CN-120802572-B - Mask manufacturing method and exposure system

CN120802572BCN 120802572 BCN120802572 BCN 120802572BCN-120802572-B

Abstract

The invention discloses a method for manufacturing a mask, which comprises the steps of exposing a material belt to obtain a first belt section with a plurality of first patterns, wherein the material belt comprises a belt-shaped foil and a photoresist layer formed on the surface of the belt-shaped foil, a spacing area is arranged between two adjacent first patterns, each first pattern comprises a plurality of mother mark patterns and a plurality of pixel hole patterns, a processor is used for controlling laser to sequentially expose the plurality of spacing areas in a set path to obtain a second belt section with a plurality of second patterns, the set path is matched with a set drawing in the processor, and the second patterns comprise a plurality of sub mark patterns corresponding to the mother mark patterns and auxiliary patterns corresponding to the spacing areas. The invention also discloses an exposure system.

Inventors

CHEN DINGGUO
WANG XING
YANG TAO
XU ZONGYI

Assignees

寰采星科技(宁波)有限公司

Dates

Publication Date: 20260508
Application Date: 20250821

Claims (12)

1. A method for manufacturing a reticle, comprising: exposing a material belt to obtain a first belt section with a plurality of first patterns, wherein the material belt comprises a belt-shaped foil and a photoresist layer formed on the surface of the belt-shaped foil, a spacing area exists between two adjacent first patterns, and the first patterns comprise a plurality of mother mark patterns and a plurality of pixel hole patterns; Sequentially exposing a plurality of the spacers by using a processor to control laser to obtain a second band segment with a plurality of second patterns, wherein the set paths are matched with set drawings in the processor, the second patterns comprise a plurality of sub-mark patterns corresponding to a plurality of mother mark patterns and auxiliary patterns corresponding to the spacers, and the controlling the laser to expose the spacers by using the set paths comprises the following steps: Acquiring the actual coordinates of the mother mark graph; Determining an offset relation between the actual coordinates and corresponding theoretical coordinates in the set drawing, wherein the theoretical coordinates correspond to the sub-mark patterns; Correcting the set path according to the offset relation, and obtaining an initial coordinate so that the alignment precision of the second graph formed by the set path and the corresponding first graph accords with a set standard; and controlling the laser to expose the corresponding interval area along the set path by taking the initial coordinate as a starting point, so as to obtain the corresponding second graph.
2. The method of claim 1, wherein the step of determining the offset relationship between the actual coordinates and the corresponding theoretical coordinates in the setup drawing comprises: determining a first offset dimension of the actual coordinates relative to the theoretical coordinates along the length direction of the material belt; determining a second offset dimension of the actual coordinates relative to the theoretical coordinates along the width direction of the material belt; Determining the deviation value of the distance between two adjacent actual coordinates relative to the distance between two corresponding adjacent theoretical coordinates; Determining a deviation angle between the connecting line direction of two adjacent actual coordinates and the corresponding connecting line direction between two adjacent theoretical coordinates; And establishing an offset relation between the actual coordinate and the theoretical coordinate according to the first offset size, the second offset size, the offset value and the offset angle.
3. The method according to claim 2, wherein the step of correcting the set path according to the offset relationship and obtaining the start coordinates so that the alignment accuracy of the second pattern formed by the set path and the corresponding first pattern meets a set criterion, comprises: When the deviation value exceeds a set range, the size of the second graph formed by the set path is matched with the size of the first graph by enlarging or reducing the set drawing; When the first offset size or the second offset size exceeds a set value, offset compensation is performed on the initial coordinates along the length or width direction of the material belt, so that the alignment precision of the sub-mark patterns formed by the set path and the main mark patterns accords with a set standard; And under the condition that the deviation angle exceeds a set angle, rotating the set drawing so that the rotation angle of the second graph formed by the set path relative to the first graph meets a set standard.
4. The method of claim 1, wherein the web has a plurality of first exposure areas for forming a first pattern, the length of the pixel aperture pattern is less than the length of the first exposure areas such that a web blank is present between an edge of the pixel aperture pattern and an edge of the first exposure areas, the master mark pattern is located in the web blank, The mother mark pattern comprises a plurality of first marks and a plurality of second marks, wherein the first marks and the second marks are symmetrically arranged about the pixel hole pattern and used for aligning the second patterns on two sides of the first pattern respectively.
5. The method of claim 4, wherein the spacers comprise a first spacer adjacent to one side of the first pattern and a second spacer adjacent to the other side of the same first pattern, the second pattern comprising a first net pattern corresponding to the first spacer and a second net pattern corresponding to the second spacer, respectively, The first mark is used for aligning the first net pattern with the first pattern, and the second mark is used for aligning the second net pattern with the first pattern.
6. The method of claim 5, wherein the step of controlling the laser to sequentially expose the plurality of spacers by the processor to the set path comprises: Pulling the material belt along the first length direction, and controlling laser to sequentially expose the plurality of first interval areas by a processor to form a plurality of first net patterns; and pulling the material belt along a second length direction, and controlling laser to sequentially expose the plurality of second spacing areas through a processor to form a plurality of second net patterns, wherein the first length direction is opposite to the second length direction.
7. The method of any one of claims 1 to 6, wherein the first pattern further comprises at least one center hole and at least two alignment holes, the center hole being located at the center of the pixel hole pattern, at least one of the alignment holes being located at the middle of either wide side of the first pattern such that a line connecting the center hole and the alignment holes has a first direction, the first direction being coincident with a length direction of the tape, The second pattern comprises a fixed hole positioned at the middle part of the second pattern along the width direction of the material belt, an offset angle is formed between the connecting line of the central hole and the fixed hole and the first direction, and the offset angle is used for displaying the rotation angle of the exposed second pattern relative to the corresponding first pattern.
8. An exposure system, characterized in that the exposure system comprises a conveying mechanism, a first exposure device and a second exposure device, The conveying mechanism is used for driving the material belt to sequentially pass through the first exposure device and the second exposure device so as to sequentially expose different areas of the material belt to form a plurality of first patterns and second patterns, and a spacing area exists between two adjacent first patterns; The first exposure device comprises at least one first light source and at least one photomask, the photomask is positioned on the light emitting side of the first light source, and the photomask comprises a master mark pattern area and a pixel hole pattern area and is used for exposing the material belt to form a master mark pattern and a pixel hole pattern; The second exposure device comprises a detection module, a processor module and at least one laser source, wherein the detection module is used for acquiring actual coordinates of the master mark patterns, a set drawing is configured in the processor module, the processor module is used for matching the actual coordinates acquired by the detection module with the set drawing so as to establish an offset relation between the actual coordinates and corresponding theoretical coordinates in the set drawing, the laser source is controlled to expose the material belt to form the second patterns according to the offset relation, and the second patterns comprise a plurality of sub mark patterns corresponding to the plurality of master mark patterns and auxiliary patterns corresponding to the interval area.
9. The exposure system according to claim 8, wherein the first exposure device includes two photomasks and two first light sources for exposing the front and back surfaces of the material tape, the two photomasks being disposed opposite to and spaced apart from each other, the two first light sources being located outside the two photomasks, respectively, a space between the two photomasks being for passing the material tape, The second exposure device comprises two opposite laser sources which are arranged at intervals and are used for exposing the front surface and the back surface of the material belt, and the interval between the two laser sources is used for enabling the material belt to pass through.
10. The exposure system of claim 8, wherein the transport mechanism comprises an unwind mechanism, a wind-up mechanism, and a position control module, The unreeling mechanism and the reeling mechanism are respectively arranged at the inlet position and the outlet position of the second exposure device, so that the unreeling of the unreeling mechanism and the reeling of the reeling mechanism move in the second exposure device, The position control module comprises a controller and at least two detectors, wherein the two detectors are respectively positioned at the unreeling mechanism and the reeling mechanism and used for detecting the transmission position of the material belt, and the controller is used for controlling the unreeling mechanism and the reeling mechanism through the positions detected by the detectors so as to realize reeling and unreeling of the material belt.
11. The exposure system according to any one of claims 8 to 10, wherein the second exposure device includes a movement adjustment mechanism, the laser source being fixedly connected to the movement adjustment mechanism, the movement adjustment mechanism being movable in a plurality of directions relative to the web, the processor module exposing the web in a set path by controlling the movement adjustment mechanism.
12. The exposure system according to any one of claims 8 to 10, further comprising a tensioning mechanism for providing the web exposure tension, the tensioning mechanism comprising a first pinch roller group and a second pinch roller group located on both sides of a region to be exposed of the first exposure device, respectively, the first pinch roller group and the second pinch roller group being configured to form a set exposure tension by pinching and conveying the web.

Description

Mask manufacturing method and exposure system Technical Field The invention relates to a mask manufacturing method and an exposure system. Background In order to improve the productivity of large-sized Organic Light-Emitting Diode (OLED) display screens, manufacturers of domestic precision metal masks (FINE METAL MASK, FMM) are developing and producing FMMs of the high generation. At present, a parallel exposure machine with larger size is generally used for carrying out integral exposure of a high-generation FMM, but the domestic production capacity of the exposure machine of the high-generation FMM and a large-size photomask thereof is not available at present, the foreign import is usually relied on, the price is high, and the sizes of the photomask, the exposure area and the exposure machine platform of the high-generation FMM are increased, so that the exposure machine is not matched with the existing small-size exposure machine of the low-generation FMM, the small-size exposure machine and the photomask of the low-generation FMM cannot be improved to obtain the high-generation FMM, the manufacturing cost of the high-generation FMM is further increased, and the cost reduction and market popularization of an OLED screen of a terminal product are unfavorable. Therefore, an alternative scheme for exposing the high-generation FMM is developed, so that the existing small-size exposing machine can realize the processing and production of the high-generation large-size FMM, the efficiency of the exposing machine is improved, the economic cost is reduced, and the problem in the field is needed to be solved. Disclosure of Invention The present invention aims to solve one of the technical problems in the related art to a certain extent. Therefore, the invention provides a mask manufacturing method and an exposure system. To achieve the above object, as a first aspect of the present invention, there is provided a method for manufacturing a reticle, comprising: exposing a material belt to obtain a first belt section with a plurality of first patterns, wherein the material belt comprises a belt-shaped foil and a photoresist layer formed on the surface of the belt-shaped foil, a spacing area exists between two adjacent first patterns, and the first patterns comprise a plurality of mother mark patterns and a plurality of pixel hole patterns; Sequentially exposing a plurality of the spacers by using a processor to control laser to obtain a second band segment with a plurality of second patterns, wherein the set paths are matched with set drawings in the processor, the second patterns comprise a plurality of sub-mark patterns corresponding to a plurality of mother mark patterns and auxiliary patterns corresponding to the spacers, and the controlling the laser to expose the spacers by using the set paths comprises the following steps: Acquiring the actual coordinates of the mother mark graph; Determining an offset relation between the actual coordinates and corresponding theoretical coordinates in the set drawing, wherein the theoretical coordinates correspond to the sub-mark patterns; Correcting the set path according to the offset relation, and obtaining an initial coordinate so that the alignment precision of the second graph formed by the set path and the corresponding first graph accords with a set standard; and controlling the laser to expose the corresponding interval area along the set path by taking the initial coordinate as a starting point, so as to obtain the corresponding second graph. Further, the step of determining the offset relationship between the actual coordinates and the corresponding theoretical coordinates in the setting drawing includes: determining a first offset dimension of the actual coordinates relative to the theoretical coordinates along the length direction of the material belt; determining a second offset dimension of the actual coordinates relative to the theoretical coordinates along the width direction of the material belt; Determining the deviation value of the distance between two adjacent actual coordinates relative to the distance between two corresponding adjacent theoretical coordinates; Determining a deviation angle between the connecting line direction of two adjacent actual coordinates and the corresponding connecting line direction between two adjacent theoretical coordinates; And establishing an offset relation between the actual coordinate and the theoretical coordinate according to the first offset size, the second offset size, the offset value and the offset angle. Further, the step of correcting the set path according to the offset relationship and obtaining a start coordinate so that the alignment accuracy of the second pattern formed by the set path and the corresponding first pattern meets a set standard includes: When the deviation value exceeds a set range, the electronic drawing is enlarged or reduced to enable the size of the second graph formed by the set path