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CN-121344568-B - Bearing device, semiconductor process chamber and semiconductor process equipment

CN121344568BCN 121344568 BCN121344568 BCN 121344568BCN-121344568-B

Abstract

The invention discloses a bearing device, a semiconductor process chamber and semiconductor process equipment, and belongs to the technical field of semiconductor process equipment, wherein the bearing device (100) comprises a boat heating piece (140), and a bottom bearing boat (110), a middle bearing boat (120) and a top bearing boat (130) which are sequentially stacked in a first direction, the boat heating piece (140) is arranged on a target bearing boat, and at least one of the bottom bearing boat (110), the middle bearing boat (120) and the top bearing boat (130) is the target bearing boat. The scheme can solve the problem that the temperature of at least part of the bearing boats is slow when the semiconductor process chamber adopts a plurality of bearing boats to be stacked in the background art.

Inventors

  • YANG JIAN
  • YAN ZHISHUN
  • WANG ZHILIANG
  • ZHANG YUHANG
  • FENG JINRUI

Assignees

  • 北京北方华创微电子装备有限公司

Dates

Publication Date
20260512
Application Date
20251217

Claims (20)

  1. 1. A carrier device, characterized by comprising a boat heating element (140), and a bottom carrier boat (110), an intermediate carrier boat (120) and a top carrier boat (130) stacked in order in a first direction, wherein the boat heating element (140) is disposed on a target carrier boat, and at least one of the bottom carrier boat (110), the intermediate carrier boat (120) and the top carrier boat (130) is the target carrier boat; the target carrier boat is provided with a slide space, the target carrier boat comprises a peripheral side wall surrounding the slide space, and the boat heating piece (140) is arranged on the outer side surface of the peripheral side wall; the boat heating element (140) comprises an electrical connection terminal (143), a power supply terminal (230) is at least partially located in a process space (211), the power supply terminal (230) is electrically connected with the electrical connection terminal (143) after the carrying device (100) enters the process space (211), and the power supply terminal (230) is disconnected with the electrical connection terminal (143) after the carrying device (100) moves out of the process space (211).
  2. 2. The carrier of claim 1, wherein the peripheral side walls include two first side walls (121) and two second side walls (122) spatially distributed around the slide, the two first side walls (121) extending in a length direction of the target carrier boat and being opposite, the two second side walls (122) extending in a width direction of the target carrier boat and being opposite, the length direction, the width direction and the first direction being perpendicular to each other, the boat heating member (140) being provided at least on the two first side walls (121) and extending in the length direction along the first side walls (121).
  3. 3. The carrying device according to claim 2, wherein the electrical terminals (143) are located on an outer side surface of the second side wall (122).
  4. 4. The carrier according to claim 1, characterized in that the boat heating element (140) is fastened to the outer surface of the peripheral side wall by means of a fastening element and/or that the outer surface of the peripheral side wall is provided with protruding boat ears (123), the boat heating element (140) being located on the boat ears (123).
  5. 5. The carrying device according to claim 1, characterized in that the boat heating element (140) comprises an insulating housing (141) and an electric heating wire (142) fixed inside the insulating housing (141), the insulating housing (141) being arranged on the target carrying boat.
  6. 6. The carrying device according to claim 1, wherein the electrical connection terminals (143) are provided with electrical connection slots (1431), and the slots of the electrical connection slots (1431) are of flared configuration.
  7. 7. The carrying device according to claim 6, wherein a watchband contact finger (1432) is provided in the electrical connection slot (1431), an electrical connection hole of the watchband contact finger (1432) being opposite to a notch of the electrical connection slot (1431), the watchband contact finger (1432) being in conductive contact with an inner wall of the electrical connection slot (1431).
  8. 8. A semiconductor process chamber, characterized by comprising a chamber body (200) and a carrier device (100) according to any of claims 1-7, the chamber body (200) being provided with a process space (211), the carrier device (100) being provided in the process space (211), the first direction being the height direction of the chamber body (200).
  9. 9. The semiconductor process chamber of claim 8, wherein the chamber body (200) comprises an air intake module (250) and an air exhaust module (260), the air intake module (250) being disposed on a side of the top carrier boat (130) facing away from the intermediate carrier boat (120) and in communication with the process space (211), the air exhaust module (260) being disposed on a side of the bottom carrier boat (110) facing away from the intermediate carrier boat (120) and in communication with the process space (211).
  10. 10. The semiconductor process chamber according to claim 9, wherein the chamber body (200) further comprises a top flow homogenizing plate (270) and/or a bottom flow homogenizing plate (280), wherein the top flow homogenizing plate (270) is located above the top carrier boat (130) and forms a first flow homogenizing space (2111) with the top inner wall of the process space (211), a plurality of first flow homogenizing holes communicated with the first flow homogenizing space (2111) are formed in the top flow homogenizing plate (270), the air inlet module (250) is communicated with the first flow homogenizing space (2111), the bottom flow homogenizing plate (280) is arranged below the bottom carrier boat (110) and forms a second flow homogenizing space (2112) with the bottom inner wall of the process space (211), and a plurality of second flow homogenizing holes communicated with the second flow homogenizing space (2112) are formed in the bottom flow homogenizing plate (280).
  11. 11. The semiconductor process chamber of claim 10, wherein the top flow uniformity plate (270) comprises a first region directly opposite the gas inlet module (250) and a second region offset from the gas inlet module (250), the first region having a distribution density of the first flow uniformity holes that is less than a distribution density of the first flow uniformity holes of the second region, and/or, The bottom uniform flow plate (280) comprises a third area opposite to the exhaust module (260) and a fourth area which is staggered with the exhaust module (260), and the distribution density of the second uniform flow holes of the third area is smaller than that of the fourth area.
  12. 12. The semiconductor process chamber of claim 9, wherein the chamber body (200) further comprises an outer cavity (220) and an inner cavity (210), the inner cavity (210) is disposed in the outer cavity (220) and is provided with the process space (211), the first end of the air intake module (250) and the first end of the air exhaust module (260) are respectively and hermetically mounted at corresponding first mounting holes (2211) on the outer cavity (220) and are exposed outside the outer cavity (220), the second end of the air intake module (250) and the second end of the air exhaust module (260) are respectively and hermetically mounted at corresponding second mounting holes (2131) on the inner cavity (210) and are communicated with the process space (211), and a sealed space (212) is formed between the inner cavity (210) and the outer cavity (220).
  13. 13. The semiconductor process chamber of claim 12, wherein the outer side port of the second mounting hole (2131) is flush with the outer wall of the inner cavity (210), the chamber body (200) further comprises a cavity heating assembly (240), the cavity heating assembly (240) is sleeved outside the inner cavity (210) and is attached to the outer wall of the inner cavity (210), and the cavity heating assembly (240) is provided with a first avoidance hole (2411) for avoiding the air inlet module (250) and the air outlet module (260).
  14. 14. The semiconductor process chamber of claim 13, wherein the cavity heating assembly (240) comprises a first heating element (241), the inner cavity (210) comprises a first cylinder (213), a first front end cover (214) and a first rear end cover (215) which are respectively positioned at two ports of the first cylinder (213), the first heating element (241) is sleeved outside the first cylinder (213) and attached to the outer wall of the first cylinder (213), the first cylinder (213) is provided with the second mounting hole (2131), the first heating element (241) is provided with the first avoiding hole (2411), and a central axis of the first cylinder (213) extends along the length direction of the semiconductor process chamber.
  15. 15. The semiconductor process chamber of claim 12, wherein the inner chamber (210) comprises a first cylinder (213) and a first front end cap (214) and a first rear end cap (215) respectively located at two ports of the first cylinder (213), the outer chamber (220) comprises a second cylinder (221) sleeved outside the first cylinder (213) and a second front end cap (222) and a second rear end cap (223) respectively located at two ports of the second cylinder (221), the first mounting hole (2211) is opened on the second cylinder (221), and the first front end cap (214) is connected with the second front end cap (222).
  16. 16. The semiconductor process chamber of claim 15, wherein the outer cavity (220) further comprises a resilient connection structure (224), the resilient connection structure (224) being connected between the second front end cap (222) and the first front end cap (214), and the resilient connection structure (224) deforming to urge the first front end cap (214) into abutment with a corresponding port of the first cylinder (213) when the second front end cap (222) is connected with a corresponding port of the second cylinder (221).
  17. 17. The semiconductor process chamber according to claim 12, wherein the gas inlet module (250) comprises a showerhead (251) and at least one gas inlet pipe (252) for inputting process gas, the showerhead (251) is provided with a plurality of third uniform flow holes (2511) communicated with the process space (211), the showerhead (251) is sealed and fixed at the second mounting hole (2131), a gas inlet interface is arranged at a position of the showerhead (251) in the sealed space (212), a first end of the gas inlet pipe (252) is sealed and fixed at the first mounting hole (2211) and exposed out of the outer cavity (220), and a second end of the gas inlet pipe (252) is sealed and connected with the corresponding gas inlet interface.
  18. 18. The semiconductor process chamber of claim 17, wherein the gas inlet module (250) further comprises an annular connection plate (253) and a sixth sealing ring (254), the annular connection plate (253) being disposed around the showerhead (251) and being in sealing connection with the showerhead (251), the annular connection plate (253) being fixed on an outer wall of the inner cavity (210), the sixth sealing ring (254) being disposed around the second mounting hole (2131) and being located between the annular connection plate (253) and the outer wall of the inner cavity (210).
  19. 19. The semiconductor process chamber according to claim 17 or 18, wherein the air intake module (250) further comprises a mounting seat (256), a seventh sealing ring (258) and an eighth sealing ring (259), the mounting seat (256) is sealingly fixed in the first mounting hole (2211), the mounting seat (256) is provided with a first perforation corresponding to the air intake pipe (252), a pressing plate (257) is fixed on the outer side of the mounting seat (256), the pressing plate (257) is provided with a second perforation corresponding to the air intake pipe (252), the inner wall of the second perforation is provided with an annular pressing surface facing the mounting seat (256), the first end of the air intake pipe (252) sequentially passes through the first perforation and the second perforation, and the outer wall of the part of the air intake pipe (252) located in the second perforation is provided with a pressing mating surface, the pressing mating surface faces away from the mounting seat (256), the seventh sealing ring (258) is arranged around the first perforation, and the seventh pressing plate (258) is pressed between the pressing plate (257) and the eighth sealing ring (259) and the pressing surface (259).
  20. 20. The semiconductor process chamber of claim 15, wherein the chamber body (200) further comprises a power supply terminal (230), the power supply terminal (230) extends into the process space (211) from the outside of the chamber body (200), and the carrier device (100) can move in and out of the process space (211) to drive the boat heating element (140) to be electrically connected with or separated from the power supply terminal (230).

Description

Bearing device, semiconductor process chamber and semiconductor process equipment Technical Field The application belongs to the technical field of semiconductor process equipment, and particularly relates to a bearing device, a semiconductor process chamber and semiconductor process equipment. Background In the process of manufacturing solar cells, a film layer having a predetermined function, such as a passivation film, needs to be deposited on the surface of a silicon wafer. Taking deposition of a passivation film as an example, the passivation film is formed on the surface of the silicon wafer, so that the recombination of carriers on the surface of the silicon wafer can be reduced to the greatest extent. The deposition of a film on the surface of a silicon wafer is accomplished in a semiconductor processing chamber. With the increase of the demands of users, how to increase the productivity of solar cells is an urgent problem in the current industry. In order to solve this problem, the related art generally increases the amount of silicon wafers deposited at a time by extending the length of a carrier boat for carrying the silicon wafers for coating, thereby achieving the purpose of increasing the productivity. However, in actual operation, there is a limit to the effect of increasing the length of the load boat. Based on this, other related art semiconductor process chambers employ a plurality of carrier boats stacked to increase the throughput of a single process. However, this method has some problems, which are that the carrier boat located in the middle is easily blocked by the carrier boat above and below, and thus the problem of slow temperature return is caused, which ultimately affects the process efficiency and the process effect of the carrier boat located in the middle. Of course, other load boats of the stacked load boats may have a slow temperature return problem due to the different heating modes. Disclosure of Invention The application discloses a bearing device, a semiconductor process chamber and semiconductor process equipment, which are used for solving the problem that at least part of bearing boats return slowly when the semiconductor process chamber adopts a plurality of bearing boats to be stacked in the background art. In order to solve the technical problems, the application provides the following technical scheme: In a first aspect, an embodiment of the present invention discloses a carrier device, where the disclosed carrier device includes a boat heating element, and a bottom carrier boat, a middle carrier boat, and a top carrier boat stacked in order in a first direction, where the boat heating element is disposed on a target carrier boat, and at least one of the bottom carrier boat, the middle carrier boat, and the top carrier boat is the target carrier boat. In a second aspect, an embodiment of the present invention discloses a semiconductor process chamber, where the disclosed semiconductor process chamber includes a chamber body and a carrying device according to the first aspect, the chamber body is provided with a process space, the carrying device may be disposed in the process space, and the first direction is a height direction of the chamber body. In a third aspect, embodiments of the present invention disclose a semiconductor processing apparatus comprising the semiconductor processing chamber of the second aspect. According to the bearing device disclosed by the embodiment of the invention, the structure is designed, the bottom bearing boat, the middle bearing boat and the top bearing boat are considered as the target bearing boat, the boat heating piece is arranged on the target bearing boat, and the target bearing boat is specially heated through the boat heating piece, so that the problem of slow temperature return of the target bearing boat is solved. Meanwhile, the special boat heating piece is arranged on the target bearing boat for heating, so that the targeted heating can be realized, and meanwhile, the bearing device can be provided with the capability of heating for the self structure. The boat heating piece is arranged on the target bearing boat, which is favorable for compact design of the structure, and further can avoid the problem that the boat heating piece occupies a larger space due to being arranged in a process space. Drawings Fig. 1 is a schematic view of a semiconductor process chamber according to an embodiment of the present invention, and only one exhaust module 260 is shown in fig. 1; FIG. 2 is a schematic view of a carrying device according to an embodiment of the present invention; FIG. 3 is a top view of FIG. 2; FIG. 4 is a right side view of FIG. 2; FIG. 5 is a schematic view of a portion of the structure of the intermediate carrier boat; FIG. 6 is a right side view of FIG. 5, the insulating housing 141 of the boat heating member 140 not being shown in FIGS. 5 and 6; fig. 7 is an exploded view of the power supply terminal; Fig. 8 i