CN-121751776-B - Photoelectric cooperative regulation and control system and method for solid-state microwave power device

CN121751776BCN 121751776 BCN121751776 BCN 121751776BCN-121751776-B

Abstract

The invention provides a photoelectric cooperative regulation system and method of a solid-state microwave power device, which relate to the technical field of microelectronics, wherein a gallium nitride high-electron-mobility transistor chip is used for generating microwave signals under the modulation of a grid electric field, an ultraviolet light source is used for emitting ultraviolet light to the gallium nitride high-electron-mobility transistor chip, the energy of emitted photons is smaller than the forbidden band width of a barrier layer and is larger than or equal to the forbidden band width of a channel layer and a buffer layer, and a control unit is used for synchronously controlling the working time sequence of the ultraviolet light source and the gallium nitride high-electron-mobility transistor chip, and the working pulse width of the ultraviolet light source is larger than the working pulse width of the gallium nitride high-electron-mobility transistor chip. The system actively suppresses the defect state and increases channel carriers through the optical field, improves the dynamic current capacity of the device, adjusts and controls the dynamic current of the device by matching with the electric field, and finally realizes the effective breakthrough of the output power density of the solid microwave power device.

Inventors

KAI CUIHONG
GUO JINGSHU
Du Baixi
SHAO HAO
FENG ZHAOQING
CAI YUNCONG
LI MENGJIE
LIU WENLIANG
LIU LIANGLIANG
DU XUEKUN
BEN JIANWEI

Assignees

乾元国家实验室

Dates

Publication Date: 20260512
Application Date: 20260302

Claims (9)

1. The photoelectric cooperative regulation and control system of the solid-state microwave power device is characterized by comprising the following components: A gallium nitride high electron mobility transistor chip (104) for generating a microwave signal under modulation of a gate electric field; The ultraviolet light source is used for emitting ultraviolet light to the gallium nitride high-electron-mobility transistor chip (104), wherein photon energy emitted by the ultraviolet light source is smaller than the forbidden band width of the barrier layer of the gallium nitride high-electron-mobility transistor chip (104) and is larger than or equal to the forbidden band width of the channel layer and the buffer layer of the gallium nitride high-electron-mobility transistor chip (104); The control unit is used for synchronously controlling the working time sequence of the ultraviolet light source and the gallium nitride high electron mobility transistor chip (104), and the working pulse width of the ultraviolet light source is larger than that of the gallium nitride high electron mobility transistor chip (104); the electrode structure of the gallium nitride high electron mobility transistor chip (104) comprises an air bridge metal, and the percentage of the shielding area of the air bridge metal to the working area of the gallium nitride high electron mobility transistor chip (104) is 0-60%.
2. The system of claim 1, further comprising an impedance matching network (106), the impedance matching network (106) being connected to input-output electrodes of the gallium nitride high electron mobility transistor chip (104); The impedance matching parameters of the impedance matching network (106) are determined based on the output impedance of the gallium nitride high electron mobility transistor chip (104) under the irradiation of the ultraviolet light source.
3. The system of claim 1, wherein the ultraviolet light source is a laser or a light emitting diode.
4. The system of claim 1, wherein the ultraviolet light source comprises a light source chip (101); the light source chip (101) is attached to the inner side wall of the package tube shell (102) of the gallium nitride high electron mobility transistor chip (104), or, The light source chip (101) is mounted on the inner upper cover of the packaging tube shell (102) of the gallium nitride high electron mobility transistor chip (104), or, The light source chip (101) is mounted on or adjacent to the GaN HEMT chip (104), or, The light source chip (101) is integrated on the chip at a position adjacent to the gallium nitride high-electron-mobility transistor chip (104).
5. The system of claim 1, wherein the ultraviolet light emitted by the ultraviolet light source irradiates the channel region of the gallium nitride high electron mobility transistor chip (104) from at least one direction of a top surface, a side surface, or a bottom surface of the gallium nitride high electron mobility transistor chip (104).
6. The system of claim 1, further comprising a heat sink assembly coupled to the gallium nitride high electron mobility transistor chip (104) and the ultraviolet light source for dissipating heat by at least one of micro-channel cooling, air cooling, or thermoelectric cooling.
7. A method for photoelectric cooperative regulation of a solid-state microwave power device, wherein the method is applied to the photoelectric cooperative regulation system of a solid-state microwave power device according to any one of claims 1 to 6, and the method comprises: Irradiating ultraviolet light to the gallium nitride high-electron-mobility transistor chip (104) by utilizing an ultraviolet light source so as to excite carriers and inhibit a current collapse effect, and synchronously applying a grid modulation voltage to the gallium nitride high-electron-mobility transistor chip (104) so as to generate a microwave signal, wherein the irradiation pulse width of the ultraviolet light is larger than the working pulse width of the grid modulation voltage; The photon energy emitted by the ultraviolet light source is smaller than the forbidden bandwidth of the barrier layer of the gallium nitride high electron mobility transistor chip (104), and is larger than or equal to the forbidden bandwidth of the channel layer and the buffer layer of the gallium nitride high electron mobility transistor chip (104).
8. The method of claim 7, wherein the method further comprises: an impedance matching network (106) of the gallium nitride high electron mobility transistor chip is adjusted based on an output impedance of the gallium nitride high electron mobility transistor chip (104) under irradiation of the ultraviolet light source.
9. The method according to claim 7 or 8, characterized in that the method further comprises: when the ultraviolet light source irradiates ultraviolet light to the gallium nitride high electron mobility transistor chip (104), the ultraviolet light penetrates through a passivation layer of the gallium nitride high electron mobility transistor chip (104) and is absorbed by the channel layer and the buffer layer, wherein the excited photo-generated electrons enter a conductive channel to increase the concentration of two-dimensional electron gas, and meanwhile, the excited photo-generated holes are compounded with charged defects in the gallium nitride high electron mobility transistor chip (104) to inhibit a current collapse effect.

Description

Photoelectric cooperative regulation and control system and method for solid-state microwave power device Technical Field The invention relates to the technical field of microelectronics, in particular to a photoelectric cooperative regulation system and method of a solid-state microwave power device. Background The solid-state microwave device is a core power conversion unit of a microwave system such as wireless communication and deep space exploration, the output power of the solid-state microwave device directly determines the effective acting distance and signal quality of the whole system, and the solid-state microwave device represented by a gallium nitride-based high electron mobility transistor (GaN HEMT) has become a main technical route for realizing high-power density and high-efficiency microwave amplification by virtue of high breakdown field strength, high saturated electron rate and good thermal stability. However, the conventional GaN HEMT device is completely dependent on the regulation and control of the grid electric field on the two-dimensional electron gas channel to generate microwave current, the output power density is limited by the working voltage and the maximum saturation current in theory, and in practical application, the inherent high-density defect states (such as surface states, buffer layer traps and the like) in the GaN material system can capture electrons under high field stress, so that serious current collapse effect is caused, the dynamic maximum output current of the device is obviously lower than a static value, and further improvement of the power density is restricted. In addition, the prior art is only a single electric field regulation and control mode, lacks an effective means for actively inhibiting a defect state and continuously maintaining high carrier concentration in the working process of a device, and is difficult to meet urgent requirements of a microwave system for higher output power in the future. Disclosure of Invention Aiming at the defects existing in the prior art, the invention provides a photoelectric cooperative regulation system and a method for a solid-state microwave power device, and solves the technical problem that the power density is difficult to further improve due to the adoption of a single electric field regulation method for the solid-state microwave device in the prior art. In one aspect, the present invention provides a photoelectric cooperative regulation system of a solid microwave power device, including: the gallium nitride high electron mobility transistor chip is used for generating a microwave signal under the modulation of a grid electric field; the ultraviolet light source is used for emitting ultraviolet light to the gallium nitride high-electron-mobility transistor chip, wherein photon energy emitted by the ultraviolet light source is smaller than the forbidden band width of the barrier layer of the gallium nitride high-electron-mobility transistor chip and is larger than or equal to the forbidden band width of the channel layer and the buffer layer of the gallium nitride high-electron-mobility transistor chip; The control unit is used for synchronously controlling the working time sequence of the ultraviolet light source and the gallium nitride high electron mobility transistor chip, and the working pulse width of the ultraviolet light source is larger than that of the gallium nitride high electron mobility transistor chip. Optionally, the electrode structure of the gallium nitride high electron mobility transistor chip comprises an air bridge metal, and the percentage of the shielding area of the air bridge metal to the working area of the gallium nitride high electron mobility transistor chip is 0% to 60%. Optionally, the ultraviolet light source comprises an impedance matching network, wherein the impedance matching network is connected with the input and output electrodes of the gallium nitride high electron mobility transistor chip, and the impedance matching parameters of the impedance matching network are determined based on the output impedance of the gallium nitride high electron mobility transistor chip under the irradiation of the ultraviolet light source. Optionally, the ultraviolet light source is a laser or a light emitting diode. The ultraviolet light source comprises a light source chip, wherein the light source chip is mounted on the inner side wall of a packaging tube shell of the gallium nitride high-electron-mobility transistor chip, or the light source chip is mounted on an upper cover in the packaging tube shell of the gallium nitride high-electron-mobility transistor chip, or the light source chip is mounted on the gallium nitride high-electron-mobility transistor chip or at an adjacent position, or the light source chip and the light source chip are integrated at the adjacent position of the gallium nitride high-electron-mobility transistor chip. Optionally, the ultraviolet light emitted by