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CN-121972659-A - Method and device for casting metallized ceramic matrix and metallized ceramic matrix

CN121972659ACN 121972659 ACN121972659 ACN 121972659ACN-121972659-A

Abstract

The invention provides a method and a device for casting a metallized ceramic matrix and the metallized ceramic matrix, and relates to the field of electronic ceramic surface metallization; the method comprises the steps of pre-perforating ceramic matrixes, carrying out surface treatment, fixing a plurality of ceramic matrixes in a mold cavity, pressing liquid metal into the mold cavity provided with the ceramic matrixes by pressure, cooling the mold cavity and the internal contents to room temperature under the protection of inert gas, and finally removing the mold to obtain the needed multilayer interconnected metallized ceramic matrixes. Compared with the prior art, the method has simple and convenient process, utilizes the casting technology to integrally cast the multilayer ceramic matrix and the metal layer, realizes the interconnection of any layers of the multilayer ceramic matrix and the various ceramic matrixes by pressing in the liquid metal, and prepares the metallized ceramic matrix with any three-dimensional interconnection three-dimensional structure by the liquid metal.

Inventors

  • MEI ZEQUN

Assignees

  • 桑尼维尔新材料科技(南京)有限公司

Dates

Publication Date
20260505
Application Date
20251223

Claims (10)

  1. 1. A method of casting a metallized ceramic substrate comprising the steps of: A target ceramic matrix is configured in a first die cavity of a die, the target ceramic matrix comprises a plurality of ceramic matrixes which are arranged at intervals, and through holes are preset on the surface of the ceramic matrixes and subjected to surface modification; pressing high-temperature liquid metal in a second die cavity of the die into a preset position of a first die cavity along a target runner under the protection of inert gas, and then maintaining pressure; after the pressure maintaining is finished, blocking the liquid metal in the target runner, cooling the first die cavity to room temperature, and combining the liquid metal in the first die cavity with the target ceramic matrix; and (5) carrying out post-treatment on the product after demolding to obtain the multilayer interconnection metallized ceramic matrix.
  2. 2. The method of casting a metallized ceramic substrate according to claim 1, wherein the target ceramic substrate disposed in the first mold cavity is one or more ceramic substrates selected from the group consisting of Al 2 O 3 、HP-Al 2 O 3 、ZTA、AlN、Si 3 N 4 、SiO 2 , glass, graphite, sapphire and pyrolytic graphite; the shape of the ceramic matrix is selected from ceramic base plates, ceramic columns, ceramic balls, ceramic blocks and ceramic tube shells.
  3. 3. The method of casting a metallized ceramic substrate according to claim 1, wherein the surface of the ceramic substrate is modified to form a transition layer having a thickness of not more than 10 μm on the surface of the ceramic substrate, the transition layer being for improving the wettability of the ceramic substrate by the liquid metal; The formation process of the transition layer is one or more selected from a rotary film forming process, a physical vapor deposition process, a chemical vapor deposition process, a screen printing process, an electroplating process and a chemical plating process.
  4. 4. A method of casting a metallized ceramic substrate according to claim 3, wherein the material of said transition layer is selected from one or more of Cu, si, zn, ti, ag, sn, al composites.
  5. 5. A method of casting a metallized ceramic substrate according to claim 3, wherein the rotating film forming process forms a transition layer by: Dropping an organic solvent containing uniformly dispersed metal oxide powder on the surface of a rotating ceramic matrix to uniformly distribute the organic solvent on the surface of the ceramic matrix by centrifugal force; Calcining the ceramic matrix to enable the metal oxide powder and the ceramic matrix to fully generate chemical reaction, and reducing the metal oxide on the surface of the ceramic matrix into metal simple substance by adopting a reduction process after cooling, thereby covering a uniform transition layer on the surface of the ceramic matrix.
  6. 6. An apparatus for casting a metallized ceramic substrate, comprising a mold, a heating mechanism, a pressure mechanism, a gas mechanism, and a power supply mechanism for supplying power to the apparatus; the die comprises a first die cavity, a second die cavity and a target runner which is controllably communicated with the first die cavity and the second die cavity, wherein a plurality of first mounting grooves are formed in the first die cavity at intervals and are used for mounting a ceramic matrix; The heating mechanism is used for heating the solid metal to be melted into liquid metal or keeping the liquid metal to be liquid, the pressure mechanism is communicated with the first die cavity and used for compressing the volume of the second die cavity so that the liquid metal in the second die cavity enters the first die cavity along a target runner, and the gas mechanism is used for providing inert gas protection atmosphere in the die casting process.
  7. 7. The apparatus for casting a metallized ceramic substrate according to claim 6, wherein said mold comprises a movable mold and a fixed mold, wherein a second cavity is formed in the middle of said fixed mold, a mounting position is provided in the middle of said second cavity, said pressing means comprises a pressing block disposed on the top of said second cavity to form a sealing end cap movable on the top of said second cavity, said movable mold is detachably disposed in said mounting position, the middle thereof forms a first cavity, the bottom surface of said first cavity is not in contact with the bottom surface of said second cavity, and said target runner is disposed on the bottom surface of said first cavity.
  8. 8. The apparatus for casting a metallized ceramic substrate according to claim 7, wherein a slider module is provided at the bottom of said movable mold, said slider module being embedded in a second mounting groove provided at the bottom of the inner wall of said movable mold; The sliding block module comprises an upper sliding block and a lower sliding block, wherein the two upper sliding blocks and the lower sliding block are parallel in surface-to-surface joint, a plurality of first through holes are formed in the surface of the upper sliding block, a plurality of second through holes are formed in the surface of the lower sliding block, the upper sliding block and the lower sliding block in the sliding block module at least have first relative positions and second relative positions, the first relative positions are corresponding to the positions of the first through holes and the second through holes one by one, and the second relative positions are corresponding to the positions of the first through holes and the second through holes in a staggered manner to block the target flow passages.
  9. 9. The apparatus for casting a metallized ceramic substrate according to claim 7, further comprising a plurality of filter mechanisms, each of said filter mechanisms being provided with a plurality of filter holes, respectively; The filtering mechanisms are arranged on a liquid flow channel of the liquid metal in the second die cavity, which enters the first die cavity, at intervals, and the pore diameter of the filtering holes on each filtering mechanism is gradually reduced along the flow direction of the liquid flow pressed into the first die cavity.
  10. 10. Metallized ceramic substrate, characterized in that it is obtained by the method for casting metallized ceramic substrates according to any one of claims 1 to 5 or by the apparatus for casting metallized ceramic substrates according to any one of claims 6 to 9.

Description

Method and device for casting metallized ceramic matrix and metallized ceramic matrix Technical Field The invention belongs to the technical field of electronic ceramic surface metallization, and particularly relates to a method and a device for casting a metallized ceramic matrix and the metallized ceramic matrix. Background In recent years, with the rapid progress of semiconductor technology toward high performance, high power, miniaturization, and high reliability, advanced electronic packaging technology has become a key to improving overall performance of the system. In high-end application fields such as flip chip ball grid array (FC-BGA), high density interconnection ceramic substrate (C-HDI), three-dimensional flip chip (3D-FC) interconnection substrate for high power LED and Insulated Gate Bipolar Transistor (IGBT), extremely high requirements are put on heat dissipation, electrical property, mechanical strength and structural integration level of a packaging substrate. Currently, the industry generally adopts a substrate technology using ceramic as a core material, and mainly comprises high-temperature co-fired ceramic (HTCC), direct copper plating (DPC), direct Bonding Copper (DBC), active Metal Brazing (AMB), direct Bonding Aluminum (DBA) and the like. The HTCC technology is characterized in that ceramic powder, sintering aid, organic binder and the like are uniformly mixed and cast into a green ceramic tape through a casting machine, the green ceramic tape is subjected to procedures of punching, printing high-temperature metal slurry, pore filling, lamination and the like, and then is subjected to one-time cofiring forming at a high temperature exceeding 1500 ℃, and the technology has the advantages that the structural strength of the ceramic of the sintering product is high, but the process temperature is high, selectable metal conductors are limited, and high-precision fine wire is difficult to realize. The DPC technology is characterized in that a metal seed layer is formed on the surface of a ceramic substrate by sputtering, then the seed layer is thickened through an electroplating or chemical plating process and a circuit pattern is formed, and the upper and lower interconnection is realized. In addition, the DPC technology has lower coverage uniformity and qualification rate when manufacturing a three-dimensional step structure, and influences the reliability of the product. The DBC technology is that copper foil is oxidized at high temperature, directly bonded with the surface of the treated ceramic, and then etched to form a circuit. The method has the characteristics of excellent heat conductivity, but the DBC technology cannot form a three-dimensional structure with steps, cavities and the like, has poor design flexibility, and has the advantages of uneven bonding force of copper layers on two sides of the prepared ceramic, difficulty in integrating functions such as interconnection and pins among multiple layers of ceramics, poor reliability and low integration efficiency, and further, the DBC technology has the defects of numerous process flows, more defects in the production process, higher product percent of pass, higher difficulty in improvement and higher environmental protection cost. The AMB technology uses brazing filler metal (slurry) containing active metal elements, realizes the welding of copper foil and ceramic in a vacuum environment, and then forms a circuit by etching, improves the bonding strength and reliability of the ceramic and a metal layer on the basis of the DBC technology, but the AMB technology cannot form a three-dimensional structure and has poor functional integration, in addition, the AMB technology has complex process and high control difficulty, the used active brazing filler metal has extremely high cost, special equipment is needed, the integral cost is high, and the environmental protection pressure is faced. The principle of the DBA technology is similar to that of the AMB technology, but aluminum foil is used as a metal layer, so that good heat conduction and electric conduction and a more matched thermal expansion coefficient are considered, a three-dimensional structure cannot be formed similar to that of the AMB technology, and the DBA technology has poor function integration. In summary, the current state of the mainstream ceramic substrate packaging technology faces the serious challenges of cost, process complexity, environmental protection pressure, three-dimensional integration capability, functional integration level and the like, particularly DBC, AMB, DBA and other technologies cannot realize an effective three-dimensional interconnection structure, so that the further improvement of packaging density and performance is limited, and the DPC technology with certain three-dimensional processing capability has the problems of poor step coverage rate, low qualification rate and high cost. Therefore, the industry is urgent to develop a new