cavity; And removing the substrate with the tungsten through hole from the third cavity.
  5. 5. The method of manufacturing a tungsten via according to claim 1, wherein a first RF source and a second RF source are disposed in the second chamber, the first RF source being configured to ionize the second gas to form a plasma, the second RF source being configured to control movement of the plasma toward the substrate.
  6. 6. The method of manufacturing a tungsten via according to claim 5, wherein the power range of the first RF source is 100W-3000W, the frequency range of the first RF source is 400 Khz-70 Mhz, the power range of the second RF source is 10W-1000W, and the frequency range of the second RF source is 400 Khz-70 Mhz.
  7. 7. The method of manufacturing a tungsten via according to claim 1, wherein the first gas comprises a deposition gas and an inert gas, the deposition gas comprises tungsten hexafluoride and silane, and the inert gas comprises at least one of hydrogen, nitrogen, argon, and helium.
  8. 8. The method of manufacturing a tungsten via according to claim 1, wherein the second gas comprises an etching gas and an inert gas, the etching gas comprises sulfur hexafluoride, and the inert gas comprises at least one of helium and argon.
  9. 9. The method of manufacturing a tungsten via according to claim 1, wherein transferring the intermediate structure into the second chamber through the vacuum transfer passage comprises: opening the first isolation door to transfer the intermediate structure from the first cavity to the vacuum transfer channel; closing the first isolation door, opening the cooling device, cooling the intermediate structure, and conveying the intermediate structure to the second isolation door; And closing the cooling device, opening the second isolation door, and placing the intermediate structure in the second cavity.
  10. 10. The method of manufacturing a tungsten via according to claim 1, wherein an upper surface of the tungsten via is lower than an upper surface of the substrate.

Description

Manufacturing method of tungsten through hole Technical Field The invention belongs to the technical field of semiconductor integrated circuit manufacturing, and relates to a manufacturing method of a tungsten through hole. Background Tungsten has been widely used in large scale integrated circuits as inter-metal vias and contact holes due to its low resistivity and good high temperature stability. The manufacturing process mainly comprises two key steps of tungsten film deposition and tungsten film etching, and the process needs to be carried out on two different devices. The manufacturing efficiency of the tungsten through holes and the tungsten contact holes is low due to the various devices, and defects are easily introduced, so that the yield of the chip is affected. Therefore, how to provide a method for manufacturing tungsten through holes to improve the efficiency of tungsten etching and the yield of chips is an important problem to be solved by those skilled in the art. It should be noted that the foregoing description of the background art is only for the purpose of providing a clear and complete description of the technical solution of the present application and is presented for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background of the application section. Disclosure of Invention In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a method for manufacturing a tungsten via, which is used for solving the problems of low manufacturing efficiency, easy introduction of defects and poor chip yield in the prior art. To achieve the above and other related objects, the present invention provides a method for manufacturing a tungsten via, comprising the steps of: providing equipment, wherein the equipment comprises a first cavity and a second cavity which are communicated through a vacuum conveying channel, a first isolation door is arranged between the first cavity and the vacuum conveying channel, a second isolation door is arranged between the second cavity and the vacuum conveying channel, and a cooling device is arranged inside the vacuum conveying channel; providing a substrate with a through hole on the surface, and placing the substrate in the first cavity; introducing first gas into the first cavity to deposit a tungsten film layer, so as to obtain an intermediate structure comprising the substrate and the tungsten film layer, wherein the tungsten film layer covers the surface of the substrate and is filled into the through hole; vacuumizing to enable the first cavity, the vacuum conveying channel and the second cavity to achieve the same vacuum degree; opening the first isolation door, the cooling device and the second isolation door according to a preset sequence, and conveying the intermediate structure into the second cavity in a preset cooling time through the vacuum conveying channel; Closing the second isolation door, and introducing a second gas into the second cavity to etch and remove the tungsten film outside the through hole, wherein at least a part of the tungsten film in the through hole remains to form a tungsten through hole; breaking vacuum and taking out the substrate formed with the tungsten through holes from the device. Optionally, the substrate includes a substrate and a dielectric layer on the substrate, and the through hole is opened in the dielectric layer. Optionally, breaking the vacuum and removing the substrate formed with the tungsten via from the apparatus comprises the steps of: Breaking vacuum in the second cavity; the substrate with the tungsten via is removed from the second chamber. Optionally, the vacuum conveying channel includes a conveying cavity and a third cavity, a third isolation door is disposed between the third cavity and the conveying cavity, and the steps of breaking vacuum and taking out the substrate with the tungsten through hole from the apparatus include the following steps: Opening the second isolation door and the third isolation door according to a preset sequence, and conveying the substrate with the tungsten through holes into the third cavity through the conveying cavity; Closing the second isolation door and the third isolation door, and breaking vacuum in the third cavity; And removing the substrate with the tungsten through hole from the third cavity. Optionally, a first radio frequency source and a second radio frequency source are arranged in the second cavity, the first radio frequency source is used for ionizing the second gas to form plasma, and the second radio frequency source is used for controlling the movement of the plasma towards the substrate. Optionally, in the etching process, the power range of the first radio frequency source is 100w to 3000w, the frequency range of the first radio frequency source is 400Khz