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CN-121096894-B - Semiconductor process chamber, levelness and/or neutrality detection method, semiconductor processing apparatus, and storage medium

CN121096894BCN 121096894 BCN121096894 BCN 121096894BCN-121096894-B

Abstract

The invention relates to the technical field of semiconductor processing, in particular to a semiconductor process chamber, a levelness and/or neutrality detection method, semiconductor processing equipment and a storage medium. The semiconductor process chamber comprises a cavity, a plurality of groups of distance measuring sensors and a plurality of groups of measuring sensors, wherein the cavity is internally provided with an object to be measured, the plurality of groups of distance measuring sensors are arranged on the inner side wall of the cavity at intervals along the height direction of the cavity, each group of distance measuring sensors comprises a plurality of distance measuring sensors, the plurality of distance measuring sensors are arranged at intervals along the circumferential direction of the cavity, the plurality of distance measuring sensors in each group are positioned on the same horizontal plane, and the levelness and/or the centering of the object to be measured are detected by the plurality of groups of distance measuring sensors. The invention can realize the centering and levelness of the installation of each component in the online detection chamber and the centering and levelness in the movement process, and improve the detection accuracy.

Inventors

  • TU TIANYOU

Assignees

  • 北京集成电路装备创新中心有限公司

Dates

Publication Date
20260512
Application Date
20250811

Claims (11)

  1. 1. A semiconductor process chamber, comprising: the cavity is internally provided with a measured object; The plurality of sets of distance measuring sensors are arranged on the inner side wall of the cavity, the plurality of sets of distance measuring sensors are arranged at intervals along the height direction of the cavity, each set of distance measuring sensors comprises a plurality of distance measuring sensors, the plurality of distance measuring sensors are arranged at intervals along the circumferential direction of the cavity, and the plurality of distance measuring sensors in each set are positioned on the same horizontal plane; Detecting levelness and/or centering of the detected object by utilizing a plurality of groups of distance measuring sensors; When a plurality of sets of distance measuring sensors are used for detecting the levelness of the measured object, the distance between each set of distance measuring sensors and the edges of the measured object at different heights is respectively obtained by the plurality of sets of distance measuring sensors, and the obtained plurality of sets of distance values are compared to judge whether the levelness of the measured object meets the requirement; when a plurality of groups of ranging sensors are used for detecting the centering of the measured object, the plurality of ranging sensors in each group are used for respectively acquiring the distances between the ranging sensors and the corresponding edges of the measured object, and the acquired plurality of distance values are compared to judge whether the centering of the measured object meets the requirement; the method for detecting levelness or centering comprises two states, wherein the two states comprise a static state and a dynamic state; in the static state, the semiconductor process chamber is in a process state ready to be executed, and the object to be tested is a static piece; In the dynamic state, the semiconductor process chamber is in an executing process state, and the object to be measured is a dynamic piece.
  2. 2. The semiconductor process chamber of claim 1, wherein the ranging sensor comprises a laser ranging sensor; The outside of cavity is equipped with controlling means, controlling means with laser rangefinder sensor signal connection is used for receiving and handling the signal that laser rangefinder sensor will send.
  3. 3. The semiconductor process chamber of claim 1, wherein a number of the plurality of sets of ranging sensors is greater than or equal to 3; and/or the number of the ranging sensors in each group of the ranging sensors is more than or equal to 4; and/or, in the height direction of the cavity, the distance between two adjacent groups of distance measuring sensors is 5 cm-10 cm; And/or, the cavity comprises a bottom wall and a plurality of side walls, the side walls are sequentially connected and are arranged around the bottom wall to form a process cavity, an included angle structure is formed between two adjacent side walls, and each ranging sensor in each group is respectively positioned at each included angle structure.
  4. 4. A semiconductor process chamber according to any one of claims 1 to 3, wherein the object to be measured comprises a target, the target being located at an upper end of the interior of the chamber; And/or the object to be measured comprises a base, and the base is positioned at the lower end of the cavity; And/or the object to be measured comprises a substrate, and the substrate is positioned on a base in the cavity; and/or the measured object comprises a process component, the process component comprises a shielding lining, a shielding ring and a deposition ring, the shielding lining is arranged in the cavity, the shielding ring is arranged in the shielding lining in a lifting manner, and the deposition ring is arranged around a base in the cavity.
  5. 5. A method for detecting levelness and/or neutrality, applied to a semiconductor process chamber according to any one of claims 1-4, comprising: the distance between each distance measuring sensor and the corresponding edge of the measured object is obtained by utilizing a plurality of distance measuring sensors in each group, and the obtained distance values are compared to judge whether the centering of the measured object meets the requirement or not The distance between each group of distance measuring sensors and the edges of the measured object at different heights is obtained by utilizing the plurality of groups of distance measuring sensors, the obtained plurality of groups of distance values are compared, and whether the levelness of the measured object meets the requirement is judged; the method comprises two states, including a static state and a dynamic state; in the static state, the semiconductor process chamber is in a process state ready to be executed, and the object to be tested is a static piece; In the dynamic state, the semiconductor process chamber is in an executing process state, and the object to be measured is a dynamic piece.
  6. 6. The method for detecting levelness and/or neutrality according to claim 5, characterized in that in the static state, the distance measuring sensor measures the distance between the distance measuring sensor and the edge of the measured object in a rotational scanning manner; And/or in the dynamic state, the distance measuring sensor dynamically tracks the measured object, samples the measured object at a frequency not lower than 10 times/second, and records the distance between each point of the movement track of the measured object.
  7. 7. The method for detecting levelness and/or neutrality according to claim 5 or 6, wherein determining whether the centering of the measured object satisfies a requirement in the static state comprises: Obtaining the difference value between different distance values of the same level, if the maximum difference value is less than or equal to a threshold value, the centering of the measured object meets the requirement, otherwise, the centering of the measured object does not meet the requirement; And/or in the static state, judging whether the levelness of the measured object meets the requirement comprises the following steps: And acquiring a plurality of groups of distance values of layers with different heights, wherein each group of distance values comprises the distances from the distance measuring sensors with different heights to the corresponding edges of the measured object, if the distance changes of the layers with different heights are consistent, the levelness of the measured object meets the requirement, otherwise, the requirement is not met.
  8. 8. The method for detecting levelness and/or neutrality according to claim 5 or 6, wherein determining whether the centering of the measured object meets the requirement in the dynamic state comprises: if the distance changes measured by the different ranging sensors with the same level are synchronous and stable, the requirement of the measured object on the centering is met; if the distance measured by any ranging sensor suddenly increases or decreases, the centering of the measured object is not satisfied; And/or in the dynamic state, judging whether the levelness of the measured object meets the requirement comprises the following steps: if the track variances measured by different ranging sensors with the same level are less than or equal to the preset value, the levelness of the measured object is satisfied, otherwise, the requirement is not satisfied.
  9. 9. The method for detecting levelness and/or neutrality according to claim 5 or 6, characterized in that, in the static state, after determining whether the centering and/or levelness of the measured object meets the requirements, the method further comprises: If the requirements are met, the semiconductor process chamber executes the process, and if the requirements are not met, the semiconductor process chamber does not execute the process; and/or in the dynamic state, after judging whether the centering and/or levelness of the measured object meets the requirements, the method further comprises: if the requirements are met, the semiconductor process chamber continues to execute the process, and if the requirements are not met, the semiconductor process chamber stops executing the process.
  10. 10. A semiconductor processing apparatus comprising the semiconductor processing chamber of any one of claims 1-4.
  11. 11. A computer readable storage medium having stored thereon computer instructions, which when executed by a controller, implement a levelness and/or neutrality detection method according to any one of claims 5 to 9.

Description

Semiconductor process chamber, levelness and/or neutrality detection method, semiconductor processing apparatus, and storage medium Technical Field The present invention relates to the field of semiconductor processing technology, and in particular, to a semiconductor processing chamber, a method for detecting levelness and/or neutrality, a semiconductor processing apparatus, and a storage medium. Background Physical Vapor Deposition (PVD) technology is a widely used type of thin film fabrication technology in the semiconductor industry, and generally refers to a thin film fabrication process that employs physical methods to fabricate thin films. In the integrated circuit manufacturing industry, the magnetron sputtering technology is a very important process flow in the integrated circuit manufacturing process, and is mainly applied to the deposition of various films in a chip. With the recent change in technology in the integrated circuit manufacturing industry, the centering and levelness of the installation of components within a reaction chamber and the centering and levelness during movement are also increasing. In the reaction chamber, if neutrality or levelness of some components is not guaranteed, not only the process result is affected, but also problems such as fragments and hardware damage can be caused. In the related art, levelness of the detection assembly is generally performed by a level gauge or a horizontal bubble. The centring is usually calibrated with calipers or plugs. However, it is disadvantageous in that for the detection of levelness, only static levelness can be detected when the chamber is not closed, and levelness of the component during real-time movement and levelness of the wafer cannot be detected. For neutral detection, because the cavity structure is complex, the shape of each component is different, and accurate calibration cannot be met through the measuring instrument. Disclosure of Invention The invention aims to provide a semiconductor process chamber, a levelness and/or neutrality detection method, semiconductor processing equipment and a storage medium, which can at least relieve the problem that the current levelness or the centering detection mode is single or the accuracy is insufficient, realize the on-line detection of the neutrality and levelness of components in the process chamber and ensure the safety of process results and the components. In a first aspect, the present invention provides a semiconductor process chamber comprising: the cavity is internally provided with a measured object; The plurality of sets of distance measuring sensors are arranged on the inner side wall of the cavity, the plurality of sets of distance measuring sensors are arranged at intervals along the height direction of the cavity, each set of distance measuring sensors comprises a plurality of distance measuring sensors, the plurality of distance measuring sensors are arranged at intervals along the circumferential direction of the cavity, and the plurality of distance measuring sensors in each set are positioned on the same horizontal plane; And detecting levelness and/or centering of the detected object by utilizing a plurality of groups of distance measuring sensors. In some optional embodiments, the ranging sensor comprises a laser ranging sensor, and a control device is arranged on the outer side of the cavity and is in signal connection with the laser ranging sensor and used for receiving and processing signals to be sent by the laser ranging sensor. In some alternative embodiments, the number of sets of the ranging sensors is greater than or equal to 3. In some alternative embodiments, the number of the ranging sensors included in each group of the ranging sensors is equal to or greater than 4. In some optional embodiments, in the height direction of the process chamber, a distance between two adjacent sets of distance measuring sensors is 5cm to 10cm. In some optional embodiments, the cavity includes a bottom wall and a plurality of side walls, and the plurality of side walls are connected in sequence and are arranged around the bottom wall to form a process cavity, an included angle structure is formed between two adjacent side walls, and each ranging sensor in each group is respectively located at each included angle structure. In some alternative embodiments, the object to be measured comprises a target located at an upper interior end of the cavity. In some alternative embodiments, the object to be measured comprises a base, which is located at the inner lower end of the cavity. In some alternative embodiments, the object under test comprises a substrate that is positioned on a base inside the cavity. In some optional embodiments, the object to be measured includes a process kit including a shielding liner disposed within the cavity, a shielding ring liftably disposed within the shielding liner, and a deposition ring disposed around a base within the cavity. In a secon