CN-121666079-B - Piezoelectric micropump heat dissipation chip, preparation method and piezoelectric heat dissipation device

CN121666079BCN 121666079 BCN121666079 BCN 121666079BCN-121666079-B

Abstract

The invention relates to the technical field of semiconductors, and discloses a piezoelectric micropump radiating chip, a preparation method and a piezoelectric radiating device, wherein a piezoelectric ceramic double-boosting structure corresponding to a gas-cooled radiating cavity structure at a corresponding area of a first surface is arranged on a second surface of a metal layer, the piezoelectric ceramic double-boosting structure is utilized to drive the metal layer to generate first boosting deformation and second boosting deformation along the vertical direction, and then the cavity structure is driven to execute synchronous volume adjustment actions in a first area and a second area which are discontinuous in the metal layer, the driving strength and the flow efficiency of gas in the air-cooled heat dissipation cavity structure are improved, the first boosting deformation and the second boosting deformation which are discontinuous in areas and synchronous in execution are utilized, and under the condition that the vibration amplitude and the resonance frequency of the piezoelectric micropump heat dissipation chip are maintained at a higher level, the vibration stress value of the piezoelectric ceramic structure and the probability of ceramic splitting caused by vibration are reduced, and the durability of the piezoelectric micropump heat dissipation chip is remarkably improved.

Inventors

LI HUI
SHAO ZHENYI
DU WENYI
LIU JIANGUO
SUN YUNJIE
ZHANG BO
HU TING
FAN BAOWEI
HUANG XIAONA
DING YICHAO

Assignees

成都工业学院

Dates

Publication Date: 20260505
Application Date: 20260206

Claims (9)

1. A piezoelectric micropump heat dissipation chip, comprising: The metal layer is configured to be provided with a first surface and a second surface which are oppositely arranged, and the first surface is provided with a cavity structure for air cooling and heat dissipation; The piezoelectric ceramic layer is arranged on the second surface of the metal layer and is provided with a piezoelectric ceramic double-boosting structure, and the piezoelectric ceramic double-boosting structure is configured to generate first boosting deformation and second boosting deformation which are perpendicular to the metal layer when being subjected to the action of an electric field; Wherein, piezoceramics double boost structure includes: The first annular boosting structure and the second annular boosting structure are configured to be arranged in a double boosting area of the second surface of the metal layer concentrically; a boost synchronizing structure configured to connect the first annular boost structure and the second annular boost structure that are concentrically arranged; The first boosting deformation and the second boosting deformation drive the cavity structure to execute synchronous volume adjustment actions in a first area and a second area of the metal layer respectively.
2. The piezoelectric micropump thermal dissipation chip of claim 1 wherein the vertical projection area of the second side of the metal layer on the first side of the metal layer is configured to be covered by the vertical projection area of the cavity structure on the first side of the metal layer such that the first boost deformation generated by the first annular boost structure and the second boost deformation generated by the second annular boost structure cooperate to act on the cavity structure.
3. The piezoelectric micropump heat dissipation chip of claim 1 wherein the inner diameter of the first annular boosting structure is greater than the outer diameter of the second annular boosting structure, the boosting synchronization structure being configured to connect the inner diameter of the first annular boosting structure with the outer diameter of the second annular boosting structure.
4. The piezoelectric micropump heat dissipation chip of claim 3 wherein said boost synchronization structure comprises: The plurality of boosting synchronous blocks are configured to be annularly arranged between the first annular boosting structure and the second annular boosting structure at equal angles; and each boosting synchronous block is connected with a first position, where the inner diameter of the first annular boosting structure at the corresponding position is close to the second annular boosting structure, and a second position, where the outer diameter of the second annular boosting structure is close to the first annular boosting structure.
5. The piezoelectric micropump radiating chip of claim 3 wherein said first annular boosting structure has an inner radius in the range of 2.5mm to 3.5mm and an outer radius in the range of 3.7mm to 4.5mm.
6. The piezoelectric micropump radiating chip of claim 3 wherein said second annular boosting structure has an inner radius in the range of 1.4mm to 1.6mm and an outer radius in the range of 1.9mm to 2.1mm.
7. The piezoelectric micropump radiating chip of claim 3 wherein the height of said first annular boosting structure and said second annular boosting structure is in the range of 0.15mm to 0.25mm.
8. A method for preparing a piezoelectric micropump heat dissipation chip, which is used for preparing the piezoelectric micropump heat dissipation chip according to any one of claims 1 to 7, and includes the following steps: s1, preparing a piezoelectric ceramic sample wafer to form a region to be etched on the piezoelectric ceramic sample wafer; S2, executing a first etching action on the prepared piezoelectric ceramic sample wafer, wherein the first etching action is configured to etch in a first etchant consisting of 6% BHF, 4% HNO 3 and 90% deionized water for 160 seconds to 200 seconds so as to finish initial etching; S3, executing a first cleaning action on the piezoelectric ceramic sample wafer subjected to the first etching action, wherein the first cleaning action is configured to be performed by adopting deionized water to wash so as to remove loose films and residual acid; S4, executing a second etching action on the piezoelectric ceramic sample wafer after the first cleaning action, wherein the second etching action is configured to etch for 20 seconds to 40 seconds in a second etchant consisting of 40% HCl and 60% deionized water so as to form a piezoelectric ceramic double-boosting structure after the area to be etched is etched; S5, executing a second cleaning action on the piezoelectric ceramic double-boosting structure after the second etching action, wherein the second cleaning action is configured to comprise deionized water flushing, drying and photoresist removing; And S6, silver plating the silver-plated electrode on the piezoelectric ceramic double-boosting structure after the second cleaning action, and pasting the prepared piezoelectric ceramic double-boosting structure with the electrode on the metal layer.
9. A piezoelectric radiator device comprising a piezoelectric micropump radiating chip according to any one of claims 1 to 7.

Description

Piezoelectric micropump heat dissipation chip, preparation method and piezoelectric heat dissipation device Technical Field The invention relates to the technical field of semiconductors, in particular to a piezoelectric micropump heat dissipation chip, a preparation method and a piezoelectric heat dissipation device. Background With the continuous rapid development of global intelligent electronic devices in the directions of miniaturization, high performance, high calculation power and high integration, the cooling and heat dissipation problems have become an important bottleneck which restricts the improvement of the performance of the devices and influences the reliability. The thermal management technology is mainly divided into two major categories, namely passive heat dissipation and active heat dissipation. Passive heat dissipation schemes such as heat sinks and heat pipes have long been dominant, but as the heat flux density of new generation electronic devices (e.g., smart phones, wearable devices) continues to rise, it is often difficult to independently meet the demands. Traditional mechanical fan schemes are relatively mature, but gradually show limitations in application scenes with limited space and sensitive power consumption. Therefore, there is an urgent need to develop miniaturized, low power consumption active heat dissipation techniques and related solutions. The micropump radiating chip is a novel radiating technology developed based on the inverse effect of piezoelectric ceramics. The working principle is that the inverse piezoelectric effect of the piezoelectric material is utilized, the piezoelectric ceramic material can be stretched/compressed to deform under the action of an electric field, and the metal sheet below the ceramic sheet is driven to be raised upwards or recessed downwards, so that the cavity volume of the pump is changed, suction force or pressure force is generated on gas, and unidirectional flow of the gas is formed under the action of the one-way valve. At present, domestic smart phone manufacturers are limited by the manufacturing process, chips generate larger heat under the same performance, the heat dissipation requirement is urgent, and the micropump air cooling heat dissipation module is directly embedded in the smart phone to become standard, so that the power consumption is reduced by 90% compared with the traditional air cooling scheme. The technical integration not only greatly improves the performance of the intelligent mobile phone, but also can effectively solve the heat dissipation problem during high-load operation, reduces the frequency reduction and the clamping phenomenon caused by overheating, and improves the user experience. However, in practical applications, the efficiency performance of the piezoelectric micropump heat dissipation chip is determined, and not only the resonant frequency of the piezoelectric micropump heat dissipation chip needs to be high enough, but also the vibration starting amplitude of the piezoelectric micropump heat dissipation chip needs to be high enough (on the one hand, the wind speed generated by the high resonant frequency is high to facilitate heat dissipation, on the other hand, the frequency higher than 20khz is ultrasonic to facilitate the silencing effect, and the air pressure generated by the high amplitude is high to facilitate the generation of air pressure), but the performance improvement of the piezoelectric micropump heat dissipation chip often causes cracks and even damages to the bonded piezoelectric ceramic chip caused by long-term vibration. Therefore, how to consider the performance of the heat dissipation chip of the piezoelectric micropump and the stress of the piezoelectric ceramic part caused by vibration at the same time so as to reduce the probability of ceramic splitting caused by vibration is a technical problem to be solved. Disclosure of Invention The invention provides a piezoelectric micropump heat dissipation chip, a preparation method and a piezoelectric heat dissipation device, and aims to solve at least one technical problem. In order to achieve the above object, the present invention provides a heat dissipation chip for a piezoelectric micropump, comprising: The metal layer is configured to be provided with a first surface and a second surface which are oppositely arranged, and the first surface is provided with a cavity structure for air cooling and heat dissipation; The piezoelectric ceramic layer is arranged on the second surface of the metal layer and is provided with a piezoelectric ceramic double-boosting structure, and the piezoelectric ceramic double-boosting structure is configured to generate first boosting deformation and second boosting deformation which are perpendicular to the metal layer when being subjected to the action of an electric field; The first boosting deformation and the second boosting deformation drive the cavity structure to execute synchronous volum