CN-121428673-B - Compensation method for crystal face orientation of monocrystalline material

CN121428673BCN 121428673 BCN121428673 BCN 121428673BCN-121428673-B

Abstract

The application provides a crystal face orientation compensation method of a monocrystalline material, which comprises the steps of controlling an end face normal line of a crystal ingot to be collinear with a rotary shaft of a rotary carrying platform, executing three times of rotation, wherein the ith rotation comprises the steps of rotating the carrying platform to a preset angle omega i around the rotary shaft, rotating a ray emitter and a detector, determining an emission axis angle theta i corresponding to an incident light vector Vi of the ray emitter if a diffraction peak occurs to a detector signal, determining a crystal face normal vector in an initial state based on the three preset angles omega i and the emission axis angles theta i corresponding to the three preset angles omega i, determining a crystal face departure angle and a departure azimuth angle according to the initial crystal face normal vector, and adjusting the inclination posture of the crystal ingot until the departure angle is adjusted to a target angle. According to the method, three non-coplanar measurements replace global scanning in related technologies, so that the crystal face orientation compensation efficiency of the monocrystalline material can be effectively improved.

Inventors

WANG YUE
ZHANG JIFAN
ZHANG PENGPENG

Assignees

杭州弘晟智能科技有限公司

Dates

Publication Date: 20260508
Application Date: 20251229

Claims (10)

1. A method of compensating for crystal plane orientation of a single crystal material, the method comprising: controlling the normal line of the end surface of the ingot to be collinear with the rotation axis of the rotary carrier, adjusting the relative included angle between the ray emitter and the detector to be 180-2 phi, and enabling the ray emitter and the detector to synchronously rotate around the same rotation axis in a first specific plane, wherein phi is the Bragg angle of the crystal face to be detected of the ingot; the rotation step of the ith time is carried out, wherein the rotation step of the ith time comprises the steps of rotating the rotation carrier to a preset angle omega i around the rotation shaft, rotating the ray emitter and the detector, and determining an emission shaft angle theta i corresponding to an incident light vector Vi of the ray emitter if a diffraction peak appears on a signal of the detector; Determining a crystal face normal vector of the crystal ingot in an initial state based on the three preset angles omega i and the corresponding emission axis angles theta i; determining a crystal face deviation angle and a deviation azimuth angle according to the normal vector of the crystal face in the initial state; Adjusting the inclination posture of the crystal ingot according to the crystal face deviation angle and the deviation azimuth angle until the crystal face deviation angle is adjusted to a target angle; Wherein, the Ω1 is a predetermined angle to which the first rotation is performed, ω2 is a predetermined angle to which the second rotation is performed, ω3 is a predetermined angle to which the third rotation is performed, ω1 is 0 °, ω2 and ω3 are any two non-zero angles, ω1, ω2 and ω3 are different from each other.
2. The method of claim 1, wherein determining a crystal plane normal vector of the ingot in an initial state based on three of the predetermined angles ωi and the corresponding emission axis angles θi comprises: according to the rotation angle omega i of the rotating carrier, determining a crystal face normal vector Fi corresponding to the ith rotation through space rotation operation; according to the emission axis angle theta i, determining a corresponding incident light vector Vi during the ith rotation; And establishing an equation set based on the corresponding crystal face normal vector Fi and the corresponding incident light vector Vi during three rotations, and determining the crystal face normal vector of the ingot in an initial state through the equation set.
3. The method of compensating for the crystal face orientation of a single crystal material of claim 2 wherein establishing a system of equations and determining a crystal face normal vector of the ingot in an initial state from the system of equations comprises: Establishing an equation set consisting of three equations based on Bragg law, wherein each equation is expressed as that when the ith rotation is carried out, the included angle between the incident light vector Vi and the crystal face normal vector Fi meets Bragg diffraction conditions; And solving the equation set to obtain a numerical solution of the normal vector of the crystal face in the initial state.
4. A method for compensating for the orientation of the crystal face of a single crystal material as claimed in claim 2, The crystal face normal vector Fi corresponding to the ith rotation is obtained by rotating the crystal face normal vector in an initial state by omega i angles around a Z axis; The crystal face normal vector Fi corresponding to the ith rotation is obtained by the following calculation formula, wherein Fi=rz (ωi) is F1, rz (ωi) represents a rotation operator around the Z axis, and F1 represents the crystal face normal vector in an initial state.
5. A method for compensating for the orientation of the crystal face of a single crystal material as claimed in claim 3, The Bragg diffraction condition is that the dot product of the incident light vector Vi and the crystal face normal vector Fi is equal to sin phi, wherein the incident light vector Vi and the crystal face normal vector Fi are unit vectors.
6. The method of compensating for the crystal plane orientation of a single crystal material according to claim 1, wherein determining the crystal plane off-angle and off-azimuth angle from the normal vector of the crystal plane in the initial state comprises: The crystal face normal vector in the initial state is (x, y, Z), the crystal face off-angle is an included angle between the crystal face normal vector in the initial state and the Z-axis direction vector (0, 1), and the crystal face off-angle is obtained through a first target equation, wherein the first target equation is alpha=arccose (Z), and alpha represents the crystal face off-angle; The deviation azimuth angle is an included angle between a projection vector (X, y, 0) of the normal vector of the crystal face in the initial state on a second specific plane and the X-axis direction vector, and is obtained through a second target equation, wherein the second target equation is that rho=atan 2d (y, X), and rho represents the deviation azimuth angle.
7. The method for compensating for the crystal face orientation of a single crystal material according to claim 1, wherein, The incident light vector Vi is expressed as (0, -cos θi, sin θi) in a space rectangular coordinate system.
8. A compensation system for crystal plane orientation of a single crystal material for implementing a compensation method for crystal plane orientation of a single crystal material according to any one of claims 1 to 7, characterized in that the compensation system comprises: the rotating carrier is used for carrying and driving the ingot to rotate around the normal line of the end face of the ingot; A radiation emitter for emitting radiation; a detector for receiving the radiation diffraction signal; The driving mechanism is used for driving the ray emitter and the detector to synchronously rotate around the X axis and keeping the relative included angle of the ray emitter and the detector to be 180-2 phi; A control unit in communication with the rotating stage, the driving mechanism, and the detector, configured to control the rotating stage and the driving mechanism to perform a rotating step, and to determine a corresponding emission axis angle θi when a diffraction peak occurs in the detector; The control unit is further configured to determine a crystal plane normal vector of the ingot in an initial state based on three predetermined angles ωi and the corresponding emission axis angles θi, determine a crystal plane off-angle and an off-azimuth angle according to the crystal plane normal vector in the initial state, and adjust an inclined posture of the ingot according to the crystal plane off-angle and the off-azimuth angle until the crystal plane off-angle is adjusted to a target angle.
9. A device for compensating for crystal plane orientation of a single crystal material, the device comprising: the control module is used for controlling the end surface normal of the ingot to be collinear with the rotating shaft of the rotating carrier, adjusting the relative included angle between the ray emitter and the detector to be 180-2 phi, and enabling the ray emitter and the detector to synchronously rotate around the same rotating shaft in a first specific plane, wherein phi is the Bragg angle of the crystal face to be detected of the ingot; The rotation operation module is used for executing three rotation steps, wherein the ith rotation step comprises the steps of rotating the rotation carrier around the rotation shaft to a preset angle omega i, rotating the ray emitter and the detector, and determining an emission axis angle theta i corresponding to an incident light vector Vi of the ray emitter if a diffraction peak appears in a signal of the detector; The calculation module is used for determining a crystal face normal vector of the crystal ingot in an initial state based on the three preset angles omega i and the corresponding emission axis angles theta i, and determining a crystal face departure angle and a departure azimuth angle according to the crystal face normal vector in the initial state; The adjusting module is used for adjusting the inclination posture of the crystal ingot according to the crystal face deviation angle and the deviation azimuth angle until the crystal face deviation angle is adjusted to a target angle; Wherein, the Ω1 is a predetermined angle to which the first rotation is performed, ω2 is a predetermined angle to which the second rotation is performed, ω3 is a predetermined angle to which the third rotation is performed, ω1 is 0 °, ω2 and ω3 are any two non-zero angles, ω1, ω2 and ω3 are different from each other.
10. A computer readable storage medium, on which a computer program is stored, characterized in that the computer program, when being executed by a processor, implements the steps of the method of any of claims 1 to 7.

Description

Compensation method for crystal face orientation of monocrystalline material Technical Field The invention relates to the field of monocrystalline materials, in particular to a compensation method for crystal face orientation of a monocrystalline material. Background In the related art, single crystals are solids in which atoms, ions or molecules are strictly periodically arranged in a three-dimensional space, the lattice structure thereof is continuous and no grain boundary exists, and the highly ordered arrangement enables the single crystals to have the characteristics of uniformity, anisotropy, symmetry, minimum internal energy, maximum stability and the like, and are widely applied to the fields of semiconductor devices, laser technology, photocatalysis and optical elements. The crystal plane deviation angle directly affects the processing stress and material properties of the ingot, and the azimuth angle of the deviation indicates the direction of the crystal plane deviation. How to quickly and accurately obtain the crystal face off-angle and off-azimuth angle so as to compensate the crystal ingot is an important link in the production process of single crystal materials. In the related technology, such as a rotation orientation method and a rocking curve method, the core of the rotation orientation method and the rocking curve method is to find out the unique special state which simultaneously satisfies the coplanarity of the crystal face normal line, the emitting axis and the receiving axis by traversing different angles, so as to determine the deviation angle and the deviation azimuth angle of the crystal face to compensate the crystal ingot. Disclosure of Invention In order to solve the defects of the related technology, the application provides a crystal face orientation compensation method of a monocrystalline material, which can effectively improve the crystal face orientation compensation efficiency of the monocrystalline material. In a first aspect, the present application provides a method for compensating for crystal plane orientation of a single crystal material, the method comprising: controlling the normal line of the end surface of the ingot to be collinear with the rotating shaft of the rotating carrier, adjusting the relative included angle between the ray emitter and the detector to be 180-2 phi, and enabling the ray emitter and the detector to synchronously rotate around the same rotating shaft in a first specific plane, wherein phi is the Bragg angle of the crystal face to be detected of the ingot; The rotation step of the ith time is carried out, wherein the rotation step of the ith time comprises the steps of rotating a rotation carrier around a rotation shaft to a preset angle omega i, rotating an X-ray emitter and a detector, and determining an emission axis angle theta i corresponding to an incident light vector Vi of the X-ray emitter if diffraction peaks appear on signals of the detector; determining a crystal face normal vector of the ingot in an initial state based on three preset angles omega i and corresponding emission axis angles theta i; determining a crystal face deviation angle and a deviation azimuth angle according to the normal vector of the crystal face in the initial state; And adjusting the inclination posture of the crystal ingot according to the crystal face deviation angle and the deviation azimuth angle until the crystal face deviation angle is adjusted to the target angle. In one embodiment, determining a crystal plane normal vector of the ingot in an initial state based on three predetermined angles ωi and corresponding emission axis angles θi includes: According to the rotation angle omega i of the rotating carrier, determining a crystal face normal vector Fi corresponding to the ith rotation through space rotation operation; according to the emission axis angle theta i, determining a corresponding incident light vector Vi during the ith rotation; And establishing an equation set based on the corresponding crystal face normal vector Fi and the corresponding incident light vector Vi during three rotations, and determining the crystal face normal vector of the ingot in an initial state through the equation set. In one embodiment, establishing a set of equations and determining a crystal plane normal vector of the ingot in an initial state from the set of equations comprises: Establishing an equation set consisting of three equations based on Bragg law, wherein each equation is expressed as that when the ith rotation is carried out, the included angle between the incident light vector Vi and the normal vector Fi of the crystal face meets Bragg diffraction conditions; and solving an equation set to obtain a numerical solution of the normal vector of the crystal face in the initial state. In one embodiment, the crystal face normal vector Fi corresponding to the ith rotation is obtained by rotating the crystal face normal vector in the initial state by ωi ang