CN-121442952-B - Thin film element and preparation method thereof

Abstract

The application provides a film element and a preparation method thereof, wherein the film element comprises a functional film layer, the functional film layer comprises a first film region, a second film region and a third film region, wherein the inner side of the second film region is attached to the outer side edge of the first film region, the second film region comprises a third arc-shaped part arranged at the outer corner of the second film region, the third film region comprises a second arc-shaped part and a first arc-shaped part, the second arc-shaped part is attached to the third arc-shaped part, and the first arc-shaped part is arranged at one side far away from the second arc-shaped part. The functional film layer of the film element in the above scheme comprises a third film region arranged at the corner structure, an arc-shaped portion is arranged at one side of the third film region far away from the corner structure, the arc-shaped portion of the third film region can optimize current distribution of the functional film layer, and when static impact is received, the current is distributed in the arc-shaped portion more smoothly and dispersedly, so that current density of the corner region when the static impact is received is reduced.

Inventors

• HE YUAN
• XIAO GUANGSHUN
• ZHU XIN

Assignees

• 苏州矩阵光电有限公司

Dates

Publication Date

20260512

Application Date

20251231

Claims (8)

1. 1. The thin film element is characterized by comprising a functional thin film layer, wherein the functional thin film layer comprises a first thin film region, a second thin film region and a third thin film region, and the thin film element comprises: the inner side of the second film area is attached to the outer side edge of the first film area; the second film region comprises a third arc-shaped part arranged at the outer corner of the second film region, wherein the third film region comprises a first arc-shaped part and a second arc-shaped part, the second arc-shaped part is attached to the third arc-shaped part, and the first arc-shaped part is arranged at one side far away from the second arc-shaped part; The resistivity of the third film region is greater than the resistivity of the second film region, which is greater than the resistivity of the first film region; The second film region further comprises a fourth arc-shaped portion arranged at the inner corner, the first film region comprises a fifth arc-shaped portion arranged at the outer corner, and the fourth arc-shaped portion is attached to the fifth arc-shaped portion.
2. 2. The thin film element of claim 1, wherein the ratio of the resistivity of the third thin film region to the resistivity of the second thin film region is greater than 1.5-2, and the ratio of the resistivity of the third thin film region to the resistivity of the first thin film region is greater than 2-4.
3. 3. The thin film element of claim 1, wherein the third thin film region has a thickness less than a thickness of the second thin film region, and wherein the second thin film region has a thickness less than a thickness of the first thin film region.
4. 4. The thin film element of claim 1 or 3, wherein the third thin film region has a doping concentration less than a doping concentration of the second thin film region, and wherein the second thin film region has a doping concentration less than a doping concentration of the first thin film region.
5. 5. The thin film element according to claim 1, wherein the radius of curvature of the first arcuate portion is 20 to 100 。
6. 6. A method of making a thin film element, the method comprising: performing functional material growth on the substrate; Performing functional image etching on the grown functional material to obtain a functional film layer; performing electrode metal evaporation to complete the preparation of the thin film element; The functional film layer comprises a first film region, a second film region and a third film region, wherein the inner side of the second film region is attached to the outer side edge of the first film region, the second film region comprises a third arc-shaped portion arranged at the outer side corner of the second film region, the third film region comprises a second arc-shaped portion and a first arc-shaped portion, the second arc-shaped portion is attached to the third arc-shaped portion, the first arc-shaped portion is arranged on one side far away from the second arc-shaped portion, the resistivity of the third film region is larger than that of the second film region, the resistivity of the second film region is larger than that of the first film region, the second film region further comprises a fourth arc-shaped portion arranged at the inner side corner, the first film region comprises a fifth arc-shaped portion arranged at the outer side corner, and the fourth arc-shaped portion is attached to the fifth arc-shaped portion.
7. 7. The method of manufacturing a thin film device according to claim 6, wherein the performing functional image etching on the grown functional material to obtain a functional thin film layer comprises: Photoetching and etching the functional material to obtain a functional film layer; Adding a corrosion barrier layer on the first film region, and etching the second film region and the third film region so that the thickness of the second film region is smaller than that of the first film region; and adding an corrosion barrier layer on the second film region, and etching the third film region so that the thickness of the third film region is smaller than that of the second film region.
8. 8. The method of manufacturing a thin film element according to claim 6, wherein after the functional image etching is performed on the grown functional material to obtain a functional thin film layer, the method further comprises: performing ion implantation or thermal diffusion treatment on the first film region and the second film region so that the doping concentration of the third film region is smaller than that of the second film region; and carrying out ion implantation or thermal diffusion treatment on the first film region so as to enable the doping concentration of the second film region to be smaller than that of the first film region.

Description

Thin film element and preparation method thereof Technical Field The application relates to the technical field of chip manufacturing, in particular to a thin film element and a preparation method thereof. Background In the field of chip manufacturing, in order to further improve the characteristics of thin film functional materials, a thin film transfer process is generally used to transfer the functional thin film to other substrates such as a magnetic substrate, sapphire, glass, and the like. This process is typically accomplished using a transfer glue that is used to transfer bond the functional film to the substrate. Particularly after the functional film is fabricated into chips, for some chip designs having a special structure, such as the corner structure shown in fig. 1. When the chip is placed in an electrostatic discharge (ESD) environment, the areas where the special structures are located are easy to have the conditions of high current density and serious heat generation, and finally the device is disabled, and the appearance of the damaged element is shown in fig. 2. At present, the related art mostly adopts a mode of optimizing the resistance of the device to reduce the voltage division of the device when the device receives electrostatic impact, but the reduction of the resistance of the device may not meet the performance requirement, and the reduction of the resistance under the constant-voltage operation of the conventional working environment will cause the increase of the power consumption of the device. Disclosure of Invention An objective of the embodiments of the present application is to provide a thin film device and a method for manufacturing the same, which are used for solving the above-mentioned problems. In a first aspect, the embodiment of the application provides a film element, which comprises a functional film layer, wherein the functional film layer comprises a first film region, a second film region and a third film region, the inner side of the second film region is attached to the outer side edge of the first film region, the second film region comprises a third arc-shaped portion arranged at the outer side corner of the second film region, the third film region comprises a second arc-shaped portion and a first arc-shaped portion, the second arc-shaped portion is attached to the third arc-shaped portion, and the first arc-shaped portion is arranged on one side far away from the second arc-shaped portion. In the implementation process of the scheme, the functional film layer of the film element comprises a third film region arranged at the corner structure, and an arc-shaped part is arranged at one side of the third film region far away from the corner structure, so that on one hand, the arc-shaped part of the third film region can optimize current distribution of the functional film layer, when the functional film layer is subjected to electrostatic impact, current is distributed in the arc-shaped part smoothly and dispersedly, and therefore the current density of the corner region when the corner region is subjected to the electrostatic impact is reduced, on the other hand, compared with a sharp angle structure, the arc-shaped part can effectively reduce the electric field intensity of the corner region, and therefore the aggregation degree of charges in the corner region is reduced, the current density of the corner region when the corner region is subjected to the electrostatic impact is further reduced, the problems of local overheating, material damage and the like caused by overhigh current density at the corner structure are effectively avoided, the stability and reliability of the element are improved, and the service life of the film element is prolonged. In one implementation of the first aspect, the third film region has a resistivity greater than a resistivity of the second film region, which is greater than a resistivity of the first film region. In the implementation process of the scheme, the resistivity of the first film region is set to be the lowest, so that current can more easily pass through the first film region rather than being concentrated in the corner region, the current density of the corner region when being impacted by static electricity is reduced, and the risk of damage to materials caused by overhigh current density is reduced; on the other hand, the first film region with lower resistivity can reduce the electric field intensity, avoid the excessive concentration of the electric field, reduce the electric field intensity of the corner region when receiving the static impact, can obviously reduce the breakdown risk caused by electric field concentration of the device. In one implementation manner of the first aspect, a ratio of the resistivity of the third film region to the resistivity of the second film region is greater than 1.5-2, and a ratio of the resistivity of the third film region to the resistivity of the first film region is