CN-121768786-B - Production control method, equipment and storage medium for high creepage distance resistor

CN121768786BCN 121768786 BCN121768786 BCN 121768786BCN-121768786-B

Abstract

The application discloses a production control method, equipment and a storage medium of a high-creepage-distance resistor, wherein the method comprises the steps of obtaining image modeling of the high-creepage-distance resistor to determine processing parameters and pouring parameters; the method comprises the steps of controlling a cutting device to perform tapping treatment on two ends of an outer tube body of a hollow structure to form internal threads, performing ring groove cutting treatment on the outer side of the outer tube body, assembling a first electrode block and one end of a resistor assembly, connecting the first electrode block with the first end of the outer tube body through threads, controlling a pouring device to pour pouring materials into the outer tube body from the second end of the outer tube body for multiple times according to pouring parameters, connecting the second electrode block with the second end of the outer tube body through threads, connecting the second electrode block with the other end of the resistor assembly to form a high-creepage resistor, obtaining an appearance image of the high-creepage resistor and pouring state feedback information of the pouring materials every time, and adjusting processing parameters and pouring parameters according to the appearance image and the pouring state feedback information. The application can improve the stability of the product quality.

Inventors

ZHANG ZENGWEI
Zhao Xiayao
LIU XINPING
XIE TIANLI
ZHENG YUHAO

Assignees

广东意杰科技有限公司

Dates

Publication Date: 20260508
Application Date: 20260304

Claims (10)

1. A production control method of a high creepage distance resistor, characterized by being applied to a production apparatus of the high creepage distance resistor, the production apparatus including a cutting device and a pouring device, the production control method comprising: acquiring image modeling of a high creepage distance resistor; determining processing parameters and pouring parameters according to image modeling; According to the processing parameters, controlling the cutting device to perform tapping treatment on the first end and the second end of the outer pipe body of the hollow structure to form internal threads, and performing ring groove cutting treatment on the outer side of the outer pipe body; Assembling a first electrode block and one end of a resistor assembly, and screwing the first electrode block with the first end of the outer tube body to mount the resistor assembly into the outer tube body and leading the other end of the resistor assembly out of the second end of the outer tube body through a wire; controlling the pouring device to pour the pouring material from the second end of the outer tube body for multiple times according to the pouring parameters so as to form a pouring layer in the outer tube body; the second electrode block is connected with the second end of the outer tube body in a threaded mode and is connected with a lead led out from the other end of the resistor assembly to form the high creepage distance resistor; And obtaining an appearance image of the high creepage distance resistor and pouring state feedback information of pouring materials injected each time, and adjusting the processing parameters and the pouring parameters according to the appearance image and the pouring state feedback information.
2. The method of claim 1, wherein the resistor assembly comprises a plurality of resistor tubes and conductive tubes, adjacent ones of the resistor tubes being connected by the conductive tubes; determining pouring parameters according to image modeling, including: Determining a set of intersection positions between each of the resistor tubes and the conductive tube and a set of gaps between the resistor tubes, the conductive tube and the inner wall of the outer tube body according to the image modeling; determining casting times and material injection quantity of each time according to the intersection position set and the gap set; and integrating and generating the pouring parameters according to the pouring times, the material injection quantity, the initial material temperature, the injection pressure, the injection flow rate and the inner cavity temperature.
3. The production control method of the high creepage resistor according to claim 2, wherein acquiring the potting state feedback information of each injection of the potting material and adjusting the potting parameters according to the potting state feedback information includes: after filling the potting material each time, obtaining the current liquid level in the outer tube body; According to the current liquid level and the intersection position set, and based on a preset parameter constraint rule, adjusting the material temperature, the injection pressure, the injection flow rate and the inner cavity temperature; and adjusting the pouring parameters according to the new material temperature, the new injection pressure, the new injection flow rate and the new inner cavity temperature.
4. The method of claim 3, wherein adjusting the material temperature, the injection pressure, the injection flow rate, and the lumen temperature based on the set of current levels and the intersection locations and based on a preset parameter constraint rule comprises: determining the current theoretical intersection position according to the intersection position set; If the current liquid level is less than the theoretical intersection location, performing at least one of increasing the material temperature, increasing the injection pressure, increasing the injection flow rate, and increasing the lumen temperature; If the current liquid level is greater than the theoretical intersection location, at least one of reducing the material temperature, reducing the injection pressure, reducing the injection flow rate, and reducing the lumen temperature is performed.
5. The method of claim 3, wherein adjusting the material temperature, the injection pressure, the injection flow rate, and the lumen temperature based on the set of current levels and the intersection locations and based on a preset parameter constraint rule comprises: determining a material constraint range, a pressure constraint range, a flow rate constraint range and an inner cavity constraint range according to the parameter constraint rule; According to the current material temperature, the injection pressure, the injection flow rate and the inner cavity temperature, and based on the material constraint range, the pressure constraint range, the flow rate constraint range and the inner cavity constraint range, an up-regulation priority and a down-regulation priority which are in one-to-one correspondence are obtained; and adjusting the material temperature, the injection pressure, the injection flow rate, and the lumen temperature based on the parameter constraint rule, and the up-regulation priority or the down-regulation priority according to the current liquid level and the intersection position set.
6. The method of claim 5, wherein the deriving the one-to-one up-regulation priority and the one-to-down-regulation priority based on the current material temperature, the injection pressure, the injection flow rate, and the lumen temperature and based on the material constraint range, the pressure constraint range, the flow rate constraint range, and the lumen constraint range comprises: Calculating the deviation degree between the maximum values of the current material temperature and the material constraint range and the median value respectively, the deviation degree between the maximum values of the current injection pressure and the pressure constraint range and the median value respectively, the deviation degree between the maximum values of the current injection flow rate and the flow rate constraint range and the median value respectively, the deviation degree between the maximum values of the current inner cavity temperature and the inner cavity constraint range and the median value respectively, and calculating to obtain the material upper limit deviation degree, the pressure upper limit deviation degree, the flow rate upper limit deviation degree and the inner cavity upper limit deviation degree; Determining the one-to-one corresponding up-regulation priority of the material temperature, the injection pressure, the injection flow rate and the inner cavity temperature according to the material upper limit deviation, the pressure upper limit deviation, the flow rate upper limit deviation and the inner cavity upper limit deviation; Calculating the deviation degree between the minimum values of the current material temperature and the material constraint range and the median value respectively, the deviation degree between the minimum values of the current injection pressure and the pressure constraint range and the median value respectively, the deviation degree between the minimum values of the current injection flow rate and the flow rate constraint range and the median value respectively, the deviation degree between the minimum values of the current inner cavity temperature and the inner cavity constraint range and the median value respectively, and calculating to obtain the material lower limit deviation degree, the pressure lower limit deviation degree, the flow rate lower limit deviation degree and the inner cavity lower limit deviation degree; And determining the down-regulating priority of one-to-one correspondence of the material temperature, the injection pressure, the injection flow rate and the inner cavity temperature according to the material lower limit deviation degree, the pressure lower limit deviation degree, the flow rate lower limit deviation degree and the inner cavity lower limit deviation degree.
7. The method of claim 1, wherein obtaining the feedback information of the potting state of each injection of the potting material and adjusting the potting parameters according to the feedback information of the potting state comprises: Acquiring the surface flatness of a potting layer after the last injection of a packaging material and the assembly coaxiality between the outer tube body and the resistor assembly; and adjusting the position of the pouring device for pouring the potting material according to the surface flatness and the assembly coaxiality of the potting layer.
8. The method of claim 1, wherein obtaining an appearance image of the high creepage resistor and adjusting the processing parameters based on the appearance image comprises: Collecting appearance images of the high creepage distance resistor after encapsulation and assembly are completed; Determining the actual depth of each annular groove and the actual distance between each adjacent annular groove according to the appearance image; determining a desired depth and a desired distance of the loop groove in the high creepage distance resistor according to the image modeling; generating a cutting depth correction coefficient according to the average value of the actual depths and the expected depth; generating a cutting offset gradient according to a plurality of continuous actual distances and the expected distances, and generating a cutting offset correction coefficient according to the cutting offset gradient; and adjusting the processing parameters according to the cutting depth correction coefficient and the cutting offset correction coefficient.
9. A production facility for a high creepage resistor, comprising: At least one memory; at least one processor; At least one program; The program is stored in the memory, and the processor executes at least one of the programs to implement the production control method of the high creepage resistor according to any one of claims 1 to 8.
10. A computer-readable storage medium, characterized in that the computer-readable storage medium stores a computer-executable program for executing the production control method of the high creepage resistor according to any one of claims 1 to 8.

Description

Production control method, equipment and storage medium for high creepage distance resistor Technical Field The application relates to the technical field of resistors, in particular to a production control method and equipment for a high creepage distance resistor and a storage medium. Background The high creepage distance resistor is used as a key element in electrical equipment, the creepage distance performance and the structural stability of the high creepage distance resistor directly influence the operation safety and the reliability of the equipment, and the high creepage distance resistor is widely applied to various circuit scenes with high insulation requirements. The production process of such resistors usually involves a plurality of core processes such as outer tube processing, assembly, encapsulation molding and the like, and the matching degree of the process parameters of each process plays a decisive role in the quality of the final product. In the prior art, the production of the resistor with high creepage distance mostly adopts immobilized technological parameters for processing and filling and sealing, and lacks of dynamic adaptation and adjustment of the actual state in the production process. Because the conditions such as outer tube machining precision fluctuation, potting material flowing state change probably exist in the production process, fixed parameter is difficult to adapt to these real-time changes, leads to outer tube machining precision to reach standard, potting layer shaping effect subalternation problem easily, and then influences the creepage distance uniformity and the structural fastness of resistor, can't ensure product quality's stability. Disclosure of Invention The present application aims to solve at least one of the technical problems existing in the prior art. Therefore, the application provides a production control method and equipment for a high creepage distance resistor and a storage medium, which can improve the stability of product quality. In a first aspect, the present application provides a production control method of a high creepage distance resistor, applied to a production apparatus of the high creepage distance resistor, the production apparatus including a cutting device and a pouring device, the production control method including: acquiring image modeling of a high creepage distance resistor; determining processing parameters and pouring parameters according to image modeling; According to the processing parameters, controlling the cutting device to perform tapping treatment on the first end and the second end of the outer pipe body of the hollow structure to form internal threads, and performing ring groove cutting treatment on the outer side of the outer pipe body; Assembling a first electrode block and one end of a resistor assembly, and screwing the first electrode block with the first end of the outer tube body to mount the resistor assembly into the outer tube body and leading the other end of the resistor assembly out of the second end of the outer tube body through a wire; controlling the pouring device to pour the pouring material from the second end of the outer tube body for multiple times according to the pouring parameters so as to form a pouring layer in the outer tube body; the second electrode block is connected with the second end of the outer tube body in a threaded mode and is connected with a lead led out from the other end of the resistor assembly to form the high creepage distance resistor; And obtaining an appearance image of the high creepage distance resistor and pouring state feedback information of pouring materials injected each time, and adjusting the processing parameters and the pouring parameters according to the appearance image and the pouring state feedback information. The production control method of the high-creepage resistor at least has the advantages that firstly, image modeling of the high-creepage resistor is obtained, processing parameters and pouring parameters are determined according to the image modeling, then a cutting device is controlled to conduct tapping processing on the first end and the second end of the outer tube body to form internal threads, annular groove cutting processing is conducted on the outer side of the outer tube body, then a resistor assembly assembled with the first electrode block is installed into the outer tube body through threaded connection, pouring materials are injected into the second end of the outer tube body for many times through the pouring device to form a pouring layer, finally, the second electrode block is connected with the second end of the outer tube body through threads and connected with a conducting wire, meanwhile, appearance images of the high-creepage resistor and pouring state feedback information of the pouring materials are obtained, and the processing parameters and the pouring parameters are dynamically adjusted. According to the method, in