CN-121069136-B - Quality detection system and equipment for field effect transistor

CN121069136BCN 121069136 BCN121069136 BCN 121069136BCN-121069136-B

Abstract

The invention belongs to the technical field of transistor detection, in particular to a field effect transistor quality detection system and equipment thereof, wherein the system comprises a transistor scanning module, a structural reliability analysis module, a signal excitation generation module, an intelligent characteristic analysis module, a transistor quality evaluation decision module and an interactive alarm terminal; according to the invention, the structural reliability of the field effect transistor is evaluated by analyzing the transistor image through the structural reliability analysis module, various excitation signals suitable for detecting the field effect transistor are generated when the structural reliability signal is generated, the intelligent characteristic analysis module collects various electric parameters and non-electric parameters of the field effect transistor under signal excitation and performs deep analysis, and according to an analysis report and by combining with a preset quality standard and an evaluation model, the field effect transistor is subjected to comprehensive and objective quality evaluation, so that comprehensive, efficient and accurate detection of the field effect transistor is realized, and the quality detection level and the production efficiency are improved.

Inventors

WANG JUNBIN
Wu Mianxuan
WANG JUNHAO
LIU ZHIHAO
LIANG KENING
HE HAOYANG

Assignees

广东欧芯微电子有限公司

Dates

Publication Date: 20260508
Application Date: 20250818

Claims (8)

1. The field effect transistor quality detection system is characterized by comprising a transistor scanning module, a structure reliability analysis module, a signal excitation generation module, an intelligent feature analysis module, a transistor quality evaluation decision module and an interactive alarm end, wherein the transistor scanning module performs appearance scanning on a field effect transistor, and the structure reliability analysis module analyzes on the basis of transistor images to evaluate the structure reliability of the field effect transistor so as to generate a structure reliable signal or a structure unreliable signal; When a reliable signal of a structure is generated, a signal excitation generation module generates various excitation signals suitable for detection of a field effect transistor, an intelligent characteristic analysis module acquires various electrical parameters and non-electrical parameters of the field effect transistor under signal excitation, and performs deep analysis on acquired data to extract key performance characteristics of the field effect transistor; the specific analysis process of the structural reliability analysis module comprises the following steps: Acquiring a transistor image and comparing the transistor image with a corresponding standard image in a contour overlapping manner, acquiring the contour overlapping ratio of the field effect transistor according to the contour overlapping ratio, and generating a structural unreliable signal of the corresponding field effect transistor if the contour overlapping ratio does not exceed a preset contour overlapping ratio threshold value; the specific analysis process of the defect identification decision analysis is as follows: Based on defects existing on the surface of the transistor image capturing field effect transistor, collecting detection data of various parameters of corresponding defects, comparing the detection data of various parameters with corresponding preset data safety thresholds, and if the detection data exceeds the parameters corresponding to the preset data safety thresholds, marking the corresponding defects as deadly defects; If the field effect transistor has no fatal defect, a plurality of sub-detection areas are marked on the field effect transistor, and if the defect is related in the corresponding sub-detection area, the corresponding sub-detection area is marked as a surface dangerous area; acquiring the number of risk areas on the field effect transistor, carrying out ratio calculation on the number of risk areas and the number of sub-detection areas to obtain a risk detection value, carrying out numerical comparison on the risk detection value and a preset risk detection threshold value, and if the risk detection value exceeds the preset risk detection threshold value, generating a structure unreliable signal of the corresponding field effect transistor; If the risk detection value does not exceed the preset risk detection threshold, acquiring an aggregation area of a risk area on the field effect transistor, and marking the corresponding aggregation area as a target area; the method comprises the steps of obtaining the number of risk areas related to corresponding target areas, marking the number of risk areas as risk accumulation values, carrying out numerical comparison on the risk accumulation values and a preset risk accumulation threshold value, and marking the corresponding target areas as risk accumulation areas if the risk accumulation values exceed the preset risk accumulation threshold value; The method comprises the steps of obtaining the number of aggregation hidden danger areas on corresponding field effect transistors, marking the number as an aggregation hidden danger value, marking the aggregation value with the largest value as a risk aggregation value, obtaining a structure reliable influence value through weighted summation calculation of a risk detection value, the aggregation hidden danger value and the risk aggregation value, comparing the structure reliable influence value with a preset structure reliable influence threshold value, generating a structure unreliable signal of the corresponding field effect transistors if the structure reliable influence value exceeds the preset structure reliable influence threshold value, and generating a structure reliable signal of the corresponding field effect transistors if the structure reliable influence value does not exceed the preset structure reliable influence threshold value.
2. The system of claim 1, wherein the signal excitation generation module determines the type of the excitation signal according to the type and the detection requirement of the field effect transistor, controls the signal parameters by combining an internal signal generation circuit with a digital signal processing technology, and outputs the generated excitation signal to the intelligent characteristic analysis module after amplification and buffering.
3. The system according to claim 1, wherein the intelligent feature analysis module is configured to receive the excitation signal output by the signal excitation generating module, apply the excitation signal to the field effect transistor to be detected, collect various parameters of the field effect transistor in real time by using the high-precision sensor and the collection circuit, and perform analog-to-digital conversion on the collected multi-parameter data.
4. The system of claim 3, wherein the intelligent feature analysis module is further configured to perform data preprocessing on the collected multi-parameter data, perform feature extraction on the processed data by using a signal processing algorithm and a machine learning technology, and generate an analysis report including key performance features after feature extraction and analysis, and transmit the analysis report to the transistor quality evaluation decision module.
5. The system of claim 1, wherein the transistor quality evaluation decision module operates as follows: receiving an analysis report generated by an intelligent characteristic analysis module, comparing the analysis report with a preset quality standard stored in the intelligent characteristic analysis module, and calculating a comprehensive quality score by establishing a multi-parameter comprehensive evaluation model and weighting and scoring various performance characteristics of the field effect transistor; according to the comprehensive quality score, the field effect transistors are classified into different quality grades including qualified products, defective products and waste products, and a detailed detection report is generated according to the evaluation result, wherein the detailed detection report comprises the quality grade, the evaluation condition of each performance index and the existing problems and suggestions.
6. The system of claim 1, wherein the structural reliability analysis module and the transistor quality evaluation decision module are both communicatively connected to a transistor production strategy analysis module, and the transistor production strategy analysis module is configured to analyze a production condition of the field effect transistor during a detection period and send a production control qualified signal or a production control abnormal signal to a background management terminal.
7. The fet quality detection system of claim 6, wherein the transistor production strategy analysis module performs the following analysis process: The method comprises the steps of generating a production control abnormal signal if a transistor inferior occupation value exceeds a preset transistor inferior occupation threshold value, obtaining a production strategy influence value by carrying out weighted summation calculation on a fault frequency generation value, a complex pass delay value and a complex pass table condition value if the transistor inferior occupation value exceeds the preset transistor inferior occupation threshold value, generating the production control abnormal signal if the production strategy influence value exceeds the preset production strategy influence threshold value, and generating a production control qualified signal if the transistor inferior occupation value does not exceed the preset transistor inferior occupation threshold value.
8. A field effect transistor quality inspection apparatus employing the field effect transistor quality inspection system of any of claims 1-7.

Description

Quality detection system and equipment for field effect transistor Technical Field The invention relates to the technical field of transistor detection, in particular to a field effect transistor quality detection system and equipment thereof. Background The field effect transistor is a semiconductor device for controlling the current by utilizing the electric field effect, and mainly comprises three electrodes, namely a source electrode, a grid electrode and a drain electrode, wherein the core structure is that a conducting channel is formed on a semiconductor substrate through a specific process, the on-off and the size of the current in the channel are controlled through the grid voltage, and the field effect transistor is used as a key element in an electronic circuit, and the quality of the field effect transistor directly influences the performance and the stability of the whole electronic system; In the technical scheme of the invention, only a detected triode is needed to be inserted into three plug-in interfaces during operation, a singlechip module can respectively control three paths of plug-in circuits, three electrodes of the triode are respectively tested for multiple times after each two paths of conduction, voltage drop analog signals of the corresponding two electrodes are subjected to AD conversion by an analog-to-digital conversion module, a judging unit can judge the type of the triode and the distribution position of the electrodes and output detection data to a display unit, and the detection efficiency is improved while convenience is brought to detection personnel; However, the technical scheme of the invention only focuses on the detection of transistor electrical parameters in the actual application process, can not combine the structural reliability detection and the multi-performance characteristic detection to gradually and comprehensively evaluate the quality condition of the field effect transistor, can not reasonably judge and timely early warn the production control condition of the field effect transistor, is not beneficial to ensuring the production detection efficiency of the field effect transistor and improving the product quality, and has to be improved in the level of intelligence and automation; in view of the above technical drawbacks, a solution is now proposed. Disclosure of Invention The invention aims to provide a quality detection system and equipment for a field effect transistor, which solve the problems that the prior art cannot effectively combine structure reliability detection and multi-performance characteristic detection to gradually and comprehensively evaluate the quality condition of the field effect transistor, cannot reasonably judge and timely early warn the production control condition of the field effect transistor, is not beneficial to ensuring the production detection efficiency of the field effect transistor and improving the product quality, and has low level of intellectualization and automation. In order to achieve the above purpose, the present invention provides the following technical solutions: The field effect transistor quality detection system comprises a transistor scanning module, a structure reliability analysis module, a signal excitation generation module, an intelligent feature analysis module, a transistor quality evaluation decision module and an interactive alarm end, wherein the transistor scanning module scans the appearance of a field effect transistor and sends a transistor image obtained by scanning to the structure reliability analysis module; When a reliable signal of a structure is generated, a signal excitation generation module generates various excitation signals suitable for detection of a field effect transistor to excite different performance characteristics of the field effect transistor, an intelligent characteristic analysis module collects various electric parameters and non-electric parameters of the field effect transistor under signal excitation, deep analysis is carried out on collected data to extract key performance characteristics of the field effect transistor, a transistor quality evaluation decision module comprehensively evaluates the quality of the field effect transistor according to an analysis report provided by the intelligent characteristic analysis module and combines a preset quality standard and an evaluation model, and the transistor quality detection report is sent to an interactive alarm terminal. Further, the signal excitation generation module determines the type of the required excitation signal according to the type and the detection requirement of the field effect transistor, controls the frequency, the amplitude and the duty ratio parameters of the signal through an internal signal generation circuit and combining a digital signal processing technology, and outputs the generated excitation signal to the intelligent characteristic analysis module after amplification and bufferin