CN-120522826-B - Waveguide modification method based on high-temperature induction

CN120522826BCN 120522826 BCN120522826 BCN 120522826BCN-120522826-B

Abstract

The invention discloses a waveguide modification method based on high temperature induction, which comprises adopting a photon integrated chip, wherein the photon integrated chip comprises a substrate and a waveguide; and applying high temperature to the waveguide to obtain the modified waveguide. The method of the invention realizes the accurate regulation and control of the refractive index of the waveguide material by applying high temperature regulation to the local area of the waveguide, thereby permanently compensating the manufacturing error of the photoelectric device. Compared with the traditional continuous heat regulation compensation method, the continuous energy supply is not needed after the compensation is completed, and the energy consumption is obviously reduced. In addition, the invention has little influence on the device in the compensation process, and almost no extra loss is introduced, thereby maintaining the performance of the device. The invention is particularly suitable for the accurate calibration of large-scale photoelectric devices and has important practical value in the field of integrated optics.

Inventors

WU YATING
CHU TAO
Deng Kaihao
ZHANG JIALE
MA WEI

Assignees

浙江大学

Dates

Publication Date: 20260512
Application Date: 20250427

Claims (6)

1. The waveguide modification method based on high-temperature induction is characterized by comprising the following steps of: The photonic integrated chip comprises a substrate and a waveguide; Applying high temperature to the waveguide to obtain a modified waveguide; the high Wen Wei is more than or equal to the yield temperature of the waveguide material and less than the melting point of the waveguide material; Applying high temperature 1100K on the waveguide by using a laser outside the photonic integrated chip, a thermal resistor in the photonic integrated chip or a doped structure in the photonic integrated chip as a heat source; The photon integrated chip further comprises: The cladding layers are arranged on the substrate, the waveguides are arranged in the cladding layers, cladding hollow structures are arranged on the cladding layers on two sides of the waveguides, the waveguides and the cladding layers wrapping the waveguides form a waveguide assembly, and the cladding hollow structures are heat insulation spaces; and a substrate hollow is arranged on the substrate corresponding to the cladding hollow and the waveguide assembly, and the substrate hollow is a heat insulation space of the substrate and the waveguide assembly.
2. The waveguide modification method based on high temperature induction according to claim 1, wherein the photonic integrated chip is a chip of a mach-zehnder interferometer.
3. The method for modifying a waveguide based on high temperature induction of claim 2, wherein the chip of the mach-zehnder interferometer comprises: A substrate; A cladding layer disposed on the substrate; The input waveguide, the input beam splitter and combiner, the phase shift arm waveguide, the resistance type heat source, the output beam splitter and combiner and the output waveguide are arranged in the cladding; The input waveguide, the input beam splitter, the phase shift arm waveguide, the output beam splitter and the output waveguide are sequentially connected, and the resistance type heat source is arranged around the phase shift arm waveguide.
4. A method of modifying a waveguide based on high temperature induction according to claim 3, characterized in that the application of high temperature on the waveguide comprises in particular: the resistive heat source in the mach-zehnder interferometer chip applies high temperature by heat generation.
5. The method for modifying a waveguide based on high temperature induction according to claim 1, wherein the photonic integrated chip is a chip of a micro-ring resonator, and the chip of the micro-ring resonator comprises: A substrate; A cladding layer disposed on the substrate; and a circular phase shift waveguide, a transmission waveguide, and a resistive heat source disposed within the cladding; The transmission waveguide is coupled with the annular phase shift waveguide, and the resistance type heat source is arranged around the annular phase shift waveguide.
6. The method for modifying a waveguide based on high temperature induction according to claim 5, characterized in that the application of high temperature on the waveguide comprises: the resistive heat source in the micro-ring resonator chip applies a high temperature by heat generation.

Description

Waveguide modification method based on high-temperature induction Technical Field The invention relates to the field of semiconductor photon integrated circuits, in particular to a waveguide modification method based on high-temperature induction. Background The photon integration realizes the functions of light receiving and transmitting, light routing and the like in compact size by integrating passive devices such as beam splitters, waveguide crossings and the like and active devices such as modulators, detectors and the like on the same substrate. Compared with discrete devices, the photonic integration can remarkably improve the chip integration level and shorten the optical interconnection distance on the chip, thereby reducing transmission delay and power consumption. In addition, with the progress of wavelength division multiplexing, high-order modulation format and other technologies, the photonic integrated chip breaks through in high-speed data transmission, and is widely applied to the front-edge fields of optical communication, optical calculation, quantum information and the like. However, due to cost effectiveness and process accuracy, photonic integrated devices are inevitably subject to process errors during fabrication. For example, in the fabrication process of singapore advanced microelectronic foundry based on silicon-on-insulator (SOI) wafers, ridge etch uses 193nm lithography with a minimum process linewidth of 140nm, which typically has a width error value of about ±25nm when used to fabricate 500nm wide ridge waveguides, and a 0.35 micron resolution stepper when mass producing thin film lithium niobate chips, which typically has a fabrication error value of ±200nm. In addition, the thickness of the top silicon, the thickness of the cladding layer and the etching depth of the waveguide of the wafer such as SOI, silicon nitride, thin film lithium niobate and the like have manufacturing errors within a certain range. The above process errors accumulate, causing phase deviations of the optical modes in the waveguide, thereby affecting device performance, with mach-zehnder interferometers (MZI) and micro-ring resonators (MR) being affected particularly significantly. For MZI structures, process errors cause the phase difference of the light beam between the phase shift arms to be random, so that the initial state of the MZI cannot be predicted, and for MR structures, the process errors often cause the resonance wavelength to deviate from a design value, so that the filtering or channel selection function of the MZI is affected. A common compensation strategy is to calibrate the phase difference between the two arms of the MZI and the resonant wavelength of the MR to ideal values by continuously thermally tuning the refractive index of the waveguide material. However, in a large-scale integrated system, the heat regulating method not only continuously increases the power consumption, but also obviously improves the electric control complexity and the packaging difficulty, and has higher requirements on the energy efficiency and the stability of the system. In this regard, a series of permanent post-processing schemes such as femtosecond laser processing, germanium doping, etc. have been proposed, however, these methods have problems of additional loss, complicated processing, high cost, etc., and thus, challenges are still faced in large-scale commercial applications. In summary, it is necessary to propose a non-destructive, non-volatile, efficient post-processing scheme to compensate for process errors. Disclosure of Invention The invention provides a waveguide modification method based on high-temperature induction, which is a lossless, efficient and nonvolatile process error compensation method based on local high-temperature heat treatment. The method realizes accurate regulation and control of the refractive index of the waveguide material by applying short-time high-temperature treatment to the partial area of the waveguide, thereby permanently compensating the manufacturing error of the photoelectric device. Compared with the traditional continuous heat regulation compensation method, the continuous energy supply is not needed after the compensation is completed, and the energy consumption is obviously reduced. In addition, the invention has little influence on the device in the compensation process, and almost no extra loss is introduced, thereby maintaining the performance of the device. The invention is particularly suitable for the accurate calibration of large-scale photoelectric devices and has important practical value in the field of integrated optics. A waveguide modification method based on high temperature induction comprises the following steps: The photonic integrated chip comprises a substrate and a waveguide; and applying high temperature to the waveguide to obtain the modified waveguide. The high temperature is greater than or equal to the yield temperature of the w