CN-121141769-B - Method for regulating and controlling electrical properties of semiconductor material in high-voltage-temperature coupling field

Abstract

The invention discloses a method for regulating and controlling electrical properties of a semiconductor material under a high-voltage-temperature coupling field, which belongs to the technical field of high-voltage regulation and control and comprises the following steps of S1, cutting and cleaning the semiconductor material, establishing a lattice orientation-initial electrical property individual file, S2, constructing a high-voltage-temperature coupling field regulating and controlling device, S3, installing a semiconductor sample, carrying out initial parameter dynamic correction calculation, carrying out self-adaptive control on contact pressure, S4, heating and boosting to the corrected initial temperature and initial pressure, detecting the electrical property and the contact pressure in real time after stabilization, regulating the contact pressure to reach standards and stabilizing for 30-60 minutes, S5, reducing the pressure to normal pressure, recording a lattice orientation residual deviation angle theta', reducing the temperature to room temperature, and carrying out surface cleaning and electrical property reinspection on the sample. The invention combines the high voltage-temperature coupling field and real-time feedback, and realizes the accurate, stable and nondestructive regulation and control of the electrical property of the semiconductor material.

Inventors

• WU BAOJIA
• GU GUANGRUI
• TIAN LIANHUA
• Wu Fangrun
• Zhuang Teng
• GAO YANG

Assignees

• 延边大学

Dates

Publication Date

20260512

Application Date

20250910

Claims (3)

1. 1. The method for regulating and controlling the electrical properties of the semiconductor material in the high-voltage-temperature coupling field is characterized by comprising the following steps of: S1, cutting and cleaning a semiconductor material, and establishing a 'lattice orientation-initial electrical property' individual file; Selecting a semiconductor material to be regulated and controlled, cutting the semiconductor material into a sheet sample with the size of 5mm multiplied by 0.1mm multiplied by 20mm multiplied by 1mm, ensuring that the surface of the sample is defect-free, sequentially adopting deionized water, ethanol and acetone for ultrasonic cleaning when the sample is subjected to cleaning treatment, wherein the cleaning time is 5-15 minutes each time, removing greasy dirt and impurities on the surface of the sample, and placing the sample in a vacuum drying oven after the cleaning is finished, and drying the sample at the temperature of 60-100 ℃ for 2-4 hours to avoid the influence of moisture on the subsequent regulation and control process; Detecting the lattice orientation of the sample by a polarized light microscope, detecting the initial electrical property at room temperature by a Hall effect tester, recording the initial resistivity rho 0 and the initial carrier concentration n 0 , and establishing an individual file of the lattice orientation-initial electrical property; S2, building a high-voltage-temperature coupling field regulation and control device; in S2, the high-voltage-temperature coupling field regulation and control device comprises a high-voltage generation module, a temperature control module, an electrical property detection module, a sample fixing module and a data processing and feedback module, wherein the data processing and feedback module is electrically connected with the high-voltage generation module, the temperature control module, the electrical property detection module and the sample fixing module; The high-pressure generating module adopts a diamond anvil cell high-pressure device or a plurality of anvils high-pressure devices to provide controllable pressure of 0-10GPa, and the pressure control precision is +/-0.01 GPa; The temperature control module adopts a surrounding type resistance heating furnace or a laser heating system, the heating range is-196 ℃ to 800 ℃, the temperature control precision is +/-1 ℃, and the uniformity error of a temperature field in a sample area is not more than +/-2 ℃; the electrical property detection module adopts a four-probe tester or a Hall effect tester to detect the resistivity, the carrier concentration and the carrier mobility of a sample in real time; The sample fixing module is made of high-temperature and high-pressure resistant alumina ceramic, integrates a micro-displacement orientation adjusting component and a contact pressure buffer layer, and realizes lattice orientation alignment and contact pressure stabilization, wherein the micro-displacement orientation adjusting component comprises an X/Y/Z three-axis adjusting platform and is matched with a corresponding rotation adjusting unit, and the contact pressure buffer layer is a nickel-based elastic film with the thickness of 20-50 mu m; S3, installing a semiconductor sample, performing initial parameter dynamic correction calculation, and performing self-adaptive control on contact pressure; S3, mounting a semiconductor sample, namely placing the pretreated sample on a contact pressure buffer layer of a sample fixing module, starting a polarized light positioning system, namely calling lattice orientation data through a sample individual file, comparing the pressure loading direction of a high-voltage generating module, and calculating an initial deviation angle theta of the lattice orientation; In S3, the initial parameter dynamic correction calculation is specifically that the data processing and feedback module imports the sample initial electrical property individual file and the target performance parameter, and dynamically corrects the initial pressure P 0 and the initial temperature T 0 according to the following logic: Calculating initial performance deviation: ; ; Wherein, the Ρ is the initial resistivity deviation, ρ target is the target resistivity, N is the initial carrier concentration deviation, n target is the target carrier concentration; Parameter correction rules: if Δρ >15% and Δn >15%: P 0 =P base ×(1-Δρ×0.02),T 0 =T base ×(1+Δn×0.03); Wherein P base is the material base initial pressure, T base is the material base initial temperature; if Δρ < -10% and Δn < -10%: P 0 =P base ×(1-Δρ×0.01),T 0 =T base ×(1+Δn×0.02); If Δρ, Δn is within ±10%: P 0 =P base ,T 0 =T base ; Boundary checking, namely ensuring that P 0 is less than or equal to 80% of the ultimate compressive strength of the material, and T 0 is less than or equal to 70% of the thermal decomposition temperature of the material, so as to avoid damage to the material caused by overhigh initial parameters; In S3, the contact pressure is adaptively controlled, namely, the position of a probe of an electrical property detection module is adjusted to enable the probe to be in contact with the surface of a sample, a contact pressure threshold value is set by a data processing module, the contact pressure is fed back by a miniature pressure sensor in real time, if the actual pressure is lower than the threshold value, the sample fixing module is driven to increase the pressure, if the actual pressure is higher than the threshold value, the contact pressure is reversely fine-tuned until the contact pressure is stabilized within a threshold value range, the contact resistance is less than 0.5 omega, the contact pressure is continuously monitored for 3 minutes, and after the contact state is ensured to be stable, the next regulation and control are carried out; s4, heating and boosting to the corrected initial temperature and initial pressure, detecting the electrical property and contact pressure in real time after stabilizing, adjusting parameters to reach standards and stabilizing for 30-60 minutes; S4, specifically: Starting a high-pressure generating module, slowly increasing the pressure to the corrected initial pressure P 0 according to the speed of 0.01-0.1GPa/min, receiving the orientation data of the micro-displacement orientation adjustment assembly in real time by a data processing module in the process, and automatically suspending the pressure increasing and finely adjusting the angle of a sample if theta is more than 1 DEG due to pressure loading so as to ensure the alignment precision; starting a temperature control module, heating to a corrected initial temperature T 0 according to a speed of 5-20 ℃ per minute, and optimizing the speed by combining the initial resistivity rho 0 in the heating process, wherein if rho 0 ＞2ρ target , the heating speed is increased to 15-20 ℃ per minute, and carrier activation is accelerated, if rho 0 ＜0.8ρ target , the heating speed is reduced to 5-10 ℃ per minute, so that carrier overexcitation is avoided; after the pressure and the temperature reach the initial set values, the coupling field is kept stable for 10-30 minutes, so that the internal structure of the sample reaches an equilibrium state; The electrical performance parameters of the sample are detected in real time through the electrical performance detection module, the detection frequency is 1-5 minutes/time, meanwhile, the miniature pressure sensor continuously monitors the contact pressure, and detection data are transmitted to the data processing and feedback module in real time; the data processing and feedback module compares the electrical performance parameters detected in real time with target parameters; s5, reducing the pressure to normal pressure, recording the residual deviation angle theta' of the lattice orientation, reducing the temperature to room temperature, and carrying out surface cleaning and electrical property rechecking on the sample.
2. 2. The method for regulating and controlling the electrical properties of a semiconductor material in a high-voltage-temperature coupling field according to claim 1, wherein when the electrical property parameter detected in real time is compared with a target parameter, if the real-time resistivity is higher than the target resistivity and the carrier concentration is lower than the target carrier concentration, the pressure is increased by 0.05-0.2GPa or the temperature is increased by 10-30 ℃ under the premise that the pressure does not exceed the ultimate compressive strength of the material and the temperature does not exceed the thermal decomposition temperature of the material until the resistivity and the carrier concentration reach the target range, and if the real-time carrier mobility is lower than the target mobility and the resistivity is higher than the target resistivity, the pressure is reduced by 0.05-0.1GPa or the temperature is reduced by 5-15 ℃ until the migration rate and the resistivity reach the target range, the current pressure and the temperature parameter are kept for 30-60 minutes, and stable performance is ensured.
3. 3. The method for regulating and controlling the electrical properties of a semiconductor material in a high-voltage-temperature coupling field according to claim 1, wherein in S5, when the electrical property parameter of a sample is stable to reach a target value and is kept for more than 30 minutes, the application of the coupling field is stopped, namely, firstly, the pressure is reduced to normal pressure at a rate of 0.05-0.2GPa/min, the residual deviation angle theta' of lattice orientation is recorded in the process, and then, the temperature is reduced to room temperature at a rate of 10-30 ℃/min; and after the temperature is reduced to the room temperature, taking out the sample from the sample fixing module, and carrying out surface cleaning and electrical property rechecking on the sample, wherein the overall electrical property uniformity and the lattice integrity are mainly detected, and the repeatability errors of the alignment group and the alignment non-alignment group are compared, so that the regulation and control effect is ensured to meet the requirements.

Description

Method for regulating and controlling electrical properties of semiconductor material in high-voltage-temperature coupling field Technical Field The invention relates to the technical field of high-voltage regulation and control, in particular to a method for regulating and controlling the electrical properties of a semiconductor material under a high-voltage-temperature coupling field. Background The electrical properties of semiconductor materials are the core factors for determining the performance of semiconductor devices, and the current methods for regulating the electrical properties of semiconductor materials in industry mainly comprise doping regulation, epitaxial growth regulation, ion implantation regulation and the like. The doping regulation and control method comprises the steps of introducing impurity atoms into a semiconductor material to change carrier concentration, wherein lattice defects are easy to introduce, so that material stability is reduced, epitaxial growth regulation and control can realize material lattice matching, but the preparation process is complex, the cost is high, later-stage electrical property adjustment is difficult to carry out on a prepared semiconductor device, and the problems that the implantation depth is difficult to accurately control, material structural damage is easy to cause in subsequent annealing treatment and the like exist in ion implantation regulation and control. In recent years, high-pressure regulation and temperature regulation have been attracting attention as an emerging physical regulation means. The high-voltage regulation and control can regulate the interatomic interaction by changing the lattice spacing of the semiconductor material so as to influence the carrier transport characteristic, and the temperature regulation and control can regulate the carrier concentration and mobility by changing the thermal motion state of the carrier. However, in the prior art, high-voltage regulation and temperature regulation are used independently, and cooperative coupling of the high-voltage regulation and the temperature regulation is not achieved. When the temperature is regulated and controlled independently, the high temperature is easy to cause the growth of crystal grains of the material, damage the microstructure of the material and simultaneously difficult to realize the accurate intervention on the carrier transport path. In addition, the conventional regulation and control method has the key defects that firstly, the lattice anisotropy of the semiconductor material (such as 20% of pressure response difference between the orientation of silicon <100> and the orientation of silicon <111 >) is not considered, the regulation and control repeatability is poor due to dislocation between the high-voltage loading direction and the lattice orientation, secondly, the initial parameters are only set to be fixed according to the material types, the actual initial electrical properties (such as initial resistivity deviation) after the pretreatment of the uncombined sample are dynamically regulated, the regulation and control overshoot is easy to occur, thirdly, the contact between the probe and the sample depends on rigid lamination, and the contact pressure fluctuation (+ -0.2N) causes unstable contact resistance (+ -0.3 omega) to influence the detection precision. Meanwhile, due to the lack of a real-time monitoring feedback mechanism, the regulation precision is low, the repeatability is poor, and the requirements of high-performance semiconductor devices are difficult to meet. Disclosure of Invention The invention aims to provide a method for regulating and controlling the electrical properties of a semiconductor material under a high-voltage-temperature coupling field, which combines the high-voltage-temperature coupling field with real-time feedback, and can realize the accurate, stable and nondestructive regulation and control of the electrical properties of the semiconductor material. In order to achieve the above purpose, the invention provides a method for regulating and controlling the electrical properties of a semiconductor material in a high-voltage-temperature coupling field, which comprises the following steps: S1, cutting and cleaning a semiconductor material, and establishing a 'lattice orientation-initial electrical property' individual file; S2, building a high-voltage-temperature coupling field regulation and control device; S3, installing a semiconductor sample, performing initial parameter dynamic correction calculation, and performing self-adaptive control on contact pressure; s4, heating and boosting to the corrected initial temperature and initial pressure, detecting the electrical property and contact pressure in real time after stabilizing, adjusting parameters to reach standards and stabilizing for 30-60 minutes; s5, reducing the pressure to normal pressure, recording the residual deviation angle theta' of the lattice orienta