CN-121575374-B - Uniform gas structure for circumferential gas inlet of chamber and semiconductor processing equipment thereof

Abstract

The utility model provides a even gas structure and semiconductor processing equipment of cavity week Xiang Jinqi, wherein, even gas structure sets up in semiconductor processing equipment for to the reaction chamber of semiconductor processing equipment carries reaction gas, even gas structure contains an outer ring water conservancy diversion layer and an inner ring even gas layer, outer ring water conservancy diversion layer and at least one air inlet gas intercommunication, inner ring even gas layer set up seamless annular gas outlet with reaction chamber gas intercommunication. According to the invention, the gas homogenizing structure is arranged in the reaction cavity, so that uniform gas distribution in the circumferential direction of the reaction cavity can be realized.

Inventors

• Request for anonymity
• DAI QIMIN
• Tao Tengyun

Assignees

• 上海创熠微材料科技有限公司

Dates

Publication Date

20260512

Application Date

20250708

Claims (8)

1. 1. A gas distribution structure of a chamber periphery Xiang Jinqi disposed within a semiconductor processing apparatus for delivering a reactant gas to a reaction chamber of the semiconductor processing apparatus, the gas distribution structure comprising: the outer ring diversion layer is in gas communication with at least three air inlet ends; An inner ring gas homogenizing layer, wherein a seamless annular gas outlet is arranged on the inner ring gas homogenizing layer and is in gas communication with the reaction cavity; a plurality of air inlet blocks are arranged between the outer ring diversion layer and the inner ring uniform air layer, a plurality of damping units are arranged on the side walls of the air inlet blocks, one end, close to the outer ring diversion layer, is an air inlet, and one end, close to the inner ring uniform air layer, is an air outlet; a plurality of gas flow channels are formed between the adjacent air inlet blocks, and the sectional areas of the gas flow channels are gradually increased along the circumferential direction.
2. 2. The air distribution structure of claim 1, wherein the air inlets are disposed at an angle θ 1 degrees to a circumferential tangent to the outer annular deflector layer to ensure tangential air intake, wherein 45 ° < θ 1 <90 °.
3. 3. The gas distribution structure of claim 1, wherein the internal and external pressure difference between the gas inlet and the gas outlet is Δp, where Δp >0.
4. 4. The air homogenizing structure of claim 1, wherein the outer annular deflector is further provided with a rotary baffle to adjust air intake resistance.
5. 5. The gas distribution structure of claim 1, wherein the gas distribution structure is integral and non-removable or removable.
6. 6. The gas distribution structure according to any one of claims 1-5, wherein the gas distribution structure is used in combination with a grid structure.
7. 7. The gas distribution structure according to claim 1, wherein the shape of the gas flow passage includes any one of an increasing spiral type, a triangular prism type, and a half-moon type.
8. 8. The gas distribution structure of claim 1, wherein the gas distribution structure is rotatably disposed.

Description

Uniform gas structure for circumferential gas inlet of chamber and semiconductor processing equipment thereof Technical Field The invention relates to the field of semiconductor manufacturing, in particular to a gas homogenizing structure and semiconductor processing equipment thereof. Background The semiconductor processing apparatus requires the input of a reaction gas to effect the deposition of an insulating film or a metal film. In some semiconductor processing equipment, it is desirable to have a side air inlet arrangement for compensating or adjusting the air inlet uniformity. In conventional lateral gas inlet arrangements, the gas inlet axis forms an acute angle (typically 30 ° -60 °) with the central axis of the reaction chamber, which angle results in the incident gas creating a karman vortex street (kjrm_n vortex street) near the chamber inner wall boundary layer (boundary layer) according to the Navier-Stokes equation and Computational Fluid Dynamics (CFD) simulation, forming an asymmetric spiral flow pattern. The turbulence disturbance causes the concentration gradient (concentrationgradient) standard deviation delta C of the reaction gas in the circumferential direction to be more than 15 percent, directly influences the Uniformity of the deposition rate (Uniformity CV value is more than 5 percent), the existing mechanical structure (such as a guide vane scheme) can partially restrict the direction of the gas flow, but the rotating gas flow is difficult to be restrained by a simple mechanical structure, the gas flow diffusion and the direction control are required to be balanced, and meanwhile, the traditional scheme is difficult to realize annular uniform distribution of the outlet end face while ensuring low turbulence. The gas distribution in the circumferential direction inside the reaction cavity is uneven, so that the uniformity of a deposited film layer is affected, and in addition, the gas flow rates in different radial directions cannot be independently controlled, so that the effective adjustment of a treatment process cannot be realized. Disclosure of Invention The invention aims to provide an air homogenizing structure 100 capable of adapting to flow resistance and guiding air flow gradually, which solves the problems of air flow rotation and uneven distribution caused by lateral air inlet. It is another object of the present invention to provide a semiconductor processing apparatus including the above-described gas distribution structure 100. In order to solve the above-mentioned problems, the present invention provides a gas homogenizing structure 100 of a chamber Xiang Jinqi, which is disposed in a semiconductor processing apparatus and is used for delivering a reaction gas to a reaction chamber of the semiconductor processing apparatus, the gas homogenizing structure 100 comprises: the outer ring diversion layer 10 and the inner ring even gas layer 20, the outer ring diversion layer 10 is in gas communication with at least three air inlet ends, and is used for carrying out annular diversion diffusion on the gas introduced by the air inlet ends. The inner ring gas homogenizing layer 20 is provided with a seamless annular gas outlet which is communicated with the gas in the reaction cavity. The outer annular guide layer 10 is in gas communication with the inner annular gas homogenizing layer 20. A plurality of air inlet blocks 30 are arranged between the outer ring diversion layer 10 and the inner ring uniform air layer 20, a plurality of air flow passages are formed between the adjacent air inlet blocks 30, and the air flow passages are used for realizing air communication between the outer ring diversion layer 10 and the inner ring uniform air layer 20. In one embodiment, the outer ring guide 10 includes a plurality of damping units, each of which may be disposed at a sidewall of the air intake block 30. In one embodiment, the air inlet is distributed at an angle θ 1 to the outer annular deflector layer to ensure tangential air intake, where 45 ° < θ 1 <90 °. In one embodiment, the inner ring gas homogenizing layer 20 comprises a plurality of gas flow channels with circumferentially increasing cross-sectional areas, and the shape of the gas flow channels can be adaptively adjusted according to the shape, position and inclination angle of the gas inlet block 30. In one embodiment, the air inlet block 30 is a plurality of triangular prisms arranged in an array, and the gas flow channels are formed between adjacent triangular prisms, wherein the cross-sectional area of the gas flow channels increases gradually along the circumferential direction, and specifically, the cross-sectional area of the gas flow channels is triangular. In one embodiment, the air inlet block 30 is a plurality of half-moon structures arranged in an array, and air flow channels are formed between adjacent half-moon structures, wherein the cross-sectional area of the air flow channels is also increased along