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CN-121530459-B - High-density multichannel Ku wave band radio frequency channel integrated micro-module

CN121530459BCN 121530459 BCN121530459 BCN 121530459BCN-121530459-B

Abstract

The invention discloses a high-density multichannel Ku-band radio frequency channel integrated micro-module, and belongs to the technical field of radio frequency micro-systems. The micro-module adopts a three-dimensional stacking architecture and comprises a four-channel receiving and transmitting front end IP, a receiving and transmitting frequency conversion IP, a local oscillator source IP and a high-density integrated PCB substrate, wherein the three IPs are all packaged in a silicon-based mode, and received input signals enter the four-channel receiving and transmitting front end IP, are transmitted into the receiving and transmitting frequency conversion IP through the high-density integrated PCB substrate through amplitude phase control, are subjected to radio frequency gating filtering, and are subjected to frequency mixing down-conversion to intermediate frequency output. The transmitting input signal enters the receiving-transmitting frequency conversion IP, is subjected to frequency mixing up-conversion, is subjected to radio frequency gating and filtering, is transmitted to the four-channel receiving-transmitting front end IP through the high-density integrated PCB substrate, is subjected to amplitude phase control, and is amplified and output through the power amplification chip. The invention adopts the chip preset grounding ring, the silicon substrate to independently divide the cavity and the IP shielding cavity, thereby solving the problem of complex electromagnetic compatibility during communication.

Inventors

  • CAI CHUANTAO
  • JIANG LEI
  • WEN XIAOKANG
  • YU HAONAN
  • ZHANG JUNZHI

Assignees

  • 中国电子科技集团公司第五十五研究所

Dates

Publication Date
20260512
Application Date
20260115

Claims (8)

  1. 1. The integrated micro-module is characterized by comprising a four-channel transceiving front end IP (E01), a local oscillation source IP (E02) and a transceiving variable frequency IP (E03) which are sequentially and horizontally arranged on a high-density integrated PCB substrate (1), wherein the three IPs are all silicon-based packaging, and each IP is electrically interconnected with the high-density integrated PCB substrate (1) through three-dimensional stacking, and the local oscillation source IP (E02) is a POP architecture; The method comprises the steps that a received input signal enters a four-channel receiving and transmitting front end IP (E01) through a high-density integrated PCB substrate (1), power amplification is carried out through a receiving and transmitting amplifying circuit, amplitude phase adjustment is carried out on the received input signal through a 3D heterogeneous multifunctional chip, the received input signal enters a receiving and transmitting variable frequency IP (E03) through an internal interconnection wiring of the high-density integrated PCB substrate (1), after frequency band gating of a switch filter bank is carried out in the receiving and transmitting variable frequency IP (E03), an intermediate frequency signal is outputted through a frequency mixing circuit in a down-conversion mode, and finally the intermediate frequency signal is outputted through the high-density integrated PCB substrate (1); The transmitting input signal enters a transmitting-receiving frequency conversion IP (E03) through a high-density integrated PCB substrate (1), enters a four-channel transmitting-receiving front end IP (E01) after up-conversion and radio frequency band gating, carries out amplitude phase adjustment on the transmitting input signal through a 3D heterogeneous multifunctional chip, and outputs the transmitting input signal through the high-density integrated PCB substrate (1) after power amplification through a transmitting-receiving amplifying circuit; the vibration source IP (E02) generates a receiving local oscillator signal and a transmitting local oscillator signal, the receiving local oscillator signal or the transmitting local oscillator signal is selected by a switch amplifying circuit, and four paths of signal input receiving and transmitting frequency conversion IP (E03) are provided by a power dividing network (22); The four-channel transceiving front end IP (E01) is composed of a 3D heterogeneous multifunctional chip and a transceiving amplifying circuit which are integrated in the four-channel transceiving front end IP silicon-based tube shell; the four-channel transceiving front-end IP silicon-based tube shell consists of a four-channel transceiving front-end IP silicon substrate (2) and a four-channel transceiving front-end IP silicon cap (8) with a cavity, wherein the four-channel transceiving front-end IP silicon cap (8) is assembled above the four-channel transceiving front-end IP silicon substrate (2) in a wafer-level bonding mode; the receiving-transmitting frequency conversion IP (E03) is composed of a mixing circuit, a local oscillator signal amplifying circuit and a radio frequency band gating circuit which are integrated in a receiving-transmitting frequency conversion IP silicon-based tube shell; The receiving-transmitting frequency conversion IP silicon-based tube shell consists of a receiving-transmitting frequency conversion IP silicon substrate (4) and a receiving-transmitting frequency conversion IP silicon cap (9) with a cavity, wherein the receiving-transmitting frequency conversion IP silicon cap (9) is assembled above the receiving-transmitting frequency conversion IP silicon substrate (4) in a wafer-level bonding mode, and BGA solder balls (11) are integrated below the receiving-transmitting frequency conversion IP silicon substrate (4) and are used for interconnection with the high-density integrated PCB substrate (1); The mixing circuit, the local oscillator signal amplifying circuit and the radio frequency band selecting circuit are all provided with a chip bonding PAD (26), and the chip bonding PAD (26) is connected with a silicon substrate bonding area (27) through a wire bonding (15).
  2. 2. The integrated micro module of the high-density multi-channel Ku band radio frequency channel according to claim 1, wherein the four-channel transceiving front end IP silicon substrate (2) is used as an input end for receiving the four-channel transceiving front end IP (E01) and an output end for transmitting, in a receiving state, an input signal from the high-density integrated PCB substrate (1) is received and transmitted to a transceiving amplifying circuit, and then amplitude phase adjustment is performed through the 3D heterogeneous multi-functional chip, and in a transmitting state, a transmitting signal is output to the high-density integrated PCB substrate (1) and finally output.
  3. 3. The integrated micro-module of the high-density multichannel Ku-band radio frequency channel integration according to claim 1, wherein in a receiving state, the receiving-transmitting frequency conversion IP silicon substrate (4) receives signals subjected to amplitude modulation and phase modulation of the four-channel receiving-transmitting front end IP (E01), and outputs intermediate frequency signals through the receiving-transmitting frequency conversion IP silicon substrate (4) after being subjected to frequency down conversion by the frequency mixing circuit; In a transmitting state, a transmitting-receiving frequency conversion IP silicon substrate (4) is used as an input end of a transmitting signal, the transmitting signal is subjected to up-conversion of a mixing circuit and frequency band gating of a radio frequency band gating circuit, a radio frequency signal is output to a four-channel transmitting-receiving front end IP (E01), and a transmitting local oscillation signal output by a local oscillation source enters the mixing circuit after being amplified by a local oscillation signal amplifying circuit.
  4. 4. The high-density multichannel Ku band radio frequency channel integrated micro-module according to claim 3, wherein the radio frequency band gating circuit adopts a GaAs integrated switch filter bank chip (20), and the gating of the filters is performed by switching, so as to ensure mutual isolation between the filters.
  5. 5. The integrated micro-module of the high-density multi-channel Ku-band radio frequency channel integration according to claim 1, wherein the local oscillator source IP (E02) comprises a control unit arranged in a silicon-based shell of the control unit and a phase-locked loop unit arranged in the silicon-based shell of the phase-locked loop unit; The control unit comprises a control circuit and a power division network (22), wherein the control circuit controls a receiving phase-locked loop and a transmitting phase-locked loop in the phase-locked loop unit and outputs a receiving local oscillator signal or a transmitting local oscillator signal output by the phase-locked loop unit to a receiving-transmitting frequency conversion IP (E03) after amplifying the power division; the phase-locked loop unit comprises a phase-locked loop circuit and a switch amplifying circuit, and the switch amplifying circuit amplifies, filters and switches the local oscillation signal output by the phase-locked loop circuit; the control unit silicon-based tube shell consists of a control unit bottom silicon substrate (3), a control unit middle layer surrounding frame (5) and a control unit top silicon-based cover plate (6) from bottom to top; The control unit bottom silicon substrate (3) outputs a receiving local oscillation signal or a transmitting local oscillation signal, the control unit middle layer surrounding frame (5) divides the control unit into cavities to isolate a receiving frequency source and a transmitting frequency source, and the control signal is transmitted to the control unit top silicon substrate cover plate (6) through the control unit middle layer surrounding frame (5); The phase-locked loop unit silicon-based shell consists of a phase-locked loop unit silicon substrate (7) and a phase-locked loop unit silicon cap (10) with a cavity, wherein the phase-locked loop unit silicon cap (10) is arranged above the phase-locked loop unit silicon substrate (7), and BGA solder balls (11) are integrated below the phase-locked loop unit silicon substrate (7) and are used for interconnecting a phase-locked loop unit and a control unit top silicon-based cover plate (6); The control circuit, the phase-locked loop circuit and the switch amplifying circuit are all provided with a chip bonding PAD (26), and the chip bonding PAD (26) is connected with a silicon substrate bonding area (27) through a wire bonding (15).
  6. 6. The integrated micro module for the high-density multichannel Ku-band radio frequency channel according to claim 5 is characterized in that 200:30 TSV blind holes (25) are integrated in a control unit bottom silicon substrate (3), a control unit middle layer surrounding frame (5) and a control unit top silicon substrate cover plate (6) to realize vertical signal transmission.
  7. 7. The high-density multi-channel Ku-band radio frequency channel integrated micro-module according to any one of claims 1-6, wherein the 3D heterogeneous multi-functional chip comprises a Si fundamental control chip (13), micro bumps (16) and an integrated GaAs low noise amplifier/amplitude modulation phase shift chip (14); the integrated GaAs low-noise amplifier/amplitude modulation phase-shifting chip (14) is provided with a chip bonding PAD (26), and the Si fundamental wave control chip (13) is flip-chip mounted on the integrated GaAs low-noise amplifier/amplitude modulation phase-shifting chip (14) through a micro bump (16); one end of the wire bonding (15) is connected with a chip bonding PAD (26) on the integrated GaAs low noise amplifier/amplitude modulation phase shift chip (14), the other end of the wire bonding is connected with a silicon substrate bonding area (27), and the silicon substrate bonding area (27) is arranged on the four-channel transceiving front end IP silicon substrate (2) and is electrically connected with the four-channel transceiving front end IP silicon substrate (2).
  8. 8. The integrated micro module of the high-density multi-channel Ku band radio frequency channel according to any one of claims 1 to 6, wherein a BGA solder ball (11) is integrated below the high-density integrated PCB substrate (1) and used for interconnection with an antenna, and on-chip low-impedance ground rings are preset on each chip arranged in the four-channel transceiver front end IP (E01), the local oscillator source IP (E02) and the transceiver variable frequency IP (E03).

Description

High-density multichannel Ku wave band radio frequency channel integrated micro-module Technical Field The invention relates to the technical field of radio frequency microsystems, in particular to a high-density multichannel Ku-band radio frequency channel integrated micro-module. Background With the development of electronic information systems to higher integration levels, performances and working frequencies, moore's law physical limits make it difficult for traditional packaging technologies to meet the integration requirements of new systems. Three-dimensional heterogeneous integration becomes a key path for continuing and surpassing moore's law, and a core carrier is a radio frequency microsystem. Radio frequency microsystem integration technology is a critical advanced packaging technology that follows the trend of miniaturization of electronic systems. The technology mainly serves the urgent demands of high integration (miniaturization, light weight) and multifunction of components such as an integrated radio frequency front end, an active array surface and the like in the tip fields such as 5G communication, the Internet of things and the like. The method is characterized in that heterogeneous integration is realized by advanced process processing based on multiple electronic elements such as microelectronics, photoelectronics, MEMS and the like, and three-dimensional high-density integration of radio frequency, digital, photoelectric and energy electronic systems is realized by deep fusion structural design, software and algorithm. The trunking communication radio frequency channel is mainly composed of a series of compound semiconductor chips, si CMOS chips, and MEMS chips, which are typically fabricated on different substrates by different processing techniques, greatly limiting the possibilities of integrating these devices through a complete set of process flows. The prior art generally adopts a multi-chip module (MCM) or similar micro-assembly mode, so that the integration density and the application flexibility of a radio frequency channel are greatly restricted, and the requirements of a next-generation unmanned aerial vehicle relay communication micro-system cannot be met. Disclosure of Invention The invention aims to provide a high-density multichannel Ku-band radio frequency channel integrated micro-module, which solves the problems of high-frequency signal leakage and coupling interference between adjacent units in a relay communication radio frequency channel, realizes sixteen-channel transceiving integrated integration by adopting a miniaturized compact layout, and can realize electromagnetic compatibility between adjacent elements of high-density miniaturized three-dimensional integrated and isolation during signal transmission. The technical scheme is that the high-density multichannel Ku-band radio frequency channel integrated micro-module comprises a four-channel transceiving front end IP, a local oscillation source IP and a transceiving variable frequency IP which are sequentially and horizontally arranged on a high-density integrated PCB substrate, wherein the three IPs are all silicon-based packaging, and the local oscillation source IP is a POP architecture; The method comprises the steps that a received input signal enters a four-channel receiving and transmitting front end IP through a high-density integrated PCB substrate, after power amplification is carried out through a receiving and transmitting amplifying circuit, amplitude phase adjustment is carried out on the received input signal through a 3D heterogeneous multifunctional chip, then the received input signal enters a receiving and transmitting frequency conversion IP through an internal interconnection wiring of the high-density integrated PCB substrate, after frequency band gating of a switch filter bank is carried out in the receiving and transmitting frequency conversion IP, an intermediate frequency signal is outputted through down-conversion of a frequency mixing circuit, and finally the intermediate frequency signal is outputted through the high-density integrated PCB substrate; The method comprises the steps that a transmitting input signal enters a transmitting-receiving frequency conversion IP through a high-density integrated PCB substrate, the transmitting input signal enters a four-channel transmitting-receiving front end IP after being subjected to up-conversion by a frequency mixing circuit and radio frequency band gating, the transmitting input signal is subjected to amplitude phase adjustment by a 3D heterogeneous multifunctional chip, and the transmitting input signal is output through the high-density integrated PCB substrate after being subjected to power amplification by a transmitting-receiving amplifying circuit; The vibration source IP generates a receiving local oscillator signal and a transmitting local oscillator signal, selects the receiving local oscillator signal or the transmitting lo