CN-121728884-B - Single-side light-emitting high-brightness LED device, preparation method thereof and car lamp

Abstract

The application provides a single-sided light-emitting high-brightness LED device, a preparation method thereof and a car lamp, wherein the preparation method of the high-brightness LED device comprises the steps of fixedly connecting a color conversion membrane with an LED chip to form a light-emitting unit; the high-brightness LED device comprises a light emitting unit, a first bonding layer, a second bonding layer, a dielectric film, a first bonding layer, a second bonding layer and a high-precision coating film, wherein the light emitting unit is arranged on a bearing plate, the LED chip is arranged on one side, far away from the bearing plate, of the color conversion film, the dielectric film is arranged on the light emitting unit by the aid of the first bonding layer, the first bonding layer is in contact with a backlight surface of the LED chip, the light emitting unit is subjected to deposition coating to form a reflecting film on the side wall of the light emitting unit, the surface and the side face of the dielectric film, the first bonding layer is processed to enable the viscosity of the first bonding layer to be lowered, the second bonding layer is formed on the surface, far away from the first bonding layer, of the dielectric film and the light emitting unit are peeled off by the aid of the bonding effect of the second bonding layer, and the high-precision requirements of the preparation process of the high-brightness LED device can be reduced, and the yield is improved.

Inventors

• QU JUNJIE
• JIANG PEI
• LIU FANG
• SUN LEIMENG

Assignees

• 华引芯（武汉）科技有限公司

Dates

Publication Date

20260512

Application Date

20260225

Claims (8)

1. 1. The preparation method of the high-brightness LED device is characterized by comprising the following steps of: Fixedly connecting a color conversion film with an LED chip to form a light-emitting unit, wherein the LED chip comprises a main light-emitting surface and a backlight surface which are oppositely arranged, and the color conversion film is positioned on one side of the main light-emitting surface away from the backlight surface; The light-emitting unit is arranged on a bearing plate, wherein the LED chip is positioned at one side of the color conversion membrane away from the bearing plate; A dielectric film is arranged on the light-emitting unit by utilizing a first bonding layer, wherein the first bonding layer is contacted with the backlight surface of the LED chip; Depositing and coating the light-emitting unit to form a reflecting film on the side wall of the light-emitting unit, the surface and the side surface of the dielectric film; treating the first adhesive layer to reduce the adhesiveness of the first adhesive layer to the light-emitting unit; forming a second adhesive layer on a surface of the dielectric film sheet on a side facing away from the first adhesive layer; and peeling the dielectric film sheet from the light-emitting unit by using the bonding action of the second bonding layer.
2. 2. The method of manufacturing a high luminance LED device according to claim 1, wherein a backlight surface of the LED chip is provided with a first pad electrode and a second pad electrode, the first pad electrode is different from the second pad electrode in shape or area, and edges of the first pad electrode and the second pad electrode are flush with edges of the color conversion film.
3. 3. The method of manufacturing a high luminance LED device according to claim 2, wherein a surface of the first pad electrode facing away from the main light-emitting surface and a surface of the second pad electrode facing away from the main light-emitting surface are coplanar.
4. 4. The method of manufacturing a high luminance LED device according to claim 1, wherein the first adhesive layer comprises a heat-sensitive material or a photosensitive material, so that the first adhesive layer is reduced in viscosity after heat treatment or light treatment.
5. 5. The method of manufacturing a high brightness LED device according to claim 4, wherein the step of treating the first adhesive layer to decrease the adhesiveness of the first adhesive layer to the light emitting unit comprises: and baking the light-emitting unit by utilizing a heating carrier below the bearing plate so as to maintain the ambient temperature of the first bonding layer within a range of 180-250 ℃ and the maintaining time of 30-75 seconds.
6. 6. The method of manufacturing a high brightness LED device according to claim 5, wherein the step of depositing a coating film on the light emitting unit to form a reflective film on the side wall of the light emitting unit, the surface and the side surface of the dielectric film sheet, wherein the process temperature of depositing the coating film is less than 180 ℃.
7. 7. The method of manufacturing a high brightness LED device according to claim 4, wherein the step of treating the first adhesive layer to decrease the adhesiveness of the first adhesive layer to the light emitting unit comprises: And emitting infrared light or ultraviolet light to the first bonding layer by using light treatment equipment arranged above the dielectric film sheet, and continuously irradiating the first bonding layer for 5 to 20 seconds.
8. 8. The method of manufacturing a high brightness LED device according to claim 7, wherein the dielectric film is a transparent sapphire sheet or a transparent alkali-free glass sheet.

Description

Single-side light-emitting high-brightness LED device, preparation method thereof and car lamp Technical Field The application relates to the technical field of semiconductors, in particular to a single-sided light-emitting high-brightness LED device, a preparation method thereof and a car lamp. Background A light emitting Diode (LIGHT EMITTING Diode, abbreviated as LED) device is an electroluminescent semiconductor light emitting device, and has been widely used in the fields of lighting, display, medical treatment, optical communication, etc. at present, the light emitting Diode has the advantages of low energy consumption, small volume, long life, good stability, fast response, stable light emission wavelength, etc. The LED device with single-sided light emission has advantages of high brightness, strong light emission collimation, and the like, and the LED device with single-sided light emission generally comprises an LED chip for realizing a light emitting function, and a color conversion layer disposed on an ejection surface of the LED chip. A typical LED chip has a three-dimensional light emitting structure and has five light emitting surfaces, which are a top light emitting surface and four side light emitting surfaces, respectively, and in order to enable the LED device to realize single-sided light emission, it is necessary to form a reflective film on the side light emitting surfaces of the LED chip and the side walls of the color conversion layer. In order to further improve brightness and improve heat dissipation, the applicant innovatively adopts a deposition coating mode to form a reflecting layer on the side light-emitting surface of the LED chip and the side wall of the color conversion layer respectively. The applicant further found that there are two processes for forming the reflective film by depositing the side wall, taking the deposited film as an example of the LED chip, one is to form the reflective film on the top light emitting surface and the four side light emitting surfaces of the LED chip, then remove the reflective film on the top light emitting surface by physical grinding, and the other is to form the photoresist on the top surface of the LED chip, then form the reflective film on the top light emitting surface and the four side light emitting surfaces of the LED chip, then tear the reflective film on Jin Quchu photoresist, and then soak to remove the photoresist. The two modes have extremely high requirements on the precision of equipment, such as high-precision grinding equipment or a high-precision sheet arranging machine, and the problem of low yield is easily caused, such as that the reflecting film of the side luminous surface is easily caused to partially fall off by physical grinding, and photoresist is easily corroded and fixed on the adhesive layer of the LED chip by soaking in an organic solvent, so that the LED chip is displaced and falls off. Therefore, how to prepare a high-brightness LED device with single-side light emission under the conditions of reducing the high-precision requirement on equipment and achieving high yield is a problem to be solved by those skilled in the art. Disclosure of Invention The application provides a single-side light-emitting high-brightness LED device, a preparation method thereof and a car lamp, which can effectively solve the problems of high equipment precision requirement and low yield of the single-side light-emitting high-brightness LED device in the related technology. In a first aspect, the present application provides a method for manufacturing a high brightness LED device, the method for manufacturing a high brightness LED device comprising: Fixedly connecting a color conversion film with an LED chip to form a light-emitting unit, wherein the LED chip comprises a main light-emitting surface and a backlight surface which are oppositely arranged, and the color conversion film is positioned on one side of the main light-emitting surface away from the backlight surface; The light-emitting unit is arranged on a bearing plate, wherein the LED chip is positioned at one side of the color conversion membrane away from the bearing plate; A dielectric film is arranged on the light-emitting unit by utilizing a first bonding layer, wherein the first bonding layer is contacted with the backlight surface of the LED chip; Depositing and coating the light-emitting unit to form a reflecting film on the side wall of the light-emitting unit, the surface and the side surface of the dielectric film; treating the first adhesive layer to reduce the adhesiveness of the first adhesive layer to the light-emitting unit; forming a second adhesive layer on a surface of the dielectric film sheet on a side facing away from the first adhesive layer; and peeling the dielectric film sheet from the light-emitting unit by using the bonding action of the second bonding layer. Optionally, the backlight surface of the LED chip is provided with a first pad e