CN-121690092-B - High dynamic linearity's power amplifier

CN121690092BCN 121690092 BCN121690092 BCN 121690092BCN-121690092-B

Abstract

The application belongs to the field of radio frequency integrated circuits, and particularly relates to a high-dynamic linearity power amplifier which comprises a power amplifier tube HBT0, an input matching network, an output matching network, a radio frequency choke network and an active bias circuit, wherein a base electrode of the power amplifier tube HBT0 is connected with the input matching network and the active bias circuit, radio frequency signals flow into the power amplifier tube HBT0 through the input matching network, a collector electrode of the power amplifier tube HBT0 is connected with the radio frequency choke network and the output matching network, the other end of the radio frequency choke network is connected with a power VCC, the other end of the output matching network is connected with a radio frequency output port, and the active bias circuit is connected with a base electrode of the power amplifier tube HBT 0. The application can provide compensation current under the condition that the power amplifier tube HBT0 works at high power so as to stabilize bias offset of the power amplifier tube HBT0 under high power and improve linearity under high power.

Inventors

LU ZHENGWEI
LIU HUI
JIANG TIANTIAN
LI CHENCHENG
CHEN LANG
GE ZEYU

Assignees

苏州悉芯射频微电子有限公司

Dates

Publication Date: 20260508
Application Date: 20260212

Claims (4)

1. The power amplifier with high dynamic linearity is characterized by comprising a power amplifier tube HBT0, an input matching network, an output matching network, a radio frequency choke network and an active bias circuit, wherein: The base electrode of the power amplifier tube HBT0 is connected with an input matching network and an active bias circuit, radio frequency signals flow into the power amplifier tube HBT0 through the input matching network, and the collector electrode of the power amplifier tube HBT0 is connected with a radio frequency choke network and an output matching network; the other end of the radio frequency choke network is connected with a power supply VCC; the other end of the output matching network is connected to a radio frequency output port and is used for converting the port impedance into load impedance required by the power amplifier tube HBT 0; The active bias circuit is connected to the base electrode of the power amplifier tube HBT0 and is used for providing bias current required by the power amplifier tube HBT 0; a base resistor R0 is arranged between the base of the power amplifier tube HBT0 and the input matching network and the active bias circuit, one end of the base resistor R0 is connected with the base of the power amplifier tube HBT0, and the other end of the base resistor R0 is connected to the input matching network and the active bias circuit; The active bias circuit includes: A transistor HBT1, wherein a collector of the transistor HBT1 is connected to a power source VCC, a collector of the transistor HBT2 and a collector of the transistor HBT5, a base of the transistor HBT1 is connected to an emitter of the transistor HBT2, a collector of the transistor HBT3 and a first end of a resistor R1, the other end of the resistor R1 is connected to a base of the HBT3, and an emitter of the transistor HBT3 is connected to an emitter of the transistor HBT1 and then commonly connected between a base resistor R0 and an input matching network; a transistor HBT4, wherein the base and collector of the transistor HBT4 are connected to the base of the transistor HBT2 and one end of a capacitor C1, and the other end of the capacitor C1 is grounded; A transistor HBT6, wherein a collector of the transistor HBT6 is connected to one end of a resistor R4, an emitter of the transistor HBT4 is connected to a base of the transistor HBT5, and the other end of the resistor R4 is connected to an operating voltage VEN; and a transistor HBT5, wherein the emitter of the transistor HBT5 is connected to one end of a resistor R2, the other end of the resistor R2 is connected to the base of a transistor HBT6 and one end of a resistor R3, the other end of the resistor R3 is connected to the ground, and the emitter of the transistor HBT6 is connected to the ground.
2. A power amplifier of high dynamic linearity according to claim 1, wherein said transistor HBT6 is placed close to the power amplifier transistor HBT 0.
3. A power amplifier of high dynamic linearity according to claim 2, characterized in that the collector current of the transistor HBT6 increases when the temperature of the power amplifier transistor HBT0 increases.
4. A high dynamic linearity power amplifier according to claim 1, wherein said transistor HBT3 is placed close to the power amplifier transistor HBT 0.

Description

High dynamic linearity's power amplifier Technical Field The application belongs to the field of radio frequency integrated circuits, and particularly relates to a high-dynamic linearity power amplifier. Background Power amplifiers are commonly used in output stages of radio frequency transceivers to amplify radio frequency signals to a certain power and then transmit the amplified radio frequency signals via an antenna. With the development of communication systems, the modulation order of radio frequency signals is continuously increased to meet the requirement of increasing the channel capacity of the communication systems, and higher modulation order puts higher demands on the linearity of the power amplifier. The power amplifier is generally not always turned on during operation, but intermittently operates according to a transceiving mode, and the operation time is different according to the size of a transmitted data packet, and frequent turning on and off can cause temperature change and linearity deterioration of the power amplifier under dynamic conditions, which puts higher demands on the turn-on response and the temperature response of the power amplifier. Disclosure of Invention The embodiment of the application provides a power amplifier with high dynamic linearity, which solves the problems of insufficient thermal stability and poor linearity of the existing power amplifier. The power amplifier with high dynamic linearity provided by the embodiment of the application comprises a power amplifier tube HBT0, an input matching network, an output matching network, a radio frequency choke network and an active bias circuit, wherein: the base electrode of the power amplifier tube HBT0 is connected to an input matching network and an active bias circuit, radio frequency signals flow into the power amplifier tube HBT0 through the input matching network, and the collector electrode of the power amplifier tube HBT0 is connected with a radio frequency choke network and an output matching network; the other end of the radio frequency choke network is connected with a power supply VCC; the other end of the output matching network is connected to a radio frequency output port and is used for converting the port impedance into load impedance required by the power amplifier tube HBT 0; an active bias circuit is connected to the base of the power amplifier tube HBT0 for providing the bias current required by the power amplifier tube HBT 0. Further, a base resistor R0 is arranged between the base of the power amplifier tube HBT0 and the input matching network and the active bias circuit, one end of the base resistor R0 is connected with the base of the power amplifier tube HBT0, and the other end of the base resistor R0 is connected to the input matching network and the active bias circuit. Further, the active bias circuit includes: A transistor HBT1, wherein the collector of the transistor HBT1 is connected to a power source VCC, and the collectors of the transistor HBT2 and the transistor HBT5, the base of the transistor HBT1 is connected to the emitter of the transistor HBT2, the collector of the transistor HBT3, and the first end of the resistor R1, the other end of the resistor R1 is connected to the base of the HBT3, and the emitter of the transistor HBT3 is connected to the emitter of the transistor HBT1, and then commonly connected between the base resistor R0 and the input matching network; a transistor HBT4, wherein the base and collector of the transistor HBT4 are connected to the base of the transistor HBT2 and one end of a capacitor C1, and the other end of the capacitor C1 is grounded; a transistor HBT6, wherein a collector of the transistor HBT6 and one end of a resistor R4, an emitter of the transistor HBT4 is connected to a base of the transistor HBT5, and the other end of the resistor R4 is connected to an operating voltage VEN; And a transistor HBT5, wherein the emitter of the transistor HBT5 is connected to one end of a resistor R2, the other end of the resistor R2 is connected to the base of the transistor HBT6 and one end of a resistor R3, and the other end of the resistor R3 is connected to the ground. The emitter of transistor HBT6 is connected to ground. Further, the transistor HBT6 is placed close to the power amplifier HBT 0. Further, as the temperature of the power amplifier transistor HBT0 increases, the collector current of the transistor HBT6 increases. Further, the transistor HBT3 is placed close to the power amplifier HBT 0. Compared with the prior art, the application has the beneficial effects that: The application can provide compensation current under the condition that the power amplifier tube HBT0 works at high power to stabilize bias offset of the power amplifier tube HBT0 under high power, improve linearity under high power, and greatly improve thermal stability of the power amplifier tube HBT0 under high power due to self-heating effect by the base resistor R0. The appl