CN-121543379-B - Simulation method of semiconductor device, electronic apparatus, and computer-readable storage medium

CN121543379BCN 121543379 BCN121543379 BCN 121543379BCN-121543379-B

Abstract

The present disclosure relates to a simulation method of a semiconductor device, an electronic apparatus, and a computer-readable storage medium. The method comprises the steps of determining the current position of particles in a simulation area of the semiconductor device, wherein the simulation area comprises a local expansion area, the local expansion area comprises at least one complete virtual lattice, and simulating the movement of the particles by using the local expansion area based on the current position of the particles. Embodiments of the present disclosure can advantageously improve ion/particle implantation simulation physical accuracy.

Inventors

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Assignees

全智芯(上海)技术有限公司

Dates

Publication Date: 20260512
Application Date: 20260120

Claims (12)

1. A simulation method of a semiconductor device, comprising: determining a current position of a particle within a simulation area of the semiconductor device, wherein the simulation area comprises a locally extended area comprising at least one complete virtual lattice, and In response to determining that the current position of the particle is below a predetermined threshold from a boundary of the simulation area to be reached, simulating movement of the particle using the locally expanded area.
2. The method of claim 1, further comprising: Constructing the local extension region at the boundary of the simulation region based on the current location, wherein constructing the local extension region comprises: Dynamically constructing a locally expanded region at a boundary of the simulation region to be reached in response to determining that a distance of a current location of the particle from the boundary is below the predetermined threshold; and continuing the motion simulation of the particles in the local extension area.
3. The method of claim 2, wherein constructing the local extension region at the boundary of the simulation region based on the current location comprises: the local expansion region is dynamically generated at a boundary where a current position of the particle or an expected motion trajectory of the particle determined based on the current position is adjacent.
4. The method of claim 3, wherein dynamically generating the local extension region comprises: Virtual atoms for the virtual lattice are replenished outside the boundary based on the current position of the particle to expand the incomplete lattice at the boundary of the simulated region to include at least one complete lattice without cutting.
5. The method of claim 1, wherein simulating the movement of the particle using the localized extension region further comprises: based on preset boundary conditions, a final state of the particle is determined.
6. The method of claim 5, wherein the preset boundary conditions include at least one of: Reflection boundary conditions; Periodic boundary conditions; Expanding boundary conditions; Transparent boundary conditions.
7. The method of claim 6, wherein determining the final state of the particle based on the preset boundary condition comprises: Resetting the position and momentum of the particle back into the simulation area according to reflection law in response to the particle crossing the boundary under the reflection boundary condition; Resetting the particle back to a corresponding periodic location within the simulation area by translating in response to the particle crossing the boundary under the periodic boundary condition; Determining the position of the particle in the local extension region as a new position of the particle under the extension boundary condition; under the transparent boundary condition, responsive to the particle crossing the boundary, the particle is marked as permanently exiting the simulation area.
8. The method of claim 7, wherein resetting the particle back to the corresponding periodic location within the simulation area by translation comprises: The position of the particles is changed and the direction of movement of the particles is kept unchanged.
9. The method of claim 7, further comprising: In response to determining that the current position of the particle is not below a predetermined threshold from the boundary of the simulation area to be reached, flight and collision simulations are performed on the particle in the simulation area according to the Monte Carlo method.
10. The method of any one of claims 2 to 4 and 9, wherein the predetermined threshold is determined based on a lattice constant of the material.
11. An electronic device, comprising: Processor, and A memory coupled with the processor, the memory having instructions stored therein that, when executed by the processor, cause the electronic device to perform actions comprising: determining a current position of a particle within a simulation area of a semiconductor device, wherein the simulation area comprises a locally extended area comprising at least one complete virtual lattice; in response to determining that the current position of the particle is below a predetermined threshold from a boundary of the simulation area to be reached, simulating movement of the particle using the locally expanded area.
12. A computer readable storage medium having stored thereon a computer program which when executed by a processor implements the method according to any of claims 1 to 10.

Description

Simulation method of semiconductor device, electronic apparatus, and computer-readable storage medium Technical Field Embodiments of the present disclosure relate generally to the field of semiconductor devices, and more particularly, to a simulation method of a semiconductor device, an electronic apparatus, and a computer-readable storage medium. Background Particle implantation is a key process step in semiconductor manufacturing, which enables the controllable adjustment of the spatial distribution of doping elements by precisely implanting a charged particle beam having a certain energy into a crystalline material matrix. In the prior process (for example, below 7 nm), higher requirements are imposed on the simulation accuracy of ion implantation. For example, junction Depth (Junction Depth) tolerance is required to be less than 1nm, doping concentration gradient needs to be precisely controlled to be within + -2%, and traditional analytical models (such as DualPearson distribution) fail on nanometer scale. The Monte Carlo method is widely used for particle injection simulation and becomes a gold standard because the Monte Carlo method can accurately simulate physical processes such as scattering, energy loss, lattice damage and the like of particles in a crystal material. However, in the existing monte carlo ion implantation simulation, in order to balance the computing resources and the simulation accuracy, a limited simulation area is generally defined. The boundaries of the area need to be set with different boundary conditions to simulate different physical environments in an actual chip. Taking the mainstream tool (SRIM/TRIM, sentaurus MC) as an example, the boundary handling has fundamental drawbacks. For example, existing simulation tools typically apply the above boundary conditions directly when processing boundaries, while ignoring boundaries of the simulation areas tends to cut the atomic lattice, resulting in incomplete lattice cells at the boundaries. When the simulated ions move to these boundary regions, their collision environment with the target atoms suddenly changes from a "complete lattice" to an "incomplete lattice". Such geometrical discontinuities can lead to particle trajectory distortion, doping profile errors, and physical model failure. Disclosure of Invention According to example embodiments of the present disclosure, a simulation method, an electronic device, and a computer-readable storage medium for a semiconductor device are provided to at least partially address the above-mentioned or other potential drawbacks. In a first aspect of the present disclosure, a simulation method of a semiconductor device is provided, comprising determining a current position of a particle within a simulation area of the semiconductor device, wherein the simulation area comprises a locally extended area comprising at least one complete virtual lattice, and simulating a movement of the particle using the locally extended area based on the current position of the particle. In a second aspect of the present disclosure, an electronic device is provided. The electronic device includes a processor and a memory coupled to the processor, the memory having instructions stored therein that, when executed by the processor, cause the electronic device to perform actions. The actions include determining a current position of the particle within a simulation area of the semiconductor device, wherein the simulation area includes a locally expanded area containing at least one complete virtual lattice, and simulating a motion of the particle using the locally expanded area based on the current position of the particle. In some embodiments, constructing a locally expanded region including at least one complete virtual lattice at the boundary of the simulation region based on the current location includes dynamically constructing a locally expanded region at the boundary of the simulation region in response to determining that a distance of the current location of the particle from the boundary of the simulation region to be reached is below a predetermined threshold, wherein the locally expanded region includes at least one complete virtual lattice, continuing motion simulation of the particle within the locally expanded region. In some embodiments, constructing a locally expanded region comprising at least one complete virtual lattice at the boundary of the simulation region based on a current position comprises dynamically generating the locally expanded region at a boundary proximate to a current position of the particle or an expected motion trajectory of the particle determined based on the current position. In some embodiments, dynamically generating the locally expanded region includes supplementing outside of the boundary virtual atoms for a virtual lattice based on a current position of the particles to expand an incomplete lattice at the boundary of the simulated region to include at least one comp