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CN-121806303-B - Semiconductor laser device and facula energy distribution setting method

CN121806303BCN 121806303 BCN121806303 BCN 121806303BCN-121806303-B

Abstract

The application discloses a semiconductor laser device and a facula energy distribution setting method, wherein the semiconductor laser device comprises a laser, a first micro lens array, a regulating lens, an imaging lens and an imaging piece, the imaging piece is provided with a first imaging area and a second imaging area, the first micro lens array, the regulating lens, the imaging lens and the imaging piece are sequentially arranged at intervals, the regulating lens is provided with a first dimming surface facing the first micro lens array and a second dimming surface facing the imaging lens, the second dimming surface is provided with a micro lens transmission area and a planar transmission area which are sequentially arranged, the micro lens transmission area is provided with a dimming micro lens array, a part of light beams pass through the dimming micro lens array of the micro lens transmission area and are projected on the first imaging area, and the rest of light beams pass through the planar transmission area and are simultaneously projected on the first imaging area and the second imaging area. The semiconductor laser device can adjust the energy of the light spots to be distributed in a gradient manner, so that the semiconductor laser device can meet the actual production requirements.

Inventors

  • CAI WANSHAO
  • ZHAO SEN

Assignees

  • 深圳活力激光技术有限公司

Dates

Publication Date
20260512
Application Date
20260309

Claims (9)

  1. 1. A semiconductor laser device, characterized by comprising: A laser (1) for emitting a light beam in a first linear direction; A first microlens array (2) for dividing and homogenizing the light beam; an adjusting lens (3); An imaging lens (4); And An imaging element (5) having a first imaging region (51) and a second imaging region (52) arranged in sequence along a second linear direction, the second linear direction being perpendicular to the first linear direction; The first micro lens array (2), the adjusting lens (3), the imaging lens (4) and the imaging piece (5) are sequentially arranged at intervals along the first linear direction; The adjusting lens (3) is provided with a first dimming surface (31) facing the first micro lens array (2) and a second dimming surface (32) facing the imaging lens (4), the second dimming surface (32) is provided with micro lens transmission areas (33) and plane transmission areas (34) which are sequentially distributed along a second straight line direction, and the micro lens transmission areas (33) are provided with a dimming micro lens array (35); When the laser emits light beams, a part of the light beams pass through the dimming micro lens array (35) of the micro lens transmission area (33) and are projected on the first imaging area (51), and the rest of the light beams pass through the plane transmission area (34) and are simultaneously projected on the first imaging area (51) and the second imaging area (52); the first micro lens array (2) is provided with a plurality of first curved surfaces (21) protruding along the direction approaching to the adjusting lens (3), and the plurality of first curved surfaces (21) are distributed in an array; the plane transmission area (34) is parallel to the first dimming surface (31), the dimming micro lens array (35) is provided with a plurality of second curved surfaces (36) protruding along the direction close to the imaging lens (4), the second curved surfaces (36) are distributed in an array manner, and each second curved surface (36) is provided with a first half-curved surface (37) and a second half-curved surface (38) which are sequentially distributed along the second straight line direction; a part of light beams sequentially pass through the first cambered surface (37) of the first curved surface (21) and the second curved surface (36) and then are projected on the first imaging area (51).
  2. 2. A semiconductor laser device according to claim 1, characterized in that adjacent two of said first curved surfaces (21) are tangential and adjacent two of said second curved surfaces (36) are tangential.
  3. 3. The semiconductor laser device according to claim 1, characterized in that the first microlens array (2) and/or the adjusting lens (3) are movably mounted to adjust a distance between the first microlens array (2) and the adjusting lens (3) so that a light beam passes through inside the first half-arc surface (37) of the second curved surface (36).
  4. 4. The semiconductor laser device according to claim 3, further comprising a housing (6), a window sheet (7), and an adjusting mechanism (8), wherein the housing (6) has a cavity (61) and a projection port, the cavity (61) communicates with the outside of the housing (6) through the projection port, the window sheet (7) is mounted to the housing (6) and covers the projection port, the first microlens array (2), the adjusting lens (3), and the imaging lens (4) are sequentially disposed in the cavity (61), and the window sheet (7) is located between the imaging lens (4) and the imaging member (5); The adjusting mechanism (8) is installed in the cavity (61), and the output end of the adjusting mechanism (8) is connected with the adjusting lens (3) so as to adjust the distance between the first micro lens array (2) and the adjusting lens (3) and the height of the adjusting lens (3) along the second linear direction.
  5. 5. The semiconductor laser device according to claim 4, characterized in that the housing (6) is provided with a water nozzle (9) and an electrode (10), the electrode (10) being electrically connected to the laser (1).
  6. 6. The semiconductor laser device according to any of claims 1 to 4, further comprising a collimator mounted at an output of the laser (1).
  7. 7. The semiconductor laser device according to any one of claims 1 to 4, wherein the imaging lens (4) has a light entrance surface (41) facing the adjusting lens (3) and a light exit surface (42) facing the imaging member (5), the light entrance surface (41) being a plane, the light exit surface (42) being an arc surface protruding in a direction approaching the imaging member (5).
  8. 8. The semiconductor laser device according to any one of claims 1 to 4, characterized in that the ratio of the area of the microlens transmission region (33) to the area of the planar transmission region (34) is Q, the Q being proportional to the spot energy of the first imaging region (51), the Q being inversely proportional to the spot energy of the second imaging region (52).
  9. 9. A spot energy distribution setting method based on the semiconductor laser device according to any one of the preceding claims 1 to 8, characterized by comprising the steps of: Sequentially arranging the laser (1), the first micro-lens array (2), the adjusting lens (3), the imaging lens (4) and the imaging piece (5) at intervals along a first linear direction; starting the laser (1) so that light beams emitted by the laser (1) vertically enter the first micro lens array (2) and sequentially pass through the first micro lens array (2), the adjusting lens (3) and the imaging lens (4) to be projected on the imaging piece (5); A portion of the light beam passes through the dimming microlens array (35) of the microlens transmission region (33) and is projected onto the first imaging region (51), and the remaining portion of the light beam passes through the planar transmission region (34) and is projected onto both the first imaging region (51) and the second imaging region (52) so that the energy of the light spot in the first imaging region (51) is greater than the energy of the light spot in the second imaging region (52).

Description

Semiconductor laser device and facula energy distribution setting method Technical Field The present application relates to the field of semiconductor technologies, and in particular, to a semiconductor laser device and a method for setting a light spot energy distribution. Background In the age of rapid development of technology today, the field of semiconductor high-end fabrication is advancing toward micron-scale precision. However, the application bottleneck of the hot air heating and infrared heating technology adopted in the traditional semiconductor production and manufacturing is increasingly prominent due to the limitation of physical characteristics of the technology, and the technology is difficult to meet the increasingly severe technological requirements of the semiconductor production and manufacturing. With the development of semiconductor lasers, a homogenized large-Spot laser technology (Homogenized Large-Spot LASER HEATING) has made a breakthrough progress. The technology brings brand new revolution to industrial heat management logic by means of the innovative concept of 'accurate energy matrix'. The homogenized large-spot laser technology has a plurality of remarkable advantages, can realize accurate control of micron-scale temperature gradient, effectively avoids pollution problem and workpiece deformation phenomenon caused by zero-contact thermal shock, and has flexible and convenient energy density adjustment. Based on the outstanding characteristics, the homogenized large-spot laser technology gradually replaces the traditional hot air heating and infrared heating modes, and becomes a heat treatment technology with great potential in the field of semiconductor manufacturing. However, although the homogenized light spot output by the existing semiconductor laser has higher energy consistency, the semiconductor laser of the type cannot meet the actual production requirement in some occasions needing energy gradient irradiation of the light spot, which limits the further popularization and application of the semiconductor laser technology to a certain extent. Disclosure of Invention An object of an embodiment of the present invention is to provide a semiconductor laser device and a spot energy distribution setting method, which can solve the above-mentioned problems existing in the prior art. In order to achieve the above purpose, the application adopts the following technical scheme: in one aspect, there is provided a semiconductor laser apparatus including: a laser that emits a light beam in a first linear direction; A first microlens array for dividing and homogenizing the light beam; Adjusting the lens; An imaging lens; And The imaging piece is provided with a first imaging area and a second imaging area which are sequentially arranged along a second linear direction, and the second linear direction is perpendicular to the first linear direction; the first micro lens array, the adjusting lens, the imaging lens and the imaging piece are sequentially arranged at intervals along the first linear direction; the adjusting lens is provided with a first dimming surface facing the first micro-lens array and a second dimming surface facing the imaging lens, wherein the second dimming surface is provided with a micro-lens transmission area and a plane transmission area which are sequentially distributed along a second straight line direction, and the micro-lens transmission area is provided with a dimming micro-lens array; when the laser emits light beams, a part of the light beams pass through the dimming micro lens array of the micro lens transmission area and are projected on the first imaging area, and the rest of the light beams pass through the plane transmission area and are simultaneously projected on the first imaging area and the second imaging area. Preferably, the first microlens array has a plurality of first curved surfaces protruding along a direction approaching the adjusting lens, and the plurality of first curved surfaces are distributed; The plane transmission area is parallel to the first dimming surface, the dimming micro lens array is provided with a plurality of second curved surfaces protruding along the direction close to the imaging lens, the second curved surface arrays are distributed, and each second curved surface is provided with a first half-cambered surface and a second half-cambered surface which are sequentially distributed along the second linear direction; and a part of light beams sequentially pass through the first cambered surfaces of the first curved surface and the second curved surface and then are projected to the first imaging area. Preferably, two adjacent first curved surfaces are tangent, and two adjacent second curved surfaces are tangent. Preferably, the first microlens array and/or the adjusting lens are/is movably mounted to adjust a distance between the first microlens array and the adjusting lens so that a light beam passes through the fir