CN-121075894-B - Ion implantation apparatus and ion implantation method

CN121075894BCN 121075894 BCN121075894 BCN 121075894BCN-121075894-B

Abstract

The embodiment of the application provides ion implantation equipment and an ion implantation method, wherein the equipment comprises a bearing table used for bearing a semiconductor structure, an ion beam generating system used for generating an ion beam and driving the ion beam to move towards the semiconductor structure, an ion beam blocking system positioned between the ion beam generating system and the bearing table and comprising an ion beam channel with an arc-shaped edge, the ion beam is implanted into the semiconductor structure through the ion beam channel, and a control system used for controlling the bearing table to rotate around a designated rotation center and controlling the ion beam channel to move along the radial direction of the semiconductor structure, so that the ion beam implanted into the semiconductor structure through the ion beam channel forms at least two areas which are distributed along the radial direction of the semiconductor structure and are circular, annular or fan-shaped, and the radian of the areas is matched with that of the arc-shaped edge of the ion beam channel. By the embodiment of the application, the width of the transition region between the adjacent ion implantation regions on the semiconductor structure along the radial direction of the semiconductor structure is reduced.

Inventors

LI JUNHUA
LUO CHENGXIAN

Assignees

合肥晶合集成电路股份有限公司

Dates

Publication Date: 20260505
Application Date: 20251105

Claims (8)

1. An ion implantation apparatus, comprising: a carrier for carrying the semiconductor structure; An ion beam generating system for generating an ion beam and driving the ion beam toward the semiconductor structure; The ion beam blocking system is positioned between the ion beam generating system and the bearing table and comprises at least two first baffles which are distributed along a first sub-blocking direction and can move independently, wherein the first baffles are provided with second edges used for forming ion beam channels; The control system is used for controlling the bearing table to rotate around a designated rotation center and controlling the ion beam channel to move along the radial direction of the semiconductor structure, so that the ion beam injected into the semiconductor structure through the ion beam channel forms at least two areas distributed along the radial direction of the semiconductor structure on the semiconductor structure, wherein at least one area containing the center of the semiconductor structure is zero in ion injection dosage, the area is in a circular shape, an annular shape or a sector-annular shape, the radian of the area is matched with the radian of the arc-shaped edge of the ion beam channel, and the width of the area along the radial direction of the semiconductor structure is matched with the distance between the second edges of the two first baffles.
2. The apparatus of claim 1, wherein the size and shape of each of the regions is determined according to a preset implantation pattern, wherein the region closest to the center of the semiconductor structure has a circular shape and the remaining regions have a circular or sector-shaped shape.
3. The apparatus of claim 1, wherein the control system comprises: the bearing table control unit is used for controlling the rotation speed of the bearing table; An ion beam generation system control unit for controlling the current intensity of the ion beam generated by the ion beam generation system; And the ion beam blocking system control unit is used for controlling the ion beam channel to move along the radial direction of the semiconductor structure.
4. The apparatus of claim 3, wherein a blocking extent of the at least two first baffles in a blocking direction perpendicular to a direction of movement of the ion beam is greater than a scanning extent of the ion beam in the blocking direction.
5. The apparatus of claim 4, wherein the first baffle further has a first edge for determining a blocking range of the ion beam blocking system along the first sub-blocking direction.
6. The apparatus of claim 4, wherein the blocking direction further comprises a second sub-blocking direction, wherein the at least two baffles comprise two second baffles distributed along the second sub-blocking direction, wherein the second baffles have a third edge for determining a blocking range of the ion beam blocking system along the second sub-blocking direction and a fourth edge for forming an ion beam passageway.
7. An ion implantation method, comprising: fixing the semiconductor structure on the bearing table; generating an ion beam with an ion beam generating system and driving the ion beam toward the semiconductor structure; The method comprises the steps of controlling the carrying table to rotate around a designated rotation center by utilizing a control system, controlling at least two first baffles which are distributed along a first sub-blocking direction and can move independently to move along the radial direction of the semiconductor structure, enabling an ion beam which is injected into the semiconductor structure through an ion beam channel formed by the second edge of the first baffles to form at least two areas distributed along the radial direction of the semiconductor structure on the semiconductor structure, wherein the second edge is an arc-shaped edge, at least one ion injection dose of the area containing the center of the semiconductor structure in the at least two areas is zero, the shape of the area is a circle, an annular or a sector-shaped, the radian of the area is matched with the radian of the arc-shaped edge of the ion beam channel, and the width of the area along the radial direction of the semiconductor structure is matched with the distance between the second edges of the two first baffles.
8. The method of claim 7, wherein controlling the stage with the control system to rotate about a designated center of rotation and controlling radial movement of at least two independently movable first baffles distributed along a first sub-blocking direction along the semiconductor structure such that an ion beam that is implanted into the semiconductor structure via ion beam channels formed by second edges of the first baffles forms at least two regions on the semiconductor structure distributed along the radial direction of the semiconductor structure comprises: Repeating the sub-steps until the at least two regions are formed on the semiconductor structure, the sub-steps comprising: Acquiring a preset implantation pattern, wherein the preset implantation pattern is used for indicating the shape, the size and the preset ion implantation dosage of the at least two areas; The method comprises the steps of controlling a bearing table to rotate around a designated rotation center by utilizing a control system, and controlling an ion beam channel to move to a position corresponding to a first area indicated by a preset implantation pattern along the radial direction of a semiconductor structure, so that the ion beam is implanted into the semiconductor structure through the ion beam channel to form a first ion implantation area, wherein the preset ion implantation dosage of the first area is larger than zero; determining the ion implantation dosage of the first ion implantation area according to the rotation speed of the bearing table, the current intensity of the ion beam and the implantation time of the ion beam for implanting the semiconductor structure, taking the first ion implantation area as the first area and controlling the ion beam channel to move to a position corresponding to a second area indicated by the preset implantation pattern along the radial direction of the semiconductor structure when the ion implantation dosage of the first ion implantation area reaches the preset ion implantation dosage of the first area, wherein the preset ion implantation dosage of the second area is larger than zero, and the position corresponding to the second area is different from the position corresponding to the first area.

Description

Ion implantation apparatus and ion implantation method Technical Field The embodiment of the application relates to the technical field of semiconductor manufacturing, in particular to ion implantation equipment and an ion implantation method. Background In advanced semiconductor processing, to improve the performance and reliability of semiconductor devices, regional ion implantation is generally used to adjust the electrical characteristics of different regions on the entire wafer. Specifically, by injecting ions with different dosages or different types into different areas, the ion doping concentration or the conductivity type of the different areas is changed, and the optimization of the performance parameters of the semiconductor device such as threshold voltage, carrier mobility and the like is realized. However, researchers find that in the process of performing region ion implantation on a wafer by using the method provided by the prior art, in the adjusted wafer obtained by region ion implantation, the boundary between adjacent ion implantation regions is relatively blurred, that is, the width of the transition region between adjacent ion implantation regions along the radial direction of the wafer is relatively large, so that the process requirement of adjusting the ion doping concentration of different regions is difficult to meet. Disclosure of Invention In view of this, various embodiments of the present application provide an ion implantation apparatus and an ion implantation method to reduce the width of a transition region between adjacent ion implantation regions on a wafer in the radial direction of the wafer. In one aspect, one embodiment of the application provides an ion implantation apparatus comprising a stage for carrying a semiconductor structure, an ion beam generating system for generating an ion beam and driving the ion beam towards the semiconductor structure, an ion beam blocking system located between the ion beam generating system and the stage, the ion beam blocking system comprising an ion beam channel having arcuate edges through which the ion beam is implanted into the semiconductor structure, a control system for controlling rotation of the stage about a specified center of rotation and controlling radial movement of the ion beam channel along the semiconductor structure such that the ion beam implanted into the semiconductor structure through the ion beam channel forms at least two regions on the semiconductor structure distributed along the radial direction of the semiconductor structure, wherein the regions are circular, annular or fan-shaped in shape, and wherein the arc of the regions matches the arc of the arcuate edges of the ion beam channel. Optionally, the ion implantation dose of at least one of the at least two regions is zero. Optionally, the size and shape of each region are determined according to a preset implantation pattern, wherein the region closest to the center of the semiconductor structure is circular in shape, and the remaining regions are annular or sector-annular in shape. Optionally, the control system comprises a bearing table control unit for controlling the rotation speed of the bearing table, an ion beam generation system control unit for controlling the current intensity of the ion beam generated by the ion beam generation system, and an ion beam blocking system control unit for controlling the radial movement of the ion beam channel along the semiconductor structure. The ion beam blocking system comprises at least two baffles capable of moving independently, and the ion beam blocking system control unit is used for controlling the baffles to move so that gaps between the at least two baffles form the ion beam channel, wherein the blocking range of the at least two baffles along the blocking direction perpendicular to the moving direction of the ion beam is larger than the scanning range of the ion beam along the blocking direction. Optionally, the blocking direction comprises a first sub-blocking direction, the at least two baffles comprise two first baffles distributed along the first sub-blocking direction, the first baffles comprise a first edge for determining a blocking range of the ion beam blocking system along the first sub-blocking direction and a second edge for forming an ion beam channel, and the second edge is an arc-shaped edge. Optionally, the blocking direction further comprises a second sub-blocking direction, the at least two baffles comprise two second baffles distributed along the second sub-blocking direction, and the second baffles have a third edge for determining a blocking range of the ion beam blocking system along the second sub-blocking direction and a fourth edge for forming an ion beam channel. In another aspect, one embodiment of the application provides an ion implantation method comprising securing a semiconductor structure to a carrier, generating an ion beam with an ion beam generating system and drivi