CN-121173230-B - Low-noise amplifier and receiving system

CN121173230BCN 121173230 BCN121173230 BCN 121173230BCN-121173230-B

Abstract

The invention discloses a low noise amplifier and a receiving system, wherein the low noise amplifier comprises an input matching circuit, a first-stage circuit, an interstage matching circuit, a second-stage circuit, an output matching circuit and a common bias circuit, wherein the input matching circuit is connected with the first-stage circuit and the common bias circuit, the interstage matching circuit is connected with the first-stage circuit and the second-stage circuit, the second-stage circuit is connected with the common bias circuit and the output matching circuit, the common bias circuit is connected with a power supply, a power supply voltage is connected with the first-stage circuit and the second-stage circuit, and for the two-stage amplifying circuit for amplifying signals, the active bias structure of the common bias circuit effectively reduces the whole area of a chip and reduces the coupling and parasitic risks of the components due to layout, wiring and other factors under the limited plate area.

Inventors

ZHAO TING
LIN SHAOXIN
Zhang Yangxiang
LIU YANPENG
WANG XIN
WANG RIYAN
YANG KUNMING

Assignees

广州润芯信息技术有限公司

Dates

Publication Date: 20260505
Application Date: 20251117

Claims (8)

1. The low noise amplifier is characterized by comprising an input matching circuit, a primary circuit, an interstage matching circuit, a secondary circuit, an output matching circuit and a shared bias circuit, wherein the input matching circuit is connected with the primary circuit and the shared bias circuit, the interstage matching circuit is connected with the primary circuit and the secondary circuit, the secondary circuit is connected with the shared bias circuit and the output matching circuit, the shared bias circuit is connected with a power supply, and a power supply voltage is connected with the primary circuit and the secondary circuit; The interstage matching circuit comprises a second resistor, a third capacitor, a fourth capacitor and a fifth inductor, wherein the third capacitor is connected with the fourth capacitor, the fifth inductor and the primary circuit, the fourth capacitor is connected with the secondary circuit, the fifth inductor is grounded through the second resistor, and the second resistor is used for expanding bandwidth; The common bias circuit comprises a third transistor, a third resistor, a fourth resistor, a fifth resistor, a sixth capacitor, a seventh capacitor and a sixth resistor, wherein the grid electrode of the third transistor is connected with the drain electrode of the third transistor, the third resistor and the fourth resistor, the source electrode of the third transistor is grounded, the third resistor is connected with the power supply, the fourth resistor is connected with the fifth resistor and the sixth capacitor, the fifth resistor and the sixth capacitor are grounded, the sixth capacitor is connected with the seventh capacitor, the sixth resistor and the input matching circuit, the seventh capacitor is grounded, the sixth resistor is connected with the second-stage circuit, the sixth capacitor is used for realizing choke to alternating current signals and discharging to the ground, the direct current components are generated by the crystal rectification of the first-stage circuit, the first-stage transistor is used for realizing the harmonic wave-raising circuit GAAS PHEMT, and the second-stage circuit is used for realizing the harmonic wave-raising circuit; the radio frequency signal is subjected to impedance matching through the input matching circuit and then is output into a first-stage signal, the first-stage circuit outputs a first amplified signal according to the first-stage signal under the bias action of the common bias circuit, the first amplified signal is subjected to bandwidth expansion through the inter-stage matching circuit and then is output into a second-stage signal, the second-stage circuit outputs a second amplified signal according to the second-stage signal under the bias action of the common bias circuit, and the output matching circuit performs impedance matching on the second amplified signal and then outputs a radio frequency amplified signal.
2. The low noise amplifier of claim 1, wherein the input matching circuit comprises a first capacitor and a first inductor, the first capacitor is connected to the first inductor and the primary circuit, and the first inductor is connected to the common bias circuit.
3. The low noise amplifier of claim 1, wherein the primary circuit comprises a primary amplifying circuit and a primary biasing circuit, wherein the primary amplifying circuit is connected with the primary biasing circuit, the input matching circuit and the inter-stage matching circuit, and wherein the primary biasing circuit is connected with the power supply voltage.
4. A low noise amplifier according to claim 3, wherein said primary amplifying circuit comprises a first transistor and a second inductor, and said primary biasing circuit comprises a first resistor, a second capacitor, a third inductor and a fourth inductor; The grid electrode of the first transistor is connected with the input matching circuit, the drain electrode of the first transistor is connected with the first resistor and the interstage matching circuit, the source electrode of the first transistor is grounded through the second inductor, the third inductor is connected with the first resistor, the second capacitor and the fourth inductor, the second capacitor is grounded, and the fourth inductor is connected with the power supply voltage.
5. The low noise amplifier of claim 1, wherein the secondary circuit comprises a secondary amplifying circuit and a secondary bias circuit, the secondary amplifying circuit is connected with the secondary bias circuit, the inter-stage matching circuit and the common bias circuit, and the secondary bias circuit is connected with the power supply voltage and the output matching circuit.
6. The low noise amplifier of claim 5, wherein the second stage amplifying circuit comprises a second transistor, and the second stage biasing circuit comprises a fifth capacitor, a sixth inductor, and a seventh inductor; The grid electrode of the second transistor is connected with the interstage matching circuit and the common bias circuit, the drain electrode of the second transistor is connected with the sixth inductor, the source electrode of the second transistor is grounded, the sixth inductor is connected with the seventh inductor and the output matching circuit, the seventh inductor is connected with the fifth capacitor and the power supply voltage, and the fifth capacitor is grounded.
7. The low noise amplifier of claim 1, wherein the output matching circuit comprises an eighth capacitor and an eighth inductor, the eighth capacitor being connected to the eighth inductor and the secondary circuit.
8. A receiving system comprising a low noise amplifier according to any of claims 1-7.

Description

Low-noise amplifier and receiving system Technical Field The present invention relates to the field of satellite communications technologies, and in particular, to a low noise amplifier and a receiving system. Background In the satellite communication field, a low-noise amplifier of a C-band is of great importance, but the low-noise amplifier currently faces a plurality of technical pain points and difficulties. In the low noise amplifier, a passive bias circuit formed by resistors is usually adopted, and is realized through resistor voltage division, so that the structure is simple and easy to implement. However, when the temperature changes, the bias voltage provided by the passive bias circuit formed by the resistor is unchanged, but the process parameters (such as the threshold voltage, mobility, oxide thickness and the like of the transistor) of the transistor in the passive bias circuit change, wherein the change of the threshold voltage of the transistor in the amplifying circuit also changes the working area of the transistor, thereby affecting the on-resistance and the static current. Therefore, for the low noise amplifier of the multistage amplifying cascade circuit, the traditional scheme is to independently set a static working point for each stage of amplifying circuit, and the adopted components are large in number, so that the whole chip area is large, and coupling and parasitic risks caused by factors such as layout and wiring are high under the limited plate area. Disclosure of Invention In order to overcome the defects of the prior art, the invention aims to provide a low-noise amplifier and a receiving system, which can reduce the number of components for the low-noise amplifier of a multistage amplifying cascade circuit, further effectively reduce the whole area of a chip and reduce the coupling and parasitic risks caused by factors such as layout, wiring and the like under the limited plate area. In order to solve the problems, the invention is realized according to the following scheme: The low noise amplifier comprises an input matching circuit, a primary circuit, an interstage matching circuit, a secondary circuit, an output matching circuit and a common bias circuit, wherein the input matching circuit is connected with the primary circuit and the common bias circuit, the interstage matching circuit is connected with the primary circuit and the secondary circuit, the secondary circuit is connected with the common bias circuit and the output matching circuit, the common bias circuit is connected with a power supply, and a power supply voltage is connected with the primary circuit and the secondary circuit; The radio frequency signal is subjected to impedance matching through the input matching circuit and then a first-stage signal is output, the first-stage circuit outputs a first amplified signal according to the first-stage signal under the bias action of the common bias circuit, the first amplified signal is subjected to bandwidth expansion through the inter-stage matching circuit and then a second-stage signal is output, the second-stage circuit outputs a second amplified signal according to the second-stage signal under the bias action of the common bias circuit, and the output matching circuit performs impedance matching on the second amplified signal and then outputs a radio frequency amplified signal. Compared with the prior art, the low-noise amplifier has the beneficial effects that for the two-stage amplifying circuit, namely the primary circuit and the secondary circuit, for amplifying signals, the active biasing structure of the common biasing circuit is adopted, the number of components of the multistage amplifying cascade circuit is reduced, the whole area of a chip is effectively reduced, and the coupling and parasitic risks of the components due to layout, wiring and other factors under the limited plate area are reduced. Optionally, the input matching circuit comprises a first capacitor and a first inductor, wherein the first capacitor is connected with the first inductor and the primary circuit, and the first inductor is connected with the common bias circuit. Optionally, the primary circuit comprises a primary amplifying circuit and a primary biasing circuit, wherein the primary amplifying circuit is connected with the primary biasing circuit, the input matching circuit and the interstage matching circuit, and the primary biasing circuit is connected with the power supply voltage. Optionally, the first-stage amplifying circuit includes a first transistor and a second inductor, and the first-stage biasing circuit includes a first resistor, a second capacitor, a third inductor and a fourth inductor; The grid electrode of the first transistor is connected with the input matching circuit, the drain electrode of the first transistor is connected with the first resistor and the interstage matching circuit, the source electrode of the first transistor is grounded through