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CN-120793914-B - Flexible substrate material doped with two-dimensional material and preparation method of sensor of flexible substrate material

CN120793914BCN 120793914 BCN120793914 BCN 120793914BCN-120793914-B

Abstract

The invention discloses a flexible substrate material doped with a two-dimensional material and a preparation method of a sensor of the flexible substrate material, and belongs to the technical field of arrayed sensors. The electrode material comprises a two-dimensional material substrate, a composite doped atomic layer and an insulating isolation layer, high-density defect sites are formed through H 2 plasma treatment, uniform distribution of doped atoms is realized by combining atomic layer deposition, and a self-aligned photoetching technology is adopted to accurately integrate an electrode and a temperature-sensitive layer. According to the scheme, the electronic structure of the two-dimensional material is optimized through the composite doping synergistic effect, the multilayer heterojunction design and the high-precision preparation process are combined, the response capability of the electrode to weak pressure signals is remarkably improved, and the high resolution and stability of the sensor in pressure and temperature detection are realized. The invention has wide application prospect in the fields of wearable equipment, medical monitoring, robot touch perception and the like.

Inventors

  • CHEN XINZHUN
  • ZHANG BIN
  • LI NA
  • MA PENGFEI
  • WEN JIE

Assignees

  • 广州奥松电子股份有限公司

Dates

Publication Date
20260505
Application Date
20250626

Claims (10)

  1. 1. A flexible substrate material doped with a two-dimensional material, comprising: the two-dimensional material is at least one of graphene, molybdenum disulfide, tungsten diselenide or black phosphorus; The composite doping atomic layer comprises nitrogen and boron, wherein the atomic doping ratio of the nitrogen to the boron is 1:3-3:1, and the composite doping atoms are uniformly distributed on the surface of the two-dimensional material substrate and the grain boundary defect; the insulating isolation layer is a boron nitride nano sheet and/or an aluminum oxide film, and covers the surface of the two-dimensional material substrate, and the thickness of the insulating isolation layer is 5-20nm.
  2. 2. The flexible substrate material according to claim 1, wherein the two-dimensional material substrate is a heterojunction formed by graphene and MoS 2 , the thickness of the graphene layer in the heterojunction is 1-3 atomic layers, the thickness of the MoS 2 layer is 2-5 atomic layers, and the composite doping atoms are preferentially enriched in the edge active sites of the MoS 2 layer.
  3. 3. The flexible substrate material of claim 1, wherein the total doping concentration of the composite doping atoms is 1 x 1013cm "2 to 5 x 101 4 cm" 2, the surface work function of the two-dimensional material substrate is 4.2-5.1eV, and continuous adjustment is achieved by adjusting the doping ratio of nitrogen and boron.
  4. 4. A method of manufacturing a high resolution arrayed sensor based on the flexible substrate material of any one of claims 1-3, comprising the steps of: The two-dimensional material substrate pretreatment, namely transferring a two-dimensional material film onto a silicon and/or polyimide substrate, and adopting H 2 plasma treatment, wherein the treatment parameters are that the flow rate of H 2 is 60-120mL/min, and the radio frequency power is 1.4-1.8A; Sequentially introducing NH 3 and B 2 H 6 gas, and performing atomic layer deposition at 200-400 ℃ for 50-200 times at a flow ratio of 1:1 to 3:1; Forming a boron nitride nano sheet layer and/or an Al 2 O 3 film on the surface of the doped two-dimensional material by spin coating and/or chemical vapor deposition, wherein the thickness is controlled to be 5-20nm by deposition time; And defining an arrayed electrode pattern on the surface of the flexible substrate material by adopting a self-aligned photoetching technology, wherein the line width is less than or equal to 10 mu m, depositing a vanadium oxide temperature-sensitive layer by electron beam evaporation, and connecting the vanadium oxide temperature-sensitive layer with the thickness of 100-300nm to an ASIC (application specific integrated circuit) of a signal processing chip through a conductive through hole with the diameter of less than or equal to 5 mu m.
  5. 5. The method according to claim 4, wherein the NH 3 gas purity is not less than 99.999% and the B 2 H 6 gas partial pressure is controlled to be 1-5Pa, and the substrate temperature fluctuation during the deposition process is not more than + -5 ℃.
  6. 6. The preparation method of claim 4, wherein when the two-dimensional material substrate is a graphene/MoS 2 heterojunction, the H 2 plasma treatment forms sulfur vacancy defects on the surface of the MoS 2 layer, and the defect density is 1X 1012cm < -2 > to 5X 1012cm < -2 >.
  7. 7. The method of claim 4, wherein the overlay accuracy of the self-aligned photolithography technique is less than or equal to 2 μm, a deep ultraviolet lithography light source is used, the wavelength is 248nm, and the edge alignment error between the electrode and the temperature sensitive layer is less than or equal to 1 μm.
  8. 8. The method of claim 4, wherein the signal processing chip ASIC integrates a low noise amplifier and a 24 bit a/D converter, and the conductive vias have an aspect ratio of 5:1 to 10:1, filled with filler.
  9. 9. The method of claim 6, further comprising the step of creating a graded doped heterostructure having an N doping concentration gradient of 10% -90% and a B doping concentration gradient of 90% -10% by sectionally controlling the flow of atomic layer deposition gas between the two-dimensional material substrate and the insulating spacer layer, the graded heterojunction having an energy band offset ΔE of 0.3-0.8eV.
  10. 10. The method according to claim 4, wherein the array electrode units of the sensor are distributed in m x n matrix, m, n is equal to or greater than 2, the size of each electrode unit is 20 μm x 20 μm to 50 μm x 50 μm, the cell spacing is 50 μm to 100 μm, adjacent electrode units are isolated by a silicon dioxide insulating layer, and the thickness of the insulating layer is 1-5 μm.

Description

Flexible substrate material doped with two-dimensional material and preparation method of sensor of flexible substrate material Technical Field The invention relates to the technical field of electronic materials, in particular to a flexible substrate material doped with a two-dimensional material and a preparation method of a sensor of the flexible substrate material. Background In the field of arrayed sensors, the performance of electrode materials directly affects the capture capacity and resolution of the sensor for weak signals. The traditional electrode materials such as metal films or carbon-based composite materials have the problems of low electron transmission efficiency, insufficient surface active sites and the like, and are difficult to meet the requirement of high-sensitivity pressure detection. Two-dimensional materials such as graphene and molybdenum disulfide are ideal choices of electrode materials due to excellent electrical properties, large specific surface area and atomic-scale thickness, but the intrinsic electronic structure of the two-dimensional materials limits the response capability to pressure signals. In the prior art, although the performance of a two-dimensional material can be improved by doping of a single element, the problems of poor doping uniformity, obvious interlayer coupling effect and the like lead to limited improvement of the resolution of the sensor, and the sensor is lack of a collaborative design with Wen Minceng and an insulating layer, so that the accurate detection of multiple physical quantities is difficult to realize. In addition, the traditional preparation process has the problems of low alignment precision, multiple interface defects and the like when the electrode and the sensor functional layer are integrated, and further influences the performance of the device. Therefore, a technical scheme of optimizing a two-dimensional material electronic structure through a composite doping system and combining a high-precision integration process is needed to break through the bottleneck of the existing sensor in resolution and stability. Disclosure of Invention In order to solve the technical problems that in the prior art, although the performance of a two-dimensional material can be improved by single element doping, the problems of poor doping uniformity, obvious interlayer coupling effect and the like lead to limited improvement of the resolution of a sensor, and the co-design with Wen Minceng and an insulating layer is lacking, and the accurate detection of multiple physical quantities is difficult to realize, the application provides a flexible substrate material doped with the two-dimensional material and a preparation method of the sensor. The application provides a flexible substrate material doped with a two-dimensional material, which comprises a two-dimensional material substrate, a composite doped atomic layer, an insulating isolation layer and a protective layer, wherein the two-dimensional material is at least one of graphene, molybdenum disulfide, tungsten diselenide or black phosphorus, the composite doped atomic layer comprises nitrogen and boron, the atomic doping ratio of the nitrogen to the boron is 1:3-3:1, the composite doped atoms are uniformly distributed on the surface of the two-dimensional material substrate and at the grain boundary defect, and the insulating isolation layer is a boron nitride nano sheet or an aluminum oxide film and covers the surface of the two-dimensional material substrate, and has the thickness of 5-20nm. In one embodiment, the two-dimensional material substrate is a heterojunction formed by graphene and MoS 2, the thickness of the graphene layer in the heterojunction is 1-3 atomic layers, the thickness of the MoS 2 layer is 2-5 atomic layers, and the composite doping atoms are preferentially enriched in the edge active sites of the MoS 2 layer. In one embodiment, the total doping concentration of the composite doping atoms is 1X 1013cm < -2 > to 5X 101 4 cm < -2 >, the surface work function of the two-dimensional material substrate is 4.2-5.1eV, and the continuous adjustment is realized by adjusting the doping proportion of nitrogen and boron. The preparation method of the high-resolution arrayed sensor based on the electrode material comprises the steps of transferring a two-dimensional material film onto a silicon or polyimide substrate, adopting H 2 plasma treatment, wherein treatment parameters are H 2 flow rate of 60-120mL/min, radio frequency power of 1.4-1.8A, treatment time of 3-10 min, a composite doping process comprises sequentially introducing NH 3 and B 2H6 gases, carrying out atomic layer deposition at a flow rate ratio of 1:1 to 3:1 at 200-400 ℃ for 50-200 times, preparing an insulating isolation layer, forming a BN nanosheet or an Al 2O3 film on the surface of the doped two-dimensional material by spin coating or chemical vapor deposition, controlling the thickness to be 5-20nm by adopting a