CN-121585110-B - Single-power supply ultra-wideband temperature compensation low-noise amplifier circuit

Abstract

The invention discloses a single-power supply ultra-wideband temperature compensation low-noise amplifier circuit, and belongs to the technical field of radio frequency microwaves. The circuit mainly comprises a front-stage low-noise amplifier module, an interstage temperature compensation equalization module and a rear-stage driving amplifier module. The temperature compensation equalizer module generates differential voltage related to temperature through a three-stage gallium arsenide diode temperature sensing unit, and outputs a control signal through an enhanced FET differential amplifying circuit to drive the voltage-controlled attenuation equalizer to dynamically adjust the attenuation of a radio frequency signal so as to realize gain stability in a frequency band. The grid bias of the FET switch is strictly limited in a transconductance linear adjustment interval by the cooperative design of a blocking capacitor and a voltage dividing resistor, and the interval covers the effective range of 80% of the threshold voltage of the gallium arsenide FET. The circuit adopts a single power supply +5V to supply power, ensures the stable operation of each module through an active bias and power supply filter network, and is suitable for extreme temperature environments such as high-frequency communication, radar and the like.

Inventors

• LIAO XUEJIE
• WANG CETIAN
• LIU YING
• YANG HONGLUN
• DENG CHUN
• ZHANG FAN
• LIU YANNING
• WANG WEIGUANG

Assignees

• 成都嘉纳海威科技有限责任公司

Dates

Publication Date

20260512

Application Date

20260127

Claims (4)

1. 1. A single power supply ultra wideband temperature compensated low noise amplifier circuit comprising: The low noise amplifier module of the front stage, is used for receiving the radio frequency input signal and amplifying with low noise, its output connects to the interstage temperature and supplements the equalizing module, the said low noise amplifier module of the front stage includes two-stage common source E-mode enhancement type amplifying tube TDA1 and TDA2, the input matching circuit includes electric capacity CDA1 and inductance LDA1, connect in parallel negative feedback circuit including electric capacity RDA4, inductance LDA2 and electric capacity CDA2 and connect between grid of TDA1 and LDA3, the interstage matching circuit includes inductance LDA3 and electric capacity CDA2 and connects between drain of TDA1 and grid of TDA2, the active bias circuit includes electric capacity RDA3, enhancement type FET tube TDA3, electric capacity RDA1, electric capacity CDA3 and electric capacity RDA2 and provide grid bias for TDA1, the second stage grid bias circuit includes electric capacity RDA7, RDA6, RDA5 and electric capacity CDA4, electric capacity RDA7 connects with grid of TDA2 through electric capacity RDA5, connect electric capacity CDA6 and electric capacity CDA4 respectively at the same time, and electric capacity CDA6 and electric capacity CDA4 drain of electric capacity CDA4 connect direct current to drain of the drain of electric capacity 6, drain electrode current of the drain-to the drain electrode of TDA 4, electric capacity channel of the drain-to form a multiplexing circuit of the drain electrode current of the drain electrode of the bridge circuit via the electric capacity LDA6, the drain electrode bridge circuit of the electric capacity of the bridge circuit of the electric capacity LDA 4; The temperature sensing unit comprises three stages of serially connected Schottky diodes D1, D2 and D3, the anodes are grounded, the cathodes output temperature related voltages, the differential amplifying circuit comprises enhanced FET tubes TTCE and TTCE and peripheral biasing elements and outputs two paths of control signals V1 and V2, the attenuation equalizing circuit comprises FET switching tubes SW1 and SW2, resistors RTCE1 and RTCE2, capacitors CTCE2 and CTCE3 and an inductor LTCE1, wherein the SW1 grid is connected with V1 and the SW2 grid is connected with V2, the DC blocking capacitors CTCE1 and CTCE4 are respectively positioned between the output of the front stage and the input of the attenuator, the output of the attenuator and the input of the rear stage, and the voltage dividing resistors RTCE and RTCE cooperate to limit the SW1 grid and the SW2 grid to a linear adjustment interval of-1V 0 gallium arsenide; The rear-stage driving amplifier module is used for providing high linearity and high output power radio frequency signal amplification, and the output of the rear-stage driving amplifier module is used as the output of the whole circuit, and adopts a Cascode structure, and comprises a common source tube TPA1 and a common gate tube TPA2, wherein the drain electrode of the TPA1 is directly connected with the source electrode of the TPA2, an input matching circuit comprises a capacitor CTCE4 and an inductor LPA1, a parallel negative feedback circuit comprises a resistor RPA4, the inductor LPA2 and the capacitor CPA2 and is connected between the drain electrode of the TPA2 and the grid electrode of the TPA1, an active bias circuit comprises a resistor RPA3, an enhanced FET tube TPA3, a resistor RPA1, a capacitor CPA3 and a resistor RPA2 and provides grid bias for the TPA1, the common source tube grid bias circuit comprises a resistor RPA7 and a resistor RPA6, and the capacitor CPA4 is grounded through the resistor RPA6 and is connected to the grid electrode of the common gate tube 2 through a resistor RPA5, the drain electrode feed circuit comprises an inductor LPA3 and a capacitor CPA5, one end of the inductor LPA3 is connected to the drain electrode of the TPA2, and the other end of the inductor LPA2 is connected to the capacitor CPA5 and the direct power supply voltage is connected with the capacitor CPA 4; And the single power supply module is used for providing +5V stable power supply for the front-stage low-noise amplifier module, the interstage temperature compensation equalization module and the rear-stage driving amplifier module and inhibiting power supply noise through a filter network.
2. 2. The ultra-wideband temperature compensation low noise amplifier circuit of claim 1, wherein the pre-stage low noise amplifier module realizes drain current sharing of TDA1 and TDA2 through coupling of an inductor LDA4 and LDA3, the total current is not more than 30mA, and the noise coefficient is not more than 1.5dB in the frequency band of 2-20 GHz.
3. 3. The ultra-wideband temperature compensation low noise amplifier circuit of claim 1, wherein the inter-stage temperature compensation equalization module drives the FET switch tube through control signals V1 and V2 to realize dynamic attenuation adjustment of 2-20GHz radio frequency signals in a temperature range of-55 ℃ to +125 ℃, gain fluctuation is not more than +/-0.25 dB, and attenuation adjustment linearity error is less than 1.2%.
4. 4. The ultra-wideband temperature compensated low noise amplifier circuit of claim 1, wherein the single power supply module comprises an active bias circuit and a power filter network, the active bias circuit provides constant current bias for the front stage and the rear stage through enhanced FET tubes TDA3 and TPA3 respectively, and the power filter network comprises a resistor RB1 and a capacitor CB1 element for suppressing power supply ripple and ensuring full temperature region operation stability.

Description

Single-power supply ultra-wideband temperature compensation low-noise amplifier circuit Technical Field The invention relates to the technical field of radio frequency microwaves, in particular to a single-power-supply ultra-wideband temperature compensation low-noise amplifier circuit. Background With the rapid development of high-frequency systems such as 5G millimeter wave communication (24-40 GHz), low-orbit satellite communication (10-30 GHz), phased array radar (2-18 GHz) and the like, an ultra-wideband low-noise amplifier (LNA) is used as a core device of a radio frequency front end, and the comprehensive performance requirements of single power supply, stable full-temperature area, low noise and high output power are provided for the ultra-wideband low-noise amplifier (LNA). However, conventional ultra wideband low noise amplifiers have significant bottlenecks in the following critical technical areas: 1. Multi-power complexity and negative-pressure power supply limitation The existing temperature compensation scheme usually adopts a negative pressure control technology, and a negative pressure power supply is used for providing grid bias for the temperature compensation attenuator. Although such design can realize wide temperature compensation in the DC-40GHz frequency band, an additional negative pressure generating module (such as a charge pump or a DC-DC converter) is required, which results in significant increase of circuit complexity and cost. In addition, the electromagnetic interference and power supply noise problems caused by negative pressure power supply further restrict the integrity of high-frequency signals, and the requirements of high-reliability application scenes are difficult to meet. 2. Contradiction of bandwidth and noise performance In ultra wideband LNA designs, there is an inherent contradiction between bandwidth expansion of the input matching network and noise figure optimization. Conventional distributed matching structures can cover a wide frequency band, but the effect of parasitic parameters can raise the noise figure (typically >3.5 dB). And the narrow-band low-noise design (noise coefficient <2 dB) is difficult to meet the 2-20GHz full-band coverage requirement. In addition, impedance matching in the high frequency band (e.g., 20 GHz) is susceptible to process variations, resulting in return loss degradation (> 10 dB), further limiting the system dynamic range. 3. Influence of process fluctuations on mass production consistency The sensitivity of the traditional temperature compensation circuit to component parameters is high, and particularly, the batch-to-batch deviation of the threshold Voltage (VT) of a transistor and passive elements (inductance and capacitance) is high. VT of gallium arsenide FET The fluctuation range can reach +/-0.2V, so that the temperature compensation control voltages (V1 and V2) are shifted, and gain fluctuation (+ -1 dB or more) is caused. The process fluctuation problem severely restricts the mass production consistency, the yield is generally less than 70%, and the large-scale commercial requirement is difficult to meet. 4. Gain instability due to temperature drift Ambient temperature variations (-55 ℃ to +125 ℃) can significantly affect the operating point of the LNA core device. Taking gallium arsenide FETs as an example, the transconductance (gm) and drain current (IDS) decay non-linearly with increasing temperature, resulting in gain drift (typically ± 1.5 dB). The existing fixed attenuator scheme can partially compensate temperature influence, but cannot dynamically adjust attenuation, and the gain flatness (2 dB) at high and low temperatures is still difficult to meet the requirements of a high-precision communication system. Aiming at the problems, the invention provides a single power supply ultra-wideband low noise amplifier scheme based on a positive pressure control temperature compensation equalizer. By introducing the collaborative design of blocking capacitors (CTCE 1 and CTCE 4) and divider resistors (RTCE and RTCE), a stable direct-current potential reference is provided for a radio frequency channel under a single power supply +5V architecture, and the bias voltage of a switch grid electrode of the FET is driven to be in a sensitive area (-1V to 0V), so that the temperature compensation linearity is remarkably improved. Meanwhile, by combining a three-stage gallium arsenide diode temperature sensing and enhanced FET differential amplifying circuit, high-precision control voltage is dynamically generated, breakthrough performance of +/-0.25 dB gain stability and noise coefficient less than or equal to 1.5dB in a 2-20GHz frequency band is realized, and the problems of multi-power complexity, process sensitivity and temperature drift in the traditional scheme are effectively solved. Disclosure of Invention In order to overcome the defects in the prior art, the invention provides a single-power-supply ultra-wideband tempe