CN-121620213-B - Power device assembly with temperature sensing function

Abstract

The invention provides a power device component with a temperature sensing function, which comprises a main power device and a second mirror image power device which are integrated on the same silicon substrate, wherein the second mirror image power device is biased to measure threshold voltage, and the threshold voltage contains temperature information, so that temperature detection is realized. The power device component with the temperature sensing function has the advantages that the second mirror image power device and the main power device are integrated on the same silicon substrate, so that the power device component has excellent heat tracking performance, the temperature sensing is realized by utilizing the same device structure as the main power device, a new structure is not needed, and an additional ion implantation process is avoided.

Inventors

• Sai .lai

Assignees

• 钰泰半导体股份有限公司

Dates

Publication Date

20260508

Application Date

20260202

Claims (6)

1. 1. A power device assembly with temperature sensing function, characterized by comprising a main power device (M1) and a second mirror power device (M3) integrated on the same silicon-based substrate, and a control circuit, the second mirror power device (M3) being biased to measure a threshold Voltage (VTH) containing temperature information, thereby realizing temperature detection; Biasing the second mirror power device (M3) by applying a preset drain current (I DRAIN ) and a gate voltage to the second mirror power device (M3) such that the second mirror power device (M3) stably operates in a saturation region and is maintained in a low overdrive voltage state, and measuring a gate-source voltage to extract a threshold voltage; The control circuit comprises a driving circuit and a threshold voltage extraction circuit, wherein the driving circuit enables a second mirror power device (M3) to stably work in a saturation region and maintain in a low overdrive voltage state, two input ends of the threshold voltage extraction circuit (A1) are respectively connected with a grid electrode (GATE 2) and a source electrode of the second mirror power device (M3) and are used for extracting a threshold Voltage (VTH) from a grid source Voltage (VGS) and acquiring temperature information from the threshold Voltage (VTH), and the threshold voltage has linear predictability along with temperature change; The driving circuit comprises a drain current source (I1) with one end connected with the source electrode of the second mirror image power device (M3) and the other end grounded, and a first voltage source (V1) connected with the grid electrode (GATE 2) of the second mirror image power device (M3); The threshold voltage extraction circuit (A1) comprises an operational amplifier (AMP 1), a first sampling path which is connected between a source of a second mirror power device (M3) and a first input end of the operational amplifier (AMP 1) and is sampled when the first drain current source (I11) is conducted, a second sampling path which is connected between a source of the second mirror power device (M3) and a first input end of the operational amplifier (AMP 1) and is sampled when the second drain current source (I12) is conducted, and an analog measurement module which is connected with an output end of the operational amplifier (AMP 1); The current value of the second drain current source (I12) is 4 times that of the first drain current source (I11), the operational amplifier (AMP 1) outputs 0V in the first time slot t1, VGS1 in the second time slot t2 and VGS1 in the third time slot t3 VGS2, the first gate source voltage VGS 1is the voltage of the power supply of the second mirror power device (M3) under the current of the first drain current source (I11), the second gate source voltage VGS2 is the voltage of the power supply of the second mirror power device (M3) under the current of the second drain current source (I12), and the output voltage obtained in the third time slot t3 is used as the extracted threshold voltage.
2. 2. The power device assembly of claim 1, wherein the second mirrored power device (M3) is formed by the same process and ion implantation step as the main power device (M1).
3. 3. The power device assembly according to claim 2, characterized in that the ratio of the second mirrored power device (M3) to the main power device (M1) is between 1:1000 and 1:6000; and/or the main power device (M1) and the second mirror power device (M3) are one of N-type or P-type power MOSFET, N-type or P-type FET, N-type or P-type IGBT, NPN-type or PNP-type BJT.
4. 4. The power device assembly of claim 1, wherein the second mirrored power device (M3) is disposed separate from the gate of the main power device (M1) and the second mirrored power device (M3) is disposed separate from the source of the main power device (M1) such that the second mirrored power device (M3) is thermally coupled but electrically isolated from the main power device (M1).
5. 5. The power device assembly of claim 1, wherein the analog measurement module is a digital-to-analog converter or a comparator.
6. 6. The power device assembly of claim 1, further comprising a first mirrored power device (M2) integrated with the main power device on the same silicon-based substrate, the first mirrored power device and the main power device (M1) being formed using the same process and ion implantation steps, and a ratio of the first mirrored power device (M2) to the main power device (M1) being between 1:1000 and 1:6000.

Description

Power device assembly with temperature sensing function Technical Field The invention belongs to the field of temperature sensing, and particularly relates to a power device component with a temperature sensing function. Background In hot plug or in-rush current control applications, the power MOSFET charges a large capacitor at start-up, and may operate in a saturation region in a short time, and at this time, the two ends of the device of the power MOSFET are simultaneously subjected to high current and high voltage, which may generate significant power consumption, and may exceed a Safe Operating Area (SOA) thereof. SOA is essentially a temperature-dependent phenomenon-a sharp rise in junction temperature can cause thermal instability and damage to the MOSFET. Conventional control circuits typically cannot directly feed back junction temperature. In addition, in many implementations, the control circuit and the power MOSFET are separately placed on different chips and then packaged together, and because the thermal conductivity of the chip bonding material (such as epoxy resin) is poor and the thermal coupling is poor, even if the controller chip is integrated with a temperature sensor, only the temperature lagging behind the junction temperature can be sensed, and when the temperature is detected to be over-limit, the element may be damaged, so that it is difficult to effectively prevent thermal instability. Thus, a robust solution requires the integration of a temperature sensor onto the power MOSFET chip. This requirement is particularly critical in high voltage rack applications (e.g., data centers) because MOSFETs can be powered up with drain-source voltage differentials in excess of 60V, and systems greater than 1kW have long-lasting self-heating problems. Currently, most existing temperature sensing methods are not suitable for integration in single metal layer power MOSFET processes, including but not limited to the following techniques: 1) The metal resistor (such as US11774296B 2) integrated in the MOSFET has the disadvantage of being far from the heat generation area, resulting in reduced detection effectiveness, and small signal, requiring subsequent amplifier trimming or self-calibration, increasing cost; 2) The disadvantage of the diode integrated in the MOSFET is the increased process complexity and cost. Disclosure of Invention The invention aims to provide a power device assembly with a temperature sensing function, which has excellent heat tracking performance on a main power device and simple manufacturing process. In order to achieve the above object, the present invention provides a power device assembly with a temperature sensing function, including a main power device and a second mirror power device integrated on the same silicon substrate, the second mirror power device being biased to measure a threshold voltage, the threshold voltage containing temperature information, thereby realizing temperature detection. The second mirror power device and the main power device are formed by adopting the same process and ion implantation steps. And/or the main power device and the second mirror power device are/is one of an N-type or P-type power MOSFET, an N-type or P-type FET, an N-type or P-type IGBT, an NPN-type or PNP-type BJT. The second mirrored power device is disposed separately from the gate of the main power device and the second mirrored power device is disposed separately from the source of the main power device such that the second mirrored power device is thermally coupled but electrically isolated from the main power device. The second mirror power device is biased by applying a preset drain current and gate voltage to the second mirror power device such that the second mirror power device stably operates in a saturation region and is maintained in a low overdrive voltage state, and the gate-source voltage is measured to extract the threshold voltage. The power device assembly comprises a control circuit, wherein the control circuit comprises a driving circuit and a threshold voltage extraction circuit, the driving circuit enables a second mirror image power device to stably work in a saturation region and maintain in a low overdrive voltage state, and two input ends of the threshold voltage extraction circuit are respectively connected with a grid electrode and a source electrode of the second mirror image power device and are used for extracting threshold voltage from grid source voltage and acquiring temperature information from the threshold voltage. The driving circuit comprises a drain current source, one end of which is connected with the source electrode of the second mirror image power device, and the other end of which is grounded, and a first voltage source, which is connected with the grid electrode of the second mirror image power device. The threshold voltage extraction circuit comprises a level shift circuit, an operational amplifier and an analog quantity mea