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CN-121843260-B - Gallium nitride/molybdenum disulfide heterojunction photoelectric detector and preparation method thereof

CN121843260BCN 121843260 BCN121843260 BCN 121843260BCN-121843260-B

Abstract

The application discloses a gallium nitride/molybdenum disulfide heterojunction photoelectric detector and a preparation method thereof, belonging to the field of photoelectric detectors, wherein the photoelectric detector comprises a gallium nitride layer with a first conductivity type; the device comprises a gallium nitride layer, a passivation layer, a molybdenum disulfide film, a first electrode and a second electrode, wherein the passivation layer covers the surface of the gallium nitride layer and is provided with an opening area exposing the gallium nitride layer, the molybdenum disulfide film is transferred to the surface of the passivation layer and is at least partially in direct contact with the gallium nitride layer through the opening area to form a heterojunction, and the first electrode and the second electrode are respectively and electrically connected with the gallium nitride layer and the molybdenum disulfide film. Meanwhile, the molybdenum disulfide film is directly transferred to the surface of the passivation layer and is directly contacted with the gallium nitride layer through the open pore area, chemical bond connection does not exist between the molybdenum disulfide film and the gallium nitride layer, and the molybdenum disulfide film and the gallium nitride layer are combined through Van der Waals force, so that the problem of lattice mismatch between the molybdenum disulfide film and the gallium nitride layer can be effectively solved, and the performance of the device is improved.

Inventors

  • QIU HAIBING
  • LI FENGCHAO
  • LIANG TING
  • YU JIANGANG
  • LEI CHENG
  • WEI XI

Assignees

  • 中北大学

Dates

Publication Date
20260512
Application Date
20260313

Claims (9)

  1. 1. A gallium nitride/molybdenum disulfide heterojunction photodetector, comprising: a gallium nitride layer having a first conductivity type; A passivation layer covering the surface of the gallium nitride layer, wherein the passivation layer is provided with an opening area exposing the gallium nitride layer; the molybdenum disulfide film is transferred to the surface of the passivation layer, and at least part of the molybdenum disulfide film is in direct contact with the gallium nitride layer through the open pore area to form a heterojunction; the first electrode and the second electrode are respectively and electrically connected with the gallium nitride layer and the molybdenum disulfide film; the molybdenum disulfide film comprises a first part and a second part, wherein the first part is located in the open hole area, and the second part is arranged outside the first part in a surrounding mode and is in direct contact with the passivation layer.
  2. 2. The gallium nitride/molybdenum disulfide heterojunction photodetector of claim 1, wherein at least a portion of the molybdenum disulfide film is in direct contact with the passivation layer to support the molybdenum disulfide film.
  3. 3. The gallium nitride/molybdenum disulfide heterojunction photodetector of claim 1, wherein the second electrode comprises an annular portion and a body portion connected to the annular portion, the annular portion being enclosed outside the open area and in direct contact with the molybdenum disulfide film.
  4. 4. The gallium nitride/molybdenum disulfide heterojunction photoelectric detector of claim 1, wherein the passivation layer is a silicon dioxide layer or an aluminum oxide layer, and the thickness of the passivation layer is 10-30 nm.
  5. 5. The gallium nitride/molybdenum disulfide heterojunction photodetector of claim 1, wherein the first conductivity type is n-type.
  6. 6. A method of fabricating a gallium nitride/molybdenum disulfide heterojunction photodetector as defined in any one of claims 1 to 5, comprising: Providing a substrate, wherein the surface of the substrate is grown with the gallium nitride layer with the first conductivity type; depositing the passivation layer on the surface of the gallium nitride layer; Forming an opening on the passivation layer by using a photolithography process to form the opening region; Transferring the molybdenum disulfide film to the open pore area through a wet transfer process so that at least part of the molybdenum disulfide film is in direct contact with the gallium nitride layer; the first electrode and the second electrode are prepared.
  7. 7. The method according to claim 6, wherein in the step of depositing the passivation layer on the surface of the gallium nitride layer, the deposition is specifically atomic layer deposition, chemical vapor deposition or physical vapor deposition.
  8. 8. The method of claim 6, wherein the step of forming the opening in the passivation layer using a photolithography process comprises: coating photoresist on the passivation layer; defining the open area on the photoresist through a mask; and etching the passivation layer by taking the photoresist as a mask so as to form the opening area by opening the opening on the passivation layer.
  9. 9. The method of manufacturing according to claim 6, wherein the step of manufacturing the first electrode and the second electrode includes: coating photoresist on the molybdenum disulfide film and the gallium nitride layer; defining regions of the first electrode and the second electrode on the photoresist through a mask; And evaporating and depositing metal by taking the photoresist as a mask, and then stripping the photoresist to prepare the first electrode and the second electrode.

Description

Gallium nitride/molybdenum disulfide heterojunction photoelectric detector and preparation method thereof Technical Field The application belongs to the technical field of photoelectric detectors, and particularly relates to a gallium nitride/molybdenum disulfide heterojunction photoelectric detector and a preparation method thereof. Background The traditional ultraviolet photoelectric detector is mainly prepared based on a wide band gap semiconductor material, and needs to be prepared through high-cost epitaxial growth, the preparation process is complex, the cost is high, the two-dimensional material has excellent photoelectric performance, but the problems of low absorptivity, low response speed and the like in ultraviolet detection exist, and the application in the photoelectric detector is limited. In theory, the heterojunction formed by combining the three-dimensional material and the two-dimensional material can effectively improve the performance of the device, but the interface defects are increased due to the lattice mismatch problem between the three-dimensional material and the two-dimensional material, and the performance of the device is influenced. Disclosure of Invention The application aims to provide a gallium nitride/molybdenum disulfide heterojunction photoelectric detector and a preparation method thereof, which are used for effectively avoiding the problem of lattice mismatch while carrying out heterogeneous integration on a three-dimensional material and a two-dimensional material, and remarkably improving the performance of a device without using an epitaxial growth technology, and have lower cost. To achieve the above object, a first aspect of the present application provides a gallium nitride/molybdenum disulfide heterojunction photodetector, comprising: a gallium nitride layer having a first conductivity type; A passivation layer covering the surface of the gallium nitride layer, wherein the passivation layer is provided with an opening area exposing the gallium nitride layer; the molybdenum disulfide film is transferred to the surface of the passivation layer, and at least part of the molybdenum disulfide film is in direct contact with the gallium nitride layer through the open pore area to form a heterojunction; And the first electrode and the second electrode are respectively and electrically connected with the gallium nitride layer and the molybdenum disulfide film. In one or more embodiments, at least a portion of the molybdenum disulfide film is in direct contact with the passivation layer to support the molybdenum disulfide film. In one or more embodiments, the molybdenum disulfide film includes a first portion located in the open area, and a second portion surrounding the first portion and in direct contact with the passivation layer. In one or more embodiments, the second electrode includes an annular portion and a body portion connected to the annular portion, the annular portion being enclosed outside the open area and in direct contact with the molybdenum disulfide film. In one or more embodiments, the passivation layer is a silicon dioxide layer or an aluminum oxide layer. In one or more embodiments, the passivation layer has a thickness of 10-30 nm. In one or more embodiments, the first conductivity type is n-type. In order to achieve the above object, a second aspect of the present application provides a method for preparing a gallium nitride/molybdenum disulfide heterojunction photoelectric detector according to any one of the above embodiments, including: Providing a substrate, wherein the surface of the substrate is grown with the gallium nitride layer with the first conductivity type; depositing the passivation layer on the surface of the gallium nitride layer; Forming an opening on the passivation layer by using a photolithography process to form the opening region; Transferring the molybdenum disulfide film to the open pore area through a wet transfer process so that at least part of the molybdenum disulfide film is in direct contact with the gallium nitride layer; the first electrode and the second electrode are prepared. In one or more embodiments, in the step of depositing the passivation layer on the surface of the gallium nitride layer, the deposition is specifically atomic layer deposition, chemical vapor deposition or physical vapor deposition. In one or more embodiments, the step of forming an opening in the passivation layer using a photolithography process includes: coating photoresist on the passivation layer; defining the open area on the photoresist through a mask; and etching the passivation layer by taking the photoresist as a mask so as to form the opening area by opening the opening on the passivation layer. In one or more embodiments, the step of preparing the first electrode and the second electrode includes: coating photoresist on the molybdenum disulfide film and the gallium nitride layer; defining regions of the first electrode and the se