CN-121641092-B - Voltage regulation circuit and memory

CN121641092BCN 121641092 BCN121641092 BCN 121641092BCN-121641092-B

Abstract

The present disclosure provides a voltage regulation circuit and a memory. The voltage regulation circuit comprises a power supply generation module, a selection control signal generation module and a voltage selection module. The power generation module is configured to generate a plurality of sets of transistor substrate voltages, wherein each set of transistor substrate voltages corresponds to at least one state of the sense amplifier, respectively. The selection control signal generation module is configured to generate a corresponding selection control signal based on a current state of the sense amplifier. The voltage selection module is configured to receive a plurality of sets of transistor substrate voltages and a selection control signal, and to select a corresponding set of transistor substrate voltages to output to the substrate terminals of the transistors in the sense amplifier in response to the selection control signal.

Inventors

LI HONGWEN
SHANG WEIBING

Assignees

长鑫科技集团股份有限公司

Dates

Publication Date: 20260508
Application Date: 20260130

Claims (10)

1. A voltage regulation circuit for a sense amplifier, the voltage regulation circuit comprising: The power supply generation module is configured to generate a plurality of groups of transistor substrate voltages, wherein each group of transistor substrate voltages respectively correspond to at least one state of the sense amplifier; a selection control signal generation module configured to generate a corresponding selection control signal based on a current state of the sense amplifier; And the voltage selection module is respectively connected with the power supply generation module and the selection control signal generation module and is configured to receive the multiple groups of transistor substrate voltages and the selection control signals, and respond to the selection control signals to select a corresponding group of transistor substrate voltages to be output to the substrate ends of the transistors in the sense amplifier.
2. The voltage regulation circuit of claim 1, wherein the voltage regulation circuit is configured to regulate the voltage of the power supply, The power generation module is configured to generate three groups of transistor substrate voltages; The first group of transistor substrate voltages comprise a first-gear PMOS transistor substrate voltage and a first-gear NMOS transistor substrate voltage, the second group of transistor substrate voltages comprise a second-gear PMOS transistor substrate voltage and a second-gear NMOS transistor substrate voltage, and the third group of transistor substrate voltages comprise a third-gear PMOS transistor substrate voltage and a third-gear NMOS transistor substrate voltage; The first-gear PMOS tube substrate voltage, the second-gear PMOS tube substrate voltage and the third-gear PMOS tube substrate voltage are sequentially increased, and the first-gear NMOS tube substrate voltage, the second-gear NMOS tube substrate voltage and the third-gear NMOS tube substrate voltage are sequentially decreased.
3. The voltage regulation circuit of claim 2, wherein the voltage regulation circuit is configured to regulate the voltage of the power supply, The selection control signal generation module is further configured to generate the selection control signal of a first value in a case where the sense amplifier is in a standby state; the voltage selection module is further configured to select a first set of the transistor substrate voltages to output to the sense amplifier in response to the selection control signal of a first value.
4. The voltage regulation circuit of claim 2, wherein the voltage regulation circuit is configured to regulate the voltage of the power supply, The selection control signal generation module is further configured to generate the selection control signal of a second value in the case that the sense amplifier is in an operating state; the voltage selection module is further configured to select a second set of the transistor substrate voltages to output to the sense amplifier in response to the selection control signal of a second value.
5. The voltage regulation circuit of claim 2, wherein the voltage regulation circuit is configured to regulate the voltage of the power supply, The selection control signal generation module is further configured to generate the selection control signal of a third value in a case where the sense amplifier is in a work completion state; The voltage selection module is further configured to select a third set of the transistor substrate voltages to output to the sense amplifier in response to the selection control signal of a third value.
6. The voltage regulation circuit of claim 2, wherein the voltage regulation circuit is configured to regulate the voltage of the power supply, The selection control signal generation module is further configured to generate and maintain the selection control signal of the second value until the refresh state is finished when the memory block where the sense amplifier is located is in the refresh state; the voltage selection module is further configured to select a second set of the transistor substrate voltages to output to the sense amplifier in response to the selection control signal of a second value.
7. The voltage regulation circuit of claim 1, wherein the voltage regulation circuit is configured to regulate the voltage of the power supply, The selection control signal generation module is further configured to receive and determine a current state of the sense amplifier based on a standby command, an activation command, and a memory block enable command; the selection control signal generation module is further configured to receive and determine, based on a refresh command and a self-refresh command, that a memory block in which the sense amplifier is located is in a refresh state.
8. The voltage regulation circuit of claim 1, further comprising a process detection control unit; The process detection control unit is configured to detect a process angle of a transistor in the sense amplifier; The power supply generation module is further configured to generate corresponding transistor substrate voltages based on process angles of transistors in the sense amplifier, wherein the PMOS transistor substrate voltages corresponding to the SS process angle, the TT process angle and the FF process angle are sequentially increased, and the NMOS transistor substrate voltages corresponding to the SS process angle, the TT process angle and the FF process angle are sequentially decreased.
9. The voltage regulation circuit of claim 1, further comprising a temperature detection control unit; the temperature detection control unit is configured to detect the real-time ambient temperature of the sense amplifier; The power supply generation module is further configured to adjust the transistor substrate voltage based on the change of the ambient temperature, wherein the PMOS transistor substrate voltage increases with the increase of the ambient temperature, and the NMOS transistor substrate voltage decreases with the increase of the ambient temperature.
10. A memory comprising a sense amplifier and a voltage regulation circuit according to any one of claims 1 to 9; The voltage regulation circuit is configured to output a corresponding transistor substrate voltage to a substrate terminal of a transistor in the sense amplifier based on a current state of the sense amplifier.

Description

Voltage regulation circuit and memory Technical Field The application relates to, but is not limited to, a voltage regulation circuit and a memory. Background In the field of semiconductor memory, particularly Dynamic Random Access Memory (DRAM), sense amplifiers (SENSE AMPLIFIER, SA) are used to detect and amplify small voltage differences in memory cells, which are critical components to ensure data read/write accuracy. As process nodes continue to shrink, the reduction in device size brings higher integration and also exacerbates leakage current problems, especially at junction regions (junctions) of transistors, which become important factors affecting power consumption and performance. In the related art, junction leakage is generally suppressed by optimizing a manufacturing process, such as improving a gate induced drain leakage current (GIDL), off-state leakage current (Ioff), or gate leakage current (Igate). However, in these methods, there is a lack of a mechanism capable of flexibly regulating the transistor substrate voltage for the sense amplifier in different states to effectively suppress junction leakage. That is, the related technical scheme is difficult to dynamically adjust the substrate voltage of the transistor according to the actual working state of the sense amplifier, so that the leakage current control is not fine enough, and particularly in products such as LPDDR (low power consumption) with high density, the integral static leakage accumulation effect is obvious, and the energy efficiency and the market competitiveness of a chip are seriously affected. Disclosure of Invention The embodiment of the disclosure provides a voltage regulation circuit, which comprises a power supply generation module and a voltage selection module, wherein the power supply generation module is configured to generate a plurality of groups of transistor substrate voltages, each group of transistor substrate voltages respectively corresponds to at least one state of a sensitive amplifier, each group of transistor substrate voltages comprises a PMOS transistor substrate voltage and an NMOS transistor substrate voltage, the selection control signal generation module is configured to generate a corresponding selection control signal based on the current state of the sensitive amplifier, and the voltage selection module is respectively connected with the power supply generation module and the selection control signal generation module and is configured to receive the plurality of groups of transistor substrate voltages and the selection control signal, and select a corresponding group of transistor substrate voltages to output to a substrate end of a transistor in the sensitive amplifier in response to the selection control signal. In some embodiments of the disclosure, the power generation module is configured to generate three groups of transistor substrate voltages, wherein a first group of transistor substrate voltages comprises a first-gear PMOS transistor substrate voltage and a first-gear NMOS transistor substrate voltage, a second group of transistor substrate voltages comprises a second-gear PMOS transistor substrate voltage and a second-gear NMOS transistor substrate voltage, a third group of transistor substrate voltages comprises a third-gear PMOS transistor substrate voltage and a third-gear NMOS transistor substrate voltage, the first-gear PMOS transistor substrate voltage, the second-gear PMOS transistor substrate voltage and the third-gear PMOS transistor substrate voltage sequentially increase, and the first-gear NMOS transistor substrate voltage, the second-gear NMOS transistor substrate voltage and the third-gear NMOS transistor substrate voltage sequentially decrease. In some embodiments of the present disclosure, the selection control signal generation module is further configured to generate the selection control signal of a first value if the sense amplifier is in a standby state, and the voltage selection module is further configured to select a first set of the transistor substrate voltages to output to the sense amplifier in response to the selection control signal of the first value. In some embodiments of the present disclosure, the selection control signal generation module is further configured to generate a second value of the selection control signal if the sense amplifier is in an operational state, and the voltage selection module is further configured to select a second set of the transistor substrate voltages to output to the sense amplifier in response to the second value of the selection control signal. In some embodiments of the present disclosure, the selection control signal generation module is further configured to generate a third value of the selection control signal if the sense amplifier is in a work completion state, and the voltage selection module is further configured to select a third set of the transistor substrate voltages to output to the sense amplifier i