CN-121567066-B - High-linearity low-noise amplifier with current detection function and method

CN121567066BCN 121567066 BCN121567066 BCN 121567066BCN-121567066-B

Abstract

The invention provides a high-linearity low-noise amplifier with a current detection function and a method thereof, belonging to the technical field of integrated circuits, and comprising an input matching module, a grid source feedback stacking amplifying module, an off-chip inductance feeding module and a negative feedback module which are respectively connected with the input matching module, a source biasing module connected with the off-chip inductance feeding module, a passive biasing module and an output matching module which are connected with the grid source feedback stacking amplifying module, an operational amplifying module connected with the output matching module and a logic shaping module connected with the operational amplifying module; the invention solves the problem that the current abnormality alarm can not be carried out while the high linearity and low noise of the existing amplifier are realized.

Inventors

YANG CONGCONG
GU XUN
HUANG DAN
WANG CETIAN
LIAO XUEJIE
SHI WENXIN
YANG HONGLUN
DENG CHUN
LIU YING
QIN LIANG
YU TAO

Assignees

成都嘉纳海威科技有限责任公司

Dates

Publication Date: 20260512
Application Date: 20260123

Claims (7)

1. The high-linearity low-noise amplifier with the current detection function is characterized by comprising an input matching module, a grid source feedback stacking amplification module, an off-chip inductance feed module and a negative feedback module which are respectively connected with the input matching module, an active bias module connected with the off-chip inductance feed module, a passive bias module and an output matching module which are connected with the grid source feedback stacking amplification module, an operational amplification module connected with the output matching module and a logic shaping module connected with the operational amplification module; The active bias module is also connected with the passive bias module, the grid source feedback stack amplifying module, the negative feedback module and the output matching module, and is connected with the grid source feedback stack amplifying module through the off-chip inductance feed module; the input matching module is used for receiving the input signal of the high-linearity low-noise amplifier; The off-chip inductance feed module is used for reducing noise of active bias of the grid-source feedback stack amplifying module by utilizing the high-Q value inductance; the active bias module is used for providing active bias for the grid source feedback stack amplifying module; the passive bias module is used for providing passive bias for the grid source feedback stack amplifying module; the grid source feedback stacking amplification module is used for carrying out high linearity processing and amplification on the noise-reduced input signal to obtain a grid source feedback amplification signal; The negative feedback module is used for carrying out negative feedback processing on the gate-source feedback amplified signal to obtain a high-linearity low-noise signal; The output matching module is used for receiving the high-linearity low-noise signal, and obtaining the voltage at two ends of the matching inductor by providing input voltage for the operational amplification module, so as to obtain the voltage difference of the matching inductor; the operational amplification module is used for amplifying the voltages at two ends of the output matching module by using a preset MOS tube according to the matching inductance differential voltage and the logic shaping circuit characteristics to obtain a detection signal; the logic shaping module is used for comparing and judging the voltage of the detection signal and shaping the detection signal, responding to the acquisition of the current detection output signal, alarming through the high-linearity low-noise amplifier and completing the high-linearity low-noise amplification with the current detection function.
2. The high linearity low noise amplifier with current detection function of claim 1, wherein the input matching module comprises a ground matching capacitor C1 and a blocking capacitor C2; The grounding matching capacitor C1 is connected with the input end RFIN of the high-linearity low-noise amplifier and one end of the blocking capacitor C2, and the other end of the blocking capacitor C2 is respectively connected with the off-chip inductance feed module, the grid source feedback stack amplification module and the negative feedback module; the off-chip inductance feed module comprises a series inductance L1 and a grounding capacitance C3; One end of the series inductor L1 is respectively connected with the other end of the blocking capacitor C2, the grid source feedback stack amplifying module and the negative feedback module, and the other end of the series inductor L1 is respectively connected with the grounding capacitor C3 and the active bias module; The active bias module comprises a transistor M3, a resistor R1, a resistor R2 and a grounding resistor R3; One end of the resistor R2 is respectively connected with the other end of the series inductor L1 and the grounding capacitor C3, the other end of the resistor R2 is respectively connected with the grid electrode of the transistor M3, the drain electrode of the transistor M3 and one end of the resistor R1, the source electrode of the transistor M3 is connected with the grounding resistor R3, and the other end of the resistor R1 is respectively connected with the passive bias module, the grid source feedback stack amplifying module, the negative feedback module and the output matching module.
3. The high linearity low noise amplifier with current detection function of claim 2 wherein the passive bias module comprises a resistor R4, a resistor R5, a ground resistor R6, and a ground capacitor C4; One end of the resistor R5 is respectively connected with the other end of the resistor R1, the grid source feedback stack amplifying module, the negative feedback module and the output matching module, and the other end of the resistor R5 is respectively connected with one end of the grounding resistor R6 and one end of the resistor R4 and the grid source feedback stack amplifying module; the gate-source feedback stack amplifying module comprises a transistor M1 and a transistor M2; The grid electrode of the transistor M1 is respectively connected with the other end of the capacitor C2, one end of the series inductor L1 and the negative feedback module, the source electrode of the transistor M1 is grounded, the drain electrode of the transistor M1 is connected with the source electrode of the transistor M2, the grid electrode of the transistor M2 is respectively connected with one end of the resistor R4, the other end of the resistor R5 and the grounding resistor R6, and the drain electrode of the transistor M2 is respectively connected with the other end of the resistor R1, one end of the resistor R5, the negative feedback module and the output matching module.
4. The high linearity low noise amplifier with current detection function of claim 3, wherein the negative feedback module comprises a resistor R7 and a capacitor C5; one end of the resistor R7 is respectively connected with the grid electrode of the transistor M1, the other end of the capacitor C2 and one end of the series inductor L1, the other end of the resistor R7 is connected with one end of the capacitor C5, and the other end of the capacitor C5 is respectively connected with the drain electrode of the transistor M2, the other end of the resistor R1, one end of the resistor R5 and the output matching module; The output matching module comprises a high-linearity low-noise amplifier output matching inductance L2 and a grounding matching capacitor C6; One end Vin0 of the output matching inductance L2 of the high-linearity low-noise amplifier is respectively connected with the other end of the capacitor C5, the drain electrode of the transistor M2, the other end of the resistor R1, one end of the resistor R5 and the operational amplification module; The other end Vin1 of the high-linearity low-noise amplifier output matching inductance L2 is respectively connected with one end of the choke inductance L3, the operational amplification module and the high-linearity low-noise amplifier output RFOUT; The other end of the choke inductance L3 is connected to VDD.
5. The high linearity low noise amplifier with current detection function according to claim 4, wherein the operational amplification module comprises a resistor R8, a resistor R9, a resistor R10, a resistor R11, a grounding resistor R12, a grounding resistor R13, a grounding resistor R14, a resistor R15, a grounding capacitor C7, a transistor M4, a transistor M5, a transistor M6, a transistor M7, a transistor M8, a transistor M9, a transistor M10, a transistor M11, a transistor M12, a transistor M13, a transistor M14, a transistor M15, a transistor M16, a transistor M17, a transistor M18, a transistor M19, a transistor M20, a transistor M21, a transistor M22, a transistor M23, a transistor M24, a transistor M32, a grounding capacitor C8, a capacitor C9, a resistor R16, a resistor R17, a diode D1 and a diode D2; One end of the resistor R8 is connected with one end Vin0 of the output matching inductance L2 of the high-linearity low-noise amplifier, the other end of the resistor R8 is respectively connected with one end of the resistor R10 and the grounding resistor R12, and the other end of the resistor R10 is respectively connected with the grounding resistor R14, the grounding capacitor C8 and the operational amplification input Vp; One end of the resistor R9 is connected with the other end Vin1 of the output matching inductance L2 of the high-linearity low-noise amplifier, the other end of the resistor R9 is respectively connected with one end of the resistor R11 and the grounding resistor R13, and the other end of the resistor R11 is respectively connected with the grounding capacitor C7 and the operational amplification input Vn; The operational amplifier input Vn is connected to the gate of the transistor M16, the source of the transistor M16 is connected to the drain of the transistor M17 and the source of the transistor M18, respectively, and the drain of the transistor M16 is connected to the drain of the transistor M13, the gate of the transistor M14, the gate of the transistor M15, the drain of the transistor M18, one end of the capacitor C9, the cathode of the diode D1, and the gate of the transistor M19; the source of the transistor M13 is connected to VDD, the source of the transistor M4, the drain of the transistor M14, the source of the transistor M15, and the source of the transistor M19, respectively; the gate of the transistor M18 is connected with the operational amplifier input Vp, the drain of the transistor M19 is connected with the source of the transistor M20, the drain of the transistor M20 is connected with the source of the transistor M21, the gate of the transistor M20 is respectively connected with the drain of the transistor M5, the gate of the transistor M22, the source of the transistor M6 and the gate of the transistor M6, the drain of the transistor M21 is respectively connected with one end of the resistor R16, one end of the resistor R17, the drain of the transistor M22 and the operational amplifier output Vout, and the gate of the transistor M21 is respectively connected with the current source, the drain of the transistor M9, the gate of the transistor M11, the gate of the transistor M17 and the gate of the transistor M23; The other end of the capacitor C9 is connected with the other end of the resistor R16, the positive electrode of the diode D1 is connected with the negative electrode of the diode D2, and the positive electrode of the diode D2 is connected with the other end of the resistor R17; The source electrode of the transistor M22 is connected with the drain electrode of the transistor M23, the source electrode of the transistor M23 is connected with the drain electrode of the transistor M24, the grid electrode of the transistor M24 is respectively connected with the source electrode of the transistor M9, the drain electrode of the transistor M10, the grid electrode of the transistor M12 and the grid electrode of the transistor M32, and the source electrode of the transistor M24 is respectively connected with the source electrode of the transistor M10, the source electrode of the transistor M12 and the source electrode of the transistor M32 and grounded; the source electrode of the transistor M17 is connected with the drain electrode of the transistor M32, and the source electrode of the transistor M11 is connected with the drain electrode of the transistor M12; The drain electrode of the transistor M4 is respectively connected with the grid electrode of the transistor M4 and the source electrode of the transistor M5, the drain electrode of the transistor M6 is respectively connected with the grid electrode of the transistor M7 and the source electrode of the transistor M7, the drain electrode of the transistor M7 is respectively connected with the grid electrode of the transistor M8 and the source electrode of the transistor M8, and the drain electrode of the transistor M8 is connected with the drain electrode of the transistor M11; And the output Vout of the operational amplifier is connected with the logic shaping module.
6. The high linearity low noise amplifier with current detection function of claim 5, wherein the logic shaping module comprises a resistor R18, a ground resistor R19, a ground resistor R20, a ground resistor R21, a ground resistor R22, a ground resistor R23, a ground resistor R24, a ground resistor R25, a ground resistor R26, a resistor R27, a ground resistor R28, a ground resistor R29, a transistor M25, a transistor M26, a transistor M27, a transistor M28, a transistor M29, a transistor M30, and a transistor M31; one end of the resistor R18 is connected with the output Vout of the operational amplifier, and the other end of the resistor R18 is connected with the grounding resistor R19 and the grid electrode of the transistor M25 respectively; The source electrode of the transistor M25 is grounded, and the drain electrode of the transistor M25 is respectively connected with one end of a resistor R29, a grounding resistor R20 and the gate electrode of the transistor M27, wherein the other end of the resistor R29 is connected with VDD; one end of the resistor R27 is connected with the output Vout of the operational amplifier, and the other end of the resistor R27 is connected with the grounding resistor R28 and the grid electrode of the transistor M26 respectively; The source electrode of the transistor M26 is grounded, and the drain electrode of the transistor M26 is respectively connected with one end of a resistor R21, a grounding resistor R22 and the gate electrode of the transistor M28, wherein the other end of the resistor R21 is connected with VDD; The source electrode of the transistor M27 is grounded, and the drain electrode of the transistor M27 is respectively connected with one end of a resistor R23 and the gate electrode of the transistor M29, and the other end of the resistor R23 is connected with VDD; the source electrode of the transistor M28 is grounded, and the drain electrode of the transistor M28 is respectively connected with one end of a resistor R24 and the gate electrode of the transistor M31, and the other end of the resistor R24 is connected with VDD; The source electrode of the transistor M29 is grounded, and the drain electrode of the transistor M29 is respectively connected with one end of a resistor R25 and the gate electrode of a transistor M30, and the other end of the resistor R25 is connected with VDD; the source electrode of the transistor M30 is connected with the drain electrode of the transistor M31, and the drain electrode of the transistor M30 is respectively connected with one end of a resistor R26 and a current detection output Vdet; the source of the transistor M31 is grounded.
7. A high linearity low noise amplification method with current detection function, applied to the high linearity low noise amplifier with current detection function as defined in any one of claims 1 to 6, comprising the steps of: s1, receiving an input signal of a high-linearity low-noise amplifier, and preprocessing by using an off-chip inductance feed module to obtain a noise-reduced input signal; S2, carrying out high linearity processing and amplification on the noise-reduced input signal by using a grid source feedback stacking amplification module, and providing a stable working point for the grid source feedback stacking amplification module by providing active bias and passive bias to obtain a grid source feedback amplification signal; wherein the active bias is from an active bias module and the passive bias is from a passive bias module; s3, carrying out negative feedback processing on the gate-source feedback amplified signal to obtain a high-linearity low-noise signal, and receiving the high-linearity low-noise signal through an output matching module to obtain voltages at two ends of a matching inductor; S4, calculating to obtain a matching inductance differential voltage through voltages at two ends of the matching inductance, providing input voltage for the operational amplification module based on the output matching module, and amplifying the voltages at two ends of the matching inductance by using a preset MOS tube according to the matching inductance differential voltage and the characteristics of the logic shaping circuit to obtain a detection signal; S5, comparing and logically operating the detection signals through a logic shaping module to obtain current detection output signals, and alarming through a high-linearity low-noise amplifier to finish high-linearity low-noise amplification with a current detection function.

Description

High-linearity low-noise amplifier with current detection function and method Technical Field The invention belongs to the technical field of integrated circuits, and particularly relates to a high-linearity low-noise amplifier with a power detection function and a method thereof. Background With the continuous development of modern communication technology, the demands for ultra-high linearity amplifier chips are remarkably increased in the fields of extremely high-demand communication and civil use, in the field of extremely high-demand communication of signal quality and anti-interference capability, high-performance and high-reliability wireless communication equipment is urgently needed, and in the field of civil communication, particularly in the application of 5G micro base stations, the demands for high-performance and high-reliability wireless communication equipment are also rapidly increased, so that the development of a low-noise ultra-high linearity amplifier chip meeting the demands is important for improving the performance of a communication system. The ultra-high linearity amplifier has higher power consumption, and when the working current of the ultra-high linearity amplifier is abnormal, the performance of the ultra-high linearity amplifier is abnormal, so that the base station system cannot exert the performance, and the reliability of the ultra-high linearity amplifier is very important for the base station system. Disclosure of Invention Aiming at the defects in the prior art, the high-linearity low-noise amplifier with the power detection function and the method provided by the invention solve the problem that the current abnormality alarm can not be carried out while the high-linearity low-noise amplifier can not be realized. In order to achieve the aim, the invention adopts the technical scheme that on one hand, the invention provides a high-linearity low-noise amplifier with a current detection function, which comprises an input matching module, a grid source feedback stacking amplifying module, an off-chip inductance feeding module and a negative feedback module which are respectively connected with the input matching module, a source biasing module connected with the off-chip inductance feeding module, a passive biasing module and an output matching module which are connected with the grid source feedback stacking amplifying module, an operational amplifying module connected with the output matching module and a logic shaping module connected with the operational amplifying module; The active bias module is further connected with the passive bias module, the grid source feedback stack amplifying module, the negative feedback module and the output matching module, the active bias module is connected with the grid source feedback stack amplifying module through the off-chip inductance feeding module, the passive bias module is further connected with the negative feedback module and the output matching module, and the negative feedback module is further connected with the grid source feedback stack amplifying module. Further, the input matching module is used for receiving the input signal of the high-linearity low-noise amplifier; The off-chip inductance feed module is used for reducing noise of active bias of the grid-source feedback stack amplifying module by utilizing the high-Q value inductance; the active bias module is used for providing active bias for the grid source feedback stack amplifying module; the passive bias module is used for providing passive bias for the grid source feedback stack amplifying module; the grid source feedback stacking amplification module is used for carrying out high linearity processing and amplification on the noise-reduced input signal to obtain a grid source feedback amplification signal; The negative feedback module is used for carrying out negative feedback processing on the gate-source feedback amplified signal to obtain a high-linearity low-noise signal; The output matching module is used for receiving the high-linearity low-noise signal, and obtaining the voltage at two ends of the matching inductor by providing input voltage for the operational amplification module, so as to obtain the voltage difference of the matching inductor; the operational amplification module is used for amplifying the voltages at two ends of the output matching module by using a preset MOS tube according to the matching inductance differential voltage and the logic shaping circuit characteristics to obtain a detection signal; the logic shaping module is used for comparing and judging the voltage of the detection signal and shaping the detection signal, responding to the acquisition of the current detection output signal, alarming through the high-linearity low-noise amplifier and completing the high-linearity low-noise amplification with the current detection function. The invention has the beneficial effects that the high linearity low noise is realized in the