CN-120728359-B - Semiconductor laser element with topological phonon state layer

CN120728359BCN 120728359 BCN120728359 BCN 120728359BCN-120728359-B

Abstract

The invention provides a semiconductor laser element with a topological phonon state layer, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top. The invention is provided with the topological phonon state layers with a multi-layer structure between the lower waveguide layer and the lower limiting layer of the semiconductor laser element, designs the saturated electron drift rate distribution characteristic, the electron affinity energy distribution characteristic and the polarized optical phonon energy distribution characteristic of each topological phonon state layer, can adjust the topological phase change of the topological quantum state and the phonon spectrum, changes the quantum state and the lattice vibration mode, reduces Stokes frequency shift loss of the difference of pump light and oscillating light photon energy, and suppresses the thermal stress and the temperature quenching problem of the laser.

Inventors

ZHENG JINJIAN
LIU ZIHAN
CAO JUN
ZHANG JIANGYONG
LI SHUIQING
KAN HONGZHU
LAN JIABIN
CAI XIN
ZHONG ZHIBAI
YANG LIXUN
XUN FEILIN
DENG HEQING
LI XIAOQIN

Assignees

安徽格恩半导体有限公司

Dates

Publication Date: 20260508
Application Date: 20250702

Claims (10)

1. The semiconductor laser element with the topological phonon state layer comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, and is characterized in that the topological phonon state layer is arranged between the lower waveguide layer and the lower limiting layer and comprises a first topological phonon state layer, a second topological phonon state layer and a third topological phonon state layer which are sequentially arranged from bottom to top, and saturated electron drift velocity distribution characteristics, electron affinity energy distribution characteristics and polarization optical phonon energy distribution characteristics are all arranged in the first topological phonon state layer, the second topological phonon state layer and the third topological phonon state layer; The saturated electron drift rate of the first topological phonon state layer has a curve distribution of a function y 1 =A+B*lnx 1 +1/x 1 -1; the saturated electron drift rate of the second topological phonon state layer has a linear function distribution; the saturated electron drift rate of the third topological phonon state layer has a second four-quadrant curve distribution of a function y 2 =C+D*cosx 3 /x 3 ; the electron affinity energy of the first topological phonon state layer has a curve distribution of a function y 3 =E+F*lnx 1 /e x1 ; the electron affinity energy of the second topological phonon state layer has linear function distribution; The electron affinity energy of the third topological phonon state layer has a third quadrant curve distribution of a function y 4 =G+H*sinx 3 /x 3 2 ; The polarized optical phonon energy of the first topological phonon state layer has a curve distribution of a function y 5 =I+J*lnx 1 /x 1 ; The polarized optical phonon energy of the second topological phonon state layer has a linear function distribution; The polarized optical phonon energy of the third topological phonon state layer has a curve distribution of a function y 6 =K+L*x 3 e x3 ; Wherein x 1 is the depth of the first topological phonon state layer towards the second topological phonon state layer, and x 3 is the depth of the third topological phonon state layer towards the lower waveguide layer.
2. The semiconductor laser device according to claim 1, wherein the saturated electron drift rate of the first topological phonon state layer is a, the saturated electron drift rate of the second topological phonon state layer is b, and the saturated electron drift rate of the third topological phonon state layer is c, wherein 1E6 cm/s≤a≤b≤c≤5E 8cm/s.
3. The semiconductor laser device according to claim 1, wherein the first topological phonon layer has an electron affinity d, the second topological phonon layer has an electron affinity e, and the third topological phonon layer has an electron affinity f, wherein e≤e≤d≤f≤10ev.
4. The semiconductor laser device according to claim 1, wherein the first topological phonon layer has a polarization optical phonon energy g, the second topological phonon layer has a polarization optical phonon energy h, and the third topological phonon layer has a polarization optical phonon energy i, wherein i≤i≤h≤g≤500 meV.
5. The semiconductor laser device with the topological phonon state layer according to claim 1, wherein the first, second, and third topological phonon state layers further have refractive index distribution characteristics therein; the refractive index coefficient of the first topological phonon state layer has a first quadrant curve distribution of a function y 7 =M+N*sin/x 1 2 ; The refractive index coefficient of the second topological phonon state layer has linear function distribution; the refractive index coefficient of the third topological phonon state layer has a third quadrant curve distribution of a function y 8 =O+P*sinx 3 /x 3 2 ; The refractive index of the first topological phonon state layer is j, the refractive index of the second topological phonon state layer is k, and the refractive index of the third topological phonon state layer is l, wherein j is more than or equal to 1 and less than or equal to k is more than or equal to l and less than or equal to 5.
6. The semiconductor laser device with topological phonon state layers according to claim 1, wherein the first, second and third topological phonon state layers further have a lateral phonon rate distribution characteristic therein; The transverse phonon velocity of the first topological phonon state layer has a curve distribution of a function y 9 =Q+R*x 1 /e x1 ; the lateral phonon velocity of the second topological phonon state layer has a linear function distribution; The transverse phonon velocity of the third topological phonon state layer has a third quadrant curve distribution of a function y 10 =S+T*x 3 2 e x3 ; The transverse phonon velocity of the first topological phonon state layer is m, the transverse phonon velocity of the second topological phonon state layer is n, and the transverse phonon velocity of the third topological phonon state layer is p, wherein m is more than or equal to 5E4cm/s, n is more than or equal to 5E7cm/s.
7. The semiconductor laser device with topological phonon state layers according to claim 1, wherein the first, second and third topological phonon state layers further have longitudinal phonon rate distribution characteristics therein; The longitudinal phonon rate of the first topological phonon state layer has a curve distribution of a function y 11 =U+V*x 1 /e x1 ; the longitudinal phonon velocity of the second topological phonon state layer has a linear function distribution; the longitudinal phonon velocity of the third topological phonon state layer has a third quadrant curve distribution of a function y=w+z x 3 2 e x3 ; The longitudinal phonon velocity of the first topological phonon state layer is r, the longitudinal phonon velocity of the second topological phonon state layer is s, and the longitudinal phonon velocity of the third topological phonon state layer is t, wherein r is more than or equal to 5E4cm/s and less than or equal to 5E7cm/s.
8. The semiconductor laser device with the topological phonon state layer according to claim 1, wherein the first, second, and third topological phonon state layers are any one or any combination of GaN、InGaN、InN、AlInN、AlGaN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、InGaAsN、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、InAsSb、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga 2 O 3 、BN、 diamond, baTiO 3 、BAs、PbTiO 3 、FAPbI 3 (lead imide iodide), csPbI 3 、Bi 2 O 2 Se.
9. The semiconductor laser device with the topological phonon-state layer according to claim 1, wherein the active layer is a periodic structure consisting of a well layer and a barrier layer, and the number of periods is 3-1; The well layer is any one or any combination of GaN、InGaN、InN、AlInN、AlGaN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、InGaAsN、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、InAsSb、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga 2 O 3 、BN and has the thickness of 10 to 100 meter; the barrier layer is any one or any combination of GaN、InGaN、InN、AlInN、AlGaN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、InGaAsN、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、InAsSb、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga 2 O 3 、BN、 diamonds and has a thickness of 10 to 150 angstroms.
10. The semiconductor laser device with the topology phonon-state layer of claim 1, wherein the lower confinement layer, the lower waveguide layer, the upper confinement layer are any one or any combination of GaN、InGaN、InN、AlInN、AlGaN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、InGaAsN、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、InAsSb、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga 2 O 3 、BN; The substrate comprises any one of sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, inAs, gaSb, a sapphire/SiO 2 composite substrate, mo, tiW, cuW, cu, a sapphire/AlN composite substrate, diamond, sapphire/SiN x , a sapphire/SiO 2 /SiN x composite substrate, magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 and LiGaO 2 composite substrate.

Description

Semiconductor laser element with topological phonon state layer Technical Field The application relates to the field of semiconductor photoelectric devices, in particular to a semiconductor laser element with a topological phonon state layer. Background The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like compared with other types of lasers. The laser is largely different from the nitride semiconductor light emitting diode: 1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level; 2) The current density of the laser reaches KA/cm2, which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation drop effect is caused; 3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated; 4) The principle is different that the light emitting diode generates radiation composite luminescence by electron hole transition to a quantum well or a p-n junction under the action of external voltage, the laser can be excited only when the excitation condition is satisfied, the inversion distribution of carriers in an active area is necessarily satisfied, stimulated radiation light oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss when the threshold condition is satisfied, and finally laser is output. The nitride semiconductor laser has the following problems: 1) The non-radiative composite loss and free carrier absorption exist in the active area of the laser chip to generate a large amount of heat, meanwhile, the resistance of the epitaxy and chip materials can generate joule heat loss and carrier absorption loss under current injection, the thermal conductivity of the chip materials is low, the heat dissipation performance is poor, the temperature of an active layer is increased, and the problems of red shift of lasing wavelength, reduction of quantum efficiency, reduction of power, increase of threshold current, shortening of service life, deterioration of reliability and the like occur; 2) The heat loss is that Stokes shift loss formed by photon energy difference between pumping light and oscillating light is converted into heat, and the energy loss of the coupling ratio of pumping energy level to upper energy level of laser is not 1 is converted into heat, and the two together produce a large amount of waste heat, so that the temperature distribution of the laser is uneven, and the thermal expansion and thermal stress distribution are caused to be uneven, and the temperature quenching, the laser fracture, the thermal lens effect and the stress birefringence effect are generated, and the thermal lens generates lens-like phenomenon in space, and the stress birefringence effect changes the polarization state of incident light, so that the laser beam is depolarized and distorted. Disclosure of Invention In order to solve one of the above technical problems, the present invention provides a semiconductor laser device having a topological phonon state layer. The embodiment of the invention provides a semiconductor laser element with a topological phonon state layer, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein the topological phonon state layer is arranged between the lower waveguide layer and the lower limiting layer and comprises a first topological phonon state layer, a second topological phonon state layer and a third topological phonon state layer which are sequentially arranged from bottom to top, and saturated electron drift velocity distribution characteristics, electron affinity energy distribution characteristics and polarization optical phonon energy distribution characteristics