Search

CN-120020995-B - Semiconductor process chamber

CN120020995BCN 120020995 BCN120020995 BCN 120020995BCN-120020995-B

Abstract

The embodiment of the application provides a semiconductor process chamber, which comprises a first cavity, a lining, a second cavity and an exhaust mechanism, wherein the lining is arranged in the first cavity, a surrounding space of the lining forms a first cavity, the second cavity comprises a first end part and a second end part, the exhaust mechanism is arranged between the first cavity and the first end part, the second cavity is provided with a second cavity extending from the first end part to the second end part, the lining is provided with an exhaust part communicated with the first cavity and the second cavity, and the exhaust mechanism is used for conveying gas flowing along a cavity wall of the second cavity from the first end part to the second end part. The exhaust mechanism of the semiconductor process chamber sprays gas to the cavity wall of the second inner cavity, so that a protective gas curtain can be formed to protect the cavity wall of the second inner cavity.

Inventors

  • WANG YAN
  • WANG WEI

Assignees

  • 北京北方华创微电子装备有限公司

Dates

Publication Date
20260512
Application Date
20231120

Claims (14)

  1. 1. A semiconductor process chamber, comprising a first chamber body (110), a liner (120), a second chamber body (130), and an exhaust mechanism (140); The inner liner (120) is arranged in the first cavity (110), a first inner cavity (121) is formed by the surrounding space of the inner liner (120), the second cavity (130) comprises a first end (131) and a second end (132), the exhaust mechanism (140) is arranged between the first cavity (110) and the first end (131), the second cavity (130) is provided with a second inner cavity (133) extending from the first end (131) to the second end (132), and the inner liner (120) is provided with a discharge part (122) communicated with the first inner cavity (121) and the second inner cavity (133); The venting mechanism (140) is for delivering a gas flowing along a wall of the second interior chamber (133) from the first end (131) to the second end (132) to form a shield gas curtain at the wall of the second interior chamber (133).
  2. 2. The semiconductor process chamber according to claim 1, wherein the exhaust mechanism (140) is provided with an air inlet (141) and a first exhaust port (142), wherein the chamber wall of the second inner chamber (133) is provided with a second exhaust port (134), the second exhaust port (134) being located between the first end (131) and the second end (132) in a direction along the first end (131) towards the second end (132), the air inlet (141) being in communication with the first exhaust port (142) and the second exhaust port (134), respectively; The gas supplied from the gas inlet (141) to the first gas outlet (142) can flow along the wall of the second inner cavity (133) from the first end (131) to the second gas outlet (134), and the gas supplied from the gas inlet (141) to the second gas outlet (134) can flow from the second gas outlet (134) toward the second end (132).
  3. 3. The semiconductor process chamber of claim 2, wherein the first exhaust port (142) is an annular exhaust port facing a cavity wall of the second inner cavity (133).
  4. 4. The semiconductor process chamber of claim 2, wherein the exhaust mechanism (140) comprises an air inlet seat (143) and a gas distribution ring (144); The air homogenizing ring (144) is connected with the air inlet seat (143), an air inlet cavity (145) is arranged between the air homogenizing ring (144) and the air inlet seat (143), and the first air outlet (142) and the second air outlet (134) are communicated with the air inlet cavity (145).
  5. 5. The semiconductor process chamber according to claim 4, wherein the gas inlet seat (143) is provided with a first perforation (1431) communicating with the gas inlet cavity (145), an orifice of the first perforation (1431) facing away from the gas inlet cavity (145) forming the gas inlet (141).
  6. 6. The semiconductor process chamber according to claim 4, wherein the gas inlet seat (143) is carried by the first end (131), the gas homogenizing ring (144) is carried by the gas inlet seat (143), the gas homogenizing ring (144) being provided with a plurality of homogenizing holes (1441) communicating the gas inlet cavity (145) with the first gas outlet (142); The exhaust mechanism (140) further comprises a gas blocking ring (146), the gas blocking ring (146) is connected with the uniform gas ring (144), the gas blocking ring (146) is opposite to the uniform flow hole (1441) and is arranged at intervals with one end, deviating from the air inlet cavity (145), of the uniform flow hole (1441), the air inlet seat (143), the uniform gas ring (144) and the gas blocking ring (146) enclose a first annular groove (147), and a notch of the first annular groove (147) facing the cavity wall of the second inner cavity (133) forms the first exhaust port (142).
  7. 7. The semiconductor process chamber of claim 4, wherein the gas inlet seat (143) is provided with a second perforation (1432) in communication with the gas inlet cavity (145), the second cavity (130) being provided with a third perforation (136) in communication with the second perforation (1432) and the second gas outlet (134).
  8. 8. The semiconductor process chamber according to claim 2, wherein the second cavity (130) is provided with a second annular groove (135), a notch of the second annular groove (135) towards the second inner cavity (133) forming the second exhaust port (134).
  9. 9. The semiconductor process chamber of claim 8, wherein the notch of the second annular groove (135) is disposed obliquely and toward the second end (132).
  10. 10. The semiconductor process chamber according to claim 1, further comprising a base (150), the base (150) being in abutment with the second end (132), a side of the base (150) facing away from the second end (132) being provided with an extraction opening (151), the extraction opening (151) being in communication with the second inner cavity (133).
  11. 11. The semiconductor process chamber according to claim 10, wherein the second end portion (132) is provided with a convex ring (1321) protruding towards the inner side of the second inner cavity (133), the convex ring (1321) is provided with a plurality of fourth perforations (1322), the fourth perforations (1322) are obliquely arranged, and a distance between a top end of each fourth perforation (1322) and a cavity wall of the second inner cavity (133) is smaller than a distance between a bottom end of each fourth perforation (1322) and the cavity wall of the second inner cavity (133), and a bottom end of each fourth perforation (1322) faces the pumping hole (151).
  12. 12. The semiconductor process chamber of claim 1, wherein the first interior cavity (121) is a plasma cavity and the second interior cavity (133) is a process byproduct cavity, process byproducts within the plasma cavity being capable of being exhausted to the process byproduct cavity via the exhaust (122).
  13. 13. The semiconductor process chamber of claim 1, further comprising a heater (161), the heater (161) for heating the gas supplied to the exhaust mechanism (140).
  14. 14. The semiconductor process chamber of claim 1, further comprising a pressure regulating valve (162), the pressure regulating valve (162) being configured to regulate the pressure of the gas supplied to the exhaust mechanism (140).

Description

Semiconductor process chamber Technical Field The application relates to the technical field of semiconductor processes, in particular to a semiconductor process chamber. Background In the practice of semiconductor processing, it is sometimes desirable to protect the walls of the semiconductor processing chamber. For example, during the plasma etching process, process byproducts are emitted to the inner chamber, which may cause corrosion to the chamber walls of the inner chamber, thus requiring protection of the chamber walls. In the related art, the cavity wall is generally protected by a lining plate by paving the lining plate on the surface of the cavity wall. Because the lining plate is frequently required to be maintained and replaced in the use process, the maintenance cost of the semiconductor process chamber can be increased. Disclosure of Invention The embodiment of the application provides a semiconductor process chamber, which aims to solve the problem that a lining plate needs to be maintained and replaced regularly in the semiconductor process chamber in the related technology. The semiconductor process chamber comprises a first cavity, a lining, a second cavity and an exhaust mechanism, wherein the lining is arranged in the first cavity, a first cavity is formed in the surrounding space of the lining, the second cavity comprises a first end portion and a second end portion, the exhaust mechanism is arranged between the first cavity and the first end portion, the second cavity is provided with a second cavity extending from the first end portion to the second end portion, the lining is provided with an exhaust portion communicated with the first cavity and the second cavity, and the exhaust mechanism is used for conveying gas flowing along the cavity wall of the second cavity from the first end portion to the second end portion. The exhaust mechanism is provided with an air inlet and a first exhaust port, the cavity wall of the second inner cavity is provided with a second exhaust port, the second exhaust port is positioned between the first end part and the second end part in the direction from the first end part to the second end part, the air inlet is respectively communicated with the first exhaust port and the second exhaust port, the air input to the first exhaust port can flow along the cavity wall of the second inner cavity from the first end part to the second exhaust port, and the air input to the second exhaust port can flow from the second exhaust port to the second end part. Optionally, the first exhaust port is an annular exhaust port facing a cavity wall of the second inner cavity. Optionally, the exhaust mechanism comprises an air inlet seat and an air homogenizing ring, the air homogenizing ring is connected with the air inlet seat, an air inlet cavity is arranged between the air homogenizing ring and the air inlet seat in a surrounding mode, and the first exhaust port and the second exhaust port are communicated with the air inlet cavity. Optionally, the air inlet seat is provided with a first perforation communicated with the air inlet cavity, and an orifice of the first perforation, which is away from the air inlet cavity, forms the air inlet. Optionally, the air inlet seat is supported at the first end, the air homogenizing ring is supported at the air inlet seat, the air homogenizing ring is provided with a plurality of air homogenizing holes communicated with the air inlet cavity and the first air outlet, the air exhausting mechanism further comprises an air blocking ring, the air blocking ring is connected with the air homogenizing ring, the air blocking ring is opposite to the air homogenizing holes and is arranged at one end, facing away from the air inlet cavity, of the air homogenizing holes, a first annular groove is formed by the air inlet seat, the air homogenizing ring and the air blocking ring in an encircling mode, and the notch, facing towards the cavity wall of the second cavity, of the first annular groove forms the first air outlet. Optionally, the air inlet seat is provided with a second perforation communicated with the air inlet cavity, and the second cavity is provided with a third perforation communicated with the second perforation and the second air outlet. Optionally, the second cavity is provided with a second annular groove, and a notch of the second annular groove facing the second inner cavity forms the second exhaust port. Optionally, the notch of the second annular groove is disposed obliquely and toward the second end. Optionally, the semiconductor process chamber further comprises a base, the base is in butt joint with the second end, an air extraction opening is formed in one side, away from the second end, of the base, and the air extraction opening is communicated with the second inner cavity. Optionally, the second end is provided with a convex ring protruding towards the inner side of the second inner cavity, the convex ring is provided